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1. 发明申请

US20060011583A1 Materials and gas chemistries for processing systems 审中-公开
标题翻译：材料和气体化学处理系统
公开(公告)号：US20060011583A1
公开(公告)日：2006-01-19
申请号：US11230689
申请日：2005-09-19
申请人： Andrew Bailey , Alan Schoepp , David Hemker , Mark Wilcoxson
发明人： Andrew Bailey , Alan Schoepp , David Hemker , Mark Wilcoxson
IPC分类号： G01L21/30 , B44C1/22 , G01R31/00 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32467 , B05D1/62 , H01J37/32495
摘要： A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.
摘要翻译：公开了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。等离子体处理室没有单独的等离子体产生室。等离子体处理室具有上端和下端。等离子体处理室包括与输送到等离子体处理室中的反应性气体化学物质基本上不反应的材料。此外，公开了流入等离子体处理室的反应气体。

2. 发明授权

US06377437B1 High temperature electrostatic chuck 有权
标题翻译：高温静电吸盘
公开(公告)号：US06377437B1
公开(公告)日：2002-04-23
申请号：US09469287
申请日：1999-12-22
申请人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
发明人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
IPC分类号： H02N1300
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of noble metals such as Pt which require etching at high temperatures to volatilize low volatility etch products.
摘要翻译：一种具有在卡盘体和传热体之间的伸缩接头的热静电吸盘。膨胀接头提供气密密封，适应卡盘体和传热体之间的不同的热应力，和/或控制从卡盘体传导到传热体的热量。在卡盘体和传热体的间隔开的表面之间的一个增压室填充有诸如氦气的传热气体，其通过诸如卡盘体中的提升销孔的气体通道，用于支撑在卡盘上的基板的背面冷却。集气室中的传热气体还将热量从卡盘体传导到传热体中。卡盘体可以由具有所需电气和/或热性质的材料制成，例如金属材料或陶瓷材料。卡盘可用于各种半导体工艺，例如等离子体蚀刻，化学气相沉积，溅射，离子注入，灰化等。在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻的贵金属如Pt，其需要在高温下进行蚀刻以挥发低挥发性蚀刻产物。

3. 发明申请

US20080216864A1 METHOD AND SYSTEM FOR DISTRIBUTING GAS FOR A BEVEL EDGE ETCHER 有权
标题翻译：一种用于分布水边蚀刻器的气体的方法和系统
公开(公告)号：US20080216864A1
公开(公告)日：2008-09-11
申请号：US11697695
申请日：2007-04-06
申请人： Greg Sexton , Andrew Bailey , Alan Schoepp
发明人： Greg Sexton , Andrew Bailey , Alan Schoepp
IPC分类号： B08B6/00 , C25F3/30
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32009 , H01J37/3244 , H01J37/32706 , Y10S134/902
摘要： A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.
摘要翻译：提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。该室包括通过处理室的顶表面限定的气体进料。气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。还提供了一种用于清洁基板的斜边缘的方法。

4. 发明授权

US06567258B2 High temperature electrostatic chuck 有权
公开(公告)号：US06567258B2
公开(公告)日：2003-05-20
申请号：US10075601
申请日：2002-02-15
申请人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
发明人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
IPC分类号： H02N1300
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of noble metals such as Pt which require etching at high temperatures to volatilize low volatility etch products.

5. 发明授权

US07542134B2 System, method and apparatus for in-situ substrate inspection 有权
标题翻译：用于原位底物检查的系统，方法和装置
公开(公告)号：US07542134B2
公开(公告)日：2009-06-02
申请号：US12131909
申请日：2008-06-02
申请人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
发明人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N2021/8822
摘要： A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.
摘要翻译：用于检查基板的系统包括照相机和光源。相机朝向视场。该视场包括该基板的第一表面的至少第一部分。光源相对于衬底的第一表面以第一角度β朝向视场定向。也包括检查基板的方法。

6. 发明申请

US20080273195A1 SYSTEM, METHOD AND APPARATUS FOR IN-SITU SUBSTRATE INSPECTION 有权
标题翻译：用于现场基板检查的系统，方法和装置
公开(公告)号：US20080273195A1
公开(公告)日：2008-11-06
申请号：US12131909
申请日：2008-06-02
申请人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
发明人： Aleksander Owczarz , Jaroslaw W. Winniczek , Luai Nasser , Alan Schoepp , Fred C. Redeker , Erik Edelberg
IPC分类号： G01N21/00 , H01L21/66
CPC分类号： G01N21/9501 , G01N2021/8822
摘要： A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.
摘要翻译：用于检查基板的系统包括照相机和光源。相机朝向视场。该视场包括该基板的第一表面的至少第一部分。光源相对于衬底的第一表面以第一角度β朝向视场定向。也包括检查基板的方法。

7. 发明申请

US20080057182A1 METHOD FOR GAP FILL IN CONTROLLED AMBIENT SYSTEM 审中-公开
标题翻译：控制环境系统中填隙的方法
公开(公告)号：US20080057182A1
公开(公告)日：2008-03-06
申请号：US11611758
申请日：2006-12-15
申请人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin Mooring , John Parks , William Thie , Fritz Redeker , Arthur Howald , Alan Schoepp , David Hemker
发明人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin Mooring , John Parks , William Thie , Fritz Redeker , Arthur Howald , Alan Schoepp , David Hemker
IPC分类号： B05D5/12 , B05D1/36
CPC分类号： H01L21/67207 , H01L21/76843 , H01L21/76877
摘要： A method for filling a trench of a substrate in a controlled environment is provided. The method initiates with etching a trench in the substrate in a first chamber of a cluster tool. A barrier layer configured to prevent electromigration is deposited over an exposed surface of the trench in a second chamber of the cluster tool and the trench is filled with a gap fill material deposited directly onto the barrier layer in the cluster tool. A semiconductor device fabricated by the method is also provided.
摘要翻译：提供了一种用于在受控环境中填充衬底的沟槽的方法。该方法通过在簇工具的第一室中蚀刻衬底中的沟槽来启动。构造成防止电迁移的阻挡层沉积在簇工具的第二腔中的沟槽的暴露表面上，并且沟槽填充有直接沉积在簇工具中的阻挡层上的间隙填充材料。还提供了通过该方法制造的半导体器件。

8. 发明申请

US20060139450A1 System, method and apparatus for in-situ substrate inspection 失效
公开(公告)号：US20060139450A1
公开(公告)日：2006-06-29
申请号：US11016022
申请日：2004-12-17
申请人： Aleksander Owczarz , Jaroslaw Winniczek , Luai Nasser , Alan Schoepp , Fred Redeker , Erik Edelberg
发明人： Aleksander Owczarz , Jaroslaw Winniczek , Luai Nasser , Alan Schoepp , Fred Redeker , Erik Edelberg
IPC分类号： H04N7/18 , H04N9/47
CPC分类号： G01N21/9501 , G01N2021/8822
摘要： A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.

9. 发明申请

US20090000044A1 APPARATUSES AND METHODS FOR CLEANING A SUBSTRATE 失效
标题翻译：用于清洁基底的装置和方法
公开(公告)号：US20090000044A1
公开(公告)日：2009-01-01
申请号：US12210198
申请日：2008-09-14
申请人： John M. de Larios , Aleksander Owczarz , Alan Schoepp , Fritz Redeker
发明人： John M. de Larios , Aleksander Owczarz , Alan Schoepp , Fritz Redeker
IPC分类号： B08B3/08 , B08B1/02 , B08B1/04
CPC分类号： B08B3/003 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.
摘要翻译：用于处理衬底的装置包括在一定长度上延伸的刷子外壳。电刷外壳被配置为设置在基板的表面上方，并且具有被配置为设置在基板附近的开放区域。开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。还描述了用于清洁衬底的衬底清洁系统和方法。

10. 发明授权

US07441299B2 Apparatuses and methods for cleaning a substrate 失效
标题翻译：用于清洁基底的装置和方法
公开(公告)号：US07441299B2
公开(公告)日：2008-10-28
申请号：US10816337
申请日：2004-03-31
申请人： John M. de Larios , Aleksander Owczarz , Alan Schoepp , Fritz Redeker
发明人： John M. de Larios , Aleksander Owczarz , Alan Schoepp , Fritz Redeker
IPC分类号： B08B11/02
CPC分类号： B08B3/003 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.
摘要翻译：用于处理衬底的装置包括在一定长度上延伸的刷子外壳。电刷外壳被配置为设置在基板的表面上，并且具有被配置为设置在基板附近的开放区域。开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。还描述了用于清洁衬底的衬底清洁系统和方法。

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