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    • 1. 发明授权
    • Gallium nitride compound semiconductor device and manufacturing method
    • 氮化镓化合物半导体器件及其制造方法
    • US07372066B2
    • 2008-05-13
    • US10516703
    • 2003-06-04
    • Hisao SatoTomoya SugaharaShinji KitazawaYoshihiko MuramotoShiro Sakai
    • Hisao SatoTomoya SugaharaShinji KitazawaYoshihiko MuramotoShiro Sakai
    • H01L29/06
    • H01L33/32B82Y20/00H01L33/04H01L33/06
    • A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.
    • 使用GaN的发光元件。 在形成的衬底(10)上形成SiN缓冲层(12),GaN缓冲层(14),未掺杂的GaN层(16),Si掺杂的n-GaN层(18),SLS层(20 ),形成p型电极(30)和n电极(32)的未掺杂GaN层(22),MQW发光层(24),SLS层(26)和p-GaN层(28) 。 MQW发光层(24)具有其中InGaN阱层和AlGaN势垒层交替的结构。 SLS层(20和26)的Al含量比大于5%且小于24%。 MQW发光层(24)中的阱层的In含量比大于3%且小于20%。 阻挡层的Al含量比大于1%且小于30%。 通过将各层的含有率和膜厚度调整为所需值,波长小于400nm的光发光效率提高。
    • 2. 发明申请
    • Gallium nitride compound semiconductor device and manufacturing method
    • 氮化镓化合物半导体器件及其制造方法
    • US20060175600A1
    • 2006-08-10
    • US10516703
    • 2003-06-04
    • Hisao SatoTomoya SugaharaShinji KitazawaYoshihiko MuramotoShiro Sakai
    • Hisao SatoTomoya SugaharaShinji KitazawaYoshihiko MuramotoShiro Sakai
    • H01L31/109H01L21/00
    • H01L33/32B82Y20/00H01L33/04H01L33/06
    • A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.
    • 使用GaN的发光元件。 在形成的衬底(10)上形成SiN缓冲层(12),GaN缓冲层(14),未掺杂的GaN层(16),Si掺杂的n-GaN层(18),SLS层(20 ),形成p型电极(30)和n电极(32)的未掺杂GaN层(22),MQW发光层(24),SLS层(26)和p-GaN层(28) 。 MQW发光层(24)具有其中InGaN阱层和AlGaN势垒层交替的结构。 SLS层(20和26)的Al含量比大于5%且小于24%。 MQW发光层(24)中的阱层的In含量比大于3%且小于20%。 阻挡层的Al含量比大于1%且小于30%。 通过将各层的含有率和膜厚度调整为所需值,波长小于400nm的光发光效率提高。
    • 5. 发明授权
    • Circuit device, electronic apparatus, and power supply method
    • 电路装置,电子设备和电源方式
    • US08258771B2
    • 2012-09-04
    • US12914094
    • 2010-10-28
    • Hisao SatoAtsushi YamadaNorikazu TsukaharaToshikazu KuwanoYasuhiro Takahashi
    • Hisao SatoAtsushi YamadaNorikazu TsukaharaToshikazu KuwanoYasuhiro Takahashi
    • H02J1/00
    • H02M3/155H02M2001/0058H03K4/94H03K19/0019H03K19/0963Y02B70/1491
    • A circuit device includes: a power supply circuit; and a logic circuit, the power supply circuit supplying a first power supply voltage and a second power supply voltage to the logic circuit, the first power supply voltage supplied by the power supply circuit periodically changing with a first reference voltage as a reference voltage, the second power supply voltage supplied by the power supply circuit periodically changing with a second reference voltage as a reference voltage, the power supply circuit supplying, due to resonance, the first power supply voltage and the second power supply voltage that repeat a first period during which a voltage difference between the first power supply voltage and the second power supply voltage is decreasing and a second period during which the voltage difference is increasing, and the logic circuit performing adiabatic circuit operation with the supply of the first and the second power supply voltage.
    • 电路装置包括:电源电路; 以及逻辑电路,所述电源电路向所述逻辑电路提供第一电源电压和第二电源电压,由所述电源电路提供的所述第一电源电压以作为参考电压的第一参考电压周期性地改变, 电源电路以第二参考电压周期性地变化的第二电源电压作为参考电压,所述电源电路由于谐振而提供第一电源电压和第二电源电压,所述第一电源电压和第二电源电压重复第一周期 所述第一电源电压和所述第二电源电压之间的电压差减小,并且所述电压差增加的第二时段,并且所述逻辑电路通过提供所述第一和第二电源电压来执行绝热电路操作。
    • 6. 发明申请
    • Error function calculation device and error function calculation method
    • 误差函数计算装置和误差函数计算方法
    • US20050120068A1
    • 2005-06-02
    • US10999293
    • 2004-11-29
    • Hisao Sato
    • Hisao Sato
    • G06F7/38G06F1/02G06F17/10G06F17/50
    • G06F17/10
    • An error function calculation device, which performs processing of calculating an error function FM(T) having T (positive real number) as a variable and M (M is an integer of 0 or more) as an order, includes a coefficient table and a calculation section. The coefficient table stores a value of FM+i(T0)/FM(T0) (i is at least one integer among 1 to n, and n is a natural number) calculated for T0, obtained by an n-th order polynomial approximation of the error function FM(T), or a multiplied value which is obtained by multiplying the value of FM+i(T0)/FM(T0) by a constant. The calculation section reads the value of FM+i(T0)/FM(T0) or the multiplied value from the coefficient table, and performs at least a part of the processing of calculating a value of the error function FM(T) by a fixed-point arithmetic using the value of FM+i(T0)/FM(T0) or the multiplied value.
    • 一种误差函数计算装置,其执行将具有T(正实数)作为变量的M(M为0以上的整数)的误差函数F(M)的计算处理为 包括系数表和计算部分。 系数表存储F + M + 1(T 0/0)/ F M(T 0)的值, (i是1至n中的至少一个整数,n是自然数),通过误差函数F N的N次多项式近似获得的T 0 < / T(T)的乘积值,或通过将F M + i(T 0/0)/ F M (T 0 )。 计算部分读取F M + I(T 0> / O)(T 0> 0)的值, 或来自系数表的相乘值,并且通过使用F的值F的定点算术来执行计算误差函数F(M)的值的处理的至少一部分, (T> 0 )或相乘的值。
    • 7. 发明授权
    • Process for producing optically active threo-3-amino-1,2-epoxy compounds
    • 光学活性苏氨酸-3-氨基-1,2-环氧化合物的制备方法
    • US06376685B1
    • 2002-04-23
    • US09600215
    • 2000-07-12
    • Yukihiro SagawaJouji SekineHisao Sato
    • Yukihiro SagawaJouji SekineHisao Sato
    • C07D30102
    • C07C303/28C07D303/36C07C309/66
    • Highly pure optically active threo-3-amino-1,2-epoxy compounds appropriate for materials for manufacturing drugs and a process for producing the same on an industrial scale. An optically active threo-3-amino-1,2-diol derivative is subjected in an organic solvent in the presence of a base to alkylsufonylation or arylsulfonylation to thereby give the corresponding optically active threo-3-amino-2-hydroxy-1-sulfonyloxy compound. Next, the resultant product is subjected to epoxidation in the presence of a base to give the corresponding optically active threo-3-amino-1,2-epoxy compound. The thus obtained epoxy compound is purified by using an organic solvent and water, thus giving a highly pure epoxy compound.
    • 适用于制造药物的材料的高纯度旋光活性苏氨酸-3-氨基-1,2-环氧化合物及其制备方法。 光学活性的苏氨酸-3-氨基-1,2-二醇衍生物在碱的存在下在有机溶剂中进行烷基磺酰化或芳基磺酰化,得到相应的光学活性的苏氨酸-3-氨基-2-羟基-1- 磺酰氧基化合物。 接着,将所得产物在碱的存在下进行环氧化,得到相应的光学活性的苏氨酸-3-氨基-1,2-环氧化合物。 由此获得的环氧化合物通过使用有机溶剂和水进行纯化,从而得到高纯度的环氧化合物。
    • 10. 发明授权
    • Paper binder
    • 纸粘合剂
    • US5472238A
    • 1995-12-05
    • US395860
    • 1995-02-28
    • Hisao Sato
    • Hisao Sato
    • B42F9/00B42D3/00
    • B42F9/00
    • A paper binder which removably secures a large number of pages of paper without injury to the paper, and which conducts binding so that it is easy to leaf through the pages. The paper binder comprises: a rectangular mount; a lever member extending in parallel with one edge of the mount and having one end rotatably supported at a corner portion of the mount; a spring member supported on the mount and having opposite ends one of which is fixed to the lever member so as to urge a free end of the lever member upward elastically; a pressing member attached to the other one of the opposite ends of the spring member so that the pressing member is elastically pressed in the direction toward the mount by an elastic force of the spring member to thereby grip a corner of paper disposed between the pressing member and the mount when the free end of the lever member is pressed downward against the elastic force of the spring member; and a locking member for locking the lever member when the free end of the lever member is pressed downward to maintain the lowered state of the lever member.
    • 一种纸粘合剂,其可拆卸地固定大量纸张而不损伤纸张,并且进行捆扎以便容易地通过页面。 纸粘合剂包括:矩形安装件; 杠杆构件,其平行于所述支架的一个边缘平行延伸,并且一端可旋转地支撑在所述支架的角部; 支撑在安装件上的弹簧构件,并且具有相对的端部,其中一个固定到杠杆构件,以便将弹性地向上推动杆构件的自由端; 按压构件,其安装在所述弹簧构件的相对端的另一个中,使得所述按压构件通过所述弹簧构件的弹力朝着所述安装件的方向弹性地按压,从而夹持设置在所述按压构件之间的纸的角部 以及当所述杆构件的自由端抵抗所述弹簧构件的弹力被向下压时所述安装件; 以及锁定构件,用于当杠杆构件的自由端向下按压以保持杆构件的降低状态时,锁定杆构件。