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1. 发明申请

US20110146061A1 METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR HAVING A FLAT SHIELD 有权
标题翻译：用于制造具有平板屏蔽的磁传感器的方法
公开(公告)号：US20110146061A1
公开(公告)日：2011-06-23
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield (deposited there-over) to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

2. 发明授权

US08296930B2 Method for manufacturing a magnetoresistive sensor having a flat shield 有权
标题翻译：具有平面屏蔽的磁阻传感器的制造方法
公开(公告)号：US08296930B2
公开(公告)日：2012-10-30
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

3. 发明授权

US06929961B2 Dual function array feature for CMP process control and inspection 失效
标题翻译：用于CMP过程控制和检查的双功能阵列功能
公开(公告)号：US06929961B2
公开(公告)日：2005-08-16
申请号：US10733980
申请日：2003-12-10
申请人： Justin Jia-Jen Hwu , Thomas L. Leong
发明人： Justin Jia-Jen Hwu , Thomas L. Leong
IPC分类号： H01L21/00 , H01L23/544
CPC分类号： H01L22/34
摘要： CMP process control array groups are fabricated upon the surface of the wafer for viewing through an optical microscope. The array groups include a plurality of test arrays, where each array includes a plurality of projecting test features. Each of the projecting test features are formed with the same projecting height and have a hard upper surface layer, such as diamond-like-carbon (DLC). All of the projecting test features within an array are formed with the same diameter, and the diameter of projecting test features of a particular array differs from the diameter of projecting test features in another array. The diameters are chosen such that the DLC surface is removed in specifically designed time increments, such as 5 seconds, from array to array, where projecting test features with the DLC surface removed appear as bright white, while the arrays with test features that retain some DLC surface are significantly darker.
摘要翻译： CMP工艺控制阵列组被制造在晶片的表面上，以通过光学显微镜观察。阵列组包括多个测试阵列，其中每个阵列包括多个突出的测试特征。每个突出的测试特征形成具有相同的突出高度并且具有硬的上表面层，例如类金刚石（DLC）。阵列中的所有突出的测试特征形成为具有相同的直径，并且特定阵列的突出测试特征的直径与另一阵列中的突出测试特征的直径不同。选择直径使得DLC表面以特定设计的时间增量（例如从阵列到阵列的5秒）去除，其中去除DLC表面的突出的测试特征显示为亮白色，而具有测试特征的阵列保留一些 DLC表面明显较暗。

4. 发明授权

US07530158B2 CPP read sensor fabrication using heat resistant photomask 失效
标题翻译： CPP使用耐热光掩模读取传感器制造
公开(公告)号：US07530158B2
公开(公告)日：2009-05-12
申请号：US11110330
申请日：2005-04-19
申请人： Satoru Araki , Robert Stanley Beach , Ying Hong , Thomas L. Leong , Timothy J. Minvielle , Howard Gordon Zolla
发明人： Satoru Araki , Robert Stanley Beach , Ying Hong , Thomas L. Leong , Timothy J. Minvielle , Howard Gordon Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , Y10T29/49032 , Y10T29/49041
摘要： A method is disclosed for fabricating a CPP read head for a magnetic disk drive having an electrical isolation layer. The method includes providing a first shield layer, depositing a sensor stack on the first shield layer, a CMP stop layer is deposited on the sensor stack, and a release layer is deposited a on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned and then oxidized by Reactive Ion Etching to form a high temperature photomask. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process. The read head is then continued as either an in-stack bias sensor with ‘draped shield’ variation, or a hard bias stabilization variation.
摘要翻译：公开了一种用于制造具有电隔离层的磁盘驱动器的CPP读取头的方法。该方法包括提供第一屏蔽层，在第一屏蔽层上沉积传感器堆叠，CMP阻挡层沉积在传感器堆叠上，并且释放层沉积在CMP停止层上。含有Si的光致抗蚀剂材料沉积在剥离层上，然后将光致抗蚀剂材料图案化，然后通过反应离子蚀刻被氧化以形成高温光掩模。然后使用高温沉积工艺沉积电隔离层以围绕传感器堆叠。然后，读头继续作为具有“悬垂屏蔽”变化的堆叠内偏压传感器或硬偏压稳定变化。

5. 发明授权

US07186574B2 CMP process metrology test structures 有权
标题翻译： CMP过程计量测试结构
公开(公告)号：US07186574B2
公开(公告)日：2007-03-06
申请号：US10956452
申请日：2004-09-30
申请人： Sukhbir Singh Dulay , Thomas L. Leong , John Jaekoyun Yang
发明人： Sukhbir Singh Dulay , Thomas L. Leong , John Jaekoyun Yang
IPC分类号： H01L21/66 , H01L21/461 , H01L21/302 , H01L21/4763 , G01R31/26
CPC分类号： H01L22/34
摘要： A method for forming metrology structures for a CMP process is described. A trench edge is formed in a base material or stack of materials which are preferably deposited as part of the process of fabricating the production structures on the wafer. A covering film of a second material with preferably with contrasting SEM properties is deposited over the trench edge in the base material. During CMP the covering film is preferentially worn away at the edge revealing the base material. The width of the base material which has been revealed is a measure of the progress of the CMP. Since the base material and the covering material are preferably selected to have contrasting images in an SEM, a CD-SEM can be used to precisely measure the CMP progress.
摘要翻译：描述了一种用于形成CMP工艺的计量结构的方法。沟槽边缘形成在材料的基材或堆叠中，其优选作为在晶片上制造生产结构的过程的一部分而沉积。优选具有对比SEM性质的第二材料的覆盖膜沉积在基材中的沟槽边缘上。在CMP期间，覆盖膜优先在露出基材的边缘处磨损掉。已经揭示的基材的宽度是CMP的进展的度量。由于基材和覆盖材料优选选择为在SEM中具有对比图像，所以可以使用CD-SEM来精确测量CMP进展。

6. 发明授权

US5277749A Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps 失效
标题翻译：当执行利用高应力金属和/或多个蒸发步骤的剥离过程时，减轻应力和抵抗模板分层的方法和装置
公开(公告)号：US5277749A
公开(公告)日：1994-01-11
申请号：US778496
申请日：1991-10-17
申请人： Jonathan H. Griffith , John I. Kim , Thomas L. Leong , William J. Tilly , Sari Wacks
发明人： Jonathan H. Griffith , John I. Kim , Thomas L. Leong , William J. Tilly , Sari Wacks
IPC分类号： G03F7/09 , H01L21/027 , H01L21/768 , C23C14/00
CPC分类号： H01L21/7688 , G03F7/094 , H01L21/0272 , H01L21/76885
摘要： A layer of photoresist provides a stress relief (or cushion) layer between a lift-off polymer layer and a barrier of multi-level lift-off structures. When multiple evaporation steps are required using the same lift-off pattern, the adhesion between organosilicon and organic film is stressed by a first blanked metal film. To prevent delamination between the lift-off polymer layer and RIE barrier photoresist is applied on top of the lift-off polymer and sandwiched between the organosilicon and organic materials. This photoresist acts as a cushion and as an adhesion promoter to reduce delamination after the metal deposition(s).
摘要翻译：一层光致抗蚀剂在剥离聚合物层和多层剥离结构的屏障之间提供应力消除（或缓冲）层。当使用相同的剥离图案需要多个蒸发步骤时，有机硅和有机薄膜之间的粘合力被第一冲裁金属薄膜所压制。为了防止剥离聚合物层和RIE阻挡光致抗蚀剂之间的分层施加在剥离聚合物的顶部并夹在有机硅和有机材料之间。该光致抗蚀剂用作缓冲垫和作为粘合促进剂以减少金属沉积之后的分层。

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