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1. 发明授权

US07847284B2 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device 有权
标题翻译：有机半导体材料，有机半导体结构和有机半导体器件
公开(公告)号：US07847284B2
公开(公告)日：2010-12-07
申请号：US10508479
申请日：2003-03-26
申请人： Jun-Ichi Hanna , Teppei Shimakawa , Masanori Akada , Hiroki Maeda
发明人： Jun-Ichi Hanna , Teppei Shimakawa , Masanori Akada , Hiroki Maeda
IPC分类号： H01L51/30
CPC分类号： H01L51/0052 , C08K5/0008 , H01L51/0012 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/005 , H01L51/0076 , H01L51/0545 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： There are provided an organic semiconductor material, which can constitute an organic semiconductor layer having homogeneous and a high level of charge transfer characteristics over a large area, and an organic semiconductor structure and an organic semiconductor device utilizing the organic semiconductor material. The organic semiconductor material comprises a polymeric compound and a monomeric compound, the polymeric compound having, in a part of its side chain, a core structure comprising a predetermined π electron ring, the monomeric compound having a core structure comprising a predetermined π electron ring, the monomeric compound having, in at least one of its both ends, a terminal group capable of developing liquid crystallinity.
摘要翻译：提供一种有机半导体材料，其可以构成在大面积上具有均匀和高水平的电荷转移特性的有机半导体层，以及利用有机半导体材料的有机半导体结构和有机半导体器件。有机半导体材料包括聚合化合物和单体化合物，其一部分侧链中的聚合物具有包含预定的＆lt; 电子环，具有包含预定的pgr的核心结构的单体化合物; 在其两端中的至少一个中具有能够显现液晶性的端基的单体化合物。

2. 发明申请

US20050127354A1 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device 有权
标题翻译：有机半导体材料，有机半导体结构和有机半导体器件
公开(公告)号：US20050127354A1
公开(公告)日：2005-06-16
申请号：US10508479
申请日：2003-03-26
申请人： Jun-Ichi Hanna , Teppei Shimakawa , Masanori Akada , Hiroki Maeda
发明人： Jun-Ichi Hanna , Teppei Shimakawa , Masanori Akada , Hiroki Maeda
IPC分类号： C08K5/00 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/42
CPC分类号： H01L51/0052 , C08K5/0008 , H01L51/0012 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/005 , H01L51/0076 , H01L51/0545 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： There are provided an organic semiconductor material, which can constitute an organic semiconductor layer having homogeneous and a high level of charge transfer characteristics over a large area, and an organic semiconductor structure and an organic semiconductor device utilizing the organic semiconductor material. The organic semiconductor material comprises a polymeric compound and a monomeric compound, the polymeric compound having, in a part of its side chain, a core structure comprising a predetermined π electron ring, the monomeric compound having a core structure comprising a predetermined π electron ring, the monomeric compound having, in at least one of its both ends, a terminal group capable of developing liquid crystallinity.
摘要翻译：提供一种有机半导体材料，其可以构成在大面积上具有均匀和高水平的电荷转移特性的有机半导体层，以及利用有机半导体材料的有机半导体结构和有机半导体器件。有机半导体材料包括聚合物和单体化合物，其一部分侧链具有包含预定π电子环的芯结构，所述单体化合物具有包含预定π电子环的核心结构，所述单体化合物在其两端中的至少一个中具有能够显现液晶性的端基。

3. 发明授权

US5879970A Process of growing polycrystalline silicon-germanium alloy having large silicon content 失效
标题翻译：生长具有大硅含量的多晶硅锗合金的工艺
公开(公告)号：US5879970A
公开(公告)日：1999-03-09
申请号：US922577
申请日：1997-09-03
申请人： Kunihiko Shiota , Jun-ichi Hanna
发明人： Kunihiko Shiota , Jun-ichi Hanna
IPC分类号： C23C16/42 , H01L21/205 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02532 , H01L21/0262 , Y10S438/935 , Y10S438/967 , Y10S438/98
摘要： Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.
摘要翻译：多晶硅锗合金通过化学气相沉积在基板温度为350摄氏度至450摄氏度的条件下在玻璃基板上生长，Si2H6的气体流量与GeF4的气体流量之比为 20：0.9〜40：0.9，稀释气体选自氦气，氩气，氮气和氢气，多晶硅 - 锗的硅的组成比等于或大于80％，使载体流动性大大提高。

4. 发明授权

US5322568A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5322568A
公开(公告)日：1994-06-21
申请号：US999548
申请日：1992-12-31
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

5. 发明授权

US4868014A Method for forming thin film multi-layer structure member 失效
标题翻译：薄膜多层结构件形成方法
公开(公告)号：US4868014A
公开(公告)日：1989-09-19
申请号：US3054
申请日：1987-01-13
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/452 , G03G5/082 , H01L21/205 , H01L21/336 , H01L31/20
CPC分类号： H01L29/66757 , C23C16/452 , G03G5/08235 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50
摘要： A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：一种用于形成薄膜多层结构构件的方法，所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种，包括形成至少一层半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热，使起始材料（A）为在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物（B），其在发热下与发热元件接触导致热解离反应进行活化，从而形成成为沉淀的起始原料的前体（X）并且使用前体（X）作为薄膜的构成元素的供给源，以及通过引入用于沉积膜形成的气态原料（a）形成至少一层其它薄膜的步骤，以及具有起始材料（a）的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触，由此在激发态下化学形成包含前体的多种前体，并使用至少一种前体前体作为用于沉积膜的构成元件的馈送源。

6. 发明授权

US4865883A Method for forming a deposited film containing IN or SN 失效
标题翻译：用于形成含有IN或SN的沉积膜的方法
公开(公告)号：US4865883A
公开(公告)日：1989-09-12
申请号：US298202
申请日：1989-01-17
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/452 , H01L21/205
CPC分类号： C23C16/407
摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜源的沉积膜的构成元素。

7. 发明授权

US4844950A Method for forming a metal film on a substrate 失效
标题翻译：在基板上形成金属膜的方法
公开(公告)号：US4844950A
公开(公告)日：1989-07-04
申请号：US942213
申请日：1986-12-16
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/06 , C23C16/30 , C23C16/44 , H01L21/205
CPC分类号： C23C16/06
摘要： A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括向反应空间引入含有用于形成沉积膜的过渡金属元素的可气化起始材料和具有用于所述起始材料的氧化作用的气态卤素氧化剂以在其间进行接触从而在激发态下化学形成多种前体，包括前体，并且使用这些前体的至少一种前体作为沉积的构成元素的进料源，在存在于成膜空间中的基底上形成金属沉积膜电影。

8. 发明授权

US4837048A Method for forming a deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4837048A
公开(公告)日：1989-06-06
申请号：US920189
申请日：1986-10-17
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： C23C14/14 , C23C16/22 , C23C16/452 , H01L21/205
CPC分类号： H01L21/0237 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262
摘要： A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.
摘要翻译：用于形成沉积膜的方法包括引入用于形成沉积膜的气态原料和具有氧化作用的气态卤素氧化剂（X），所述氧化剂具有氧化作用的原料，至少一种氧化剂（ON）的气态氧并且优选还包含含有价电子控制剂成分作为成分的气态物质（D）进入反应空间，以使它们之间发生化学接触，从而在激发态下形成含有前体的多种前体，并且使用这些前体的至少一种前体作为沉积膜的构成元素的进料源，在存在于成膜空间中的基板上形成沉积膜。

9. 发明授权

US4818560A Method for preparation of multi-layer structure film 失效
标题翻译：多层结构薄膜的制备方法
公开(公告)号：US4818560A
公开(公告)日：1989-04-04
申请号：US945894
申请日：1986-12-24
申请人： Shunichi Ishihara , Jun-Ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , G03G5/082 , H01L21/02 , H01L21/205 , B05D3/06
CPC分类号： H01L21/02425 , C23C16/22 , C23C16/452 , H01L21/02381 , H01L21/02422 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
摘要翻译：通过根据化学气相沉积法形成沉积膜来制备多层结构膜的方法包括引入作为主流量分量的主要原料气体（A）和目标原料气体（B），其是小流量成分和氢外部活化成反应空间，并周期性地控制引入的所述目标原料气体（B）的量，从而形成具有多层结构的沉积膜。

10. 发明授权

US07638795B2 Organic semiconductor structure, process for producing the same, and organic semiconductor device 失效
标题翻译：有机半导体结构体及其制造方法以及有机半导体装置
公开(公告)号：US07638795B2
公开(公告)日：2009-12-29
申请号：US11390667
申请日：2006-03-28
申请人： Jun-ichi Hanna , Hiroki Maeda , Masanori Akada
发明人： Jun-ichi Hanna , Hiroki Maeda , Masanori Akada
IPC分类号： H01L35/24 , H01L51/40
CPC分类号： H01L51/0076 , H01L51/0012 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0058 , H01L51/0062 , H01L51/0064 , H01L51/0067 , H01L51/0068 , H01L51/0069 , H01L51/0071 , H01L51/0545 , H01L51/0558 , H01L51/057 , Y02E10/549 , Y02P70/521
摘要： There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.
摘要翻译：提供了一种有机半导体结构，其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层，其制造方法和有机半导体器件。有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。液晶有机半导体材料包括具有芯的有机化合物，其包括L 6pi电子环，M 8pi电子环，N 10pi电子环，O 12pi电子环，P 14pi电子环，Q 16pi电子环，R 18pi电子环，S 20pi电子环，T 22pi电子环，U 24pi电子环和V 26pi电子环，其中L，M，N，O，P，Q，R，S，T，U和V各自为0的整数零）至6和L + M + N + O + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下显示至少一种液晶态分解温度。

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