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1. 发明申请

US20070057271A1 Interconnects for semiconductor light emitting devices 有权
标题翻译：互连用于半导体发光器件
公开(公告)号：US20070057271A1
公开(公告)日：2007-03-15
申请号：US11226151
申请日：2005-09-13
申请人： Stefano Schiaffino , Ashim Haque , Paul Martin , Daniel Steigerwald , Decai Sun
发明人： Stefano Schiaffino , Ashim Haque , Paul Martin , Daniel Steigerwald , Decai Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.
摘要翻译：包括设置在n型区域和p型区域之间的发光层和与n型区域和p型区域电连接的触点的半导体发光器件连接到安装件。任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。电镀金属层可以替代其他已知的互连技术，例如柱状凸块。半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

2. 发明申请

US20080142833A1 Interconnects for semiconductor light emitting devices 审中-公开
公开(公告)号：US20080142833A1
公开(公告)日：2008-06-19
申请号：US12028925
申请日：2008-02-11
申请人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
发明人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

3. 发明授权

US07348212B2 Interconnects for semiconductor light emitting devices 有权
标题翻译：互连用于半导体发光器件
公开(公告)号：US07348212B2
公开(公告)日：2008-03-25
申请号：US11226151
申请日：2005-09-13
申请人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
发明人： Stefano Schiaffino , Ashim Shatil Haque , Paul S. Martin , Daniel A. Steigerwald , Decai Sun
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.
摘要翻译：包括设置在n型区域和p型区域之间的发光层和电连接到n型区域和p型区域的触点的半导体发光器件连接到安装件。任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。电镀金属层可以替代其他已知的互连技术，例如柱状凸块。半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。

4. 发明授权

US07756168B2 Method for improving high frequency operation of a vertical cavity surface emitting laser (VCSEL) with monolithically integrated bridge arm 有权
标题翻译：用于改进具有单片集成桥臂的垂直腔面发射激光器（VCSEL）的高频操作的方法
公开(公告)号：US07756168B2
公开(公告)日：2010-07-13
申请号：US10900015
申请日：2004-07-26
申请人： Phil Floyd , Peter Kner , Decai Sun
发明人： Phil Floyd , Peter Kner , Decai Sun
IPC分类号： H01S3/10
CPC分类号： H01S5/18366 , H01S5/0425 , H01S5/0607
摘要： A vertical cavity laser apparatus is provided. In one embodiment, the apparatus includes an electrically responsive substrate; a support block positioned on the electrically responsive substrate; a bridge arm structure coupled to the support block, the structure having a base; a laser active area on the bridge arm structure, a tuning pad on the bridge arm structure, a laser bond pad on the bridge arm structure with traces connecting the laser bond pad to the laser active area and base. The traces are positioned and shaped to be symmetric to avoid problems due to the asymmetry of the injection current. Additionally, in this embodiment, the laser bond pad is kept at a height of the base in order to minimize device capacitance and the traces are also kept at the height of the base. Methods are also provided whereby impedance matching and high speed performance can be accomplished irregardless of the mechanical configuration of the bridge arm structure.
摘要翻译：提供了一种垂直腔激光装置。在一个实施例中，该装置包括电响应基板; 位于所述电响应基板上的支撑块; 耦合到所述支撑块的桥臂结构，所述结构具有基部; 桥臂结构上的激光有源区域，桥臂结构上的调谐板，桥臂结构上的激光键合焊盘，其具有将激光键合焊盘连接到激光器有源区域和基底的迹线。迹线被定位和成形为对称以避免由于注入电流的不对称性引起的问题。此外，在本实施例中，激光焊盘保持在基座的高度，以便最小化器件电容，并且迹线也保持在基座的高度。还提供了可以实现阻抗匹配和高速性能的方法，无论桥臂结构的机械结构如何。

5. 发明授权

US07284324B2 Method of making photolithographically-patterned out-of-plane coil structures 有权
标题翻译：制造光刻图案的平面外线圈结构的方法
公开(公告)号：US07284324B2
公开(公告)日：2007-10-23
申请号：US11197675
申请日：2005-08-04
申请人： Christopher L. Chua , Francesco Lemmi , Koenraad F. Van Schuylenbergh , Jeng Ping Lu , David K. Fork , Eric Peeters , Decai Sun , Donald L. Smith , Linda T. Romano
发明人： Christopher L. Chua , Francesco Lemmi , Koenraad F. Van Schuylenbergh , Jeng Ping Lu , David K. Fork , Eric Peeters , Decai Sun , Donald L. Smith , Linda T. Romano
IPC分类号： H01R43/16
CPC分类号： H01L24/13 , G01R1/06727 , G01R3/00 , H01F17/0033 , H01F17/02 , H01F41/041 , H01L21/76838 , H01L21/7688 , H01L23/498 , H01L23/49811 , H01L23/5227 , H01L24/11 , H01L24/16 , H01L24/48 , H01L28/10 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13099 , H01L2224/4847 , H01L2224/8592 , H01L2924/0001 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01061 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12034 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/4902 , Y10T29/49071 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/4921 , Y10T29/49218 , H01L2924/00 , H01L2224/05599 , H01L2224/85399 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.
摘要翻译：可以用于高Q电感和变压器的片上集成的平面外微结构使得磁场方向平行于衬底平面而不需要高纵横比处理。光刻图案的线圈结构包括具有固有应力分布的弹性构件。固有的应力分布使形成环绕的基板远离基板偏移。锚固部分保持固定到基底上。自由部分端部成为可以通过焊接或电镀而连接到基板的第二锚固部分。一系列单独的线圈结构可以通过它们的锚定部分接合以形成电感器和变压器。

6. 发明授权

US07120182B2 Densely-packed light emitters with layered semiconductor structure and methods of making the light emitters 有权
标题翻译：具有分层半导体结构的密集发光体和制造发光体的方法
公开(公告)号：US07120182B2
公开(公告)日：2006-10-10
申请号：US10739181
申请日：2003-12-19
申请人： Christopher L. Chua , Decai Sun
发明人： Christopher L. Chua , Decai Sun
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/22 , H01S5/2275 , H01S5/34313 , H01S5/4031
摘要： An array of light emitters includes a plurality of light emitting structures formed over a layered structure with at least one quantum well layer. At least one cladding layer is formed on over the at least one quantum well layer. At least one waveguide layer is formed on or over the at least one cladding layer. At least one isolation region is formed at least in between at least two of the plurality of light emitting structures. The at least one isolation region isolates the at least two light emitting structures from each other.
摘要翻译：光发射器阵列包括在具有至少一个量子阱层的分层结构上形成的多个发光结构。在所述至少一个量子阱层上形成至少一个覆层。至少一个波导层形成在至少一个包层上或上面。至少在多个发光结构中的至少两个之间形成至少一个隔离区域。所述至少一个隔离区将所述至少两个发光结构彼此隔离。

7. 发明授权

US06647036B1 Integration and alignment of VCSEL's with MEMS using micromachining and flip-chip techniques 有权
标题翻译： VCSEL与MEMS的集成和对准使用微加工和倒装芯片技术
公开(公告)号：US06647036B1
公开(公告)日：2003-11-11
申请号：US09731154
申请日：2000-12-06
申请人： Decai Sun , Michel A. Rosa
发明人： Decai Sun , Michel A. Rosa
IPC分类号： H01S304
CPC分类号： B81C3/002 , B81B2201/047 , B81C2203/058 , H01S5/02252 , H01S5/02272 , H01S5/183 , H01S5/423 , H05K1/183 , H05K3/3442
摘要： A micro-electromechanical system assembly is designed to integrate a laser. More particularly, laser is a vertical cavity surface-emitting laser. The MEMS assembly includes a micro-electromechanical substrate having an upper surface and a lower surface, the upper surface defined as having a first area and a second area. A first substrate bonding pad is positioned on the upper surface at a location within the first area, and a second substrate bonding pad is positioned on the upper surface at a location within the second area. Deposited upon the first and second substrate bonding areas are respective first and second solder material. A laser to be integrated in the MEMS assembly has a first laser bonding pad located on a first side, and a second laser bonding pad located on a second side. The laser is placed between the first substrate bonding pad and second substrate bonding pad such that they align with the respective first and second laser bonding pads. Upon a reflow of the solder material, a precise alignment of the laser is obtained while the reflow process occurs, and at the same time providing a mechanical and electrical connection between the bonding pads. In a further embodiment, the MEMS substrate is configured with a trench portion into which is placed the laser having the first and second laser bonding pads. Placement in the trench, is at least one of a 45° and 54.74° angle. Upon reflow of solder material on the substrate, the laser is finely positioned and held mechanically stable. In a further embodiment, the trench previously described includes a spring mechanism which carries a substrate bonding pad. The spring mechanism causing the laser within the trench to be maintained in a preferred position during and after the solder reflow process. Still yet another embodiment employs bimetallic cantilevers for positioning the laser and electrical interconnect.
摘要翻译：微机电系统组件被设计为集成激光器。更具体地，激光是垂直腔表面发射激光器。 MEMS组件包括具有上表面和下表面的微机电衬底，所述上表面限定为具有第一区域和第二区域。第一衬底接合焊盘位于第一区域内的位置的上表面上，第二衬底接合焊盘位于第二区域内的位置的上表面上。沉积在第一和第二衬底接合区域上的是相应的第一和第二焊料材料。集成在MEMS组件中的激光器具有位于第一侧的第一激光焊盘和位于第二侧的第二激光焊盘。激光器被放置在第一衬底焊盘和第二衬底焊盘之间，使得它们与相应的第一和第二激光焊盘对准。当焊料回流时，在回流过程发生时获得激光的精确对准，并且同时在接合焊盘之间提供机械和电连接。在另一实施例中，MEMS衬底被配置有沟槽部分，放置有具有第一和第二激光焊盘的激光器。放置在沟槽中，是45°和54.74°角中的至少一个。在衬底上焊料材料回流时，激光器被精细地定位并保持机械稳定。在另一实施例中，先前描述的沟槽包括一个承载衬底接合焊盘的弹簧机构。在焊料回流过程中和之后使引起沟槽内的激光的弹簧机构保持在优选的位置。又一实施例采用双金属悬臂来定位激光和电互连。

8. 发明授权

US06580858B2 Micro-opto-electro-mechanical system (MOEMS) 失效
公开(公告)号：US06580858B2
公开(公告)日：2003-06-17
申请号：US09844574
申请日：2001-04-30
申请人： Jingkuang Chen , Joel A. Kubby , Decai Sun
发明人： Jingkuang Chen , Joel A. Kubby , Decai Sun
IPC分类号： G02B642
CPC分类号： G02B6/35 , G02B6/3512 , G02B6/3582 , G02B6/3584 , G02B6/3598 , G02B6/4214
摘要： A MEMS-based adjustable mirror module allows faster, lower cost, and easier alignment of optical fibers in substrates. Movable mirrors formed on the substrate allow adjustment of the light path after the optical fiber is attached, after which the mirrors are affixed in place to prevent misalignment.

9. 发明授权

US6058124A Monolithic independently addressable Red/IR side by side laser 失效
标题翻译：单片可独立寻址的红/红并排激光
公开(公告)号：US6058124A
公开(公告)日：2000-05-02
申请号：US976845
申请日：1997-11-25
申请人： Decai Sun , Ross D. Bringans
发明人： Decai Sun , Ross D. Bringans
IPC分类号： H01S5/02 , H01S5/22 , H01S5/323 , H01S5/40 , H01S3/085
CPC分类号： H01S5/4031 , H01S5/02 , H01S5/2214 , H01S5/32316 , H01S5/32341 , H01S5/4087
摘要： A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.
摘要翻译：单片激光器结构具有红外激光结构并排的红外激光结构。红外和红色激光结构共享相同的基板，并且具有用于包覆层和盖和阻挡层还原层的相同材料。红色和红外激光结构可以具有自然氧化物限制或金属限制脊状波导。

10. 发明授权

US6054335A Fabrication of scanning III-V compound light emitters integrated with Si-based actuators 有权
标题翻译：与Si基致动器集成的扫描III-V复合发光体的制造
公开(公告)号：US6054335A
公开(公告)日：2000-04-25
申请号：US209866
申请日：1998-12-11
申请人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
发明人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC分类号： B81B3/00 , B81B7/02 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/42 , H01L21/00
CPC分类号： H01S5/18308 , H01S5/02288 , H01L27/15 , H01S5/021 , H01S5/02252 , H01S5/4087 , H01S5/423 , H01S5/426
摘要： A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.
摘要翻译： III-V复合光发射器与Si基致动器集成。提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。

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