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1. 发明授权

US08497186B2 Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device 有权
公开(公告)号：US08497186B2
公开(公告)日：2013-07-30
申请号：US13113638
申请日：2011-05-23
申请人： Swarnal Borthakur , Marc Sulfridge
发明人： Swarnal Borthakur , Marc Sulfridge
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L24/05 , H01L24/10 , H01L24/13 , H01L27/14618 , H01L27/14683 , H01L27/1469 , H01L31/02164 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13 , H01L2224/13021 , H01L2224/131 , H01L2924/01029 , H01L2924/12042 , H01L2924/14 , H01L2924/014 , H01L2924/00
摘要： Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.

2. 发明申请

US20120194669A1 FLUID SAMPLE ANALYSIS SYSTEMS 有权
标题翻译：流体样品分析系统
公开(公告)号：US20120194669A1
公开(公告)日：2012-08-02
申请号：US13105232
申请日：2011-05-11
申请人： Kevin W. Hutto , Swarnal Borthakur
发明人： Kevin W. Hutto , Swarnal Borthakur
IPC分类号： H04N7/18 , B32B38/08 , B32B37/22 , B32B38/10
CPC分类号： G01N21/6458 , G01N15/1484 , G01N21/05 , G01N21/6454 , G01N2015/144 , G01N2021/0346 , G01N2021/6478
摘要： A fluid sample analyzing system may be formed from an image sensor integrated circuit substrate. A glass wafer may be used to cover a wafer of image sensors. The glass wafer and the image sensor wafer may be attached using oxide bonding. Fluid channels may be formed in a layer that is interposed between the image sensor wafer and the glass wafer. The layer may be deposited on the image sensor wafer and the glass wafer prior to oxide bonding. A spacer may be used to deliver the fluid channel layer to the image sensor wafer before the glass wafer is bonded to the image sensor wafer. The spacer may be formed from a silicon wafer. The silicon wafer may be bonded to the image sensor wafer and thinned, leaving a thin spacer wafer layer on the image sensor wafer in which fluid channels may be formed.
摘要翻译：流体样品分析系统可以由图像传感器集成电路基板形成。可以使用玻璃晶片来覆盖图像传感器的晶片。可以使用氧化物结合来附接玻璃晶片和图像传感器晶片。流体通道可以形成在介于图像传感器晶片和玻璃晶片之间的层中。该层可以在氧化物粘合之前沉积在图像传感器晶片和玻璃晶片上。在将玻璃晶片接合到图像传感器晶片之前，可以使用间隔物将流体通道层传送到图像传感器晶片。间隔物可以由硅晶片形成。硅晶片可以结合到图像传感器晶片并变薄，在可以形成流体通道的图像传感器晶片上留下薄的间隔晶片层。

3. 发明授权

US08211787B2 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US08211787B2
公开(公告)日：2012-07-03
申请号：US12959678
申请日：2010-12-03
申请人： Swarnal Borthakur , Richard L. Stocks
发明人： Swarnal Borthakur , Richard L. Stocks
IPC分类号： H01L21/768
CPC分类号： H01L27/14683 , H01L27/14618 , H01L27/14625 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming semiconductor constructions in which a semiconductor material sidewall is along an opening, a protective organic material is over at least one semiconductor material surface, and the semiconductor material sidewall and protective organic material are both exposed to an etch utilizing at least one fluorine-containing composition. The etch is selective for the semiconductor material relative to the organic material, and reduces sharpness of at least one projection along the semiconductor material sidewall. In some embodiments, the opening is a through wafer opening, and subsequent processing forms one or more materials within such through wafer opening to form a through wafer interconnect. In some embodiments, the opening extends to a sensor array, and the protective organic material is comprised by a microlens system over the sensor array. Subsequent processing may form a macrolens structure across the opening.
摘要翻译：一些实施例包括形成半导体结构的方法，其中半导体材料侧壁沿着开口，保护性有机材料在至少一个半导体材料表面上，并且半导体材料侧壁和保护性有机材料都暴露于至少利用蚀刻一种含氟组合物。蚀刻对于半导体材料相对于有机材料是选择性的，并且降低沿着半导体材料侧壁的至少一个突起的锐度。在一些实施例中，开口是贯穿晶片开口，随后的处理在该贯穿晶片开口内形成一个或多个材料以形成贯穿晶片互连。在一些实施例中，开口延伸到传感器阵列，并且保护性有机材料由传感器阵列上的微透镜系统包括。随后的处理可以在整个开口处形成一个宏观结构。

4. 发明申请

US20110230007A1 SEMICONDUCTOR FABRICATION METHOD AND SYSTEM 有权
标题翻译：半导体制造方法与系统
公开(公告)号：US20110230007A1
公开(公告)日：2011-09-22
申请号：US13151478
申请日：2011-06-02
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L31/18 , H01L21/283
CPC分类号： H01L27/14683 , H01L23/10 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L24/13 , H01L24/94 , H01L27/14618 , H01L2224/0401 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05181 , H01L2224/05571 , H01L2224/05644 , H01L2224/13022 , H01L2924/0002 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/16235 , H01L2924/19042 , H01L2924/00012 , H01L2224/05552 , H01L2924/00014 , H01L2924/01028 , H01L2924/013
摘要： A method for manufacturing a semiconductor device is disclosed. In one embodiment, the method includes attaching a carrier to a substrate including a via to form a pressurized sealed cavity between the carrier and the substrate. The method may also include thinning the substrate attached to the carrier and forming a redistribution layer on the thinned substrate in electrical communication with the via, the redistribution layer including a conductive layer formed through atmospheric pressure chemical vapor deposition. Additional methods, devices, and systems are devices, systems, and methods are also disclosed.
摘要翻译：公开了一种制造半导体器件的方法。在一个实施例中，该方法包括将载体附接到包括通孔的基底，以在载体和基底之间形成加压的密封空腔。该方法还可以包括使连接到载体的衬底变薄，并在与通孔电连通的薄化衬底上形成再分布层，再分布层包括通过大气压化学气相沉积形成的导电层。还公开了附加的方法，设备和系统的装置，系统和方法。

5. 发明申请

US20110204462A1 METHOD AND APPARATUS PROVIDING AN IMAGER MODULE WITH A PERMANENT CARRIER 有权
标题翻译：用永久载体提供图像模块的方法和装置
公开(公告)号：US20110204462A1
公开(公告)日：2011-08-25
申请号：US13097085
申请日：2011-04-29
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L29/66 , H01L23/48
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

6. 发明授权

US07767544B2 Semiconductor fabrication method and system 有权
标题翻译：半导体制造方法和系统
公开(公告)号：US07767544B2
公开(公告)日：2010-08-03
申请号：US11786609
申请日：2007-04-12
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L21/30 , H01L21/46 , H01L21/50 , H01L21/48 , H01L21/44
CPC分类号： H01L27/14683 , H01L23/10 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L24/13 , H01L24/94 , H01L27/14618 , H01L2224/0401 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05181 , H01L2224/05571 , H01L2224/05644 , H01L2224/13022 , H01L2924/0002 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/16235 , H01L2924/19042 , H01L2924/00012 , H01L2224/05552 , H01L2924/00014 , H01L2924/01028 , H01L2924/013
摘要： Embodiments of the present invention are generally directed to a method for manufacturing a semiconductor device. In one embodiment, the method includes providing a substrate that includes a via or interconnect. In this embodiment, the method also includes forming a sealed array, in which forming such an array includes attaching a carrier to a first surface of the substrate to form a sealed cavity between the carrier and the substrate. Further, the method of this embodiment also includes forming a redistribution layer on the sealed array over a second surface of the substrate. Devices and systems having a carrier attached to a substrate are also disclosed.
摘要翻译：本发明的实施例一般涉及半导体器件的制造方法。在一个实施例中，该方法包括提供包括通孔或互连的衬底。在该实施例中，该方法还包括形成密封阵列，其中形成这样的阵列包括将载体附接到基板的第一表面以在载体和基板之间形成密封空腔。此外，本实施例的方法还包括在衬底的第二表面上的密封阵列上形成再分布层。还公开了具有附着到基底的载体的装置和系统。

7. 发明授权

US07629249B2 Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods 有权
标题翻译：具有通过化学反应过程形成的导电互连结构的微型工件以及相关的系统和方法
公开(公告)号：US07629249B2
公开(公告)日：2009-12-08
申请号：US11511690
申请日：2006-08-28
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L24/14 , H01L25/0657 , H01L2224/05001 , H01L2224/05009 , H01L2224/05025 , H01L2224/05147 , H01L2224/05155 , H01L2224/05181 , H01L2224/05184 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： Microfeature workpieces having conductive vias formed by chemically reactive processes, and associated systems and methods are disclosed. A method in accordance with one embodiment includes disposing a conductive lining on walls of a via in a microfeature workpiece, so that a space is located between opposing portions of the lining facing toward each other from opposing portions of the wall. The method can further include chemically reacting the lining with a reactive material to form a chemical compound from a constituent of the reactive material and a constituent of the lining. The method can still further include at least partially filling the space with the compound. In particular embodiments, the conductive lining includes copper, the reactive material includes sulfur hexafluoride, and the chemical compound that at least partially fills the space in the via includes copper sulfide.
摘要翻译：公开了具有通过化学反应过程形成的导电通孔的微型工件，以及相关联的系统和方法。根据一个实施例的方法包括在微特征工件中在通孔的壁上布置导电衬里，使得空间位于相对于壁的相对部分彼此面对的相对部分之间。该方法还可以包括使衬里与反应性材料发生化学反应以从反应性材料的组分和衬里的成分形成化学化合物。该方法还可以进一步包括至少部分地填充该化合物的空间。在具体实施方案中，导电衬里包括铜，反应性材料包括六氟化硫，并且至少部分填充通孔中的空间的化合物包括硫化铜。

8. 发明授权

US09324611B2 Corrosion resistant via connections in semiconductor substrates and methods of making same 有权
标题翻译：通过半导体衬底中的连接进行耐腐蚀及其制造方法
公开(公告)号：US09324611B2
公开(公告)日：2016-04-26
申请号：US12062369
申请日：2008-04-03
申请人： Swarnal Borthakur
发明人： Swarnal Borthakur
IPC分类号： H01L21/44 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： Devices and methods for protecting the metal within a via in a semiconductor substrate from corrosion are provided. Specifically, embodiments of the present invention relate to disposing a corrosion resistant metal layer within a recess formed in a semiconductor substrate such that the metal subsequently deposited within the via will adhere to the corrosion resistant metal layer, then backgrinding the bottom surface of the semiconductor substrate to expose the corrosion resistant metal. For example, the metal deposited within the recess may be copper, while the corrosion resistant metal may be a noble metal such as palladium.
摘要翻译：提供了用于保护半导体衬底中的通孔内的金属免受腐蚀的装置和方法。具体地说，本发明的实施方式涉及在形成于半导体基板的凹部内设置耐蚀金属层，使得随后沉积在通路内的金属将粘附在耐腐蚀金属层上，然后背面研磨半导体基板的底面露出耐腐蚀金属。例如，沉积在凹槽内的金属可以是铜，而耐腐蚀金属可以是贵金属如钯。

9. 发明授权

US08617975B2 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US08617975B2
公开(公告)日：2013-12-31
申请号：US13494151
申请日：2012-06-12
申请人： Swarnal Borthakur , Richard L. Stocks
发明人： Swarnal Borthakur , Richard L. Stocks
IPC分类号： H01L21/768
CPC分类号： H01L27/14683 , H01L27/14618 , H01L27/14625 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming semiconductor constructions in which a semiconductor material sidewall is along an opening, a protective organic material is over at least one semiconductor material surface, and the semiconductor material sidewall and protective organic material are both exposed to an etch utilizing at least one fluorine-containing composition. The etch is selective for the semiconductor material relative to the organic material, and reduces sharpness of at least one projection along the semiconductor material sidewall. In some embodiments, the opening is a through wafer opening, and subsequent processing forms one or more materials within such through wafer opening to form a through wafer interconnect. In some embodiments, the opening extends to a sensor array, and the protective organic material is comprised by a microlens system over the sensor array. Subsequent processing may form a macrolens structure across the opening.
摘要翻译：一些实施例包括形成半导体结构的方法，其中半导体材料侧壁沿着开口，保护性有机材料在至少一个半导体材料表面上，并且半导体材料侧壁和保护性有机材料都暴露于至少利用蚀刻一种含氟组合物。蚀刻对于半导体材料相对于有机材料是选择性的，并且降低沿着半导体材料侧壁的至少一个突起的锐度。在一些实施例中，开口是贯穿晶片开口，随后的处理在该贯穿晶片开口内形成一个或多个材料以形成贯穿晶片互连。在一些实施例中，开口延伸到传感器阵列，并且保护性有机材料由传感器阵列上的微透镜系统包括。随后的处理可以在整个开口处形成一个宏观结构。

10. 发明申请

US20120194719A1 IMAGE SENSOR UNITS WITH STACKED IMAGE SENSORS AND IMAGE PROCESSORS 审中-公开
标题翻译：具有堆叠图像传感器和图像处理器的图像传感器单元
公开(公告)号：US20120194719A1
公开(公告)日：2012-08-02
申请号：US13080889
申请日：2011-04-06
申请人： Scott Churchwell , Ulrich Boettiger , Swarnal Borthakur , Andrew Perkins , Rick Lake , Marc Sulfridge
发明人： Scott Churchwell , Ulrich Boettiger , Swarnal Borthakur , Andrew Perkins , Rick Lake , Marc Sulfridge
IPC分类号： H04N5/335
CPC分类号： H01L27/14618 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L2224/12105 , H01L2224/131 , H01L2224/221 , H01L2224/24011 , H01L2224/24105 , H01L2224/24146 , H01L2224/82039 , H01L2224/821 , H01L2924/01029 , H01L2924/12043 , H01L2924/014 , H01L2924/00
摘要： An image sensor unit has stacked imager and processor integrated circuits. The imager may have an image sensor pixel array on its front surface. Processor die may be mounted back-to-back with respective imagers on a wafer. A photodefinable dielectric film may cover the rear surface of the wafer. Metal traces in the photodefinable dielectric and through-silicon vias in each imager may be used to interconnect the processing circuitry on the front surface of a processor to the image sensor pixel array on the front surface of the imager. Openings may be formed in the photo definable dielectric to allow solder balls to form electrical connections with the metal traces. A cavity may be formed in a photo definable dielectric layer or an imager to accommodate the processor. The processor may also be mounted in a cavity in a separate silicon standoff structure before attaching the standoff structure to the imager.
摘要翻译：图像传感器单元具有堆叠的成像器和处理器集成电路。成像器在其前表面上可以具有图像传感器像素阵列。处理器管芯可以与晶片上的相应成像器背靠背安装。可光限定的电介质膜可以覆盖晶片的后表面。可以使用每个成像器中的光可定义电介质和穿硅通孔中的金属迹线将处理器前表面上的处理电路与成像器前表面上的图像传感器像素阵列互连。可以在可光电介质中形成开口以允许焊球与金属迹线形成电连接。空腔可以形成在可光定义的介电层或成像器中以容纳处理器。在将间隔结构附接到成像器之前，处理器还可以安装在分离的硅隔离结构中的空腔中。

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