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1. 发明授权

US5140550A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5140550A
公开(公告)日：1992-08-18
申请号：US591883
申请日：1990-10-02
申请人： Shuuichi Miyaoka , Masanori Odaka , Hiroshi Higuchi , Toshikazu Arai
发明人： Shuuichi Miyaoka , Masanori Odaka , Hiroshi Higuchi , Toshikazu Arai
IPC分类号： G11C8/10 , G11C8/14
CPC分类号： G11C8/10 , G11C8/14
摘要： A semiconductor memory device is provided which includes a plurality of memory arrays each including main word lines, sub word lines to which a plurality of memory cells are connected, and a decoder which selectively connects the sub word lines to the main word lines. The main word lines are relatively short, since they are isolated electrically between memory arrays, and their resistance can thus be relatively low. The main word lines are not directly connected with a plurality of memory cells, and this results in a smaller capacitance coupled to the main word lines than is customarily the case. Consequently, the semiconductor memory device can have an enhanced operating speed.
摘要翻译：提供一种半导体存储器件，其包括多个存储器阵列，每个存储器阵列包括主字线，连接有多个存储器单元的子字线，以及选择性地将子字线连接到主字线的解码器。主字线相对较短，因为它们在存储器阵列之间是电隔离的，因此它们的电阻可以相对较低。主字线不与多个存储单元直接连接，这导致与通常情况下的主字线相比较较小的电容。因此，半导体存储器件可以具有增强的操作速度。

2. 发明授权

US5068828A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5068828A
公开(公告)日：1991-11-26
申请号：US540480
申请日：1990-06-19
申请人： Shuuichi Miyaoka , Masanori Odaka , Toshikazu Arai , Hiroshi Higuchi
发明人： Shuuichi Miyaoka , Masanori Odaka , Toshikazu Arai , Hiroshi Higuchi
IPC分类号： G11C11/41 , G11C11/414 , G11C11/418
CPC分类号： G11C11/418
摘要： A semiconductor memory device having a plurality of memory arrays in which static memory cells are disposed in a lattice arrangement at intersections of word lines and complementary data lines. The load circuits thereof are characterized as having a varying impedance effected by the combination of a first pair of P-channel MOSFETs disposed between the complementary data lines and a first node supplied with a first supply voltage and kept normally in an ON-state, and a pair of transistors, such as a second pair of P-channel MOSFETs, similarly connected as the first pair of P-channel MOSFETs and which are turned off selectively in accordance with a control signal corresponding to a predetermined selection timing signal in a write-in mode. The semiconductor memory device has a plurality of switching circuits which are coupled between the plurality of complementary data lines and a pair of data read and write lines. Each such switching circuit has a first pair of N-channel MOSFETs for selectively coupling the data input circuit of the memory device to a corresponding pair of complementary data lines via the pair of write data lines during a data write-in mode and a pair of P-channel MOSFETs for selectively coupling the corresponding pair of complementary data lines to the data output circuit via the pair of read data lines during the data read-out mode thereof.

3. 发明授权

US4961164A Semiconductor memory device with dual selection circuitry including CMOS and bipolar transistors 失效
标题翻译：具有包括CMOS和双极晶体管的双选择电路的半导体存储器件
公开(公告)号：US4961164A
公开(公告)日：1990-10-02
申请号：US430907
申请日：1989-10-31
申请人： Shuuichi Miyaoka , Masanori Odaka , Hiroshi Higuchi , Toshikazu Arai
发明人： Shuuichi Miyaoka , Masanori Odaka , Hiroshi Higuchi , Toshikazu Arai
IPC分类号： G11C11/41 , G11C8/10 , G11C8/14 , G11C11/401 , G11C11/407
CPC分类号： G11C8/10 , G11C8/14
摘要： A semiconductor memory device is provided which includes a plurality of memory arrays each including main word lines, sub word lines to which a plurality of memory cells are connected, and a decoder which selectively connects the sub word lines to the main word lines. The main word lines are relatively short, since they are isolated electrically between memory arrays, and their resistance can thus be relatively low. The main word lines are not directly connected with a plurality of memory cells, and this results in a smaller capacitance coupled to the main word lines than is customarily the case. Consequently, the semiconductor memory device can have an enhanced operating speed.
摘要翻译：提供一种半导体存储器件，其包括多个存储器阵列，每个存储器阵列包括主字线，连接有多个存储器单元的子字线，以及选择性地将子字线连接到主字线的解码器。主字线相对较短，因为它们在存储器阵列之间是电隔离的，因此它们的电阻可以相对较低。主字线不与多个存储单元直接连接，这导致与通常情况下的主字线相比较较小的电容。因此，半导体存储器件可以具有增强的操作速度。

4. 发明授权

US4935898A Semiconductor memory unit 失效
标题翻译：半导体存储单元
公开(公告)号：US4935898A
公开(公告)日：1990-06-19
申请号：US228021
申请日：1988-08-04
申请人： Shuuichi Miyaoka , Masanori Odaka , Toshikazu Arai , Hiroshi Higuchi
发明人： Shuuichi Miyaoka , Masanori Odaka , Toshikazu Arai , Hiroshi Higuchi
IPC分类号： G11C11/41 , G11C11/414 , G11C11/418
CPC分类号： G11C11/418
摘要： A semiconductor memory device having a plurality of memory arrays composed of mutually orthogonal row word lines and complementary column data lines, and static memory cells disposed in a lattice arrangement at the intersections of such word lines and complementary data lines; variable impedance load circuits having first P-channel MOSFETs disposed between the complementary data lines and a first supply voltage and kept normally in an on-state, and also having second P-channel MOSFETs connected in parallel with the first P-channel MOSFETs and cut off selectively in accordance with predetermined selection timing signals in a write mode; a plurality of signal generator circuits provided correspondingly to the memory arrays for forming the selection timing signals in accordance with write control signals and array selection signals, and then feeding the timing signals to the corresponding variable impedance load circuits; and a plurality of signal relay circuits provided correspondingly to a predetermined number of the signal generator circuits in such a manner that each signal relay circuit is disposed substantially at an intermediate position between the corresponding signal generator circuits, and transmitting to the corresponding signal generator circuits the write control signals obtained from the timing generator circuit TG. In this configuration, the signal transmitting paths between the timing generator circuit and the individual signal relay circuits are rendered mutually equivalent in length.
摘要翻译：一种半导体存储器件，具有由相互正交的行字线和互补列数据线构成的多个存储器阵列，以及以这种字线和互补数据线的交叉处的格子排列设置的静态存储单元; 可变阻抗负载电路具有设置在互补数据线之间的第一P沟道MOSFET和第一电源电压并且保持正常导通状态，并且还具有与第一P沟道MOSFET并联连接的第二P沟道MOSFET并切断根据写入模式中的预定选择定时信号选择性地断开; 多个信号发生器电路，与存储器阵列相对应地设置，用于根据写入控制信号和阵列选择信号形成选择定时信号，然后将定时信号馈送到相应的可变阻抗负载电路; 以及多个信号中继电路，其以预定数量的信号发生器电路相应地设置，使得每个信号中继电路基本上设置在相应的信号发生器电路之间的中间位置，并且向相应的信号发生器电路发送从定时发生器电路TG获得的写入控制信号。在这种配置中，定时发生器电路和各个信号继电器电路之间的信号传输路径的长度相互等同。

5. 发明授权

US4977338A High speed bipolar-MOS logic circuit including a series coupled arrangement of a bipolar transistor and a logic block having a MOSFET 失效
标题翻译：包括双极晶体管和具有MOSFET的逻辑块的串联耦合布置的高速双极MOS逻辑电路
公开(公告)号：US4977338A
公开(公告)日：1990-12-11
申请号：US336425
申请日：1989-04-11
申请人： Shuuichi Miyaoka , Masanori Odaka , Katsumi Ogiue
发明人： Shuuichi Miyaoka , Masanori Odaka , Katsumi Ogiue
IPC分类号： H01L27/06 , H01L21/8249 , H03K17/567 , H03K19/00 , H03K19/08 , H03K19/0944
CPC分类号： H03K19/0008 , H03K19/09448
摘要： A high-speed bipolar MOS logic circuit is provided which includes a load resistance coupled between a first power supply voltage terminal and an output terminal and a bipolar transistor having a collector coupled to said output terminal and a base for receiving a predetermined voltage or an input signal a logic block is also provided including one or more MOSFETs having a source-drain path coupled in series between the emitter of said bipolar transistor and a second power supply voltage terminal.
摘要翻译：提供了一种高速双极MOS逻辑电路，其包括耦合在第一电源电压端子和输出端子之间的负载电阻和耦合到所述输出端子的集电极和用于接收预定电压或输入的基极的双极晶体管信号还包括一个逻辑块，包括一个或多个MOSFET，它们具有串联连接在所述双极晶体管的发射极和第二电源电压端之间的源极 - 漏极通路。

6. 发明授权

US4899314A Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US4899314A
公开(公告)日：1990-02-06
申请号：US184661
申请日：1988-04-21
申请人： Kazuhisa Miyamoto , Shuuichi Miyaoka , Masanori Odaka
发明人： Kazuhisa Miyamoto , Shuuichi Miyaoka , Masanori Odaka
IPC分类号： G11C11/414 , G11C5/14
CPC分类号： G11C5/147
摘要： A semiconductor integrated circuit is provided having first and second level generate circuits producing different levels and first and second emitter follower circuits respectively connected thereto. A level generated by one of the first and second level generate circuits is selectively supplied to either one of the first and second emitter follower circuits. This enables the first and second emitter follower circuits to supply the respective circuits formed in a semiconductor substrate with stable reference voltages.
摘要翻译：提供了具有产生不同电平的第一和第二电平发生电路以及分别与其连接的第一和第二射极跟随器电路的半导体集成电路。由第一和第二电平发生电路之一产生的电平被选择性地提供给第一和第二射极跟随器电路中的任一个。这使得第一和第二射极跟随器电路能够在半导体衬底中形成的各个电路提供稳定的参考电压。

7. 发明授权

US5220187A Semiconductor integrated circuit with bipolar transistors and MOSFETs 失效
标题翻译：具有双极晶体管和MOSFET的半导体集成电路
公开(公告)号：US5220187A
公开(公告)日：1993-06-15
申请号：US917907
申请日：1992-07-21
申请人： Shuuichi Miyaoka , Masanori Odaka , Katsumi Ogiue
发明人： Shuuichi Miyaoka , Masanori Odaka , Katsumi Ogiue
IPC分类号： H01L21/82 , H01L27/118 , H03K19/0944 , H03K19/173
CPC分类号： H03K19/09448 , H01L27/11896
摘要： A logic circuit to be formed in a gate array is selected depending upon the value of the output load capacitance thereof, from among a CMOS circuit, a first Bi-CMOS circuit including an output bipolar transistor whose emitter size is set at a predetermined value, and a second Bi-CMOS circuit including an output bipolar transistor whose emitter size is larger than the emitter size of the output bipolar transistor of the first Bi-CMOS circuit. That is, the logic circuit is brought into a circuit form whose output load capacitance can be charged and discharged fastest. As a result, the logic circuit constructed in the gate array by adopting such a design technique has its operating speed raised. An improved structure is also provided for reducing wiring lengths by arranging bipolar transistors in adjacent basic cells to have mirror symmetry with one another. Further, particular gate width relationships are provided between MOSFETs within basic cells for reducing propagation delay and the required occupation area.

8. 发明授权

US5291445A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5291445A
公开(公告)日：1994-03-01
申请号：US589515
申请日：1990-09-28
申请人： Shuuichi Miyaoka , Kazuhisa Miyamoto , Masanori Odaka , Hideo Sawamoto , Michiaki Nakayama , Mitsugu Kusunoki , Masato Ikeda , Takashi Ogata , Kouji Kobayashi , Masao Kato , Tsutomu Sumimoto
发明人： Shuuichi Miyaoka , Kazuhisa Miyamoto , Masanori Odaka , Hideo Sawamoto , Michiaki Nakayama , Mitsugu Kusunoki , Masato Ikeda , Takashi Ogata , Kouji Kobayashi , Masao Kato , Tsutomu Sumimoto
IPC分类号： H03K19/0175 , H03K19/0944 , G11C7/00
CPC分类号： H03K19/017527 , H03K19/017518 , H03K19/09448
摘要： A semiconductor integrated circuit device such as a memory device with logic function comprises a plurality of RAM macrocells and gate arrays. The RAM macrocells are constituted by bipolar CMOS RAMs having a total memory capacity of at least 100 kilobits, and the gate arrays contain at least 4000 gates. The logic circuits in the memory device with logic function or the like are constructed by selectively combining CMOS, bipolar CMOS or ECL gate circuits depending on the output load capacity, transmission characteristic requirement, power dissipation and required layout area. The level of signals at various circuits is set to the ECL level or MOS level depending on the local circuit configuration and other factors. The memory device further incorporates sequence control circuits required to be installed downstream of buffer storages of computers.
摘要翻译：诸如具有逻辑功能的存储器件的半导体集成电路器件包括多个RAM宏单元和门阵列。 RAM宏单元由具有至少100千位的总存储器容量的双极性CMOS RAM构成，并且门阵列包含至少4000个栅极。具有逻辑功能等的存储器件中的逻辑电路通过根据输出负载能力，传输特性要求，功耗和所需布局面积选择性地组合CMOS，双极CMOS或ECL门电路而构成。各种电路的信号电平根据本地电路配置和其他因素设置为ECL电平或MOS电平。存储器装置还包括需要安装在计算机的缓冲存储器下游的顺序控制电路。

9. 发明授权

US5384738A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5384738A
公开(公告)日：1995-01-24
申请号：US189636
申请日：1994-02-01
申请人： Shuuichi Miyaoka , Kazuhisa Miyamoto , Masanori Odaka , Hideo Sawamoto , Michiaki Nakayama , Mitsugu Kusunoki , Masato Ikeda , Takashi Ogata , Kouji Kobayashi , Masao Kato , Tsutomu Sumimoto
发明人： Shuuichi Miyaoka , Kazuhisa Miyamoto , Masanori Odaka , Hideo Sawamoto , Michiaki Nakayama , Mitsugu Kusunoki , Masato Ikeda , Takashi Ogata , Kouji Kobayashi , Masao Kato , Tsutomu Sumimoto
IPC分类号： H03K19/0175 , H03K19/0944 , G11C7/00
CPC分类号： H03K19/017527 , H03K19/017518 , H03K19/09448
摘要： A semiconductor integrated circuit device such as a memory device with logic function comprises a plurality of RAM macrocells and gate arrays. The RAM macrocells are constituted by bipolar CMOS RAMs having a total memory capacity of at least 100 kilobits, and the gate arrays contain at least 4000 gates. The logic circuits in the memory device with logic function or the like are constructed by selectively combining CMOS, bipolar CMOS or ECL gate circuits depending on the output load capacity, transmission characteristic requirement, power dissipation and required layout area. The level of signals at various circuits is set to the ECL level or MOS level depending on the local circuit configuration and other factors. The memory device further incorporates sequence control circuits required to be installed downstream of buffer storages of computers.
摘要翻译：诸如具有逻辑功能的存储器件的半导体集成电路器件包括多个RAM宏单元和门阵列。 RAM宏单元由具有至少100千位的总存储器容量的双极性CMOS RAM构成，并且门阵列包含至少4000个栅极。具有逻辑功能等的存储器件中的逻辑电路通过根据输出负载能力，传输特性要求，功耗和所需布局面积选择性地组合CMOS，双极CMOS或ECL门电路而构成。各种电路的信号电平根据本地电路配置和其他因素设置为ECL电平或MOS电平。存储器装置还包括需要安装在计算机的缓冲存储器下游的顺序控制电路。

10. 发明授权

US5047986A Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US5047986A
公开(公告)日：1991-09-10
申请号：US472637
申请日：1990-01-30
申请人： Kazuhisa Miyamoto , Shuuichi Miyaoka , Masanori Odaka
发明人： Kazuhisa Miyamoto , Shuuichi Miyaoka , Masanori Odaka
IPC分类号： G11C11/414 , G11C5/14
CPC分类号： G11C5/147
摘要： A semiconductor integrated circuit is provided having first and second level generate circuits producing different levels and first and second emitter follower circuits respectively connected thereto. A level generated by one of the first and second level generate circuits is selectively supplied to either one of the first and second emitter follower circuits. This enables the first and second emitter follower circuits to supply the respective circuits formed in a semiconductor substrate with stable reference voltages.

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