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1. 发明授权

US07084967B2 Scanning system for inspecting anomalies on surfaces 失效
标题翻译：用于检查表面异常的扫描系统
公开(公告)号：US07084967B2
公开(公告)日：2006-08-01
申请号：US10948814
申请日：2004-09-22
申请人： Mehrdad Nikoonahad , Stanley E. Stokowski
发明人： Mehrdad Nikoonahad , Stanley E. Stokowski
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5–15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要翻译：高灵敏度和高通量的表面检查系统将聚焦光束以掠射角度朝向要检查的表面。在光束和表面之间产生相对运动，使得光束扫描覆盖基本上整个表面的扫描路径，并且收集沿着路径散射的光以便用于检测烟雾。扫描路径包括多个直扫描路径段阵列。聚焦光束照射宽度为5-15微米之间的表面区域，该系统能够对于150毫米直径的晶片（6英寸晶片）每小时检查超过约40个晶片，超过约20个对于300毫米直径的晶片（12英寸晶圆），每小时200毫米直径晶圆（8英寸晶圆）的晶片每小时超过约10片。

2. 发明授权

US06636302B2 Scanning system for inspecting anamolies on surfaces 失效
公开(公告)号：US06636302B2
公开(公告)日：2003-10-21
申请号：US09760558
申请日：2001-01-16
申请人： Mehrdad Nikoonahad , Stanley E. Stokowski
发明人： Mehrdad Nikoonahad , Stanley E. Stokowski
IPC分类号： G01N2188
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).

3. 发明授权

US06215551B1 Scanning system for inspecting anomalies on surfaces 有权
标题翻译：用于检查表面异常的扫描系统
公开(公告)号：US06215551B1
公开(公告)日：2001-04-10
申请号：US09213022
申请日：1998-12-16
申请人： Mehrdad Nikoonahad , Stanley E. Stokowski
发明人： Mehrdad Nikoonahad , Stanley E. Stokowski
IPC分类号： G01N2188
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要翻译：高灵敏度和高通量的表面检查系统将聚焦光束以掠射角度朝向要检查的表面。在光束和表面之间产生相对运动，使得光束扫描覆盖基本上整个表面的扫描路径，并且收集沿着路径散射的光以便用于检测烟雾。扫描路径包括多个直扫描路径段阵列。聚焦光束照射宽度为5-15微米之间的表面区域，该系统能够对于150毫米直径的晶片（6英寸晶片）每小时检查超过约40个晶片，超过约20个对于300毫米直径的晶片（12英寸晶圆），每小时200毫米直径晶圆（8英寸晶圆）的晶片每小时超过约10片。

4. 发明授权

US5883710A Scanning system for inspecting anomalies on surfaces 失效
公开(公告)号：US5883710A
公开(公告)日：1999-03-16
申请号：US499995
申请日：1995-07-10
申请人： Mehrdad Nikoonahad , Stanley E. Stokowski
发明人： Mehrdad Nikoonahad , Stanley E. Stokowski
IPC分类号： G01N21/94 , G01N21/95 , G01N21/956 , G01N21/00
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).

5. 发明申请

US20090135416A1 Parametric Profiling Using Optical Spectroscopic Systems 有权
标题翻译：使用光谱系统进行参数分析
公开(公告)号：US20090135416A1
公开(公告)日：2009-05-28
申请号：US11868740
申请日：2007-10-08
申请人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
发明人： Andrei V. Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad , Ady Levy , Daniel C. Wack , Noah Bareket , Walter Mieher , Ted Dziura
IPC分类号： G01B11/28 , G01J3/00 , G01B11/00
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

6. 发明授权

US07477372B2 Optical scanning system for surface inspection 失效
标题翻译：光学扫描系统进行表面检查
公开(公告)号：US07477372B2
公开(公告)日：2009-01-13
申请号：US11738989
申请日：2007-04-23
申请人： Brian C. Leslie , Mehrdad Nikoonahad , Keith B. Wells
发明人： Brian C. Leslie , Mehrdad Nikoonahad , Keith B. Wells
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/94 , G01N21/9501
摘要： In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.
摘要翻译：在用于检测样品表面上的颗粒和图案缺陷的光学扫描系统中，光束被聚焦到表面上的照明光斑上，并且沿着扫描线扫描光斑。检测器邻近表面定位以收集来自检测器包括传感器的一维或二维阵列的点的散射光。沿着扫描线的多个位置中的每一个处从照明点散射的光被聚焦到阵列中的对应的传感器上。相对于照明光束对称放置的多个检测器检测来自光斑的横向和前向散射光。在比表面尺寸短的扫描线段的阵列上扫描该点。亮场通道可以调整样品表面的高度，以校正由表面的高度变化引起的误差。可以比较由检测器输出提供的不同缺陷图，以识别和分类缺陷。传感器阵列的成像功能结合了扫描系统和成像系统的优点，同时提高了系统的信号/背景比。

7. 发明授权

US07349090B2 Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography 有权
标题翻译：用于确定在光刻之前，期间或之后的样品的性质的方法和系统
公开(公告)号：US07349090B2
公开(公告)日：2008-03-25
申请号：US09956849
申请日：2001-09-20
申请人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
发明人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
IPC分类号： G01J4/00
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N2021/646 , G01N2021/8825 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to lithography. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，该系统可以被配置为确定样品的多个性质，包括但不限于在光刻之前，期间或之后的样品的性质。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

8. 发明授权

US07130029B2 Methods and systems for determining an adhesion characteristic and a thickness of a specimen 有权
公开(公告)号：US07130029B2
公开(公告)日：2006-10-31
申请号：US09956850
申请日：2001-09-20
申请人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
发明人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
IPC分类号： G01N21/88
CPC分类号： G03F7/70708 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, an adhesion characteristic and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

9. 发明申请

US20060132806A1 Parametric profiling using optical spectroscopic systems to adjust processing parameter 有权
标题翻译：参数分析采用光谱系统调整处理参数
公开(公告)号：US20060132806A1
公开(公告)日：2006-06-22
申请号：US11343478
申请日：2006-01-30
申请人： Andrei Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad
发明人： Andrei Shchegrov , Anatoly Fabrikant , Mehrdad Nikoonahad
IPC分类号： G01B11/14
CPC分类号： H01L22/20 , G01J3/447 , G01J4/04 , G01N21/211
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

10. 发明授权

US06552803B1 Detection of film thickness through induced acoustic pulse-echos 有权
标题翻译：通过感应声脉冲回波检测膜厚度
公开(公告)号：US06552803B1
公开(公告)日：2003-04-22
申请号：US09375664
申请日：1999-08-17
申请人： Haiming Wang , Shing Lee , Mehrdad Nikoonahad
发明人： Haiming Wang , Shing Lee , Mehrdad Nikoonahad
IPC分类号： G01B902
CPC分类号： G01B17/025 , G01B11/0675 , G01N29/2418 , G01N29/348 , G01N2291/014 , G01N2291/02854 , G01N2291/0427
摘要： Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Heterodyne interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.
摘要翻译：可以通过将泵浦激光脉冲引导到样品的表面以在样品中产生声脉冲来检测样品中的膜的厚度。声脉冲向下传播直到其到达膜的底部和基底之间的界面并且作为第一回波被反射回到膜的顶表面。第一个回波的反射向下传播并再次反射回到表面作为第二回波。使用异步干涉测量来测量第一和第二回波之间的时间流逝，从该距离可以确定膜的厚度。

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