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    • 4. 发明授权
    • Organic semiconductor material and organic semiconductor element
    • 有机半导体材料和有机半导体元件
    • US07365359B2
    • 2008-04-29
    • US10698002
    • 2003-10-30
    • Shinobu SakuradaKen TominoHiroki MaedaMasanori AkadaJun-ichi Hanna
    • Shinobu SakuradaKen TominoHiroki MaedaMasanori AkadaJun-ichi Hanna
    • H01L51/00
    • H01L51/0071H01L51/0025H01L51/0076
    • An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.
    • 提供具有高电荷迁移率特性的有机半导体材料和有机半导体元件。 有机半导体材料具有棒状低分子液晶性,包括包括L 6π电子芳环,M 10π电子芳环和N 14pi电子芳环的骨架结构,其中L,M和N各自为 0(零)至4,L + M + N = 1至4; 以及附接到骨架结构的两端的端子结构。 端子结构可以形成液晶。 在100Hz <= f <= 1MHz的频率f范围内的阻抗测量中确定的有机半导体材料的阻抗的相位角θ为-80°θ= -90°, 各向同性相状态的有机半导体材料保持在一对相对基板之间,电极间隔为9μm。
    • 10. 发明授权
    • Photoelectric sensor, information recording system, and information
recording method
    • 光电传感器,信息记录系统和信息记录方法
    • US5488601A
    • 1996-01-30
    • US141110
    • 1993-10-26
    • Shinichi SakanoDaigo AokiMinoru UtsumiMasanori AkadaOsamu Shimizu
    • Shinichi SakanoDaigo AokiMinoru UtsumiMasanori AkadaOsamu Shimizu
    • G11C7/00G11C13/04H04N5/30G11B7/00
    • G11C7/005G11C13/04H04N5/30
    • An information recording system including a photoelectric sensor being semiconductive and having a photoconductive layer stacked on an electrode, and an information recording medium having an information recording layer stacked on an electrode so that information can be recorded on the information recording layer by an electric field or electric charge. The photoelectric sensor and the information recording medium are disposed to face each other, and information exposure is carried out with a voltage being applied between the two electrodes, thereby enabling information to be recorded on the information recording medium. The photoconductive layer of the photoelectric sensor is capable of amplifying an electric field or electric charge given to the information recording medium, so that the intensity of electric field or the amount of electric charge given to the information recording medium can be increased to a level higher than the light energy actually applied. Accordingly, information recording of high sensitivity can be performed even if information exposure is carried out with a relatively small light energy.
    • 一种信息记录系统,包括半导体的光电传感器和层叠在电极上的光电导层,以及信息记录介质,其具有堆叠在电极上的信息记录层,以便可以通过电场将信息记录在信息记录层上,或 电荷。 光电传感器和信息记录介质被设置为彼此面对,并且在两个电极之间施加电压来执行信息曝光,从而使得能够将信息记录在信息记录介质上。 光电传感器的光电导层能够放大给予信息记录介质的电场或电荷,从而可以将给予信息记录介质的电场强度或电荷量提高到更高的水平 比实际应用的光能量。 因此,即使以较小的光能进行信息曝光,也可以进行高灵敏度的信息记录。