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1. 发明授权

US07700940B2 Gallium nitride-based compound semiconductor device 有权
标题翻译：氮化镓系化合物半导体器件
公开(公告)号：US07700940B2
公开(公告)日：2010-04-20
申请号：US10521544
申请日：2003-07-01
申请人： Shiro Sakai , Tomoya Sugahara
发明人： Shiro Sakai , Tomoya Sugahara
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： An LED emitting light of wavelength mainly 375 nm or below. The LED includes a GaN layer (16), an n-clad layer (20), an AlInGaN buffer layer (22), a light emitting layer (24), a p-clad layer (26), a p-electrode (30), and an n-electrode (32) arranged on a substrate (10). The light emitting layer (24) has a multi-layer quantum well structure (MQW) in which an InGaN well layer and an AlInGaN barrier layer are superimposed. The quantum well structure increases the effective band gap of the InGaN well layer and reduces the light emitting wavelength. Moreover, by using the AlInGaN buffer layer (22) as the underlying layer of the light emitting layer (24), it is possible to effectively inject electrons into the light emitting layer (24), thereby increasing the light emitting efficiency.
摘要翻译：发射波长主要为375nm或以下的LED的LED。 LED包括GaN层（16），n覆盖层（20），AlInGaN缓冲层（22），发光层（24），p覆盖层（26），p电极（30））和布置在基板（10）上的n电极（32）。发光层（24）具有叠层InGaN阱层和AlInGaN阻挡层的多层量子阱结构（MQW）。量子阱结构增加了InGaN阱层的有效带隙并降低了发光波长。此外，通过使用AlInGaN缓冲层（22）作为发光层（24）的下层，可以有效地将电子注入到发光层（24）中，从而提高发光效率。

2. 发明授权

US07372066B2 Gallium nitride compound semiconductor device and manufacturing method 有权
标题翻译：氮化镓化合物半导体器件及其制造方法
公开(公告)号：US07372066B2
公开(公告)日：2008-05-13
申请号：US10516703
申请日：2003-06-04
申请人： Hisao Sato , Tomoya Sugahara , Shinji Kitazawa , Yoshihiko Muramoto , Shiro Sakai
发明人： Hisao Sato , Tomoya Sugahara , Shinji Kitazawa , Yoshihiko Muramoto , Shiro Sakai
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06
摘要： A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.
摘要翻译：使用GaN的发光元件。在形成的衬底（10）上形成SiN缓冲层（12），GaN缓冲层（14），未掺杂的GaN层（16），Si掺杂的n-GaN层（18），SLS层（20 ），形成p型电极（30）和n电极（32）的未掺杂GaN层（22），MQW发光层（24），SLS层（26）和p-GaN层（28）。 MQW发光层（24）具有其中InGaN阱层和AlGaN势垒层交替的结构。 SLS层（20和26）的Al含量比大于5％且小于24％。 MQW发光层（24）中的阱层的In含量比大于3％且小于20％。阻挡层的Al含量比大于1％且小于30％。通过将各层的含有率和膜厚度调整为所需值，波长小于400nm的光发光效率提高。

3. 发明申请

US20060175600A1 Gallium nitride compound semiconductor device and manufacturing method 有权
标题翻译：氮化镓化合物半导体器件及其制造方法
公开(公告)号：US20060175600A1
公开(公告)日：2006-08-10
申请号：US10516703
申请日：2003-06-04
申请人： Hisao Sato , Tomoya Sugahara , Shinji Kitazawa , Yoshihiko Muramoto , Shiro Sakai
发明人： Hisao Sato , Tomoya Sugahara , Shinji Kitazawa , Yoshihiko Muramoto , Shiro Sakai
IPC分类号： H01L31/109 , H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06
摘要： A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.
摘要翻译：使用GaN的发光元件。在形成的衬底（10）上形成SiN缓冲层（12），GaN缓冲层（14），未掺杂的GaN层（16），Si掺杂的n-GaN层（18），SLS层（20 ），形成p型电极（30）和n电极（32）的未掺杂GaN层（22），MQW发光层（24），SLS层（26）和p-GaN层（28）。 MQW发光层（24）具有其中InGaN阱层和AlGaN势垒层交替的结构。 SLS层（20和26）的Al含量比大于5％且小于24％。 MQW发光层（24）中的阱层的In含量比大于3％且小于20％。阻挡层的Al含量比大于1％且小于30％。通过将各层的含有率和膜厚度调整为所需值，波长小于400nm的光发光效率提高。

4. 发明申请

US20050236642A1 Gallium nitride-based compound semiconductor device 有权
标题翻译：氮化镓系化合物半导体器件
公开(公告)号：US20050236642A1
公开(公告)日：2005-10-27
申请号：US10521544
申请日：2003-07-01
申请人： Shiro Sakai , Tomoya Sugahara
发明人： Shiro Sakai , Tomoya Sugahara
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： An LED emitting light of wavelength mainly 375 nm or below. The LED includes a GaN layer (16), an n-clad layer (20), an AlInGaN buffer layer (22), a light emitting layer (24), a p-clad layer (26), a p-electrode (30), and an n-electrode (32) arranged on a substrate (10). The light emitting layer (24) has a multi-layer quantum well structure (MQW) in which an InGaN well layer and an AlInGaN barrier layer are superimposed. The quantum well structure increases the effective band gap of the InGaN well layer and reduces the light emitting wavelength. Moreover, by using the AlInGaN buffer layer (22) as the underlying layer of the light emitting layer (24), it is possible to effectively inject electrons into the light emitting layer (24), thereby increasing the light emitting efficiency.
摘要翻译：发射波长主要为375nm或以下的LED的LED。 LED包括GaN层（16），n覆盖层（20），AlInGaN缓冲层（22），发光层（24），p覆盖层（26），p电极（30））和布置在基板（10）上的n电极（32）。发光层（24）具有叠层InGaN阱层和AlInGaN阻挡层的多层量子阱结构（MQW）。量子阱结构增加了InGaN阱层的有效带隙并降低了发光波长。此外，通过使用AlInGaN缓冲层（22）作为发光层（24）的下层，可以有效地将电子注入到发光层（24）中，从而提高发光效率。

5. 发明授权

US09012924B2 Spectrum detector including a photodector having a concavo-convex patten 有权
标题翻译：光谱检测器，包括具有凹凸图案的光电探测器
公开(公告)号：US09012924B2
公开(公告)日：2015-04-21
申请号：US13321082
申请日：2009-08-17
申请人： Shiro Sakai , Won Chul Seo , Dae Won Kim
发明人： Shiro Sakai , Won Chul Seo , Dae Won Kim
IPC分类号： H01L29/26 , G01J3/36 , B82Y20/00 , G01J3/02 , G01J3/12
CPC分类号： G01J3/0235 , B82Y20/00 , G01J3/02 , G01J3/0205 , G01J3/0259 , G01J3/36 , G01J3/42 , G01J2003/1213
摘要： Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system.
摘要翻译：提供了能够小型化并且不需要复杂的光轴对准的光谱检测器。本发明的光谱检测器包括：基板; 形成在所述基板上并包括具有多个凸部的半导体的光电探测器; 以及波长检测电路，用于从入射到光电检测器上的光检测透过多个凸部的光的波长。根据本发明，可以提供一种小型光谱检测器，其可以容易地检测包括在未知波长的光中的峰值波长分布，而不需要使用诸如光栅或棱镜的光学设备，从而不需要复合光学系统的光轴对准。

6. 发明授权

US09006084B2 Method of preparing semiconductor layer including cavities 有权
标题翻译：制备包括空腔的半导体层的方法
公开(公告)号：US09006084B2
公开(公告)日：2015-04-14
申请号：US13507210
申请日：2012-06-13
申请人： Shiro Sakai
发明人： Shiro Sakai
IPC分类号： H01L21/46 , H01L21/02 , C30B25/02 , C30B29/40 , H01L29/20 , H01L33/00
CPC分类号： H01L21/0254 , C30B25/02 , C30B29/406 , H01L29/2003 , H01L33/0075
摘要： A method of fabricating a semiconductor substrate, includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.
摘要翻译：一种制造半导体衬底的方法，包括在衬底上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，使用以去除所述金属材料层和所述第一半导体层的一部分，并且在去除所述金属材料层的所述第一半导体层内形成空腔。

7. 发明申请

US20130313577A1 LAMINATE SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：层压基板及其制造方法
公开(公告)号：US20130313577A1
公开(公告)日：2013-11-28
申请号：US13985201
申请日：2011-05-17
申请人： Shiro Sakai
发明人： Shiro Sakai
IPC分类号： H01L29/267 , H01L21/02 , H01L29/16
CPC分类号： H01L29/267 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/0254 , H01L21/0262 , H01L29/1608 , H01L33/007 , H01L33/12 , H01L33/32
摘要： Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AlN layer including the AlN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer.
摘要翻译：本发明的实施方案提供一种结晶碳化铝层，其上形成有结晶碳化铝层的层压基板及其制造方法。层压基板具有包括GaN晶体的GaN层和包括AlC晶体的AlC层。此外，具有包含AlN晶体的AlN层和包含AlC晶体的AlC层的层压基板的制造方法包括供给含碳气体和含铝气体以生长AlC层。

8. 发明授权

US08319947B2 Operating valve, exposure apparatus, and device manufacturing method 有权
标题翻译：操作阀，曝光装置和装置制造方法
公开(公告)号：US08319947B2
公开(公告)日：2012-11-27
申请号：US12574333
申请日：2009-10-06
申请人： Hiroyuki Eki , Shiro Sakai
发明人： Hiroyuki Eki , Shiro Sakai
IPC分类号： B23B31/30 , B65G1/133 , F16K1/00 , G03B27/58 , G03B27/60 , G03B27/62
CPC分类号： F16K51/02 , G03F7/707 , G03F7/70841 , Y10T29/49 , Y10T279/11
摘要： An operating valve of the present invention is a differential pressure operating valve 100 for performing a vacuum suction of a substrate, the operating valve comprises a body 4 having an opening which is provided at an exhaust side for exhausting an air from an inside to an outside and is opposed to a suction side for sucking the air from the outside to the inside, a valve 8, and a spring 9 whose one end is connected with one of the suction side and the exhaust side of the body 4 and the other end is connected with the valve 8. The spring 9 is configured to stretch or compress in accordance with a differential pressure between the suction side and the exhaust side, and the valve 8 is provided with at least one hole.
摘要翻译：本发明的操作阀是用于对基板进行真空抽吸的压差操作阀100，操作阀包括一个主体4，该主体4具有设置在排气侧的开口，用于从内部向外部排出空气并且与吸入侧相对，用于从外部向内部吸入空气，阀8和弹簧9，其一端与主体4的吸入侧和排气侧中的一个连接，另一端为与阀8连接。弹簧9构造成根据吸力侧和排气侧之间的压差拉伸或压缩，并且阀8设置有至少一个孔。

9. 发明授权

US08189635B2 Laser diode having nano patterns and method of fabricating the same 有权
标题翻译：具有纳米图案的激光二极管及其制造方法
公开(公告)号：US08189635B2
公开(公告)日：2012-05-29
申请号：US12768073
申请日：2010-04-27
申请人： Shiro Sakai
发明人： Shiro Sakai
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/1017 , H01S5/105 , H01S5/12 , H01S5/34333 , Y10S977/72
摘要： A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.
摘要翻译：具有纳米图案的激光二极管设置在基板上。第一导电型覆盖层设置在基板上，第二导电型覆盖层设置在第一导电型覆盖层上。在第一导电型覆盖层和第二导电型覆盖层之间插入有源层。柱状纳米图案布置在第二导电型覆盖层的表面，以形成诸如分布反馈激光二极管的激光二极管。

10. 发明申请

US20120021546A1 Method of fabricating semiconductor substrate and method of fabricating light emitting device 有权
公开(公告)号：US20120021546A1
公开(公告)日：2012-01-26
申请号：US13137124
申请日：2011-07-21
申请人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
发明人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

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