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1. 发明申请

US20060252269A1 SILICON NITRIDE ETCHING METHODS 有权
标题翻译：硅氮蚀刻方法
公开(公告)号：US20060252269A1
公开(公告)日：2006-11-09
申请号：US10908252
申请日：2005-05-04
申请人： Siddhartha Panda , Richard Wise , Srikanteswara Murthy , Kamatchi Subramanian
发明人： Siddhartha Panda , Richard Wise , Srikanteswara Murthy , Kamatchi Subramanian
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/3185
摘要： Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g.
摘要翻译：公开了蚀刻氮化硅材料的方法，更具体地说，蚀刻对二氧化硅或硅化物有选择性的氮化物。所述方法包括将其上具有氮化硅的衬底暴露于包括至少一种氟代烃和不含碳的氟源如六氟化硫（SF 6 N 6）的等离子体。等离子体还可以包括氧（O 2 H 2），并且氟代烃可以包括以下中的至少一种：三氟甲烷（CHF 3 N 3），二氟甲烷（CH 2 N 2） > F 2）和氟化氟（CH 3 N 3 F）。在替代实施方案中，等离子体包括氢（H 2 H 2）和三氟化氮（NF 3 N）之一和四氟甲烷（CF 3 SO 3））和八氟环丁烷（C 4 H 8 F 8）。该方法优选使用低偏置电压进行，例如， <100 V.

2. 发明授权

US07288482B2 Silicon nitride etching methods 有权
标题翻译：氮化硅蚀刻方法
公开(公告)号：US07288482B2
公开(公告)日：2007-10-30
申请号：US10908252
申请日：2005-05-04
申请人： Siddhartha Panda , Richard Wise , Srikanteswara Dakshina Murthy , Kamatchi Subramanian
发明人： Siddhartha Panda , Richard Wise , Srikanteswara Dakshina Murthy , Kamatchi Subramanian
IPC分类号： H01L21/461
CPC分类号： H01L21/31116 , H01L21/3185
摘要： Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g.
摘要翻译：公开了蚀刻氮化硅材料的方法，更具体地说，蚀刻对二氧化硅或硅化物有选择性的氮化物。所述方法包括将其上具有氮化硅的衬底暴露于包括至少一种氟代烃和不含碳的氟源如六氟化硫（SF 6 N 6）的等离子体。等离子体还可以包括氧（O 2 H 2），并且氟代烃可以包括以下中的至少一种：三氟甲烷（CHF 3 N 3），二氟甲烷（CH 2 N 2） > F 2）和氟化氟（CH 3 N 3 F）。在替代实施方案中，等离子体包括氢（H 2 H 2）和三氟化氮（NF 3 N）之一和四氟甲烷（CF 3 SO 3））和八氟环丁烷（C 4 H 8 F 8）。该方法优选使用低偏置电压进行，例如， <100 V.

3. 发明申请

US20070056930A1 POLYSILICON ETCHING METHODS 审中-公开
标题翻译：多晶硅蚀刻方法
公开(公告)号：US20070056930A1
公开(公告)日：2007-03-15
申请号：US11162550
申请日：2005-09-14
申请人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
发明人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
IPC分类号： C03C25/68 , B44C1/22 , H01L21/461 , C23F1/00
CPC分类号： H01L21/32137
摘要： Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
摘要翻译：公开了采用包括全氟环戊烯（C 5 H 5 F 8 N）和三氟化氮（NF 3 3））的气流的多晶硅蚀刻方法。蚀刻方法实现了基本垂直的轮廓和更平滑的表面，并且可以实现低至3.0nm的3σ变化。

4. 发明申请

US20060037940A1 Apparatus and method for shielding a wafer from charged particles during plasma etching 失效
标题翻译：在等离子体蚀刻期间屏蔽晶片与带电粒子的装置和方法
公开(公告)号：US20060037940A1
公开(公告)日：2006-02-23
申请号：US11260375
申请日：2005-10-28
申请人： Hongwen Yan , Brian Ji , Siddhartha Panda , Richard Wise , Bomy Chen
发明人： Hongwen Yan , Brian Ji , Siddhartha Panda , Richard Wise , Bomy Chen
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
摘要翻译：一种等离子体蚀刻系统，其具有带有磁体的晶片卡盘，该磁体在晶片上施加磁场以将晶片免受带电粒子的影响。磁场与晶片平行，并且在晶片表面附近最强。磁场可以是直的或圆形的。在操作中，电子通过洛伦兹力从晶片偏转，晶片获得正电荷，离子被静电排斥偏转。允许中性物质通过磁场，并且它们与晶片碰撞。中性物质通常提供比带电粒子更多的各向同性和材料选择性蚀刻，因此目前的磁场倾向于增加蚀刻各向同性和材料选择性。此外，由于调味过程通常依赖于带电粒子的蚀刻，所以磁场可以保护晶片免受调节过程的调节过程，以便从室表面清洁不需要的膜。

5. 发明授权

US07438822B2 Apparatus and method for shielding a wafer from charged particles during plasma etching 失效
标题翻译：在等离子体蚀刻期间屏蔽晶片与带电粒子的装置和方法
公开(公告)号：US07438822B2
公开(公告)日：2008-10-21
申请号：US11260375
申请日：2005-10-28
申请人： Hongwen Yan , Brian L. Ji , Siddhartha Panda , Richard Wise , Bomy A. Chen
发明人： Hongwen Yan , Brian L. Ji , Siddhartha Panda , Richard Wise , Bomy A. Chen
IPC分类号： C23F1/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
摘要翻译：一种等离子体蚀刻系统，其具有带有磁体的晶片卡盘，该磁体在晶片上施加磁场以将晶片免受带电粒子的影响。磁场与晶片平行，并且在晶片表面附近最强。磁场可以是直的或圆形的。在操作中，电子通过洛伦兹力从晶片偏转，晶片获得正电荷，离子被静电排斥偏转。允许中性物质通过磁场，并且它们与晶片碰撞。中性物质通常提供比带电粒子更多的各向同性和材料选择性蚀刻，因此目前的磁场倾向于增加蚀刻各向同性和材料选择性。此外，由于调味过程通常依赖于带电粒子的蚀刻，所以磁场可以保护晶片免受调节过程的调节过程，以便从室表面清洁不需要的膜。

6. 发明授权

US07285775B2 Endpoint detection for the patterning of layered materials 有权
标题翻译：分层材料图案化的端点检测
公开(公告)号：US07285775B2
公开(公告)日：2007-10-23
申请号：US10904883
申请日：2004-12-02
申请人： Michael R. Sievers , Siddhartha Panda , Richard Wise
发明人： Michael R. Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

7. 发明申请

US20060154280A1 METHOD AND APPARATUS FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL/BIOCHEMICAL PROCESSES 审中-公开
标题翻译：化学/生物过程中精确温度循环的方法和装置
公开(公告)号：US20060154280A1
公开(公告)日：2006-07-13
申请号：US11307936
申请日：2006-02-28
申请人： Siddhartha Panda , Richard Wise
发明人： Siddhartha Panda , Richard Wise
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/686 , B01L7/5255 , B01L2300/1872 , G01N2035/00366 , G01N2035/00415 , C12Q2523/313
摘要： A method for implementing a temperature cycling operation for a biochemical sample to be reacted includes applying an infrared (IR) heating source to the sample at a first infrared wavelength selected so as to generate a first desired temperature for a first duration and produce a first desired reaction within the sample. Following the first desired reaction, applying the infrared (IR) heating source to the sample at a second infrared wavelength selected so as to generate a second desired temperature for a second duration and produce a second desired reaction within the sample.
摘要翻译：用于实施待反应的生物化学样品的温度循环操作的方法包括以选择的第一红外波长将红外（IR）加热源施加到样品，以便产生第一期望温度并产生第一期望值样品内的反应。在第一期望的反应之后，将红外（IR）加热源以选择的第二红外波长施加到样品，以便产生第二期望温度并在样品内产生第二期望的反应。

8. 发明申请

US20050244933A1 METHOD AND APPARATUS FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL/BIOCHEMICAL PROCESSES 审中-公开
标题翻译：化学/生物过程中精确温度循环的方法和装置
公开(公告)号：US20050244933A1
公开(公告)日：2005-11-03
申请号：US10709318
申请日：2004-04-28
申请人： Siddhartha Panda , Richard Wise
发明人： Siddhartha Panda , Richard Wise
IPC分类号： B01L7/00 , C12P19/34 , C12Q1/68 , G01N35/00
CPC分类号： C12Q1/686 , B01L7/5255 , B01L2300/1872 , G01N2035/00366 , G01N2035/00415 , C12Q2523/313
摘要： A method for implementing a temperature cycling operation for a biochemical sample to be reacted includes applying an infrared (IR) heating source to the sample at a first infrared wavelength selected so as to generate a first desired temperature for a first duration and produce a first desired reaction within the sample. Following the first desired reaction, applying the infrared (IR) heating source to the sample at a second infrared wavelength selected so as to generate a second desired temperature for a second duration and produce a second desired reaction within the sample.
摘要翻译：用于实施待反应的生物化学样品的温度循环操作的方法包括以选择的第一红外波长将红外（IR）加热源施加到样品，以便产生第一期望温度并产生第一期望值样品内的反应。在第一期望的反应之后，将红外（IR）加热源以选择的第二红外波长施加到样品，以便产生第二期望温度并在样品内产生第二期望的反应。

9. 发明授权

US06806200B2 Method of improving etch uniformity in deep silicon etching 失效
标题翻译：提高深硅蚀刻蚀刻均匀性的方法
公开(公告)号：US06806200B2
公开(公告)日：2004-10-19
申请号：US10291951
申请日：2002-11-08
申请人： David Dobuzinsky , Siddhartha Panda , Rolf Weis , Richard Wise
发明人： David Dobuzinsky , Siddhartha Panda , Rolf Weis , Richard Wise
IPC分类号： H01L21302
CPC分类号： H01L21/3065
摘要： A method is disclosed for improving etch uniformity in deep silicon etching of a monocrystalline silicon wafer. Such method includes forming a pad dielectric layer on a wafer including monocrystalline silicon, forming a silicon layer over the pad dielectric layer, and then applying a clamp to an edge of the wafer. The silicon layer is then removed except in areas protected by the clamp. Thereafter, a hardmask layer is applied and patterned on the wafer; and the wafer is then directionally etched with the patterned hardmask to etch trenches in the monocrystalline silicon. In such manner, a source of silicon (in the silicon layer) is provided at the wafer edge, such that the silicon loading is improved. In addition, the silicon layer at the wafer edge forms a blocking layer which prevents formation of black silicon.
摘要翻译：公开了一种用于改善单晶硅晶片的深硅蚀刻中的蚀刻均匀性的方法。这种方法包括在包括单晶硅的晶片上形成焊盘电介质层，在焊盘介电层上形成硅层，然后在晶片的边缘上施加夹具。然后除去在被夹具保护的区域之外除去硅层。此后，将硬掩模层施加和图案化在晶片上; 然后用图案化的硬掩模对晶片进行定向蚀刻，以蚀刻单晶硅中的沟槽。以这种方式，在晶片边缘处提供硅源（在硅层中），使得硅负载得到改善。此外，晶片边缘处的硅层形成防止形成黑色硅的阻挡层。

10. 发明授权

US07754615B2 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US07754615B2
公开(公告)日：2010-07-13
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/302
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

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