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    • 6. 发明授权
    • Method for dividing semiconductor film formed on a substrate into plural
regions by backside energy beam irradiation
    • 通过背面能量束照射将形成在基板上的半导体膜分割为多个区域的方法
    • US4650524A
    • 1987-03-17
    • US745301
    • 1985-06-14
    • Seiichi KiyamaHideki Imai
    • Seiichi KiyamaHideki Imai
    • H01L27/142H01L31/0392H01L31/06H01L21/265
    • H01L31/03921H01L31/046H01L31/0463Y02E10/50Y10S438/94
    • An amorphous silicon film having a PIN junction inside in parallel to the film surface is formed extending continuously over transparent film electrodes in each plurality of regions being formed and spaced from each other on one main surface of a light transmissive substrate. A laser beam having a wave length covering a substantially ultraviolet rays region and a visible rays region is irradiated from the other main surface side of the light transmissive substrate to an adjacent spacing portion where the amorphous silicon film is to be divided and the amorphous silicon film lying therein is removed, thus the amorphous silicon film is divided into each plurality of regions. An aluminum electrode film is formed continuously covering the amorphous silicon film portions in each region. The laser beam is irradiated from the other main surface side of the light transmissive substrate to the adjacent spacing portion where the aluminum electrode film is to be divided and the aluminum electrode film lying therein is removed, thus the aluminum electrode film is divided in each plurality of regions. The divided aluminum film electrodes are connected to the transparent film electrodes in the adjacent regions, accordingly a plurality of photoelectric converting regions formed on the light transmissive substrate are connected in series.
    • 在透光性基板的一个主面上形成并分离的多个区域中的透明膜电极上连续形成有与膜表面平行的PIN结的非晶硅膜。 具有覆盖基本上紫外线区域和可见光区域的波长的激光束从透光基板的另一个主面侧照射到非晶硅膜被分割的相邻间隔部分,并且非晶硅膜 去除其中的位置,因此将非晶硅膜分成多个区域。 连续地覆盖每个区域中的非晶硅膜部分的铝电极膜。 激光束从透光基板的另一个主表面侧照射到要分割铝电极膜的相邻间隔部分,并且其中位于其中的铝电极膜被去除,因此铝电极膜被分成多个 的地区。 分割的铝膜电极连接到相邻区域中的透明膜电极,因此形成在透光基板上的多个光电转换区域串联连接。
    • 7. 发明授权
    • Photovoltaic device including plural interconnected photoelectric cells,
and method of making the same
    • 包括多个相互连接的光电单元的光伏器件及其制造方法
    • US5639314A
    • 1997-06-17
    • US457400
    • 1995-06-01
    • Tatsuya KuraSeiichi KiyamaYasuaki Yamamoto
    • Tatsuya KuraSeiichi KiyamaYasuaki Yamamoto
    • H01L31/05H01L31/18
    • H01L31/0392H01L31/03682H01L31/03762H01L31/03926H01L31/0463H01L31/0465Y02E10/546Y02E10/548
    • A method of fabricating a three-dimensionally shaped photovoltaic device involves first forming a photovoltaic element on a flexible substrate, preferably while it is flat, and then deforming the substrate to achieve the three-dimensional shape. Preferably a crystalline photovoltaic conversion layer is first formed on the flat substrate, then the layer is cut or divided while leaving the substrate uncut to form a plurality of separate adjacent photovoltaic elements on the substrate, and finally the substrate is deformed into the three-dimensional shape. The cutting can be carried out by laser irradiation. The deforming can be carried out by providing a shape memory member as the substrate, or bonding a shape memory member onto the substrate, and then restoring the shape memory member to its previously memorized three-dimensional shape. The adjacent photovoltaic elements can be electrically interconnected in series with each other by applying bond wires or an insulating film and then a conducting film in the cut regions between adjacent photovoltaic elements.
    • 制造三维形状的光伏器件的方法包括首先在柔性衬底上形成光电元件,优选地在平坦时形成光电元件,然后使衬底变形以实现三维形状。 优选地,在平坦基板上首先形成结晶光伏转换层,然后将层切割或分开,同时使基板未切割,以在基板上形成多个单独的相邻光电元件,最后将基板变形为三维 形状。 切割可以通过激光照射进行。 可以通过提供作为基板的形状记忆部件,或者将形状记忆部件接合到基板上,然后将形状记忆部件恢复到其先前记忆的立体形状来进行变形。 相邻的光电元件可以通过在相邻光电元件之间的切割区域中施加接合线或绝缘膜,然后导电膜而彼此串联电连接。
    • 10. 发明授权
    • Method of manufacturing photovoltaic device
    • 制造光伏器件的方法
    • US4755475A
    • 1988-07-05
    • US15691
    • 1987-02-17
    • Seiichi KiyamaYasuaki YamamotoHideki ImaiYutaka Hirono
    • Seiichi KiyamaYasuaki YamamotoHideki ImaiYutaka Hirono
    • H01L27/142H01L31/0224H01L31/18
    • H01L31/022425H01L31/046H01L31/0463Y02E10/50Y10S148/093Y10S148/153Y10S438/94
    • A method of manufacturing a photovoltaic device, in which a plurality of photoelectric conversion elements comprising a first electrode layer, a semiconductive layer and a second electrode layer are laminatedly arranged on an insulative surface of a substrate and said photoelectric conversion elements are electrically connected in series with each other, comprising a step of dividedly arranging the first electrode layer on the surface of the substrate, a step of coating the semiconductive layer on the surface of the substrate including the upper surface of the divided first electrode layer, a step of coating the second electrode layer on the semiconductive layer, and a step of dividing the semiconductive layer and/or the second electrode layer in order to define each element by irradiating energy-beams on the semiconductive layer and/or the second electrode layer. The formation of a low resistance layer in the semiconductive layer and a residual molten second electrode layer can be prevented by using energy-beams having an energy-distribution substantially uniform over the entire irradiated zone. In addition, short-circuits between the adjacent photoelectric conversion elements can be prevented.
    • 一种制造光电器件的方法,其中包括第一电极层,半导体层和第二电极层的多个光电转换元件被层叠地布置在基板的绝缘表面上,并且所述光电转换元件串联电连接 彼此包括在基板的表面上分割配置第一电极层的步骤,在包含分割的第一电极层的上表面的基板的表面上涂布半导体层的工序, 第二电极层,以及分隔半导电层和/或第二电极层以便通过在半导体层和/或第二电极层上照射能量束来限定每个元件的步骤。 通过使用在整个照射区域上具有基本均匀的能量分布的能量束,可以防止在半导体层中形成低电阻层和剩余熔融的第二电极层。 此外,可以防止相邻光电转换元件之间的短路。