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1. 发明授权

US06734102B2 Plasma treatment for copper oxide reduction 有权
公开(公告)号：US06734102B2
公开(公告)日：2004-05-11
申请号：US10252195
申请日：2002-09-23
申请人： Sudha Rathi , Ping Xu , Judy Huang
发明人： Sudha Rathi , Ping Xu , Judy Huang
IPC分类号： H01L23205
CPC分类号： H01L21/32136 , B08B7/0035 , C23C16/0245 , C23G5/00 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/76807 , H01L21/76883 , Y10S438/907
摘要： The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

2. 发明授权

US06541369B2 Method and apparatus for reducing fixed charges in a semiconductor device 失效
标题翻译：用于减少半导体器件中的固定电荷的方法和装置
公开(公告)号：US06541369B2
公开(公告)日：2003-04-01
申请号：US09457086
申请日：1999-12-07
申请人： Judy Huang , Chris Bencher , Sudha Rathi
发明人： Judy Huang , Chris Bencher , Sudha Rathi
IPC分类号： H02L2131
CPC分类号： C23C16/45523 , C23C16/029 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/314 , H01L21/3146 , H01L21/31612 , H01L21/31633 , H01L2924/0002 , Y10S438/931 , Y10S438/94 , Y10S438/952 , H01L2924/00
摘要： A method and apparatus for reducing trapped charges in a semiconductor device having a first layer and a second layer, said method comprising the steps of providing said first layer, flowing a deposition, a dilution and a conversion gas upon said first layer thereby forming a transition layer, phasing out said flow of conversion gas and forming said second layer upon said transition layer. The deposition gas, dilution gas and conversion gas are preferably trimethylsilane, helium and N2O respectively. The method is performed via chemical vapor deposition or plasma enhanced chemical vapor deposition. The apparatus has a first insulating layer, a transition layer disposed upon said first layer and a second insulating layer disposed upon said transition layer. The transition layer improves the adhesion between said first insulating layer and said second insulating layer. A reduction in the amount of electrical charges (i.e., ions, electrons or the like) trapped between layers of deposited material improves the integrity and quality of devices formed from such layers.
摘要翻译：一种用于在具有第一层和第二层的半导体器件中减少俘获电荷的方法和装置，所述方法包括以下步骤：提供所述第一层，使沉积物，稀释物和转化气体流动到所述第一层上，从而形成转变逐层淘汰所述转化气体流并在所述过渡层上形成所述第二层。沉积气体，稀释气体和转化气体分别优选为三甲基硅烷，氦气和N 2 O 3。该方法通过化学气相沉积或等离子体增强化学气相沉积进行。该装置具有第一绝缘层，设置在所述第一层上的过渡层和设置在所述过渡层上的第二绝缘层。过渡层改善了所述第一绝缘层和所述第二绝缘层之间的粘合性。捕集在沉积材料层之间的电荷量（即离子，电子等）的减少提高了由这些层形成的器件的完整性和质量。

3. 发明申请

US20050263900A1 Semiconductor device having silicon carbide and conductive pathway interface 审中-公开
标题翻译：具有碳化硅和导电通路接口的半导体器件
公开(公告)号：US20050263900A1
公开(公告)日：2005-12-01
申请号：US11169337
申请日：2005-06-29
申请人： Judy Huang , Christopher Bencher , Sudha Rathi , Christopher Ngai , Bok Kim
发明人： Judy Huang , Christopher Bencher , Sudha Rathi , Christopher Ngai , Bok Kim
IPC分类号： H01L21/302 , B08B7/00 , C23C16/02 , C23G5/00 , H01L21/02 , H01L21/306 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/314 , H01L21/318 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L23/10 , H01L23/52 , H01L23/532
CPC分类号： H01L21/02274 , B08B7/0035 , C23C16/0245 , C23G5/00 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/02074 , H01L21/02115 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/0234 , H01L21/31116 , H01L21/3148 , H01L21/3185 , H01L21/32136 , H01L21/76807 , H01L21/76834 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.
摘要翻译：本发明提供了一种原位等离子体还原方法以在沉积其后的层之前，在相对较低的温度下使用氮气和氢气（通常为氨）的化合物来还原氧化物或其它污染物。与氧化物层的典型的物理溅射清洗工艺相比，这些层的粘合特性得到改善，氧的存在降低。该方法对于双镶嵌结构的复杂要求尤其有用，特别是对于铜应用。

4. 发明授权

US09653327B2 Methods of removing a material layer from a substrate using water vapor treatment 有权
公开(公告)号：US09653327B2
公开(公告)日：2017-05-16
申请号：US13291286
申请日：2011-11-08
申请人： Kwangduk Douglas Lee , Sudha Rathi , Chiu Chan , Martin J. Seamons , Bok Heon Kim
发明人： Kwangduk Douglas Lee , Sudha Rathi , Chiu Chan , Martin J. Seamons , Bok Heon Kim
IPC分类号： H01L21/3065 , H01L21/67 , C23C16/02 , H01L21/02 , H01L21/311 , H01L21/768
CPC分类号： H01L21/6704 , C23C16/0245 , H01L21/02063 , H01L21/31122 , H01L21/31144 , H01L21/76814
摘要： Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.

5. 发明授权

US08513129B2 Planarizing etch hardmask to increase pattern density and aspect ratio 失效
标题翻译：平铺蚀刻硬掩模以增加图案密度和纵横比
公开(公告)号：US08513129B2
公开(公告)日：2013-08-20
申请号：US12790203
申请日：2010-05-28
申请人： Martin Jay Seamons , Kwangduk Douglas Lee , Chiu Chan , Patrick Reilly , Sudha Rathi
发明人： Martin Jay Seamons , Kwangduk Douglas Lee , Chiu Chan , Patrick Reilly , Sudha Rathi
IPC分类号： H01L21/311 , H01L23/58
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/0337
摘要： Methods for manufacturing a semiconductor device are provided. In one embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and has a first set of interconnect features. The first film stack comprises a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer. The first photoresist layer is patterned by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.
摘要翻译：提供了制造半导体器件的方法。在一个实施例中，一种方法包括提供具有沉积在其上的第一膜堆叠的基底材料，其中基底材料形成在衬底上并且具有第一组互连特征。第一薄膜叠层包括沉积在基材表面上的第一非晶碳层，沉积在第一非晶碳层上的第一抗反射涂层和沉积在第一抗反射涂层上的第一光致抗蚀剂层。通过在第一光致抗蚀剂层上相对于衬底的掩模的投影横向移动所需的距离来对第一光致抗蚀剂层进行构图，从而将第一特征图案引入第一光刻胶层以转移到下面的基底材料，其中第一特征图案不与第一组互连特征对齐。

6. 发明申请

US20120285481A1 METHODS OF REMOVING A MATERIAL LAYER FROM A SUBSTRATE USING WATER VAPOR TREATMENT 有权
标题翻译：使用水蒸气处理从基板上移除材料层的方法
公开(公告)号：US20120285481A1
公开(公告)日：2012-11-15
申请号：US13291286
申请日：2011-11-08
申请人： Kwangduk Douglas Lee , Sudha Rathi , Chiu Chan , Martin J. Seamons , Bok Heon Kim
发明人： Kwangduk Douglas Lee , Sudha Rathi , Chiu Chan , Martin J. Seamons , Bok Heon Kim
IPC分类号： B08B6/00 , B08B7/04 , B08B5/00
CPC分类号： H01L21/6704 , C23C16/0245 , H01L21/02063 , H01L21/31122 , H01L21/31144 , H01L21/76814
摘要： Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.
摘要翻译：本发明的实施方案一般涉及使用水蒸气等离子体处理去除和/或清洁其上设置有不同材料层的衬底表面的方法。在一个实施例中，一种用于清洁衬底的表面的方法包括将衬底定位到处理室中，所述衬底具有设置在其上的电介质层，在衬底上形成开口，将设置在衬底上的电介质层暴露于供应到衬底在水蒸气中形成等离子体，将腔室中的处理压力保持在约1托至约120托之间，并清洁形成在基底上的接触结构。

7. 发明授权

US08125034B2 Graded ARC for high NA and immersion lithography 有权
标题翻译：分级ARC用于高NA和浸没光刻
公开(公告)号：US08125034B2
公开(公告)日：2012-02-28
申请号：US12797406
申请日：2010-06-09
申请人： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
发明人： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
IPC分类号： H01L23/48
CPC分类号： G03F7/091 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
摘要翻译：提供了使用渐变抗反射涂层形成装置的方法。在基板上形成一个或多个非晶碳层。在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。在ARC层上形成能量敏感的抗蚀剂材料。通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。开发了引入能量敏感抗蚀剂材料层的图案的图像。

8. 发明授权

US08105465B2 Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) 有权
标题翻译：通过等离子体增强化学气相沉积（PECVD）沉积适形非晶碳膜的方法
公开(公告)号：US08105465B2
公开(公告)日：2012-01-31
申请号：US12577455
申请日：2009-10-12
申请人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
发明人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
IPC分类号： C01B31/00
CPC分类号： H01L21/3146 , C23C16/26 , C23C16/45523 , C23C16/5096 , H01L21/3141
摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：提供了在基板上沉积无定形碳层的方法和装置。在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成基底上的共形无定形碳层。

9. 发明申请

US20110151142A1 PECVD MULTI-STEP PROCESSING WITH CONTINUOUS PLASMA 审中-公开
标题翻译： PECVD多步加工连续等离子体
公开(公告)号：US20110151142A1
公开(公告)日：2011-06-23
申请号：US12969333
申请日：2010-12-15
申请人： Martin Jay Seamons , Sum-Yee Betty Tang , Michael H. Lin , Patrick Reilly , Sudha Rathi
发明人： Martin Jay Seamons , Sum-Yee Betty Tang , Michael H. Lin , Patrick Reilly , Sudha Rathi
IPC分类号： H05H1/24
CPC分类号： C23C16/45523 , C23C16/4401
摘要： Embodiments of the present invention provide methods for reducing defects during multi-layer deposition. In one embodiment, the method includes exposing the substrate to a first gas mixture and an inert gas in the presence of a plasma to deposit a first material layer on the substrate, terminating the first gas mixture when a desired thickness of the first material is achieved while still maintaining the plasma and flowing the inert gas, and exposing the substrate to the inert gas and a second gas mixture that are compatible with the first gas mixture in the presence of the plasma to deposit a second material layer over the first material layer in the same processing chamber, wherein the first material layer and the second material layer are different from each other.
摘要翻译：本发明的实施例提供了在多层沉积期间减少缺陷的方法。在一个实施例中，该方法包括在存在等离子体的情况下将衬底暴露于第一气体混合物和惰性气体，以在衬底上沉积第一材料层，当达到所需的第一材料厚度时终止第一气体混合物同时仍保持等离子体并使惰性气体流动，并将衬底暴露于惰性气体和在存在等离子体的情况下与第一气体混合物相容的第二气体混合物以在第一材料层上沉积第二材料层相同的处理室，其中第一材料层和第二材料层彼此不同。

10. 发明申请

US20110104400A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20110104400A1
公开(公告)日：2011-05-05
申请号：US12987688
申请日：2011-01-10
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： C23C26/00 , H05H1/24
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

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