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1. 发明申请

US20090206252A1 Defect inspection method and its system 有权
标题翻译：缺陷检查方法及其系统
公开(公告)号：US20090206252A1
公开(公告)日：2009-08-20
申请号：US12320574
申请日：2009-01-29
申请人： Shinji Okazaki , Shoji Hotta , Yasunari Sohda , Yoshinori Nakayama
发明人： Shinji Okazaki , Shoji Hotta , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： G01N23/00
CPC分类号： H01L22/12 , G06T7/0006 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01L2924/0002 , H01L2924/00
摘要： A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.
摘要翻译：一种能够容易地管理半导体集成图案的致命缺陷的方法，该方法能够存储由半导体集成电路设计者设计的每个图案的设计数据，以及存储具有根据其设计意图排列的图案重要性级别的设计意图数据分别。该方法还可以预测由于目标曝光系统等的特性而系统地产生的缺陷，同时在预先进行的模拟中将每个设计的电路图案暴露并描绘到晶片上，并将这些缺陷存储为热点信息。此外，该方法还能够将设计意图数据与热点信息组合，以限制可能包括关于对象半导体集成电路的特性的高可能性的系统缺陷的检查点，并显着缩短缺陷检查时间。

2. 发明授权

US07943903B2 Defect inspection method and its system 有权
标题翻译：缺陷检查方法及其系统
公开(公告)号：US07943903B2
公开(公告)日：2011-05-17
申请号：US12320574
申请日：2009-01-29
申请人： Shinji Okazaki , Shoji Hotta , Yasunari Sohda , Yoshinori Nakayama
发明人： Shinji Okazaki , Shoji Hotta , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： H01J37/153 , G01N23/00
CPC分类号： H01L22/12 , G06T7/0006 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01L2924/0002 , H01L2924/00
摘要： A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.
摘要翻译：一种能够容易地管理半导体集成图案的致命缺陷的方法，该方法能够存储由半导体集成电路设计者设计的每个图案的设计数据，以及存储具有根据其设计意图排列的图案重要性级别的设计意图数据分别。该方法还可以预测由于目标曝光系统等的特性而系统地产生的缺陷，同时在预先进行的模拟中将每个设计的电路图案暴露并描绘到晶片上，并将这些缺陷存储为热点信息。此外，该方法还能够将设计意图数据与热点信息组合，以限制可能包括关于对象半导体集成电路的特性的高可能性的系统缺陷的检查点，并显着缩短缺陷检查时间。

3. 发明授权

US08575547B2 Electron beam measurement apparatus 有权
标题翻译：电子束测量装置
公开(公告)号：US08575547B2
公开(公告)日：2013-11-05
申请号：US12982202
申请日：2010-12-30
申请人： Yasunari Sohda , Shoji Hotta , Shinji Okazaki , Muneyuki Fukuda
发明人： Yasunari Sohda , Shoji Hotta , Shinji Okazaki , Muneyuki Fukuda
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G03F7/7065 , G03F7/70541 , G03F7/70625 , G06T7/0006 , G06T2207/10056 , G06T2207/30148 , H01J2237/221 , H01J2237/24578 , H01J2237/2817 , H01L22/12
摘要： The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.
摘要翻译：本发明提供一种电子束测量技术，用于测量样品上图案的形状或尺寸，或检测缺陷等。电子束测量装置具有通过多曝光方法照射在基板上描绘的图案的单元，并且根据曝光历史记录将所获取的图像中的图案分类为多组。基于图案的亮度和图案的白色波段之间的差异获得曝光历史记录。

4. 发明授权

US07884325B2 Electron beam measurement apparatus 有权
标题翻译：电子束测量装置
公开(公告)号：US07884325B2
公开(公告)日：2011-02-08
申请号：US12328161
申请日：2008-12-04
申请人： Yasunari Sohda , Shoji Hotta , Shinji Okazaki , Muneyuki Fukuda
发明人： Yasunari Sohda , Shoji Hotta , Shinji Okazaki , Muneyuki Fukuda
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G03F7/7065 , G03F7/70541 , G03F7/70625 , G06T7/0006 , G06T2207/10056 , G06T2207/30148 , H01J2237/221 , H01J2237/24578 , H01J2237/2817 , H01L22/12
摘要： The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.
摘要翻译：本发明提供一种电子束测量技术，用于测量样品上图案的形状或尺寸，或检测缺陷等。电子束测量装置具有通过多曝光方法照射在基板上描绘的图案的单元，并且根据曝光历史记录将所获取的图像中的图案分类为多组。基于图案的亮度和图案的白色波段之间的差异获得曝光历史记录。

5. 发明申请

US20090136116A1 Method and apparatus for inspecting reticle 有权
标题翻译：检查掩模版的方法和装置
公开(公告)号：US20090136116A1
公开(公告)日：2009-05-28
申请号：US12292660
申请日：2008-11-24
申请人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
发明人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G06K2209/19 , G06T7/0004
摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.
摘要翻译：本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。

6. 发明授权

US08064681B2 Method and apparatus for inspecting reticle 有权
标题翻译：检查掩模版的方法和装置
公开(公告)号：US08064681B2
公开(公告)日：2011-11-22
申请号：US12292660
申请日：2008-11-24
申请人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
发明人： Nobuhiro Okai , Shinji Okazaki , Yasunari Sohda , Yoshinori Nakayama
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G06K2209/19 , G06T7/0004
摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.
摘要翻译：本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。

7. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

8. 发明授权

US08268209B2 Pattern forming method and its mold 失效
标题翻译：图案成型方法及其模具
公开(公告)号：US08268209B2
公开(公告)日：2012-09-18
申请号：US11623776
申请日：2007-01-17
申请人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
发明人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
IPC分类号： H01L23/544
CPC分类号： H01L21/76838 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7076 , G11B5/855 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.
摘要翻译：在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

9. 发明授权

US07750296B2 Scanning electron microscope and calibration of image distortion 有权
标题翻译：扫描电子显微镜和图像失真校准
公开(公告)号：US07750296B2
公开(公告)日：2010-07-06
申请号：US11866426
申请日：2007-10-03
申请人： Keiichiro Hitomi , Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi
发明人： Keiichiro Hitomi , Yasunari Sohda , Yoshinori Nakayama , Hajime Koyanagi
IPC分类号： G01J4/00 , G01N23/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2826
摘要： In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要翻译：在通过测量扫描失真和校准扫描失真来获得没有失真的扫描电子显微镜图像的方法和装置中，存在由于电子束的扫描失真引起的尺寸控制中出现误差的问题。为了解决这个问题，通过用电子束扫描预定区域来获得图像，从图像中选择多个区域，在每个区域中测量图案间距，并根据结果计算扫描失真量的测量，然后校正。

10. 发明授权

US07425714B2 Measurement method of electron beam current, electron beam writing system and electron beam detector 有权
标题翻译：电子束电流，电子束写入系统和电子束检测器的测量方法
公开(公告)号：US07425714B2
公开(公告)日：2008-09-16
申请号：US11207710
申请日：2005-08-22
申请人： Makoto Sakakibara , Yoshinori Nakayama , Hiroya Ohta , Yasunari Sohda , Noriyuki Tanaka , Yasuhiro Someda
发明人： Makoto Sakakibara , Yoshinori Nakayama , Hiroya Ohta , Yasunari Sohda , Noriyuki Tanaka , Yasuhiro Someda
IPC分类号： G21K5/10
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G01R19/0061 , H01J37/243 , H01J2237/30472
摘要： A technology capable of reducing the influence of the noise overlapped in a long transmission line when accurately measuring weak beam current in an electron beam writing system and capable of accurately and efficiently measuring weak beam current in a beam writing system using multiple beams is provided. With using a switch for connecting and disconnecting an electron beam detecting device and a detected signal line, the electron beam detecting device is disconnected from the detected signal line to accumulate the detected signals in the electron beam detecting device during the beam current measurement. Simultaneously with the finish of the measurement, the electron beam detecting device and the detected signal line are connected to measure the accumulated signals. Also, in order to simultaneously perform the measurement method, a plurality of electron beam detecting devices and switches are used to simultaneously measure a plurality of electron beams with high accuracy.
摘要翻译：提供了一种能够在精确测量电子束写入系统中的弱光束电流的同时减少重叠在长传输线上的噪声影响的技术，并且能够精确高效地测量使用多个光束的光束写入系统中的弱光束电流。通过使用用于连接和断开电子束检测装置的开关和检测到的信号线，电子束检测装置与检测到的信号线断开，以在束电流测量期间将检测到的信号累积在电子束检测装置中。在测量结束的同时，连接电子束检测装置和检测信号线来测量累积信号。此外，为了同时进行测量方法，使用多个电子束检测装置和开关以高精度同时测量多个电子束。

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