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    • 4. 发明授权
    • Rescheduling data input and output commands for bus synchronization by using digital latency shift detection
    • 通过使用数字等时移位检测重新安排数据输入和输出命令进行总线同步
    • US06636978B1
    • 2003-10-21
    • US09441798
    • 1999-11-17
    • Toshiaki KirihataL. Brian JiJohn Ross
    • Toshiaki KirihataL. Brian JiJohn Ross
    • H04L700
    • G11C7/1066G11C7/1051G11C7/1078G11C7/1093G11C7/222H03L7/0812
    • Digital latency shift communication problems from a driver chip to a receiver chip are overcome by scheduling a data output latency, a data input latency, a data output command, and/or a data output command, such that data outputted by the driver chip is received by the receiver chip at the correct time. A digital shift detection circuit detects the offset of the actual latencies from predetermined latencies. The offset of the latency is fed back to the scheduling circuit to override the predetermined latencies and/or command inputs that control the chip. The offset can be directly back-fed to the chip driver or chip receiver to compensate for digital shifts. Digital shift detection is achieved by measuring actual latencies with a manufacturing stand-alone tester, or with a built-in tester integral to the system. The digital shift detection predicts the conditions that create a digital shift by way of a mathematical model.
    • 通过调度数据输出延迟,数据输入延迟,数据输出命令和/或数据输出命令来克服从驱动器芯片到接收器芯片的数字等待时间移位通信问题,使得接收由驱动器芯片输出的数据 由接收芯片在正确的时间。 数字移位检测电路检测实际延迟与预定延迟的偏移。 延迟的偏移被反馈到调度电路以覆盖控制芯片的预定延迟和/或命令输入。 偏移可以直接回馈给芯片驱动器或芯片接收器,以补偿数字移位。 数字移位检测通过使用制造独立测试仪测量实际延迟,或内置测试仪与系统集成来实现。 数字移位检测预测了通过数学模型创建数字移位的条件。
    • 8. 发明授权
    • Intra-unit block addressing system for memory
    • 内存单元块寻址系统
    • US6038634A
    • 2000-03-14
    • US17017
    • 1998-02-02
    • L. Brian JiToshiaki Kirihata
    • L. Brian JiToshiaki Kirihata
    • G11C11/407G11C8/10G11C11/401G11C11/408G11C11/409G06F12/06
    • G11C8/10
    • A system is disclosed herein for stabilizing the current dissipation, voltage drop, and heating effects related to accessing blocks within first and second storage units of a double memory unit. The system includes a row selection unit located between the first and second storage units, which accesses storage locations of the first and second storage units according to first and second selection signals conducted from the outer extremities of the double memory unit to selected row locations. The blocks at corresponding distances from the outer extremities are numbered differently such that the sum of lengths of signal travel of the first and second selection signals to the numbered blocks remains relatively constant regardless of the block number which is selected for access.
    • 本文公开了一种用于稳定与双存储器单元的第一和第二存储单元内的块访问相关的电流耗散,电压降和加热效应的系统。 该系统包括位于第一和第二存储单元之间的行选择单元,其根据从双存储器单元的外端传输到所选行位置的第一和第二选择信号访问第一和第二存储单元的存储位置。 与外部相对应的距离的块以不同的方式编号,使得第一和第二选择信号到编号的块的信号行程的长度之和保持相对恒定,而不管选择用于访问的块号。
    • 9. 发明申请
    • Write operations for phase-change-material memory
    • 相变材料存储器的写操作
    • US20070025144A1
    • 2007-02-01
    • US11193878
    • 2005-07-29
    • Louis HsuBrian JiChung Lam
    • Louis HsuBrian JiChung Lam
    • G11C11/00
    • G11C13/0069G11C13/0004G11C2013/0076G11C2013/0078G11C2213/79
    • Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.
    • 公开了用于相变材料(PCM)存储器件的改进的写操作技术。 作为一个示例,在相变材料存储器单元中执行写入操作的方法,具有设置相位和与其相关联的复位阶段的存储器单元包括以下步骤。 监视与存储器单元相关联的字线。 当字线被激活时,启动对设置阶段的存储单元的写操作的执行。 然后可以在设定阶段的有效数据可用时继续对设定阶段的存储单元的写入操作。 当复位阶段的有效数据可用时,可以执行对复位阶段的存储单元的写操作。 公开了其它改进的PCM写操作技术。
    • 10. 发明申请
    • Non-volatile content addressable memory using phase-change-material memory elements
    • 使用相变材料存储元件的非易失性内容可寻址存储器
    • US20070002608A1
    • 2007-01-04
    • US11172473
    • 2005-06-30
    • Louis HsuBrian JiChung LamHon-Sum Wong
    • Louis HsuBrian JiChung LamHon-Sum Wong
    • G11C11/00
    • G11C13/0004G11C15/046
    • A non-volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first transistor, the first transistor having a gate connected to a word-line, a source connected to a true bit-read-write-search-line, and a drain connected to another end of the first phase change material element; a second phase change material element, the second phase change material element having one end connected to the match-line; and a second transistor, the second transistor having a gate connected to the word-line, a source connected to a complementary bit-read-write-search-line, and a drain connected to another end of the second phase change material element.
    • 非易失性内容可寻址存储单元包括:第一相变材料元件,所述第一相变材料元件具有连接到匹配线的一端; 第一晶体管,第一晶体管具有连接到字线的栅极,连接到真位读 - 写搜索线的源极和连接到第一相变材料元件的另一端的漏极; 第二相变材料元件,所述第二相变材料元件具有连接到所述匹配线的一端; 以及第二晶体管,所述第二晶体管具有连接到所述字线的栅极,连接到互补位读写搜索线的源极和连接到所述第二相变材料元件的另一端的漏极。