专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070056930A1 POLYSILICON ETCHING METHODS 审中-公开
标题翻译：多晶硅蚀刻方法
公开(公告)号：US20070056930A1
公开(公告)日：2007-03-15
申请号：US11162550
申请日：2005-09-14
申请人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
发明人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
IPC分类号： C03C25/68 , B44C1/22 , H01L21/461 , C23F1/00
CPC分类号： H01L21/32137
摘要： Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
摘要翻译：公开了采用包括全氟环戊烯（C 5 H 5 F 8 N）和三氟化氮（NF 3 3））的气流的多晶硅蚀刻方法。蚀刻方法实现了基本垂直的轮廓和更平滑的表面，并且可以实现低至3.0nm的3σ变化。

2. 发明授权

US07754615B2 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US07754615B2
公开(公告)日：2010-07-13
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/302
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

3. 发明申请

US20060227321A1 NON-DESTRUCTIVE IN-SITU ELEMENTAL PROFILING 失效
标题翻译：非破坏性现场元素分析
公开(公告)号：US20060227321A1
公开(公告)日：2006-10-12
申请号：US10907591
申请日：2005-04-07
申请人： Siddhartha Panda , Michael Sievers , Richard Wise
发明人： Siddhartha Panda , Michael Sievers , Richard Wise
IPC分类号： G01J3/40
CPC分类号： G01N23/2273
摘要： A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.
摘要翻译：公开了一组层中的层的非破坏性原位元素分析方法和系统。在一个实施例中，多个光电子的第一次发射是从该层进行元素分析。基于发射确定层的元素分布。在另一个实施例中，也从该层接收多个光电子的第二次发射，并且通过比较所得到的信号来确定元素分布。然后可以“即时”控制改变层的方法以获得所需的材料组成。由于该方法可以原位使用并且是非破坏性的，所以可以减少周转时间并降低晶片消耗。本发明还记录了所有加工晶片的组成，因此，去除了常规统计抽样问题。

4. 发明申请

US20080026488A1 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US20080026488A1
公开(公告)日：2008-01-31
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/66 , C23F1/00
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

5. 发明申请

US20070068234A1 GAS FILLED REACTIVE ATOMIC FORCE MICROSCOPE PROBE 失效
标题翻译：气体填充反应原子力显微镜探针
公开(公告)号：US20070068234A1
公开(公告)日：2007-03-29
申请号：US11162958
申请日：2005-09-29
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

6. 发明申请

US20060118718A1 ENDPOINT DETECTION FOR THE PATTERNING OF LAYERED MATERIALS 有权
标题翻译：用于分层材料的端点检测
公开(公告)号：US20060118718A1
公开(公告)日：2006-06-08
申请号：US10904883
申请日：2004-12-02
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

7. 发明申请

US20080093629A1 METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO 有权
标题翻译：具有夏普HALO的金属氧化物场效应晶体管
公开(公告)号：US20080093629A1
公开(公告)日：2008-04-24
申请号：US11955591
申请日：2007-12-13
申请人： Huajie Chen , Judson Holt , Rangarajan Jagannathan , Wesley Natzle , Michael Sievers , Richard Wise
发明人： Huajie Chen , Judson Holt , Rangarajan Jagannathan , Wesley Natzle , Michael Sievers , Richard Wise
IPC分类号： H01L29/778
CPC分类号： H01L29/66636 , H01L29/6659 , H01L29/7833
摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.
摘要翻译：公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。蚀刻半导体层以形成切割栅极介电层的凹部。低能量植入物形成晕轮。然后，执行COR预清洁，并且通过外延沉积填充凹部。外延可以被原位掺杂或随后植入以形成源/漏扩展。或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

8. 发明授权

US06444124B1 System and method for improved treatment of wastewater 失效
标题翻译：改善废水处理的系统和方法
公开(公告)号：US06444124B1
公开(公告)日：2002-09-03
申请号：US09648047
申请日：2000-08-25
申请人： Theodore Onyeche , Michael Sievers
发明人： Theodore Onyeche , Michael Sievers
IPC分类号： C02F328
CPC分类号： C02F11/00 , C02F11/04 , Y02E50/343
摘要： A method and system for treating sludge in a wastewater facility involving a novel concentration step optimises the energy balance and sludge solids mass reduction incurred from concentration and low pressure homogenization of the sludge.
摘要翻译：一种污水处理设备的污泥处理方法和系统，涉及新的浓缩步骤，优化了污泥浓缩和低压均质化所产生的能量平衡和污泥固体质量的降低。

9. 发明授权

US09556049B2 Method for treating sewage sludge and wastewater treatment plant 有权
标题翻译：污水处理厂污水处理方法
公开(公告)号：US09556049B2
公开(公告)日：2017-01-31
申请号：US14343087
申请日：2012-09-10
申请人： Wolfgang Ewert , Michael Sievers , Hinnerk Bormann
发明人： Wolfgang Ewert , Michael Sievers , Hinnerk Bormann
IPC分类号： C02F11/04 , C02F3/28 , C02F3/12 , C02F101/10
CPC分类号： C02F11/04 , C02F3/1215 , C02F3/1221 , C02F3/28 , C02F2101/105 , C02F2203/00 , Y02W10/15
摘要： The invention describes a method for treating sewage sludge through the treatment steps of hydrolyzing (2) the sewage sludge (1) and digesting (11) the hydrolyzed sewage sludge (10), which has undergone hydrolysis (2), for the anaerobic treatment of the sewage sludge (1), and through the step of separating phosphate from the at least partially treated sewage sludge (3). Phosphate is separated after the treatment step of hydrolyzing (2) and before the treatment step of digesting (11) the hydrolyzed sewage sludge (3), wherein the sewage sludge (10), without the phosphate portion separated in the phosphate separation step, is fed to the anaerobic treatment performed through digestion (11).
摘要翻译：本发明描述了一种通过水解（2）污水污泥（1）并消化（11）已经经过水解的水解污泥（10）（2）的处理步骤来处理污泥的方法，用于厌氧处理污水污泥（1），并通过从至少部分处理的污水污泥（3）中分离出磷酸盐的步骤。在水解（2）的处理步骤之后和在消化（11）水解污泥（3）的处理步骤之前分离磷酸盐，其中在磷酸盐分离步骤中没有分离磷酸盐部分的污水污泥（10）是喂养到通过消化进行的厌氧处理（11）。

10. 发明授权

US08641902B2 Method for wastewater treatment and wastewater treatment system 有权
标题翻译：污水处理和废水处理系统方法
公开(公告)号：US08641902B2
公开(公告)日：2014-02-04
申请号：US12921876
申请日：2009-03-06
申请人： Wolfgang Ewert , Michael Sievers , Hinnerk Bormann
发明人： Wolfgang Ewert , Michael Sievers , Hinnerk Bormann
IPC分类号： C02F3/00 , C02F1/00 , C02F9/00 , C02F3/12
CPC分类号： C02F11/04 , C02F3/12 , C02F3/1221 , C12M21/04 , C12M25/18 , C12M25/20 , C12M45/20 , Y02E50/343 , Y02W10/15
摘要： The invention relates to a method for wastewater treatment utilizing an anaerobic treatment of primary sludge (PS) in a septic tank (5), and a separate treatment of excess sludge (ÜS). The excess sludge (ÜS) is separated from the primary sludge (PS) before the anaerobic treatment, solubilized in a hydrolysis treatment and liquefied, and subjected to a separate anaerobic treatment independently of the primary sludge (PS).
摘要翻译：本发明涉及利用污泥池（5）中初级污泥（PS）的厌氧处理和多余污泥（ÜS）的单独处理的废水处理方法。在厌氧处理之前，将多余的污泥（ÜS）与初级污泥（PS）分离，溶解在水解处理中并液化，独立于初级污泥（PS）进行单独的厌氧处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式