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1. 发明授权

US08541806B2 Light emitting diode having electrode pads 有权
标题翻译：具有电极焊盘的发光二极管
公开(公告)号：US08541806B2
公开(公告)日：2013-09-24
申请号：US12963921
申请日：2010-12-09
申请人： Kyoung Wan Kim , Jeong Hee Yang , Yeo Jin Yoon
发明人： Kyoung Wan Kim , Jeong Hee Yang , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L33/44
摘要： The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明涉及一种发光二极管，包括基板，布置在基板上的第一导电型半导体层，布置在第一导电型半导体层上的第二导电型半导体层，设置在第一导电类型半导体层之间的有源层和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第一导电类型半导体层上的第二电极焊盘以及设置在第一导电类型半导体层和第二导电类型半导体层之间的绝缘层所述绝缘层将所述第二电极焊盘与所述第一导电型半导体层绝缘。至少一个上延伸部可以电连接到第二电极焊盘，所述至少一个上延伸部电连接到第二导电类型半导体层。

2. 发明授权

US08436369B2 Light emitting diode having electrode pads 有权
公开(公告)号：US08436369B2
公开(公告)日：2013-05-07
申请号：US13617810
申请日：2012-09-14
申请人： Won Cheol Seo , Dae Sung Kal , Kyung Hee Ye , Kyoung Wan Kim , Yeo Jin Yoon
发明人： Won Cheol Seo , Dae Sung Kal , Kyung Hee Ye , Kyoung Wan Kim , Yeo Jin Yoon
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

3. 发明申请

US20120049223A1 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 有权
标题翻译：发光二极管具有提高的光效
公开(公告)号：US20120049223A1
公开(公告)日：2012-03-01
申请号：US13209765
申请日：2011-08-15
申请人： Jeong Hee YANG , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Duk Il SUH , Keum Ju LEE , Jin Woong LEE , Da Yeon JEONG
发明人： Jeong Hee YANG , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Duk Il SUH , Keum Ju LEE , Jin Woong LEE , Da Yeon JEONG
IPC分类号： H01L33/58 , H01L33/42
CPC分类号： H01L33/385 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0091
摘要： Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.
摘要翻译：本发明的示例性实施例涉及发光二极管。根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

4. 发明申请

US20120025244A1 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR 有权
标题翻译：具有分布式BRAGG反射器的发光二极管
公开(公告)号：US20120025244A1
公开(公告)日：2012-02-02
申请号：US13100879
申请日：2011-05-04
申请人： Duk Il SUH , Jae Moo KIM , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE
发明人： Duk Il SUH , Jae Moo KIM , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE
IPC分类号： H01L33/58
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
摘要翻译：本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层，以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。第一分布布拉格反射器具有层叠结构，其具有交替层叠的SiO 2层和Nb 2 O 5层。

5. 发明授权

US09024345B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US09024345B2
公开(公告)日：2015-05-05
申请号：US13818267
申请日：2011-04-05
申请人： Ye Seul Kim , Da Yeon Jeong , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh
发明人： Ye Seul Kim , Da Yeon Jeong , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh
IPC分类号： H01L33/00 , H01L21/00 , H01L33/40 , H01L33/60 , H01L33/20 , H01L33/38
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/60
摘要： Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
摘要翻译：公开了一种发光二极管（LED），其包括发光层叠结构和形成为在发光层叠结构上具有图案的电极结构。 LED的电极结构包括在发光层叠结构上沿着图案设置的反射体簇，以及形成为完全覆盖反射体的焊盘材料层。

6. 发明授权

US08680559B2 Light emitting diode having electrode extensions for current spreading 有权
标题翻译：具有用于电流扩展的电极延伸的发光二极管
公开(公告)号：US08680559B2
公开(公告)日：2014-03-25
申请号：US12941536
申请日：2010-11-08
申请人： Kyoung Wan Kim , Soo Young Moon , Kyu Ho Lee , Yeo Jin Yoon , Jeong Hee Yang , Won Cheol Seo
发明人： Kyoung Wan Kim , Soo Young Moon , Kyu Ho Lee , Yeo Jin Yoon , Jeong Hee Yang , Won Cheol Seo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.
摘要翻译：本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

7. 发明申请

US20130234192A1 LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
标题翻译：具有电极板的发光二极管芯片
公开(公告)号：US20130234192A1
公开(公告)日：2013-09-12
申请号：US13885777
申请日：2011-02-28
申请人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
发明人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
IPC分类号： H01L33/46
CPC分类号： H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
摘要翻译：本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

8. 发明申请

US20130134867A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：US20130134867A1
公开(公告)日：2013-05-30
申请号：US13816572
申请日：2011-02-19
申请人： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
发明人： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
IPC分类号： H05B33/06
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.
摘要翻译：公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于基板上并具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。第一电极焊盘电连接到第一导电类型半导体层。第二电极焊盘位于衬底上。绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。至少一个上延伸部连接到第二电极焊盘以与第二导电型半导体层电连接。此外，光提取元件的图案位于第二导电类型半导体层上。

9. 发明申请

US20110053303A1 Method of fabricating semiconductor substrate and method of fabricating light emitting device 有权
公开(公告)号：US20110053303A1
公开(公告)日：2011-03-03
申请号：US12805958
申请日：2010-08-26
申请人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
发明人： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

10. 发明授权

US08525212B2 Light emitting diode having electrode extensions 有权
标题翻译：具有电极延伸的发光二极管
公开(公告)号：US08525212B2
公开(公告)日：2013-09-03
申请号：US12962365
申请日：2010-12-07
申请人： Kyoung Wan Kim , Ye Seul Kim , Jeong Hee Yang , Jae Moo Kim
发明人： Kyoung Wan Kim , Ye Seul Kim , Jeong Hee Yang , Jae Moo Kim
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad. In addition, the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension.
摘要翻译：本发明的一个示例性实施例公开了一种发光二极管，包括具有第一边缘，与第一边缘相对的第二边缘，连接第一边缘和第二边缘的第三边缘以及与第一边缘相对的第四边缘的下部接触层第三边缘，布置在下接触层上的台面结构，台面结构包括有源层和上接触层，布置在下接触层上的第一电极焊盘，布置在台面结构上的第二电极焊盘，第一下部延伸部分和从第一电极焊盘朝向第二边缘延伸的第二下部延伸部分，第一下部延伸部分和第二下部延伸部分的远端彼此远离与第一电极焊盘接触的前端，第一上延伸部分，第二上延伸部和从第二电极焊盘延伸的第三上延伸部。此外，第一上部延伸部分和第二上部延伸部分从第二电极焊盘延伸以包围第一下部延伸部分和第二下部延伸部分，并且第三上部延伸部延伸到第一下部延伸部分和第二下部延伸部分之间的区域。

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