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    • 1. 发明授权
    • Organic semiconductor material and organic semiconductor element
    • 有机半导体材料和有机半导体元件
    • US07365359B2
    • 2008-04-29
    • US10698002
    • 2003-10-30
    • Shinobu SakuradaKen TominoHiroki MaedaMasanori AkadaJun-ichi Hanna
    • Shinobu SakuradaKen TominoHiroki MaedaMasanori AkadaJun-ichi Hanna
    • H01L51/00
    • H01L51/0071H01L51/0025H01L51/0076
    • An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.
    • 提供具有高电荷迁移率特性的有机半导体材料和有机半导体元件。 有机半导体材料具有棒状低分子液晶性,包括包括L 6π电子芳环,M 10π电子芳环和N 14pi电子芳环的骨架结构,其中L,M和N各自为 0(零)至4,L + M + N = 1至4; 以及附接到骨架结构的两端的端子结构。 端子结构可以形成液晶。 在100Hz <= f <= 1MHz的频率f范围内的阻抗测量中确定的有机半导体材料的阻抗的相位角θ为-80°θ= -90°, 各向同性相状态的有机半导体材料保持在一对相对基板之间,电极间隔为9μm。
    • 8. 发明授权
    • Organic semiconductor material
    • 有机半导体材料
    • US07259390B2
    • 2007-08-21
    • US10787895
    • 2004-02-26
    • Jun-Ichi HannaHiroaki IinoHiroki Maeda
    • Jun-Ichi HannaHiroaki IinoHiroki Maeda
    • H01L29/08H01L29/12H01L35/24
    • C09K19/00H01L51/0076
    • There is provided a liquid crystalline material, suitable for use as an organic semiconductor material, in which, even when the charge transport distance is long, the charge transport capability is satisfactory, the charge mobility is high, and the dependence of the charge transport properties upon field strength is small. The organic semiconductor material having rodlike low-molecular weight liquid crystallinity comprises: a core structure comprising L 6 π electron rings, M 8 π electron rings, N 10 π electron rings, O 12 π electron rings, P 14 π electron rings, Q 16 π electron rings, R 18 π electron rings, S 20 π electron rings, T 22 π electron rings, U 24 π electron rings, and V 26 π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and a terminal structure attached to at least one end of the core structure, the terminal structure being capable of developing liquid crystallinity.
    • 提供了适合用作有机半导体材料的液晶材料,其中即使电荷传输距离长,电荷传输能力也令人满意,电荷迁移率高,电荷传输性质的依赖性 场强很小。 具有棒状低分子量液晶性的有机半导体材料包括:包含L 6π电子环,M 8π电子环,N 10π电子环,O 12π电子环,P 14π电子环,Q 16 π电子环,R 18π电子环,S 20π电子环,T 22π电子环,U 24π电子环和V 26π电子环,其中L,M,N,O,P,Q,R, S,T,U和V各自为0(零)至6的整数,L + M + N + O + P + Q + R + S + T + U + V = 1至6; 以及连接到芯结构的至少一端的端子结构,该端子结构能够显现液晶性。
    • 9. 发明授权
    • Manufacturing method of organic semiconductor device
    • 有机半导体器件的制造方法
    • US08202759B2
    • 2012-06-19
    • US12863538
    • 2009-01-21
    • Ken TominoMasanao MatsuokaTomomi SuzukiHiroki Maeda
    • Ken TominoMasanao MatsuokaTomomi SuzukiHiroki Maeda
    • H01L51/40
    • H01L51/0013H01L51/003H01L51/0076H01L51/0545H01L51/0558
    • The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
    • 本发明提供了一种有机半导体器件的制造方法,其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤,并且该步骤用途: 包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底,包括衬底,形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层 的栅极绝缘层。