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1. 发明授权

US07564545B2 Inspection methods and systems for lithographic masks 有权
标题翻译：光刻掩模的检验方法和系统
公开(公告)号：US07564545B2
公开(公告)日：2009-07-21
申请号：US11724905
申请日：2007-03-15
申请人： Stanley E. Stokowski
发明人： Stanley E. Stokowski
IPC分类号： G06K9/00
CPC分类号： G03F7/705
摘要： Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.
摘要翻译：公开了用于在掩模版上发现光刻显着缺陷的装置和方法。通常，使用检查装置获得所述掩模版的至少一对相关强度图像。获得强度图像，使得每个图像对于掩模版经历不同的焦点设置，使得在图像的两个焦点值之间存在恒定的聚焦偏移。然后分析这些图像以获得掩模版的透射函数。然后将该透射函数输入到光刻系统的模型（例如，步进器，扫描仪或其它相关的光刻系统）中，以产生标线图案的空中图像。然后可以将产生的空间图像输入到光致抗蚀剂模型，以产生对应于使用掩模版印刷到基板上的图像图案的“抗蚀剂建模图像”。然后将该抗蚀剂建模的图像与参考图像进行比较以获得缺陷信息。特别地，由于引入了光刻工具和光致抗蚀剂模型，该缺陷信息涉及光刻显着的缺陷。

2. 发明授权

US07297453B2 Systems and methods for mitigating variances on a patterned wafer using a prediction model 有权
标题翻译：使用预测模型减轻图案化晶片上的方差的系统和方法
公开(公告)号：US07297453B2
公开(公告)日：2007-11-20
申请号：US11394900
申请日：2006-03-31
申请人： Sterling G. Watson , Ady Levy , Chris A. Mack , Stanley E. Stokowski , Zain K. Saidin
发明人： Sterling G. Watson , Ady Levy , Chris A. Mack , Stanley E. Stokowski , Zain K. Saidin
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F1/84 , G03F1/36 , Y10S430/146
摘要： Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.
摘要翻译：公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积在指定位置。在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

3. 发明授权

US4060729A Pyroelectric detector with decreased susceptibility to vibrational noise 失效
标题翻译：热电探测器具有降低的振动噪声敏感性
公开(公告)号：US4060729A
公开(公告)日：1977-11-29
申请号：US749256
申请日：1976-12-10
申请人： Norman E. Byer , Stanley E. Stokowski , John D. Venables
发明人： Norman E. Byer , Stanley E. Stokowski , John D. Venables
IPC分类号： G01J5/34 , H01L37/02 , G01T1/16
CPC分类号： H01L37/02 , G01J5/34 , H01L2224/48463
摘要： Pyroelectric thermal detector with decreased susceptibility to vibrational noise is formed of a wafer of pyroelectric material having a thin central region supported and surrounded by a thicker rim. On the central region deposited electrodes define active detecting regions that are mirror images of each other across a line separating them. The active regions may be oppositely polarized domains electrically connected in parallel, or a continuous domain with the active regions electrically connected in series opposition. The deposited electrodes are brought out to the rim for external connection. The rim is everywhere spaced at least one thermal diffusion length from either active region. Mechanical support for the wafer is connected to the rim, is symmetrically disposed with respect to the line separating the active detecting regions, and is in contact with the rim over at least 75 percent of its linear extent.
摘要翻译：具有降低的振动噪声敏感性的热电检测器由热电材料晶片形成，其具有由较厚边缘支撑并包围的薄中心区域。在中央区域，沉积的电极定义主动检测区域，这些区域是分隔它们的线路彼此的镜像。有源区可以是与之并联电连接的相反极化域，或者是连续区域，其中有源区域串联地相互电连接。沉积的电极被带到边缘进行外部连接。轮辋至少与任一活性区间隔开至少一个热扩散长度。晶片的机械支撑件连接到边缘，相对于分离有源检测区域的线对称地设置，并且在其线性范围的至少75％上与边缘接触。

4. 发明申请

US20110181868A1 INSPECTION SYSTEMS AND METHODS FOR DETECTING DEFECTS ON EXTREME ULTRAVIOLET MASK BLANKS 有权
标题翻译：用于检测极端超紫外线掩蔽缺陷的检测系统和方法
公开(公告)号：US20110181868A1
公开(公告)日：2011-07-28
申请号：US12811200
申请日：2010-06-10
申请人： Stanley E. Stokowski
发明人： Stanley E. Stokowski
IPC分类号： G01N21/88
CPC分类号： G03F1/84 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about −1 to −3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.
摘要翻译：提供了用于检查诸如极紫外（EUV）掩模坯料等未图案化物体的新颖的检查方法和系统，用于表面缺陷，包括极小的缺陷。缺陷可以包括各种相位物体，例如高度仅为约1纳米的凸起和凹坑以及小颗粒。检测在小于约250纳米的波长下进行，例如重新配置的深UV检测系统。部分相干σ设定在约0.15和0.5之间。通过使用一个或多个散焦的检查通道可以找到相位缺陷，例如在一个正的深度焦点（DOF）和一个负的DOF。在某些实施方案中，DOF在约-1至-3和/或+1至+3之间。可以组合多次检查通过的结果来区分缺陷类型。检查方法可以包括应用匹配滤波器，阈值和/或校正因子，以便提高信噪比。

5. 发明申请

US20080226157A1 Inspection methods and systems for lithographic masks 有权
标题翻译：光刻掩模的检验方法和系统
公开(公告)号：US20080226157A1
公开(公告)日：2008-09-18
申请号：US11724905
申请日：2007-03-15
申请人： Stanley E. Stokowski
发明人： Stanley E. Stokowski
IPC分类号： G06K9/00
CPC分类号： G03F7/705
摘要： Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.
摘要翻译：公开了用于在掩模版上发现光刻显着缺陷的装置和方法。通常，使用检查装置获得所述掩模版的至少一对相关强度图像。获得强度图像，使得每个图像对于掩模版经历不同的焦点设置，使得在图像的两个焦点值之间存在恒定的聚焦偏移。然后分析这些图像以获得掩模版的透射函数。然后将该透射函数输入到光刻系统的模型（例如，步进器，扫描仪或其它相关的光刻系统）中，以产生标线图案的空中图像。然后可以将产生的空间图像输入到光致抗蚀剂模型，以产生对应于使用掩模版印刷到基板上的图像图案的“抗蚀剂建模图像”。然后将该抗蚀剂建模的图像与参考图像进行比较以获得缺陷信息。特别地，由于引入了光刻工具和光致抗蚀剂模型，该缺陷信息涉及光刻显着的缺陷。

6. 发明授权

US07084967B2 Scanning system for inspecting anomalies on surfaces 失效
标题翻译：用于检查表面异常的扫描系统
公开(公告)号：US07084967B2
公开(公告)日：2006-08-01
申请号：US10948814
申请日：2004-09-22
申请人： Mehrdad Nikoonahad , Stanley E. Stokowski
发明人： Mehrdad Nikoonahad , Stanley E. Stokowski
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5–15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要翻译：高灵敏度和高通量的表面检查系统将聚焦光束以掠射角度朝向要检查的表面。在光束和表面之间产生相对运动，使得光束扫描覆盖基本上整个表面的扫描路径，并且收集沿着路径散射的光以便用于检测烟雾。扫描路径包括多个直扫描路径段阵列。聚焦光束照射宽度为5-15微米之间的表面区域，该系统能够对于150毫米直径的晶片（6英寸晶片）每小时检查超过约40个晶片，超过约20个对于300毫米直径的晶片（12英寸晶圆），每小时200毫米直径晶圆（8英寸晶圆）的晶片每小时超过约10片。

7. 发明授权

US06636302B2 Scanning system for inspecting anamolies on surfaces 失效
公开(公告)号：US06636302B2
公开(公告)日：2003-10-21
申请号：US09760558
申请日：2001-01-16
申请人： Mehrdad Nikoonahad , Stanley E. Stokowski
发明人： Mehrdad Nikoonahad , Stanley E. Stokowski
IPC分类号： G01N2188
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).

8. 发明授权

US5241366A Thin film thickness monitor 失效
标题翻译：薄膜厚度监视器
公开(公告)号：US5241366A
公开(公告)日：1993-08-31
申请号：US846207
申请日：1992-03-04
申请人： Christopher F. Bevis , Armand P. Neukermans , Stanley E. Stokowski , Ralph C. Wolf , Matthew B. Lutzker
发明人： Christopher F. Bevis , Armand P. Neukermans , Stanley E. Stokowski , Ralph C. Wolf , Matthew B. Lutzker
IPC分类号： G01B11/06
CPC分类号： G01B11/0625
摘要： A thin film thickness monitor using successive reflection of a polychromatic light beam off of reference thin film of variable optical thickness and a sample thin film whose thickness is to be determined, in which a monochromatic light source is used beforehand to first determine the actual optical thickness of the reference thin film at each relative position of the beam and reference thin film. In one embodiment, the ratio S/R of detected light intensity S from the sample thin film and detected light intensity R from the reference thin film is found for each relative position and the position at which the ratio is a maximum is determined. In another embodiment, this ratio is corrected by a corresponding ratio S.sub.1 /R.sub.1 derived from a bare wafer substrate. The sample can then be located behind additional optical surfaces, such as a vacuum port without causing substantial errors. In yet a third embodiment, the detected light intensity R2 from two reflections off of the reference thin film is used in place of intensity R, allowing very thin films to be accurately measured.
摘要翻译：一种薄膜厚度监视器，其使用从可变光学厚度的参考薄膜的多色光束的连续反射以及要确定其厚度的样品薄膜，其中预先使用单色光源以首先确定实际的光学厚度的参考薄膜在光束和参考薄膜的每个相对位置。在一个实施例中，对于每个相对位置找到来自样品薄膜的检测光强度S的比S / R和来自参考薄膜的检测光强度R，并且确定该比率是最大值的位置。在另一个实施例中，该比率由从裸晶片衬底衍生的对应比率S1 / R1进行校正。然后样品可以位于附加的光学表面之后，例如真空端口，而不会引起实质的错误。在第三实施例中，使用来自参考薄膜的两个反射的检测光强度R2代替强度R，从而允许精确测量非常薄的膜。

9. 发明授权

US08785082B2 Method and apparatus for inspecting a reflective lithographic mask blank and improving mask quality 有权
标题翻译：用于检查反光平版印版掩模毛坯并提高掩模质量的方法和装置
公开(公告)号：US08785082B2
公开(公告)日：2014-07-22
申请号：US13417982
申请日：2012-03-12
申请人： Yalin Xiong , Stanley E. Stokowski
发明人： Yalin Xiong , Stanley E. Stokowski
IPC分类号： G03F1/22 , G03F1/24 , G03F1/72
CPC分类号： G03F1/24 , G03F1/72 , G03F1/84
摘要： An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks, and patterned mask repair. The system performs blank inspection to identify defects at multiple focal planes within the blank. The mask can be relocated on the blank and alterations to the pattern can be developed to compensate for the defects prior to prior to patterning the mask. Once the mask has been patterned, the reticle is inspected to identify any additional or remaining defects that were not picked up during blank inspection or fully mitigated through pattern compensation. The patterned reticle can then be repaired prior to integrated circuit fabrication.
摘要翻译： EUV集成电路制造方法和系统EUV包括空白检查，缺陷表征，模拟，图案补偿，掩模写入器数据库的修改，图案化掩模的检查和模拟以及图案化掩模修复。系统执行空白检查以识别空白中多个焦平面上的缺陷。掩模可以重新定位在坯件上，并且可以开发对图案的改变以在图案化掩模之前补偿缺陷。一旦掩模被图案化，检查掩模版以识别在空白检查期间未被拾取的任何附加或剩余的缺陷，或通过图案补偿完全减轻。然后可以在集成电路制造之前修复图案化的掩模版。

10. 发明授权

US08711346B2 Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks 有权
标题翻译：用于检测极紫外线掩模毛坯缺陷的检测系统和方法
公开(公告)号：US08711346B2
公开(公告)日：2014-04-29
申请号：US12811200
申请日：2010-06-10
申请人： Stanley E. Stokowski
发明人： Stanley E. Stokowski
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about −1 to −3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.
摘要翻译：提供了用于检查诸如极紫外（EUV）掩模坯料等未图案化物体的新颖的检查方法和系统，用于表面缺陷，包括极小的缺陷。缺陷可以包括各种相位物体，例如高度仅为约1纳米的凸起和凹坑以及小颗粒。检测在小于约250纳米的波长下进行，例如重新配置的深UV检测系统。部分相干σ设定在约0.15和0.5之间。通过使用一个或多个散焦的检查通道可以找到相位缺陷，例如在一个正的深度焦点（DOF）和一个负的DOF。在某些实施方案中，DOF在约-1至-3和/或+1至+3之间。可以组合多次检查通过的结果来区分缺陷类型。检查方法可以包括应用匹配滤波器，阈值和/或校正因子，以便提高信噪比。

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