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    • 6. 发明授权
    • Ignition timing control system for internal combustion engines
    • 内燃机点火正时控制系统
    • US4694799A
    • 1987-09-22
    • US787750
    • 1985-10-15
    • Shizuo YagiYoshiaki HirosawaMakoto KawaiIsao Fujii
    • Shizuo YagiYoshiaki HirosawaMakoto KawaiIsao Fujii
    • F02P5/152F02P5/145F02P5/153F02P5/14
    • F02D35/023F02P5/1455F02D35/028Y02T10/46
    • An ignition timing control system for an internal combustion engine includes a crank angle detector for producing a first pulse signal indicative of a reference crank angle position of the crankshaft and a second pulse signal indicative of a crank angle position that changes constantly with rotation of the crankshaft, an ideal crank angle detector for producing an output signal based on the first and second pulse signals and indicative of an ideal crank angle position at which pressure internal of the engine cylinder attains a peak value, pressure sensing means for producing an output signal indicative of the peak pressure value, a phase difference detector for producing an output signal indicative of the phase difference between the ideal crank angle position signal and the peak pressure value signal, first ignition timing control means for producing an output signal indicative of optimum ignition timing which is in accordance with the phase difference output signal, and second ignition timing control means for controlling ignition timing to a fixed value during actuation of the engine starter.
    • 一种用于内燃机的点火正时控制系统包括:一个曲柄角检测器,用于产生指示曲轴的基准曲柄角位置的第一脉冲信号;以及第二脉冲信号,该第二脉冲信号表示随曲轴转动而不断变化的曲柄角位置 一个理想的曲柄角检测器,用于基于第一和第二脉冲信号产生输出信号,并指示发动机气缸内部压力达到峰值的理想曲柄角位置;压力检测装置,用于产生指示 峰值压力值,用于产生指示理想曲柄角位置信号和峰值压力值信号之间的相位差的输出信号的相位差检测器,用于产生表示最佳点火正时的输出信号的第一点火正时控制装置, 根据相位差输出信号和第二点火 在定时控制装置中,用于在发动机起动器的致动期间将点火正时控制到固定值。
    • 8. 发明授权
    • Method for manufacturing SOI wafer
    • 制造SOI晶圆的方法
    • US08268700B2
    • 2012-09-18
    • US12153160
    • 2008-05-14
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • H01L21/30
    • H01L21/76254
    • There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
    • 公开了一种制造SOI晶片的方法,该方法至少包括:将氢离子,稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中 从施主晶片的表面,从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理,把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层,由此降低其膜厚以提供SOI层,并在600〜1000℃下进行热处理。 并且基于化学机械抛光将SOI层的表面抛光10至50nm。 可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。