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1. 发明授权

US07754615B2 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US07754615B2
公开(公告)日：2010-07-13
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/302
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

2. 发明申请

US20080026488A1 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US20080026488A1
公开(公告)日：2008-01-31
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/66 , C23F1/00
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

3. 发明申请

US20070056930A1 POLYSILICON ETCHING METHODS 审中-公开
标题翻译：多晶硅蚀刻方法
公开(公告)号：US20070056930A1
公开(公告)日：2007-03-15
申请号：US11162550
申请日：2005-09-14
申请人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
发明人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
IPC分类号： C03C25/68 , B44C1/22 , H01L21/461 , C23F1/00
CPC分类号： H01L21/32137
摘要： Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
摘要翻译：公开了采用包括全氟环戊烯（C 5 H 5 F 8 N）和三氟化氮（NF 3 3））的气流的多晶硅蚀刻方法。蚀刻方法实现了基本垂直的轮廓和更平滑的表面，并且可以实现低至3.0nm的3σ变化。

4. 发明申请

US20060227321A1 NON-DESTRUCTIVE IN-SITU ELEMENTAL PROFILING 失效
标题翻译：非破坏性现场元素分析
公开(公告)号：US20060227321A1
公开(公告)日：2006-10-12
申请号：US10907591
申请日：2005-04-07
申请人： Siddhartha Panda , Michael Sievers , Richard Wise
发明人： Siddhartha Panda , Michael Sievers , Richard Wise
IPC分类号： G01J3/40
CPC分类号： G01N23/2273
摘要： A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.
摘要翻译：公开了一组层中的层的非破坏性原位元素分析方法和系统。在一个实施例中，多个光电子的第一次发射是从该层进行元素分析。基于发射确定层的元素分布。在另一个实施例中，也从该层接收多个光电子的第二次发射，并且通过比较所得到的信号来确定元素分布。然后可以“即时”控制改变层的方法以获得所需的材料组成。由于该方法可以原位使用并且是非破坏性的，所以可以减少周转时间并降低晶片消耗。本发明还记录了所有加工晶片的组成，因此，去除了常规统计抽样问题。

5. 发明申请

US20070068234A1 GAS FILLED REACTIVE ATOMIC FORCE MICROSCOPE PROBE 失效
标题翻译：气体填充反应原子力显微镜探针
公开(公告)号：US20070068234A1
公开(公告)日：2007-03-29
申请号：US11162958
申请日：2005-09-29
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

6. 发明申请

US20060118718A1 ENDPOINT DETECTION FOR THE PATTERNING OF LAYERED MATERIALS 有权
标题翻译：用于分层材料的端点检测
公开(公告)号：US20060118718A1
公开(公告)日：2006-06-08
申请号：US10904883
申请日：2004-12-02
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

7. 发明申请

US20060037940A1 Apparatus and method for shielding a wafer from charged particles during plasma etching 失效
标题翻译：在等离子体蚀刻期间屏蔽晶片与带电粒子的装置和方法
公开(公告)号：US20060037940A1
公开(公告)日：2006-02-23
申请号：US11260375
申请日：2005-10-28
申请人： Hongwen Yan , Brian Ji , Siddhartha Panda , Richard Wise , Bomy Chen
发明人： Hongwen Yan , Brian Ji , Siddhartha Panda , Richard Wise , Bomy Chen
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
摘要翻译：一种等离子体蚀刻系统，其具有带有磁体的晶片卡盘，该磁体在晶片上施加磁场以将晶片免受带电粒子的影响。磁场与晶片平行，并且在晶片表面附近最强。磁场可以是直的或圆形的。在操作中，电子通过洛伦兹力从晶片偏转，晶片获得正电荷，离子被静电排斥偏转。允许中性物质通过磁场，并且它们与晶片碰撞。中性物质通常提供比带电粒子更多的各向同性和材料选择性蚀刻，因此目前的磁场倾向于增加蚀刻各向同性和材料选择性。此外，由于调味过程通常依赖于带电粒子的蚀刻，所以磁场可以保护晶片免受调节过程的调节过程，以便从室表面清洁不需要的膜。

8. 发明授权

US07438822B2 Apparatus and method for shielding a wafer from charged particles during plasma etching 失效
标题翻译：在等离子体蚀刻期间屏蔽晶片与带电粒子的装置和方法
公开(公告)号：US07438822B2
公开(公告)日：2008-10-21
申请号：US11260375
申请日：2005-10-28
申请人： Hongwen Yan , Brian L. Ji , Siddhartha Panda , Richard Wise , Bomy A. Chen
发明人： Hongwen Yan , Brian L. Ji , Siddhartha Panda , Richard Wise , Bomy A. Chen
IPC分类号： C23F1/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
摘要翻译：一种等离子体蚀刻系统，其具有带有磁体的晶片卡盘，该磁体在晶片上施加磁场以将晶片免受带电粒子的影响。磁场与晶片平行，并且在晶片表面附近最强。磁场可以是直的或圆形的。在操作中，电子通过洛伦兹力从晶片偏转，晶片获得正电荷，离子被静电排斥偏转。允许中性物质通过磁场，并且它们与晶片碰撞。中性物质通常提供比带电粒子更多的各向同性和材料选择性蚀刻，因此目前的磁场倾向于增加蚀刻各向同性和材料选择性。此外，由于调味过程通常依赖于带电粒子的蚀刻，所以磁场可以保护晶片免受调节过程的调节过程，以便从室表面清洁不需要的膜。

9. 发明授权

US07285775B2 Endpoint detection for the patterning of layered materials 有权
标题翻译：分层材料图案化的端点检测
公开(公告)号：US07285775B2
公开(公告)日：2007-10-23
申请号：US10904883
申请日：2004-12-02
申请人： Michael R. Sievers , Siddhartha Panda , Richard Wise
发明人： Michael R. Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

10. 发明申请

US20060252269A1 SILICON NITRIDE ETCHING METHODS 有权
标题翻译：硅氮蚀刻方法
公开(公告)号：US20060252269A1
公开(公告)日：2006-11-09
申请号：US10908252
申请日：2005-05-04
申请人： Siddhartha Panda , Richard Wise , Srikanteswara Murthy , Kamatchi Subramanian
发明人： Siddhartha Panda , Richard Wise , Srikanteswara Murthy , Kamatchi Subramanian
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/3185
摘要： Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g.
摘要翻译：公开了蚀刻氮化硅材料的方法，更具体地说，蚀刻对二氧化硅或硅化物有选择性的氮化物。所述方法包括将其上具有氮化硅的衬底暴露于包括至少一种氟代烃和不含碳的氟源如六氟化硫（SF 6 N 6）的等离子体。等离子体还可以包括氧（O 2 H 2），并且氟代烃可以包括以下中的至少一种：三氟甲烷（CHF 3 N 3），二氟甲烷（CH 2 N 2） > F 2）和氟化氟（CH 3 N 3 F）。在替代实施方案中，等离子体包括氢（H 2 H 2）和三氟化氮（NF 3 N）之一和四氟甲烷（CF 3 SO 3））和八氟环丁烷（C 4 H 8 F 8）。该方法优选使用低偏置电压进行，例如， <100 V.

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