专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08646480B2 Fuel supply apparatus 有权
标题翻译：燃油供应装置
公开(公告)号：US08646480B2
公开(公告)日：2014-02-11
申请号：US13169404
申请日：2011-06-27
申请人： Shinya Koyama , Kyohei Hosoya , Kuniharu Kimura , Junji Miyazaki , Hikaru Tsukamoto , Toshihiko Naito
发明人： Shinya Koyama , Kyohei Hosoya , Kuniharu Kimura , Junji Miyazaki , Hikaru Tsukamoto , Toshihiko Naito
IPC分类号： F02M37/10
CPC分类号： F02M37/10 , F02M37/103 , Y10T137/85978 , Y10T137/86035
摘要： A fuel supply apparatus or fuel pump unit includes a lower case having a flange plate fixed to a fuel tank and upstanding walls extending into the fuel tank. An upper case housing a fuel pump therein is provided that includes brackets disposed along inner sides of the upstanding walls. The upstanding walls having engaging holes defined therein, and the brackets having attachment members engaging in the engaging holes. The brackets include tongues projecting heightwise beyond the upstanding walls.
摘要翻译：燃料供给装置或燃料泵单元包括具有固定到燃料箱的凸缘板和延伸到燃料箱中的直立壁的下壳体。提供了在其中容纳燃料泵的上壳体，其包括沿着直立壁的内侧设置的托架。直立的壁具有限定在其中的接合孔，并且支架具有接合在接合孔中的附接构件。支架包括高度突出超过直立墙壁的舌头。

2. 发明授权

US5629114A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region 失效
标题翻译：相移掩模及其制造方法以及使用包含半透明区域的相移掩模的曝光方法
公开(公告)号：US5629114A
公开(公告)日：1997-05-13
申请号：US480371
申请日：1995-06-07
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/80 , G03F1/32 , G03F1/38 , G03F1/54
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

3. 发明授权

US5474864A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5474864A
公开(公告)日：1995-12-12
申请号：US155370
申请日：1993-11-22
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/80 , G03F1/32 , G03F1/38 , G03F1/54
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

4. 发明授权

US5464713A Phase shift mask and method for repairing a defect of a phase shift mask 失效
标题翻译：相移掩模和修复相移掩模缺陷的方法
公开(公告)号：US5464713A
公开(公告)日：1995-11-07
申请号：US309832
申请日：1994-09-21
申请人： Nobuyuki Yoshioka , Kunihiro Hosono , Junji Miyazaki
发明人： Nobuyuki Yoshioka , Kunihiro Hosono , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/68 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： G03F1/72 , G03F1/32
摘要： In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180.degree.. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.
摘要翻译：在根据本发明的相移掩模和用于修复相移掩模的缺陷的方法中，在包括光的边界的区域中形成有移相器部分的一部分缺失的移相器缺陷部分传输部分和移相器部分，并且移相器缺陷部分补充有与移相器部分具有基本上相同的透射率的修复部件，并且能够将曝光光的相位转换180°。因此，可以在不损害作为相移掩模的功能的情况下修复在透光部分和移相器部分之间的边界附近或附近产生的移相器部分的缺陷。

5. 发明授权

US6048647A Phase shift mask of attenuation type and manufacturing method thereof 失效
标题翻译：衰减类型的相移掩模及其制造方法
公开(公告)号：US6048647A
公开(公告)日：2000-04-11
申请号：US965402
申请日：1997-11-07
申请人： Junji Miyazaki , Akihiro Nakae , Nobuyuki Yoshioka , Hidehiko Kozawa
发明人： Junji Miyazaki , Akihiro Nakae , Nobuyuki Yoshioka , Hidehiko Kozawa
IPC分类号： G03F1/68 , G03F1/00 , G03F1/26 , G03F1/29 , G03F1/32 , G03F1/36 , G03F1/80 , H01L21/027 , G03F1/08
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36
摘要： In accordance with a phase shift mask of attenuation type and a manufacturing method thereof, at a prescribed region of a phase shifter portion near and around a light transmitting portion, an auxiliary pattern is provided for controlling an amount of exposure light onto a portion of an exposed material corresponding to this region. Auxiliary pattern enables to cancel light intensity of a side lobe, thereby preventing generation of a region having a high light intensity (a side lobe) at the periphery of the light transmitting portion of the phase shift mask of attenuation type.
摘要翻译：根据衰减类型的相移掩模及其制造方法，在光透射部分附近和周围的移相器部分的规定区域设置辅助图案，用于控制曝光光的一部分对应于该区域的暴露材料。辅助图案能够消除旁瓣的光强度，从而防止在衰减类型的相移掩模的光透射部分的周围产生具有高光强（侧瓣）的区域。

6. 发明授权

US5674647A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5674647A
公开(公告)日：1997-10-07
申请号：US547520
申请日：1995-10-24
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/38 , G03F1/54 , G03F1/80 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/38 , G03F1/54 , G03F1/80
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二光透射部分由硅化钼化硅氧化物或硅化钼氧化物或氧化铬或氧化铬或碳化铬氮化物氧化物膜形成，其转换透射曝光光的相位 180°，透光率至少为2％且小于5％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼硅化物氧化物膜或硅化钼氧化物膜，或氮氧化铬膜或氧化铬膜，或碳化氮化物氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

7. 发明授权

US5644381A Method of exposure employing phase shift mask of attenuation type 失效
标题翻译：使用衰减类型的相移掩模的曝光方法
公开(公告)号：US5644381A
公开(公告)日：1997-07-01
申请号：US440611
申请日：1995-05-15
申请人： Junji Miyazaki , Nobuyuki Yoshioka
发明人： Junji Miyazaki , Nobuyuki Yoshioka
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , G03F7/207 , H01L21/027 , G03B27/42 , G03B27/32 , G03B27/72
CPC分类号： G03F1/32 , G03F1/38 , G03F7/70283
摘要： By the method of exposure using attenuation type phase shift mask, based on the phase angle of exposure light passing through second and third light transmitting portions and on hole diameters of the second and third light transmitting portions, an optimal value between first and second distances h.sub.1 and h.sub.2 can be calculated. Therefore, a resist film can be exposed at optimal focal position. As a result, even when there is a step in the material to be exposed, a desired pattern can be exposed with high precision through the same steps in every region of the material to be exposed.
摘要翻译：通过使用衰减型相移掩模的曝光方法，基于通过第二和第三透光部分的曝光光的相位角和第二和第三光透射部分的孔直径，在第一和第二距离h1之间的最佳值并且可以计算出h2。因此，可以在最佳焦点位置曝光抗蚀剂膜。结果，即使在要暴露的材料中存在台阶的情况下，也可以通过在要暴露的材料的每个区域中的相同步骤以高精度曝光所需的图案。

8. 发明授权

US5290647A Photomask and method of manufacturing a photomask 失效
标题翻译：光掩模和制造光掩模的方法
公开(公告)号：US5290647A
公开(公告)日：1994-03-01
申请号：US597373
申请日：1990-10-10
申请人： Junji Miyazaki , Hitoshi Nagata
发明人： Junji Miyazaki , Hitoshi Nagata
IPC分类号： G03F1/29 , G03F9/00
CPC分类号： G03F1/29
摘要： A photomask includes a transparent substrate, a predetermined pattern of a light blocking member disposed on the transparent substrate, and a phase member formed along a peripheral edge of the light blocking member and exposed by a predetermined width. The photomask manufacturing method includes forming a transparent film on a surface of a transparent substrate, forming a predetermined pattern of a light blocking member on the transparent film, forming an etching mask layer on the transparent film and light blocking member, anisotropically etching the etching mask layer to leave the etching mask layer on the transparent film and along a peripheral edge of the light blocking member, and selectively etching the transparent film with the light blocking member and the remaining etching mask layer as a mask to form a phase member of the transparent film along the peripheral edge of the light blocking member.
摘要翻译：光掩模包括透明基板，设置在透明基板上的遮光构件的预定图案，以及沿着遮光构件的周缘形成并以预定宽度曝光的相位构件。光掩模制造方法包括在透明基板的表面上形成透明膜，在透明膜上形成预定图案的遮光部件，在透明膜和遮光部件上形成蚀刻掩模层，各向异性蚀刻蚀刻掩模层，在透明膜上并沿着遮光部件的周缘留下蚀刻掩模层，并用遮光部件和剩余的蚀刻掩模层选择性地蚀刻透明膜作为掩模，以形成透明的相位部件膜沿着遮光构件的周缘。

9. 发明授权

US5830607A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5830607A
公开(公告)日：1998-11-03
申请号：US864005
申请日：1997-05-27
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/38 , G03F1/54 , G03F1/80 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/38 , G03F1/54 , G03F1/80
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二光透射部分由硅化钼化硅氧化物或硅化钼氧化物或氧化铬或氧化铬或碳化铬氮化物氧化物膜形成，其转换透射曝光光的相位 180°，透光率至少为2％且小于5％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼硅化物氧化物膜或硅化钼氧化物膜，或氮氧化铬膜或氧化铬膜，或碳化氮化物氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

10. 发明授权

US5691090A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5691090A
公开(公告)日：1997-11-25
申请号：US772226
申请日：1996-12-20
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
CPC分类号： G03F1/80 , G03F1/32 , G03F1/38 , G03F1/54
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式