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1. 发明授权

US07365359B2 Organic semiconductor material and organic semiconductor element 失效
标题翻译：有机半导体材料和有机半导体元件
公开(公告)号：US07365359B2
公开(公告)日：2008-04-29
申请号：US10698002
申请日：2003-10-30
申请人： Shinobu Sakurada , Ken Tomino , Hiroki Maeda , Masanori Akada , Jun-ichi Hanna
发明人： Shinobu Sakurada , Ken Tomino , Hiroki Maeda , Masanori Akada , Jun-ichi Hanna
IPC分类号： H01L51/00
CPC分类号： H01L51/0071 , H01L51/0025 , H01L51/0076
摘要： An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.
摘要翻译：提供具有高电荷迁移率特性的有机半导体材料和有机半导体元件。有机半导体材料具有棒状低分子液晶性，包括包括L 6π电子芳环，M 10π电子芳环和N 14pi电子芳环的骨架结构，其中L，M和N各自为 0（零）至4，L + M + N = 1至4; 以及附接到骨架结构的两端的端子结构。端子结构可以形成液晶。在100Hz <= f <= 1MHz的频率f范围内的阻抗测量中确定的有机半导体材料的阻抗的相位角θ为-80°θ= -90°，各向同性相状态的有机半导体材料保持在一对相对基板之间，电极间隔为9μm。

2. 发明授权

US07638795B2 Organic semiconductor structure, process for producing the same, and organic semiconductor device 失效
标题翻译：有机半导体结构体及其制造方法以及有机半导体装置
公开(公告)号：US07638795B2
公开(公告)日：2009-12-29
申请号：US11390667
申请日：2006-03-28
申请人： Jun-ichi Hanna , Hiroki Maeda , Masanori Akada
发明人： Jun-ichi Hanna , Hiroki Maeda , Masanori Akada
IPC分类号： H01L35/24 , H01L51/40
CPC分类号： H01L51/0076 , H01L51/0012 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0058 , H01L51/0062 , H01L51/0064 , H01L51/0067 , H01L51/0068 , H01L51/0069 , H01L51/0071 , H01L51/0545 , H01L51/0558 , H01L51/057 , Y02E10/549 , Y02P70/521
摘要： There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.
摘要翻译：提供了一种有机半导体结构，其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层，其制造方法和有机半导体器件。有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。液晶有机半导体材料包括具有芯的有机化合物，其包括L 6pi电子环，M 8pi电子环，N 10pi电子环，O 12pi电子环，P 14pi电子环，Q 16pi电子环，R 18pi电子环，S 20pi电子环，T 22pi电子环，U 24pi电子环和V 26pi电子环，其中L，M，N，O，P，Q，R，S，T，U和V各自为0的整数零）至6和L + M + N + O + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下显示至少一种液晶态分解温度。

3. 发明申请

US20060166396A1 Organic semiconductor structure, process for producing the same, and organic semiconductor device 失效
标题翻译：有机半导体结构体及其制造方法以及有机半导体装置
公开(公告)号：US20060166396A1
公开(公告)日：2006-07-27
申请号：US11390667
申请日：2006-03-28
申请人： Jun-ichi Hanna , Hiroki Maeda , Masanori Akada
发明人： Jun-ichi Hanna , Hiroki Maeda , Masanori Akada
IPC分类号： H01L21/00
CPC分类号： H01L51/0076 , H01L51/0012 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0058 , H01L51/0062 , H01L51/0064 , H01L51/0067 , H01L51/0068 , H01L51/0069 , H01L51/0071 , H01L51/0545 , H01L51/0558 , H01L51/057 , Y02E10/549 , Y02P70/521
摘要： There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+0+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.
摘要翻译：提供了一种有机半导体结构，其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层，其制造方法和有机半导体器件。有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。液晶有机半导体材料包括具有芯的有机化合物，其包括L 6pi电子环，M 8pi电子环，N 10pi电子环，O 12pi电子环，P 14pi电子环，Q 16pi电子环，R 18pi电子环，S 20pi电子环，T 22pi电子环，U 24pi电子环和V 26pi电子环，其中L，M，N，O，P，Q，R，S，T，U和V各自为0的整数零）至6和L + M + N + 0 + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下表现出至少一种液晶态分解温度。

4. 发明申请

US20060231832A1 Liquid crystalline organic compound, organic semiconductor structure, organic semiconductor device, and process for producing liquid crystalline organic compound 审中-公开
标题翻译：液晶有机化合物，有机半导体结构，有机半导体器件，以及液晶有机化合物的制造方法
公开(公告)号：US20060231832A1
公开(公告)日：2006-10-19
申请号：US11370779
申请日：2006-03-08
申请人： Keiji Tokunaga , Yudai Yamashita , Jun-ichi Hanna
发明人： Keiji Tokunaga , Yudai Yamashita , Jun-ichi Hanna
IPC分类号： H01L29/08
CPC分类号： H01L51/0076 , C07D277/66 , C09K19/3477 , C09K19/3497 , C09K19/40 , C09K2019/3408 , H01L51/0069 , H01L51/0545
摘要： A liquid crystalline organic compound which gives a liquid crystal phase in a temperature range containing at least a room temperature and can exhibit a high charge mobility; an organic semiconductor structure and an organic semiconductor device each having the liquid crystalline organic compound are provided. The liquid crystalline organic compound contains any one of benzothiazole, benzoselenazole, benzoxazole and indene skeletons represented by the following chemical formula 1: wherein A is a nitrogen atom or a CH group, and B is a sulfur, selenium or oxygen atom is contained as Z1 in the following chemical formula 2: R1-Y1-Z1-Y2-R2 2 wherein, R1 and R2 are each independently a saturated or unsaturated hydrocarbon of a straight chain, a branched chain or a cyclic structure having 1 to 22 carbon atoms; R1 and R2 may be each independently bonded directly to Z1 without interposing Y1 or Y2 therebetween; and Y1 and Y2 are each independently selected from the group consisting of oxygen and selenium atoms and —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCOO and —CH2 groups.
摘要翻译：一种液晶有机化合物，其在至少包含室温的温度范围内产生液晶相，并且可表现出高的电荷迁移率; 提供了具有液晶有机化合物的有机半导体结构和有机半导体器件。液晶性有机化合物含有以下化学式1表示的苯并噻唑，苯并硒唑，苯并恶唑和茚骨架中的任一种：其中A为氮原子或CH基团，B为硫，硒或氧原子为Z1 在以下化学式2中：<？in-line-formula description =“In-line formula”end =“lead”？> R1-Y1-Z1-Y2-R2 2 <？in-line-formula description =“In 其中，R 1和R 2各自独立地为具有1至22个碳原子的直链，支链或环状结构的饱和或不饱和烃; R1和R2可以各自独立地键合到Z1而不插入Y1或Y2; 并且Y 1和Y 2各自独立地选自氧和硒原子和-CO - ， - OCO - ， - COO - ， - N-CH - ， - CONH - ， - NH - ， - NHCOO和-CH SUB> 2 组。

5. 发明授权

US5795396A Apparatus for forming crystalline film 失效
标题翻译：用于形成晶体膜的装置
公开(公告)号：US5795396A
公开(公告)日：1998-08-18
申请号：US671806
申请日：1996-06-25
申请人： Shunichi Ishihara , Jun-ichi Hanna
发明人： Shunichi Ishihara , Jun-ichi Hanna
IPC分类号： C30B25/00 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/46 , C30B25/02 , C30B25/10 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/24 , C23C16/455 , C23C16/46 , C23C16/463 , C30B25/10 , C30B25/105 , C30B29/06
摘要： An apparatus for forming a deposited film which includes a film forming chamber, with a means to evacuate the inside of the chamber. A substrate holder for holding a substrate is located in the chamber. Starting material gas is supplied to the chamber to enable film formation. A light energy source is also provided to irradiate the substrate in order to heat its surface. The strength of the light energy is controlled to provide a non-uniform temperature distribution pattern on the substrate.
摘要翻译：一种用于形成沉积膜的装置，其包括一个成膜室，该装置具有抽空该室内部的装置。用于保持衬底的衬底保持器位于腔室中。将起始原料气体供应到室以使膜形成。还提供光能源以照射基板以加热其表面。控制光能的强度以在衬底上提供不均匀的温度分布图案。

6. 发明授权

US5718761A Method of forming crystalline compound semiconductor film 失效
标题翻译：形成结晶化合物半导体膜的方法
公开(公告)号：US5718761A
公开(公告)日：1998-02-17
申请号：US635214
申请日：1996-04-17
申请人： Hiroyuki Tokunaga , Jun-ichi Hanna , Isamu Shimizu
发明人： Hiroyuki Tokunaga , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： C30B25/02 , C30B25/18 , H01L21/36 , H01L21/365 , C03B25/04
CPC分类号： C30B25/02 , C30B25/18 , C30B29/48 , H01L21/02422 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S117/913
摘要： A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S.sub.NDS) having a smaller nucleation density and a nucleation surface (S.sub.NDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND.sub.L) than the nucleation density (NDs) of the non-nucleation surface (S.sub.NDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.2 each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II-VI compound semiconductor film on the substrate.
摘要翻译：形成结晶化合物半导体膜的方法包括引入晶体形成空间，该晶体形成空间容纳其中具有较小成核密度的非成核表面（SNDS）和具有足够晶体生长的微细表面积的成核表面（SNDL）的基底只有来自单个核并且具有比非成核表面（SNDS）的成核密度（NDs）更大的成核密度（NDL）的相对于彼此相邻的用于提供属于该组的元素的有机金属化合物（VI） VI为通式R 1 -Xn-R 2表示的周期表，其中n为2以上的整数; R1和R2各自表示烷基; X是S，Se或Te，以及用于在气相中提供属于元素周期表II族的元素的化合物（II），并将根据气相法的晶体生长处理施加到基板上以选择性地形成晶体组II -VI化合物半导体膜。

7. 发明授权

US5879970A Process of growing polycrystalline silicon-germanium alloy having large silicon content 失效
标题翻译：生长具有大硅含量的多晶硅锗合金的工艺
公开(公告)号：US5879970A
公开(公告)日：1999-03-09
申请号：US922577
申请日：1997-09-03
申请人： Kunihiko Shiota , Jun-ichi Hanna
发明人： Kunihiko Shiota , Jun-ichi Hanna
IPC分类号： C23C16/42 , H01L21/205 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02532 , H01L21/0262 , Y10S438/935 , Y10S438/967 , Y10S438/98
摘要： Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.
摘要翻译：多晶硅锗合金通过化学气相沉积在基板温度为350摄氏度至450摄氏度的条件下在玻璃基板上生长，Si2H6的气体流量与GeF4的气体流量之比为 20：0.9〜40：0.9，稀释气体选自氦气，氩气，氮气和氢气，多晶硅 - 锗的硅的组成比等于或大于80％，使载体流动性大大提高。

8. 发明授权

US5322568A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5322568A
公开(公告)日：1994-06-21
申请号：US999548
申请日：1992-12-31
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

9. 发明授权

US4865883A Method for forming a deposited film containing IN or SN 失效
标题翻译：用于形成含有IN或SN的沉积膜的方法
公开(公告)号：US4865883A
公开(公告)日：1989-09-12
申请号：US298202
申请日：1989-01-17
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/452 , H01L21/205
CPC分类号： C23C16/407
摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜源的沉积膜的构成元素。

10. 发明授权

US4844950A Method for forming a metal film on a substrate 失效
标题翻译：在基板上形成金属膜的方法
公开(公告)号：US4844950A
公开(公告)日：1989-07-04
申请号：US942213
申请日：1986-12-16
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/06 , C23C16/30 , C23C16/44 , H01L21/205
CPC分类号： C23C16/06
摘要： A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括向反应空间引入含有用于形成沉积膜的过渡金属元素的可气化起始材料和具有用于所述起始材料的氧化作用的气态卤素氧化剂以在其间进行接触从而在激发态下化学形成多种前体，包括前体，并且使用这些前体的至少一种前体作为沉积的构成元素的进料源，在存在于成膜空间中的基底上形成金属沉积膜电影。

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