专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06191492B1 Electronic device including a densified region 失效
标题翻译：包括致密区域的电子设备
公开(公告)号：US06191492B1
公开(公告)日：2001-02-20
申请号：US08161859
申请日：1993-12-06
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L2328
CPC分类号： H01L24/48 , H01L23/3135 , H01L23/49586 , H01L24/45 , H01L2224/05624 , H01L2224/29339 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/8592 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01045 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/05042 , H01L2924/00 , H01L2924/00012
摘要： An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制件，其中所述有机树脂的表面设置有硬化防水或碳质膜或其中有机树脂表面的孔被填充在惰性气体如氩气中，因为用惰性气体等离子体处理树脂表面，从而防止杂质通过孔进入有机树脂。

2. 发明授权

US06285164B1 Means for detecting the integrated value of current flow, a means for detecting the value of current flow and a battery pack employing those means 失效
标题翻译：用于检测电流的积分值的装置，用于检测电流值的装置和使用这些装置的电池组
公开(公告)号：US06285164B1
公开(公告)日：2001-09-04
申请号：US09709431
申请日：2000-11-13
申请人： Masaru Noda , Takashi Takeuchi , Shinji Tanaka , Mitsunori Tsuchiya , Takeshi Yamaguchi
发明人： Masaru Noda , Takashi Takeuchi , Shinji Tanaka , Mitsunori Tsuchiya , Takeshi Yamaguchi
IPC分类号： H02J700
CPC分类号： G01R31/361 , G01R31/3648
摘要： An apparatus for detecting an integrated value of current flow. The apparatus includes an integrator having an integration capacitor, to which a current sensor voltage is inputted, for outputting an output voltage corresponding to an integrated value of the current sensor voltage, and a resetting circuit for clearing integration electric charges accumulated in the integration capacitor to reset the integrator when the output voltage has reached an upper threshold value or a lower threshold value. The apparatus also includes a counter for counting the number of resets of the integrator in an upper direction or in a lower direction, and a connection-polarity inverting circuit for inverting a polarity of inputting of the current sensor voltage to the integrator, a polarity of connecting of the integration capacitor to the integrator and a counting direction of the counter, alternatively, at a regular time interval and synchronously. An integrated value of current flow is obtained on the basis of a count value of the counter.
摘要翻译：一种用于检测电流的积分值的装置。该装置包括具有积分电容器的积分器，输入电流传感器电压，用于输出对应于当前传感器电压的积分值的输出电压，以及复位电路，用于将积分电容器中累积的积分电荷清除为当输出电压达到上限阈值或下限阈值时，复位积分器。该装置还包括用于对积分器在上方向或下方的复位次数进行计数的计数器和用于将输入当前传感器电压的极性反转到积分器的连接极性反转电路，极性积分电容器与积分器的连接以及计数器的计数方向，或者以规则的时间间隔并且同步地进行。基于计数器的计数值获得电流的积分值。

3. 发明授权

US5041201A Plasma processing method and apparatus 失效
公开(公告)号：US5041201A
公开(公告)日：1991-08-20
申请号：US403821
申请日：1989-09-07
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Shigenori Hayashi , Naoki Hirose , Noriya Ishida , Mari Sasaki , Atsushi Kawano
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Shigenori Hayashi , Naoki Hirose , Noriya Ishida , Mari Sasaki , Atsushi Kawano
IPC分类号： C23C16/26 , C23C16/517
CPC分类号： C23C16/517 , C23C16/26
摘要： Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.

4. 发明授权

US5283087A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5283087A
公开(公告)日：1994-02-01
申请号：US863543
申请日：1992-04-06
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34 , B05D3/06 , C23C16/00 , C25F3/00
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
摘要翻译：对等离子体处理及其装置进行说明。多个基板设置在一对电极之间，施加高频电力以产生辉光放电并诱导等离子体。等离子体中的衬底被施加交变电场。由于交变电场，基板受到溅射作用。

5. 发明授权

US5256483A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5256483A
公开(公告)日：1993-10-26
申请号：US606185
申请日：1990-10-31
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34 , B32B9/00
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321 , Y10S428/906 , Y10T428/30
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
摘要翻译：对等离子体处理及其装置进行说明。多个基板设置在一对电极之间，施加高频电力以产生辉光放电并诱导等离子体。等离子体中的衬底被施加交变电场。由于交变电场，基板受到溅射作用。

6. 发明授权

US5147822A Plasma processing method for improving a package of a semiconductor device 失效
标题翻译：一种用于改进半导体器件封装的等离子体处理方法
公开(公告)号：US5147822A
公开(公告)日：1992-09-15
申请号：US667231
申请日：1991-02-25
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31 , H01L23/495
CPC分类号： H01L23/49586 , H01L21/56 , H01L23/29 , H01L23/3135 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L24/45 , H01L24/48 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01029 , H01L2924/01079 , H01L2924/14 , H01L2924/181
摘要： An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制品，其中所述有机树脂的表面设置有硬化的耐水或含碳的电影。

7. 发明授权

US5079031A Apparatus and method for forming thin films 失效
标题翻译：用于形成薄膜的装置和方法
公开(公告)号：US5079031A
公开(公告)日：1992-01-07
申请号：US324669
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/517 , H01J37/32082 , H01J37/32568 , H01J2237/3321
摘要： An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.

8. 发明授权

US5007374A Apparatus for forming thin films in quantity 失效
标题翻译：用于形成薄膜的装置
公开(公告)号：US5007374A
公开(公告)日：1991-04-16
申请号：US324668
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Mitsunori Tsuchiya , Kenji Itoh , Takashi Inushima , Atsushi Kawano
发明人： Shunpei Yamazaki , Shinji Imatou , Mitsunori Tsuchiya , Kenji Itoh , Takashi Inushima , Atsushi Kawano
IPC分类号： H01L21/205 , C23C16/26 , C23C16/517 , H01L21/31
CPC分类号： C23C16/517 , C23C16/26
摘要： An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.
摘要翻译：适用于大规模生产硬度高的碳涂层的设备。该装置使用两种类型的能量输入。将第一能量输入到设置在反应室中的一对电极，在该电极之间限定了沉积空间。待涂覆的多个基板安装在被提供有第二电能的多个基板保持器上。保持器平行于电场布置以防止电场的干扰。

9. 发明授权

US4971667A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US4971667A
公开(公告)日：1990-11-20
申请号：US303240
申请日：1989-02-03
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

10. 发明授权

US06756670B1 Electronic device and its manufacturing method 失效
标题翻译：电子器件及其制造方法
公开(公告)号：US06756670B1
公开(公告)日：2004-06-29
申请号：US09698055
申请日：2000-10-30
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L2306
CPC分类号： H01L23/49586 , H01L21/56 , H01L23/29 , H01L23/3135 , H01L24/45 , H01L24/48 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/8592 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/181 , H01L2924/00014 , H01L2924/05442 , H01L2924/05042 , H01L2924/00012
摘要： An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制件，其中所述有机树脂的表面设置有硬化防水或碳质膜或其中有机树脂表面的孔被填充在惰性气体如氩气中，因为用惰性气体等离子体处理树脂表面，从而防止杂质通过孔进入有机树脂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式