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1. 发明授权

US08999749B2 Method for manufacturing organic semiconductor element, and organic semiconductor element 有权
标题翻译：制造有机半导体元件和有机半导体元件的方法
公开(公告)号：US08999749B2
公开(公告)日：2015-04-07
申请号：US14110643
申请日：2012-04-11
申请人： Shin-ya Fujimoto , Ken Tomino
发明人： Shin-ya Fujimoto , Ken Tomino
IPC分类号： H01L51/40 , H01L51/00 , H01L51/10 , H01L51/05
CPC分类号： H01L51/0001 , H01L51/0017 , H01L51/0024 , H01L51/0512 , H01L51/0529 , H01L51/0541 , H01L51/0545 , H01L51/0566 , H01L51/107
摘要： A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.
摘要翻译：一种制造有机半导体元件的方法，该有机半导体元件能够通过简单易用的工艺来降低有机半导体层的迁移率而图案化有机半导体层，而有机半导体元件包括：有机半导体层形成步骤; 第一电介质层形成步骤，在所述有机半导体层上形成至少位于所述源电极和所述漏电极之间的沟道区上的第一电介质层; 以及第二电介质层形成工序，其中，所述第二电介质层具有与所述第一电介质层周围的有机半导体层接触的接触部以及所述有机半导体层和所述第二电介质层彼此混合的混合层以构成接触部分中的有机半导体层和第二电介质层之间的界面。

2. 发明授权

US07470561B2 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体器件
公开(公告)号：US07470561B2
公开(公告)日：2008-12-30
申请号：US11092341
申请日：2005-03-29
申请人： Hiroki Maeda , Ken Tomino , Shigeru Sugawara , Junichi Hanna
发明人： Hiroki Maeda , Ken Tomino , Shigeru Sugawara , Junichi Hanna
IPC分类号： H01L51/00 , H01L35/24 , H01L29/786 , C09K19/58 , C09K19/38
CPC分类号： H01L51/428 , H01L51/0039 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0062 , H01L51/0065 , H01L51/0067 , H01L51/0068 , H01L51/0071 , H01L51/0076 , H01L51/0545 , Y02E10/549 , Y02P70/521 , Y10T428/10 , Y10T428/1005 , Y10T428/1036 , Y10T428/1055
摘要： The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material.To achieve the object, the present invention provides an organic semiconductor material having a structural formula of the following chemical formula 1: -((A)-(B))n- 1 wherein A is a mesogen exhibiting liquid crystallinity; has a skeletal structure comprising a π-electron ring selected from a group consisting of L-unit of 6π-electron system ring, M-unit of 8π-electron system ring, N-unit of 10π-electron system ring, O-unit of 12π-electron system ring, P-unit of 14π-electron system ring, Q-unit of 16π-electron system ring, R-unit of 18π-electron system ring, S-unit of 20 π-electron system ring, T-unit of 22π-electron system ring, U-unit of 24π-electron system ring and V-unit of 26π-electron system ring (whereupon L, M, N, O, P, Q, R, S, T, U and V each represent an integer of 0 to 12, and L+M+N+O+P+Q+R+S+T+U+V is 1 to 12); B has a chain structure with high flexibility; and n is about 3 to about 3000.
摘要翻译：本发明的主要目的在于提供一种容易进行设计的有机半导体材料，能够确保纯度，从而能够容易地在工业上使用。此外，还提供使用有机半导体材料的有机半导体结构和有机半导体器件。为了达到上述目的，本发明提供具有以下化学式1的结构式的有机半导体材料：<？in-line-formula description =“In-line Formulas”end =“lead”→> - （（A ） - （B））n- 1 <？在线公式描述=“在线公式”end =“tail”？>其中A是显示液晶的介晶; 具有包含选自由6pi电子系环的L单元，8pi电子系环的M单元，10pi电子系环的N单元，O单元的π-电子环组成的骨架结构 12pi电子系环，14pi电子系环的P单元，16pi电子系环的Q单元，18pi电子系环的R单元，20个π电子系环的S单元，T单元的22pi电子系统环，24pi电子系统环的U单元和26pi电子系统环的V单元（其中L，M，N，O，P，Q，R，S，T，U和V各自表示0〜12的整数，L + M + N + O + P + Q + R + S + T + U + V为1〜12）。 B具有高度灵活性的链结构; 并且n为约3至约3000。

3. 发明授权

US07365359B2 Organic semiconductor material and organic semiconductor element 失效
标题翻译：有机半导体材料和有机半导体元件
公开(公告)号：US07365359B2
公开(公告)日：2008-04-29
申请号：US10698002
申请日：2003-10-30
申请人： Shinobu Sakurada , Ken Tomino , Hiroki Maeda , Masanori Akada , Jun-ichi Hanna
发明人： Shinobu Sakurada , Ken Tomino , Hiroki Maeda , Masanori Akada , Jun-ichi Hanna
IPC分类号： H01L51/00
CPC分类号： H01L51/0071 , H01L51/0025 , H01L51/0076
摘要： An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.
摘要翻译：提供具有高电荷迁移率特性的有机半导体材料和有机半导体元件。有机半导体材料具有棒状低分子液晶性，包括包括L 6π电子芳环，M 10π电子芳环和N 14pi电子芳环的骨架结构，其中L，M和N各自为 0（零）至4，L + M + N = 1至4; 以及附接到骨架结构的两端的端子结构。端子结构可以形成液晶。在100Hz <= f <= 1MHz的频率f范围内的阻抗测量中确定的有机半导体材料的阻抗的相位角θ为-80°θ= -90°，各向同性相状态的有机半导体材料保持在一对相对基板之间，电极间隔为9μm。

4. 发明申请

US20070128763A1 Method for forming an organic semiconductor layer, organic semiconductor structure and organic semiconductor apparatus 审中-公开
标题翻译：形成有机半导体层的方法，有机半导体结构和有机半导体装置
公开(公告)号：US20070128763A1
公开(公告)日：2007-06-07
申请号：US11445939
申请日：2006-06-02
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L51/40
CPC分类号： H01L51/0007 , H01L51/0036 , H01L51/0076 , H01L51/0545 , H01L51/0558 , Y02E10/549
摘要： This invention is directed to the provision of a method for organic semiconductor layer formation that can easily form a uniform thin film, by coating, which has good charge mobility and a high level of alignment. The method for organic semiconductor layer formation is characterized by comprising the steps of: forming a coating film in a mixed liquid crystal state using a mixture, which can exhibit a thermotropic mixed liquid crystal phase, prepared by mixing an organic semiconductor material with a solvent; and either cooling the coating film to a temperature at which the coating film does not exhibit any mixed liquid crystal state, or removing the solvent while cooling the coating film, to form an organic semiconductor layer comprising a smectic liquid crystal phase or a crystal phase of the organic semiconductor material.
摘要翻译：本发明涉及提供一种有机半导体层形成方法，其可以容易地形成具有良好的电荷迁移率和较高取向度的均匀的薄膜。有机半导体层形成方法的特征在于包括以下步骤：使用可以显示通过将有机半导体材料与溶剂混合制备的热致混合液晶相的混合物形成混合液晶状态的涂膜; 并且将涂膜冷却至涂膜不显示任何混合液晶状态的温度，或者在冷却涂膜的同时除去溶剂，形成有机半导体层，该有机半导体层包括层间界面液晶相或晶相有机半导体材料。

5. 发明授权

US08202759B2 Manufacturing method of organic semiconductor device 失效
标题翻译：有机半导体器件的制造方法
公开(公告)号：US08202759B2
公开(公告)日：2012-06-19
申请号：US12863538
申请日：2009-01-21
申请人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
发明人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
IPC分类号： H01L51/40
CPC分类号： H01L51/0013 , H01L51/003 , H01L51/0076 , H01L51/0545 , H01L51/0558
摘要： The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
摘要翻译：本发明提供了一种有机半导体器件的制造方法，其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤，并且该步骤用途：包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底，包括衬底，形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层的栅极绝缘层。

6. 发明授权

US07935828B2 Organic semiconductor material, organic semiconductor structure and organic semiconductor apparatus 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体装置
公开(公告)号：US07935828B2
公开(公告)日：2011-05-03
申请号：US11445940
申请日：2006-06-02
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L21/00 , H01L51/30 , C07D513/04
CPC分类号： H01L51/0071 , C09K19/3491 , C09K19/3497 , H01L51/0076 , H01L51/0545 , H01L51/0558 , Y02E10/549
摘要： The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material is represented by chemical formula 1 wherein R1 and R2 represent an identical alkyl group having 7 to 20 carbon atoms: There is also provided a liquid crystalline organic semiconductor material characterized by being represented by chemical formula 2 wherein R3 and R4 represent an identical alkyl group having 7 to 20 carbon atoms:
摘要翻译：本发明涉及提供一种在成膜环境下高度稳定的新型液晶有机半导体材料，同时可以容易地通过涂布形成膜。液晶有机半导体材料由化学式1表示，其中R 1和R 2表示相同的具有7至20个碳原子的烷基。还提供了以化学式2表示的液晶有机半导体材料，其中R3和R4 表示具有7至20个碳原子的相同的烷基：

7. 发明申请

US20100224869A1 ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR STRUCTURE AND ORGANIC SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：有机半导体材料，有机半导体结构和有机半导体器件
公开(公告)号：US20100224869A1
公开(公告)日：2010-09-09
申请号：US12782046
申请日：2010-05-18
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L51/10 , C07D409/14
CPC分类号： H01L51/0068 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.
摘要翻译：本发明涉及提供一种在成膜环境下高度稳定的液晶有机半导体材料，同时可以容易地通过涂布形成膜。液晶有机半导体材料包括：包含彼此线性连接的3至6个噻吩的噻吩骨架; 和位于噻吩骨架两侧的碳原子数为1〜20的相同的烷基，其中分别引入了噻吩骨架和烷基之间的乙炔骨架，或者将乙炔骨架对称引入到噻吩骨架中。

8. 发明申请

US20060076554A1 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device 失效
标题翻译：有机半导体材料，有机半导体结构和有机半导体器件
公开(公告)号：US20060076554A1
公开(公告)日：2006-04-13
申请号：US11092238
申请日：2005-03-29
申请人： Hiroki Maeda , Ken Tomino , Shigeru Sugawara , Masahiro Funahashi , Junichi Hanna
发明人： Hiroki Maeda , Ken Tomino , Shigeru Sugawara , Masahiro Funahashi , Junichi Hanna
IPC分类号： H01L29/08
CPC分类号： H01L51/0068 , H01L51/0036 , H01L51/0076 , H01L51/0545 , Y02E10/549 , Y10T428/31504
摘要： The object is to provide an organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material comprising a quaterthiophene skeleton shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.
摘要翻译：本发明的目的是提供一种有机半导体材料，其能够在至少包含常温的宽温度范围内显示出液晶相，并表现出高的载流子迁移率，以及由有机半导体材料形成的有机半导体结构和有机半导体器件。为了达到上述目的，本发明提供一种有机半导体材料，其含有下述化学式1所示的四噻吩骨架，其中化学式1中的R1为C1〜C20的烷基或氢，R2为烷基的C1至C20或氢。

9. 发明申请

US20140027752A1 METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT, AND ORGANIC SEMICONDUCTOR ELEMENT 有权
标题翻译：制造有机半导体元件和有机半导体元件的方法
公开(公告)号：US20140027752A1
公开(公告)日：2014-01-30
申请号：US14110643
申请日：2012-04-11
申请人： Shin-ya Fujimoto , Ken Tomino
发明人： Shin-ya Fujimoto , Ken Tomino
IPC分类号： H01L51/00 , H01L51/05
CPC分类号： H01L51/0001 , H01L51/0017 , H01L51/0024 , H01L51/0512 , H01L51/0529 , H01L51/0541 , H01L51/0545 , H01L51/0566 , H01L51/107
摘要： A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.
摘要翻译：一种制造有机半导体元件的方法，该有机半导体元件能够通过简单易用的工艺来降低有机半导体层的迁移率而图案化有机半导体层，而有机半导体元件包括：有机半导体层形成步骤; 第一电介质层形成步骤，在所述有机半导体层上形成至少位于所述源电极和所述漏电极之间的沟道区上的第一电介质层; 以及第二电介质层形成工序，其中，所述第二电介质层具有与所述第一电介质层周围的有机半导体层接触的接触部以及所述有机半导体层和所述第二电介质层彼此混合的混合层以构成接触部分中的有机半导体层和第二电介质层之间的界面。

10. 发明申请

US20110053313A1 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE 失效
标题翻译：有机半导体器件的制造方法
公开(公告)号：US20110053313A1
公开(公告)日：2011-03-03
申请号：US12863538
申请日：2009-01-21
申请人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
发明人： Ken Tomino , Masanao Matsuoka , Tomomi Suzuki , Hiroki Maeda
IPC分类号： H01L51/10
CPC分类号： H01L51/0013 , H01L51/003 , H01L51/0076 , H01L51/0545 , H01L51/0558
摘要： The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
摘要翻译：本发明提供了一种有机半导体器件的制造方法，其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤，并且该步骤用途：包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底，包括衬底，形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层的栅极绝缘层。

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