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    • 1. 发明授权
    • Two step exposure to strengthen structure of polyimide or negative tone photosensitive material
    • 两步曝光加强聚酰亚胺或负色感光材料的结构
    • US06943124B1
    • 2005-09-13
    • US10197327
    • 2002-07-17
    • Shin-Rung LuHo-Ku Lan
    • Shin-Rung LuHo-Ku Lan
    • H01L21/302H01L21/31
    • H01L21/31144G03F7/0382G03F7/11G03F7/2024H01L21/0274
    • A method is provided for forming features in a polyimide layer that is employed as an insulating layer or buffer layer during the fabrication of semiconductor devices or chip packaging structures. A pattern is formed in a photosensitive layer that has a high film retention after the development step and a crosslinked network that strengthens and stabilizes it for subsequent processing. The process involves exposing a negative tone photosensitive layer with a first exposure dose that is less than the normal dose used to image the material. The exposed layer is developed to provide a scum free substrate. A second exposure dose then strengthens the formed image by crosslinking unreacted components. First and second exposure doses are determined from a plot of film thickness loss vs. exposure energy. The method applies to photosensitive polyimide precursors as well as negative photoresists that are crosslinked by free radical or chemical amplification mechanisms.
    • 提供了一种用于在半导体器件或芯片封装结构的制造期间用作绝缘层或缓冲层的聚酰亚胺层中形成特征的方法。 在显影步骤后具有高膜保留性的感光层和形成强化稳定性的交联网络进行后续处理的图案形成。 该方法包括以低于用于成像材料的正常剂量的第一曝光剂量曝光负色调感光层。 曝光层被开发以提供无浮渣衬底。 然后第二次曝光剂量通过交联未反应的组分来增强形成的图像。 第一和第二曝光剂量由薄膜厚度损失与曝光能量的关系曲线确定。 该方法适用于光敏聚酰亚胺前体以及通过自由基或化学扩增机制交联的负性光致抗蚀剂。
    • 3. 发明授权
    • Method for reducing surface leakage current on semiconductor intergrated
circuits during polyimide passivation
    • 在聚酰亚胺钝化期间减少半导体集成电路上的表面泄漏电流的方法
    • US5807787A
    • 1998-09-15
    • US755862
    • 1996-12-02
    • Wen-Jui FuHo-Ku LanYing-Chen Chao
    • Wen-Jui FuHo-Ku LanYing-Chen Chao
    • H01L21/311H01C21/4762
    • H01L21/31138Y10S438/974
    • A method is achieved for reducing the surface leakage current between adjacent bonding pads on integrated circuit substrates after forming a patterned polyimide passivation layer. When the polyimide layer is patterned to open contacts areas over the bonding pads, plasma ashing in oxygen is used to remove residual polyimide that otherwise causes high contact resistance, and poor chip yield. This plasma ashing also modifies the insulating layer between bonding pads resulting in an unwanted increase in surface leakage currents between bonding pads. The passivation process is improved by using a thermal treatment step in either a nitrogen or air ambient after the plasma ashing to essentially eliminate the increased surface leakage current and improve chip yield.
    • 在形成图案化的聚酰亚胺钝化层之后,实现了一种降低集成电路基板上的相邻焊盘之间的表面泄漏电流的方法。 当将聚酰亚胺层图案化以在接合焊盘上打开接触区域时,使用氧气中的等离子体灰化来除去残留的聚酰亚胺,否则会导致高接触电阻和较差的芯片产量。 该等离子体灰化还修改接合焊盘之间的绝缘层,导致焊盘之间的表面泄漏电流的不期望的增加。 通过在等离子体灰化之后在氮气或空气环境中使用热处理步骤来基本上消除增加的表面泄漏电流并提高芯片产量来改善钝化过程。