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1. 发明授权

US06942753B2 Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition 有权
标题翻译：用于大面积等离子体增强化学气相沉积的气体分配板组件
公开(公告)号：US06942753B2
公开(公告)日：2005-09-13
申请号：US10417592
申请日：2003-04-16
申请人： Soo Young Choi , Quanyuan Shang , Robert I. Greene , Li Hou
发明人： Soo Young Choi , Quanyuan Shang , Robert I. Greene , Li Hou
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00 , C23C16/452 , C23F1/00 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the diffuser plate. At least one of the gas passages includes a first hole and a second hole coupled by an orifice hole. The first hole extends from the upstream side of the diffuser plate while the second hole extends from the downstream side. The orifice hole has a diameter less than the respective diameters of the first and second holes.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，气体分配板包括具有通过扩散板的上游侧和下游侧之间的多个气体通道的扩散板。至少一个气体通道包括第一孔和通过孔口联接的第二孔。第一孔从扩散板的上游侧延伸，而第二孔从下游侧延伸。孔口的直径小于第一孔和第二孔的直径。

2. 发明授权

US07732010B2 Method for supporting a glass substrate to improve uniform deposition thickness 有权
标题翻译：支撑玻璃基板以改善均匀沉积厚度的方法
公开(公告)号：US07732010B2
公开(公告)日：2010-06-08
申请号：US11406136
申请日：2006-04-18
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.
摘要翻译：一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上基板接触面积。

3. 发明授权

US06355108B1 Film deposition using a finger type shadow frame 有权
标题翻译：使用手指型阴影框的胶片沉积
公开(公告)号：US06355108B1
公开(公告)日：2002-03-12
申请号：US09338245
申请日：1999-06-22
申请人： Tae Kyung Won , Quanyuan Shang , Robert M. Robertson , Soo Young Choi , Kam S. Law , Robert I. Greene , John M. White
发明人： Tae Kyung Won , Quanyuan Shang , Robert M. Robertson , Soo Young Choi , Kam S. Law , Robert I. Greene , John M. White
IPC分类号： C23C1600
CPC分类号： C23C16/24 , C23C16/345 , C23C16/4583 , C23C16/4585 , H01J37/32623
摘要： The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating plasma shield and a plurality of insulating alignment pins. The shadow frame comprises a plurality of tabs extending inwardly therefrom and is shaped to accommodate a substrate. The tabs comprise protruding contact surfaces for stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating plasma shield is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.
摘要翻译：本发明一般涉及用于衬底处理系统的夹紧和对准组件。夹持和对准组件通常包括阴影框架，浮动等离子体屏蔽件和多个绝缘对准销钉。阴影框架包括从其向内延伸的多个突片，并且成形为容纳衬底。突片包括用于在加工期间稳定支撑构件上的基板的突出接触表面。绝缘对准销布置在可移动支撑构件的周边处，并与形成在阴影框架中的对准凹槽配合，以将阴影框架推动到期望的位置。优选地，浮动等离子体屏蔽以间隔开的关系设置在绝缘对准销上，在支撑构件和阴影框架之间，以在加工期间屏蔽支撑构件的周边。

4. 发明授权

US06825134B2 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权
标题翻译：通过在连续气流中交替地脉冲前驱和高频功率沉积膜层
公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译：描述了膜层沉积的方法。使用循环沉积工艺沉积膜层。循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

5. 发明授权

US08372205B2 Reducing electrostatic charge by roughening the susceptor 有权
标题翻译：通过粗化基座来减少静电电荷
公开(公告)号：US08372205B2
公开(公告)日：2013-02-12
申请号：US11182168
申请日：2005-07-15
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

6. 发明授权

US07199061B2 Pecvd silicon oxide thin film deposition 有权
标题翻译： Pecvd氧化硅薄膜沉积
公开(公告)号：US07199061B2
公开(公告)日：2007-04-03
申请号：US10420417
申请日：2003-04-21
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L29/66765 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/28008 , H01L21/31612 , H01L29/4908
摘要： A method of depositing a gate dielectric layer for a thin film transistor is provided. The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.
摘要翻译：提供一种沉积用于薄膜晶体管的栅介质层的方法。使用包含含硅和氯的化合物的气体混合物的等离子体增强沉积来沉积栅极介电层。

7. 发明授权

US08795793B2 Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition 有权
标题翻译：气体扩散淋浴头设计用于大面积等离子体增强化学气相沉积
公开(公告)号：US08795793B2
公开(公告)日：2014-08-05
申请号：US12254742
申请日：2008-10-20
申请人： Soo Young Choi , John M. White , Robert I. Greene
发明人： Soo Young Choi , John M. White , Robert I. Greene
IPC分类号： H05H1/24 , C23C16/00 , C23C16/455
CPC分类号： C23C16/45559 , B05B1/005 , C23C16/4405 , C23C16/45565 , H01J37/3244
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状，并且对于扩散板的剩余长度为同轴圆锥形，锥形部分的上游端具有与锥形部分的右圆柱形部分和下游端具有较大的直径。气体分配板相对容易制造，提供良好的室清洁率，良好的薄膜沉积均匀性和良好的薄膜沉积速率。气体分配板还具有减小扩散器表面上的室清洁残留物的优点，并且减少了沉积在薄膜中的清洁残余物的结合。

8. 发明申请

US20080178807A1 GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS 审中-公开
标题翻译：气体分布均匀度改进由具有多个尺寸PECVD系统的多尺寸孔板
公开(公告)号：US20080178807A1
公开(公告)日：2008-07-31
申请号：US12099112
申请日：2008-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

9. 发明申请

US20050251990A1 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20050251990A1
公开(公告)日：2005-11-17
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： H01L21/02 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

10. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

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