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1. 发明授权

US07773349B2 Tunnel MR head with long stripe height sensor stabilized through the shield 有权
标题翻译：隧道MR头，长条纹高度传感器通过屏蔽稳定
公开(公告)号：US07773349B2
公开(公告)日：2010-08-10
申请号：US11352491
申请日：2006-02-10
申请人： Robert Stanley Beach , Wipul Pemsiri Jayasekara , Vladimir Nikitin
发明人： Robert Stanley Beach , Wipul Pemsiri Jayasekara , Vladimir Nikitin
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/40
摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.
摘要翻译：在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S2屏蔽之间延伸以提供来自一个肩部的电路径，通过屏蔽，到另一个肩膀消散边缘电荷。因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。

2. 发明授权

US07768749B2 Tunnel MR head with long stripe height stabilized through side-extended bias layer 有权
标题翻译：通过侧向延伸的偏置层稳定了长条纹高度的隧道MR头
公开(公告)号：US07768749B2
公开(公告)日：2010-08-03
申请号：US11352511
申请日：2006-02-10
申请人： Robert Stanley Beach , Vladimir Nikitin
发明人： Robert Stanley Beach , Vladimir Nikitin
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912
摘要： In a tunnel magnetoresistive (TMR) device, free stack sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. On top of the upper free stack sublayer a thin upper antiferromagnetic layer may be formed to act as a hard bias layer and suppress side reading. The thickness of the upper AF layer is established to tune sensor sensitivity to external fields as well as to promote greater sensor sensitivity.
摘要翻译：在隧道磁阻（TMR）器件中，自由堆叠子层由中间间隔层隔开，用于确保自由堆叠中的均匀圆周磁化，通过反铁磁交换耦合平衡橙皮耦合。在上部自由堆叠子层的顶部，可以形成薄的上部反铁磁性层，以作为硬偏置层并抑制侧面读数。建立上部AF层的厚度以调节对外部场的传感器灵敏度，并提高传感器灵敏度。

3. 发明授权

US06449134B1 Read head with file resettable dual spin valve sensor 有权
标题翻译：读取头与文件可复位双自旋阀传感器
公开(公告)号：US06449134B1
公开(公告)日：2002-09-10
申请号：US09369076
申请日：1999-08-05
申请人： Robert Stanley Beach , Matthew Carey , Bruce A. Gurney
发明人： Robert Stanley Beach , Matthew Carey , Bruce A. Gurney
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B5/465 , G11B5/4806 , G11B19/04 , G11B2005/0008
摘要： A dual spin valve sensor is provided which is file resettable. An antiparallel (AP) coupled free layer structure is located between first and second pinned layer structures. The AP coupled free layer structure includes an AP coupling layer between first and second AP coupled free layers. When a current pulse is conducted through a sense current circuit the temperature of the sensor increases and conductive layers of the spin valve sensor exert current fields on the first and second pinned structures which set the magnetic spins of first and second antiferromagnetic pinning layers exchange coupled thereto. When the current pulse is terminated or reduced and the sensor cools the first and second pinning layers pin the magnetic moments of the first and second pinned layers antiparallel with respect to each other. Since magnetic moments of the first and second AP coupled free layers are also antiparallel with respect to each other the magnetic moments of the AP coupled free layer structure and the pinned layers are in phase so that a magnetoresistance, one on each side of the AP coupled free layer structure, are additive to provide a dual magnetoresistive effect.
摘要翻译：提供双自旋阀传感器，可以进行文件复位。反平行（AP）耦合自由层结构位于第一和第二固定层结构之间。 AP耦合自由层结构包括在第一和第二AP耦合自由层之间的AP耦合层。当电流脉冲通过感测电流电路传导时，传感器的温度升高，并且自旋阀传感器的导电层在第一和第二固定结构上施加电流场，使第一和第二反铁磁钉扎层的磁自旋与其交换耦合。当电流脉冲终止或减小时，传感器冷却第一和第二钉扎层，引导第一和第二钉扎层的磁矩相对于彼此反平行。由于第一和第二AP耦合自由层的磁矩也相对于彼此反平行，所以AP耦合自由层结构和被钉扎层的磁矩是同相的，使得在AP的每一侧耦合一个磁阻自由层结构，是添加剂以提供双重磁阻效应。

4. 发明授权

US07630177B2 Tunnel MR head with closed-edge laminated free layer 有权
标题翻译：隧道MR头与封闭层叠自由层
公开(公告)号：US07630177B2
公开(公告)日：2009-12-08
申请号：US11355045
申请日：2006-02-14
申请人： Robert Stanley Beach , David Eugene Heim , Vladimir Nikitin , David John Seagle
发明人： Robert Stanley Beach , David Eugene Heim , Vladimir Nikitin , David John Seagle
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G01R33/09 , G11B5/399
摘要： In a tunnel magnetoresistive (TMR) device, free sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. Thus, a CPP MR device may have a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack can be on the tunnel barrier, and the free stack can include structure for promoting uniform circumferential magnetization in the free stack.
摘要翻译：在隧道磁阻（TMR）器件中，自由子层由中间间隔层隔开，中间间隔层用于确保自由堆叠中的均匀圆周磁化，通过反铁磁交换耦合平衡橙皮耦合。因此，CPP MR装置可以具有种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。自由堆叠可以在隧道屏障上，并且自由堆叠可以包括用于在自由堆叠中促进均匀周向磁化的结构。

5. 发明授权

US07574791B2 Method to fabricate side shields for a magnetic sensor 失效
标题翻译：制造磁性传感器侧面屏蔽的方法
公开(公告)号：US07574791B2
公开(公告)日：2009-08-18
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Stanley Beach , Marie-Claire Cyrille , Wipul Pemsiri Jayasekara , Quang Le , Jui-Lung Li , David John Seagle , Howard Gordon Zolla
发明人： Satoru Araki , Robert Stanley Beach , Marie-Claire Cyrille , Wipul Pemsiri Jayasekara , Quang Le , Jui-Lung Li , David John Seagle , Howard Gordon Zolla
IPC分类号： G11B5/187
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.
摘要翻译：一种用于制造用于磁头的MR传感器的磁性侧屏蔽的方法。在MR传感器层的沉积之后，沉积第一DLC层。然后沉积铣削掩模层，并且去除铣削掩模层的外部，使得铣削掩模层的剩余中心部分形成为具有直的侧壁并且没有底切。然后去除传感器层的外部部分，使得铣削掩模的相对较厚的剩余中心部分位于剩余传感器层的上方。沉积薄的电绝缘层，随后沉积磁性侧屏蔽层。沉积第二DLC层，然后利用化学机械抛光（CMP）剥离步骤除去剩余的掩模层。此后，去除第一DLC层和第二DLC层，然后在其上制造第二磁屏蔽层。

6. 发明授权

US07530158B2 CPP read sensor fabrication using heat resistant photomask 失效
标题翻译： CPP使用耐热光掩模读取传感器制造
公开(公告)号：US07530158B2
公开(公告)日：2009-05-12
申请号：US11110330
申请日：2005-04-19
申请人： Satoru Araki , Robert Stanley Beach , Ying Hong , Thomas L. Leong , Timothy J. Minvielle , Howard Gordon Zolla
发明人： Satoru Araki , Robert Stanley Beach , Ying Hong , Thomas L. Leong , Timothy J. Minvielle , Howard Gordon Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , Y10T29/49032 , Y10T29/49041
摘要： A method is disclosed for fabricating a CPP read head for a magnetic disk drive having an electrical isolation layer. The method includes providing a first shield layer, depositing a sensor stack on the first shield layer, a CMP stop layer is deposited on the sensor stack, and a release layer is deposited a on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned and then oxidized by Reactive Ion Etching to form a high temperature photomask. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process. The read head is then continued as either an in-stack bias sensor with ‘draped shield’ variation, or a hard bias stabilization variation.
摘要翻译：公开了一种用于制造具有电隔离层的磁盘驱动器的CPP读取头的方法。该方法包括提供第一屏蔽层，在第一屏蔽层上沉积传感器堆叠，CMP阻挡层沉积在传感器堆叠上，并且释放层沉积在CMP停止层上。含有Si的光致抗蚀剂材料沉积在剥离层上，然后将光致抗蚀剂材料图案化，然后通过反应离子蚀刻被氧化以形成高温光掩模。然后使用高温沉积工艺沉积电隔离层以围绕传感器堆叠。然后，读头继续作为具有“悬垂屏蔽”变化的堆叠内偏压传感器或硬偏压稳定变化。

7. 发明授权

US07469466B2 Method for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing 有权
标题翻译：用于在晶片结构上提供临时的深分流以在处理期间进行静电放电保护的方法
公开(公告)号：US07469466B2
公开(公告)日：2008-12-30
申请号：US11029134
申请日：2005-01-04
申请人： Robert Stanley Beach , David John Seagle , Jila Tabib
发明人： Robert Stanley Beach , David John Seagle , Jila Tabib
IPC分类号： G11B5/187
CPC分类号： G11B5/11 , G11B5/3163 , G11B5/3903 , G11B5/40 , G11B5/455 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T29/49156
摘要： A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge is disclosed. The method includes the steps of defining a first shield that forms a first lead for both a component and a shunt; depositing a conductive material on the first shield to form the component and the shunt; defining an edge of the component and an edge of the shunt together in a single masking step; refilling with insulation adjacent the component and the shunt to their respective edges on the first shield; defining a second shield on both the component and the shunt that forms a second lead for both the component and the shunt to form a shunted assembly that electrically protects the component; lapping the shunted assembly; and removing a portion of the shunted assembly to remove the shunt and form an electrical open for an unshunted assembly.
摘要翻译：公开了一种暂时保护电敏元件免受静电放电损坏的方法。该方法包括以下步骤：为组件和分路形成用于形成第一引线的第一屏蔽; 在第一屏蔽上沉积导电材料以形成部件和分路; 在单个掩蔽步骤中将所述部件的边缘和所述分流器的边缘一起定义; 重新填充邻近部件的绝缘体和分流到其第一屏蔽件上的相应边缘; 在所述部件和所述分流器上限定形成用于所述部件和分流器的第二引线的第二屏蔽件，以形成电保护所述部件的分流组件; 研磨分流组件; 以及去除分流组件的一部分以去除分流器并形成用于未被处理的组件的电气开口。

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