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1. 发明授权

US06821899B2 System, method and apparatus for improved local dual-damascene planarization 失效
标题翻译：用于改进局部双镶嵌平面化的系统，方法和装置
公开(公告)号：US06821899B2
公开(公告)日：2004-11-23
申请号：US10390520
申请日：2003-03-14
申请人： Shrikant P. Lohokare , Andrew D. Bailey, III , David Hemker , Joel M. Cook
发明人： Shrikant P. Lohokare , Andrew D. Bailey, III , David Hemker , Joel M. Cook
IPC分类号： H01L21311
CPC分类号： H01L21/32135 , H01L21/32115 , H01L21/32136 , H01L21/7684
摘要： A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed on the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
摘要翻译：用于平坦化图案化半导体衬底的系统和方法包括接收图案化的半导体衬底。图案化半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。覆盖层部分包括局部不均匀性。在覆盖层部分上形成附加层。附加层和覆盖层部分被平坦化。平坦化工艺基本上完全除去附加层。

2. 发明授权

US06939796B2 System, method and apparatus for improved global dual-damascene planarization 有权
标题翻译：用于改进全局双镶嵌平面化的系统，方法和装置
公开(公告)号：US06939796B2
公开(公告)日：2005-09-06
申请号：US10390117
申请日：2003-03-14
申请人： Shrikant P. Lohokare , Andrew D. Bailey, III , David Hemker , Joel M. Cook
发明人： Shrikant P. Lohokare , Andrew D. Bailey, III , David Hemker , Joel M. Cook
IPC分类号： B44C1/22 , H01L20060101 , H01L21/302 , H01L21/304 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/4763 , H01L21/768 , H01L33/00
CPC分类号： H01L21/7684 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L21/32136
摘要： A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion having a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion. The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
摘要翻译：用于平坦化图案化半导体衬底的系统和方法包括接收图案化的半导体衬底。图案化半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。覆盖层部分具有局部不均匀性。去除覆盖层部分的大部分以平坦化上覆层部分。映射基本上局部平坦化的覆盖层部分以确定全局不均匀性。基本上局部平坦化的覆盖层部分被蚀刻以基本上去除全局不均匀性。

3. 发明申请

US20060011583A1 Materials and gas chemistries for processing systems 审中-公开
标题翻译：材料和气体化学处理系统
公开(公告)号：US20060011583A1
公开(公告)日：2006-01-19
申请号：US11230689
申请日：2005-09-19
申请人： Andrew Bailey , Alan Schoepp , David Hemker , Mark Wilcoxson
发明人： Andrew Bailey , Alan Schoepp , David Hemker , Mark Wilcoxson
IPC分类号： G01L21/30 , B44C1/22 , G01R31/00 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32467 , B05D1/62 , H01J37/32495
摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.
摘要翻译：公开了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。等离子体处理室没有单独的等离子体产生室。等离子体处理室具有上端和下端。等离子体处理室包括与输送到等离子体处理室中的反应性气体化学物质基本上不反应的材料。此外，公开了流入等离子体处理室的反应气体。

4. 发明授权

US06929531B2 System and method for metal residue detection and mapping within a multi-step sequence 失效
标题翻译：多步序列中金属残留检测和映射的系统和方法
公开(公告)号：US06929531B2
公开(公告)日：2005-08-16
申请号：US10251033
申请日：2002-09-19
申请人： Yehiel Gotkis , Aleksander Owczarz , David Hemker , Nicolas Bright , Rodney Kistler
发明人： Yehiel Gotkis , Aleksander Owczarz , David Hemker , Nicolas Bright , Rodney Kistler
IPC分类号： B24B37/04 , B24B49/02 , B24B49/10 , H01L21/321 , H01L21/66 , B24B49/00
CPC分类号： B24B37/042 , B24B49/02 , B24B49/10 , H01L21/3212 , H01L22/00
摘要： A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.
摘要翻译：在多步衬底工艺中测量衬底上的金属层的系统和方法包括改变衬底上的金属层，例如形成金属层或去除金属层的至少一部分。至少一个传感器定位在离基板表面预定距离处。映射衬底的表面以确定衬底表面上的金属层的均匀性。

5. 发明申请

US20050125202A1 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection 有权
标题翻译：用于过程状态监测和端点检测的斜率到阈值转换的方法和装置
公开(公告)号：US20050125202A1
公开(公告)日：2005-06-09
申请号：US11030374
申请日：2005-01-05
申请人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas Bright
发明人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas Bright
IPC分类号： G05B23/02 , H01L21/66 , H03F1/26 , G06F15/00 , H04B15/00
CPC分类号： G05B23/0254 , H01L22/26
摘要： A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.
摘要翻译：提供了一种将基于斜率的检测任务转换为基于阈值的检测任务的方法。该方法通过为对应于被监视的进程的值的一组点定义近似方程来启动。然后，预测在被监视的处理的当前点的期望值。接下来，计算被监视处理当前点的测量值与对应的期望值之间的差值。然后，对连续点监测差异，以检测测量值和预期值之间的偏差值。接下来，基于偏差值的检测来识别被监视处理的转变点。还提供了一种处理系统，其被配置为提供用于基于斜率的转换的实时数据和计算机可读介质。

6. 发明申请

US20050000653A1 Method and apparatus of arrayed sensors for metrological control 有权
公开(公告)号：US20050000653A1
公开(公告)日：2005-01-06
申请号：US10881094
申请日：2004-06-29
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
IPC分类号： C23F1/00 , G01B7/06 , G01R27/00 , H01L21/302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

7. 发明申请

US20080171292A1 Methods for Providing a Confined Liquid for Immersion Lithography 失效
标题翻译：提供浸没液相色谱液体的方法
公开(公告)号：US20080171292A1
公开(公告)日：2008-07-17
申请号：US12055219
申请日：2008-03-25
申请人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
发明人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在衬底的表面上产生弯月面并且通过弯月面施加光刻光以实现衬底表面的光刻处理。

8. 发明授权

US07367345B1 Apparatus and method for providing a confined liquid for immersion lithography 失效
标题翻译：用于提供用于浸没光刻的限制液体的装置和方法
公开(公告)号：US07367345B1
公开(公告)日：2008-05-06
申请号：US10834548
申请日：2004-04-28
申请人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
发明人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
IPC分类号： B08B3/10 , B08B7/04 , G03C5/00
CPC分类号： G03F7/70341 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在衬底的表面上产生弯月面并且通过弯月面施加光刻光以实现衬底表面的光刻处理。

9. 发明申请

US20080057182A1 METHOD FOR GAP FILL IN CONTROLLED AMBIENT SYSTEM 审中-公开
标题翻译：控制环境系统中填隙的方法
公开(公告)号：US20080057182A1
公开(公告)日：2008-03-06
申请号：US11611758
申请日：2006-12-15
申请人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin Mooring , John Parks , William Thie , Fritz Redeker , Arthur Howald , Alan Schoepp , David Hemker
发明人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin Mooring , John Parks , William Thie , Fritz Redeker , Arthur Howald , Alan Schoepp , David Hemker
IPC分类号： B05D5/12 , B05D1/36
CPC分类号： H01L21/67207 , H01L21/76843 , H01L21/76877
摘要： A method for filling a trench of a substrate in a controlled environment is provided. The method initiates with etching a trench in the substrate in a first chamber of a cluster tool. A barrier layer configured to prevent electromigration is deposited over an exposed surface of the trench in a second chamber of the cluster tool and the trench is filled with a gap fill material deposited directly onto the barrier layer in the cluster tool. A semiconductor device fabricated by the method is also provided.
摘要翻译：提供了一种用于在受控环境中填充衬底的沟槽的方法。该方法通过在簇工具的第一室中蚀刻衬底中的沟槽来启动。构造成防止电迁移的阻挡层沉积在簇工具的第二腔中的沟槽的暴露表面上，并且沟槽填充有直接沉积在簇工具中的阻挡层上的间隙填充材料。还提供了通过该方法制造的半导体器件。

10. 发明授权

US07309618B2 Method and apparatus for real time metal film thickness measurement 有权
标题翻译：用于实时金属膜厚度测量的方法和装置
公开(公告)号：US07309618B2
公开(公告)日：2007-12-18
申请号：US10463525
申请日：2003-06-18
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： H01L21/00
CPC分类号： B24B37/013 , B24B1/005 , B24B49/105 , B24B57/02 , H01L21/67253
摘要： A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.
摘要翻译：提供半导体处理系统。半导体处理系统包括：第一传感器，被配置为隔离和测量具有设置在基板上的膜的晶片的膜厚度信号部分。第二传感器被配置为在处理期间，即在实际工艺条件下和实时地在原位检测膜厚依赖信号。控制器，被配置为从第一传感器接收信号和来自第二传感器的信号。控制器能够根据来自第一传感器的信号表示的数据确定校准系数。控制器能够将校准系数应用于与第二传感器相关联的数据，其中校准系数基本上消除了从衬底引入与膜厚度相关的信号的不准确性。还提供了用于校准涡流传感器的方法。

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