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1. 发明授权

US08829397B2 Corrosion-resistant multilayer ceramic member 有权
标题翻译：耐腐蚀多层陶瓷构件
公开(公告)号：US08829397B2
公开(公告)日：2014-09-09
申请号：US12285108
申请日：2008-09-29
申请人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
发明人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
IPC分类号： H05B3/68 , C23C16/00 , H01L21/683 , H02N13/00 , H01L21/687 , H05B3/14 , H01L21/67
CPC分类号： H01L21/6831 , H01L21/67103 , H01L21/6833 , H01L21/68757 , H02N13/00 , H05B3/143
摘要： The present invention relates to a corrosion-resistant multilayer ceramic member consisting at least of: a ceramic support substrate; an electrode layer formed on the ceramic support substrate; a power-supply member connected to the electrode layer; an insulating protection layer formed on the ceramic support substrate to cover the electrode layer; and a ceramic protection substrate of which at least a part is provided on the insulating protection layer. Thereby, there is provided a long-life corrosion-resistant multilayer ceramic member excellent in corrosion resistance even when exposed to a corrosive gas.
摘要翻译：本发明涉及一种耐腐蚀多层陶瓷构件，其至少包括：陶瓷支撑基板; 形成在所述陶瓷支撑基板上的电极层; 连接到所述电极层的电源构件; 形成在所述陶瓷支撑基板上以覆盖所述电极层的绝缘保护层; 以及陶瓷保护基板，其至少一部分设置在绝缘保护层上。由此，即使在暴露于腐蚀性气体的情况下，也能够提供耐腐蚀性优异的长寿命耐腐蚀性的多层陶瓷部件。

2. 发明授权

US08703580B2 Silicon on insulator (SOI) wafer and process for producing same 有权
标题翻译：绝缘体上硅（SOI）晶片及其制造方法
公开(公告)号：US08703580B2
公开(公告)日：2014-04-22
申请号：US12163764
申请日：2008-06-27
申请人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
发明人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78603
摘要： In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.
摘要翻译：在制造绝缘体上硅（SOI）晶片的制造方法中，通过从单晶硅晶片的表面注入氢离子或稀有气体离子，在晶片内形成离子注入层，离子注入层使用等离子体和/或臭氧处理单晶硅晶片和/或透明绝缘基板的表面，通过使单晶硅晶片的离子注入表面接近透明绝缘基板的表面，在室温下彼此接触，将处理后的表面作为接合表面，并且通过对单晶硅晶片进行机械剥离而对透明绝缘基板形成冲击，形成SOI层层。

3. 发明申请

US20130003036A1 PHOTO MASK UNIT COMPRISING A PHOTOMASK AND A PELLICLE AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：包含光电照相机和胶囊的照片遮罩单元及其制造方法
公开(公告)号：US20130003036A1
公开(公告)日：2013-01-03
申请号：US13608716
申请日：2012-09-10
申请人： Shoji Akiyama , Yoshihiro Kubota
发明人： Shoji Akiyama , Yoshihiro Kubota
IPC分类号： G03B27/58 , B23P11/00
CPC分类号： G03F1/24 , G03F1/62 , G03F1/64 , Y10T29/49826
摘要： It is an object of the present invention to provide a photomask unit suitable for forming a microscopic pattern of 32 nm or smaller on a photoresist film using the EUV exposure technique and being able to reliably prevent the flatness of a photomask from being lowered. The photomask unit 1 according to the present invention includes a pellicle membrane 6, a pellicle frame 7 onto one surface of which a region of the pellicle membrane 6 in the vicinity of side portions of the pellicle membrane 6 is fixed, a photomask 2 and a stage 3 onto one surface of which the photomask 2 and the pellicle frame 7 are fixed, and the pellicle frame 7 is fixed onto the stage 3 at a region outside of a region of the stage 3 onto which the photomask 2 is fixed.
摘要翻译：本发明的目的是提供一种适用于使用EUV曝光技术在光致抗蚀剂膜上形成32nm或更小的微观图案并能够可靠地防止光掩模的平坦度降低的光掩模单元。根据本发明的光掩模单元1包括防护薄膜6，防护薄膜框架7，其一个表面上防护薄膜6的侧部附近的防护薄膜6的区域被固定，光掩模2和阶段3在其一个表面上固定光掩模2和防护薄膜组件框架7，并且防护膜框架7在固定有光掩模2的载物台3的区域外部的区域固定到载物台3上。

4. 发明申请

US20120319275A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
公开(公告)号：US20120319275A1
公开(公告)日：2012-12-20
申请号：US13596736
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/498
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

5. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

6. 外观设计

USD662195S1 Water heater 有权
公开(公告)号：USD662195S1
公开(公告)日：2012-06-19
申请号：US29394426
申请日：2011-06-16
申请人： Hiromasa Watanabe , Yoshihiro Kubota , Shikoh Morita
设计人： Hiromasa Watanabe , Yoshihiro Kubota , Shikoh Morita

7. 外观设计

USD653320S1 Water heater for space heating 有权
标题翻译：热水器空间加热
公开(公告)号：USD653320S1
公开(公告)日：2012-01-31
申请号：US29394416
申请日：2011-06-16
申请人： Hiromasa Watanabe , Yoshihiro Kubota , Ko Isozaki
设计人： Hiromasa Watanabe , Yoshihiro Kubota , Ko Isozaki

8. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

9. 发明申请

US20110104871A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
标题翻译：制造粘结基板的方法
公开(公告)号：US20110104871A1
公开(公告)日：2011-05-05
申请号：US12934788
申请日：2009-04-10
申请人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
发明人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.
摘要翻译：提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

10. 发明授权

US07879175B2 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US07879175B2
公开(公告)日：2011-02-01
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

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