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1. 发明申请

US20060236934A1 Plasma uniformity control by gas diffuser hole design 审中-公开
公开(公告)号：US20060236934A1
公开(公告)日：2006-10-26
申请号：US11473661
申请日：2006-06-22
申请人： Soo Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

2. 发明申请

US20060228496A1 Plasma uniformity control by gas diffuser curvature 有权
标题翻译：气体扩散器曲率等离子体均匀性控制
公开(公告)号：US20060228496A1
公开(公告)日：2006-10-12
申请号：US11173210
申请日：2005-07-01
申请人： Soo Choi , Beom Park , John White , Robin Tiner
发明人： Soo Choi , Beom Park , John White , Robin Tiner
IPC分类号： H05H1/24
CPC分类号： H01J37/32449 , H01J37/3244
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过气体通道的扩散板，并且在气体通道的下游侧具有空心阴极腔。扩散板的下游侧具有改善通过PECVD沉积的薄膜的厚度均匀性和膜特性均匀性的曲率，特别是SiN和非晶硅膜。该曲率优选地由圆或椭圆的圆弧描述，其顶点位于扩散板的中心点。在一个方面，空心阴极腔体积密度，表面积密度或扩散器的空腔密度从扩散器的中心增加到外边缘。还提供了制造这种扩散板的方法。

3. 发明申请

US20050251990A1 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20050251990A1
公开(公告)日：2005-11-17
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： H01L21/02 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

4. 发明申请

US20060060302A1 RF grounding of cathode in process chamber 有权
公开(公告)号：US20060060302A1
公开(公告)日：2006-03-23
申请号：US10946403
申请日：2004-09-21
申请人： John White , Robin Tiner , Beom Park , Wendell Blonigan
发明人： John White , Robin Tiner , Beom Park , Wendell Blonigan
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32082 , H01J37/32174
摘要： An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of probes, which either are electrically connected to the grounded chamber wall or are grounded by other means, and actuators accompanying the probes. The actuators move the probes to make electrical contact with the substrate support during substrate processing.

5. 发明申请

US20060005771A1 Apparatus and method of shaping profiles of large-area PECVD electrodes 审中-公开
标题翻译：大面积PECVD电极成形轮廓的装置和方法
公开(公告)号：US20060005771A1
公开(公告)日：2006-01-12
申请号：US11143506
申请日：2005-06-02
申请人： John White , Emanuel Beer , Wei Chang , Robin Tiner , Soo Choi
发明人： John White , Emanuel Beer , Wei Chang , Robin Tiner , Soo Choi
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23C16/4583 , H01J37/3244 , H01J2237/3325
摘要： An apparatus and method for shaping profiles of a large-area PECVD electrode is provided. A plasma-enhanced CVD chamber for processing a large-area substrate is first provided. The chamber includes a lower electrode that supports a large area substrate. The lower electrode is shaped to selectively conform the supported substrate in a selected orientation under operating conditions. The orientation may be either planar or nonplanar. The substrate complies with the shape of the electrode so the substrate is substantially parallel to an upper electrode in the chamber, and/or to a gas diffusion plate in the chamber. The lower electrode comprises a substrate support fabricated from a material of insufficient strength to support itself at operating temperatures and pressure in the chamber. The shape of the substrate support is adjusted by modifying the dimensions and/or planarity of a supporting base structure, and/or by appropriately varying the thickness of the substrate support.
摘要翻译：提供了一种用于形成大面积PECVD电极的轮廓的装置和方法。首先提供用于处理大面积基板的等离子体增强CVD室。该室包括支撑大面积基板的下电极。下电极被成形为在操作条件下以选定的方向选择性地使受支撑的衬底符合。取向可以是平面或非平面的。基板符合电极的形状，因此基板基本上平行于腔室中的上部电极，和/或腔室中的气体扩散板。下电极包括由强度不足的材料制成的衬底支撑件，以在腔室中的操作温度和压力下自身支撑。通过改变支撑基底结构的尺寸和/或平面度和/或通过适当地改变基底支撑件的厚度来调节基底支撑件的形状。

6. 发明申请

US20060032586A1 Reducing electrostatic charge by roughening the susceptor 有权
公开(公告)号：US20060032586A1
公开(公告)日：2006-02-16
申请号：US11182168
申请日：2005-07-15
申请人： Soo Choi , Beom Park , Quanyuan Shang , John White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Choi , Beom Park , Quanyuan Shang , John White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.

7. 发明申请

US20050233263A1 Growth of carbon nanotubes at low temperature 审中-公开
标题翻译：碳纳米管在低温下生长
公开(公告)号：US20050233263A1
公开(公告)日：2005-10-20
申请号：US10827915
申请日：2004-04-20
申请人： Beom Park , Soo Choi , John White
发明人： Beom Park , Soo Choi , John White
IPC分类号： C01B31/02 , C30B25/00 , C30B29/02 , C30B29/60 , G03F7/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/36 , C30B25/005 , C30B29/02 , C30B29/605
摘要： A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes are deposited on a plasma treated transition metal layer on a substrate. In one aspect, the transition metal layer is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400° C. and about 450° C.
摘要翻译：提供了一种在大型基板上沉积碳纳米管的方法。将碳纳米管沉积在基板上的等离子体处理的过渡金属层上。一方面，用等离子体氩或氮和氢的混合物处理过渡金属层。通过热化学气相沉积在约400℃至约450℃的衬底温度下沉积碳纳米管。

8. 发明申请

US20060185795A1 Anodized substrate support 有权
标题翻译：阳极氧化的底物支持
公开(公告)号：US20060185795A1
公开(公告)日：2006-08-24
申请号：US11406136
申请日：2006-04-18
申请人： Soo Choi , Beom Park , Quanyuan Shang , Robert Greene , John White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Choi , Beom Park , Quanyuan Shang , Robert Greene , John White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： H01L21/306 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约80至约200微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于将基底支撑在约80至约200微英寸之间。

9. 发明申请

US20060019502A1 Method of controlling the film properties of a CVD-deposited silicon nitride film 审中-公开
标题翻译：控制CVD沉积氮化硅膜的膜特性的方法
公开(公告)号：US20060019502A1
公开(公告)日：2006-01-26
申请号：US10897775
申请日：2004-07-23
申请人： Beom Park , Soo Choi , Tae Won , John White
发明人： Beom Park , Soo Choi , Tae Won , John White
IPC分类号： H01L21/469 , C23C16/00
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , H01L21/02208 , H01L21/02274 , H01L21/3185 , H01L29/4908 , H01L29/66765
摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
摘要翻译：我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2，在通过PECVD沉积在衬底上的a-SiN x H：H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。湿蚀刻速率是膜密度的指示。通常，湿蚀刻速率越低，膜越致密。向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加衬底表面沉积膜厚度的变化。本文所述的a-SiN x X：H膜在制造平板显示器时特别适用于TFT栅极电介质。跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

10. 发明申请

US20050233595A1 Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors 有权
标题翻译：通过控制成膜前体来控制氮化硅膜的性能和均匀性
公开(公告)号：US20050233595A1
公开(公告)日：2005-10-20
申请号：US10829016
申请日：2004-04-20
申请人： Soo Choi , Tae Won , Gaku Furuta , Qunhua Wang , John White , Beom Park
发明人： Soo Choi , Tae Won , Gaku Furuta , Qunhua Wang , John White , Beom Park
IPC分类号： C23C16/34 , H01L21/318 , H01L21/336 , H01L21/469 , H01L29/49 , H01L29/786
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.
摘要翻译：我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT器件排列在具有表面的衬底上时大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

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