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1. 发明授权

US06929961B2 Dual function array feature for CMP process control and inspection 失效
标题翻译：用于CMP过程控制和检查的双功能阵列功能
公开(公告)号：US06929961B2
公开(公告)日：2005-08-16
申请号：US10733980
申请日：2003-12-10
申请人： Justin Jia-Jen Hwu , Thomas L. Leong
发明人： Justin Jia-Jen Hwu , Thomas L. Leong
IPC分类号： H01L21/00 , H01L23/544
CPC分类号： H01L22/34
摘要： CMP process control array groups are fabricated upon the surface of the wafer for viewing through an optical microscope. The array groups include a plurality of test arrays, where each array includes a plurality of projecting test features. Each of the projecting test features are formed with the same projecting height and have a hard upper surface layer, such as diamond-like-carbon (DLC). All of the projecting test features within an array are formed with the same diameter, and the diameter of projecting test features of a particular array differs from the diameter of projecting test features in another array. The diameters are chosen such that the DLC surface is removed in specifically designed time increments, such as 5 seconds, from array to array, where projecting test features with the DLC surface removed appear as bright white, while the arrays with test features that retain some DLC surface are significantly darker.
摘要翻译： CMP工艺控制阵列组被制造在晶片的表面上，以通过光学显微镜观察。阵列组包括多个测试阵列，其中每个阵列包括多个突出的测试特征。每个突出的测试特征形成具有相同的突出高度并且具有硬的上表面层，例如类金刚石（DLC）。阵列中的所有突出的测试特征形成为具有相同的直径，并且特定阵列的突出测试特征的直径与另一阵列中的突出测试特征的直径不同。选择直径使得DLC表面以特定设计的时间增量（例如从阵列到阵列的5秒）去除，其中去除DLC表面的突出的测试特征显示为亮白色，而具有测试特征的阵列保留一些 DLC表面明显较暗。

2. 发明申请

US20130070370A1 Planarization Method for Media 有权
标题翻译：媒体平面化方法
公开(公告)号：US20130070370A1
公开(公告)日：2013-03-21
申请号：US13618691
申请日：2012-09-14
申请人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
发明人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
IPC分类号： G11B5/74
CPC分类号： G11B5/743 , B44D3/18
摘要： A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
摘要翻译：平坦化处理可以平坦化在伺服特征之间具有数据特征和较大伺服沟槽之间的数据沟槽的介质盘。填充材料层沉积在介质盘上并提供沟槽的台阶覆盖。填充材料在伺服沟槽上的数据沟槽和伺服凹槽上具有必须被移除以产生平面介质表面的数据凹槽。使用第一平面化处理来去除数据凹槽，并且使用第二平面化处理来去除伺服凹部。

3. 发明申请

US20130001195A1 METHOD OF STACK PATTERNING USING A ION ETCHING 有权
标题翻译：使用离子蚀刻的堆叠图案的方法
公开(公告)号：US20130001195A1
公开(公告)日：2013-01-03
申请号：US13174132
申请日：2011-06-30
申请人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Li-Ping Wang
发明人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Li-Ping Wang
IPC分类号： C23F1/04 , C23F1/08
CPC分类号： H01J37/30 , H01J37/3053 , H01J37/3056 , H01J2237/2007 , H01J2237/31749
摘要： The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
摘要翻译：实施例公开了一种堆叠图案化的方法，包括将堆叠装载到固定堆叠台中，使基本上与固定堆叠台同心对准的一个或多个离子束栅格组件旋转，以蚀刻堆叠并控制一个或多个离子束栅格组件以实现蚀刻堆叠的显着的轴向均匀性。

4. 发明授权

US09284649B2 Method of patterning a stack 有权
标题翻译：堆叠图案的方法
公开(公告)号：US09284649B2
公开(公告)日：2016-03-15
申请号：US13173906
申请日：2011-06-30
申请人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
发明人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
IPC分类号： B32B9/00 , C23F4/00 , G03F7/00 , G11B5/855 , B82Y10/00 , B82Y40/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
摘要： The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
摘要翻译：实施方案公开了一种制造叠层的方法，包括用氧化物层代替堆叠印记结构的金属层，使用化学蚀刻工艺对氧化物层堆叠进行图案化以将图案图像转移并将蚀刻残留物从堆叠印记结构清洗到基本上防止金属层的污染。

5. 发明申请

US20120196089A1 CHEMICALLY-MODIFIED PILLAR SURFACE TO GUIDE CYLINDER-FORMING P(S-b-MMA) BLOCK COPOLYMER ASSEMBLY 有权
标题翻译：化学改性柱面指导气缸成型P（S-b-MMA）嵌段共聚物组件
公开(公告)号：US20120196089A1
公开(公告)日：2012-08-02
申请号：US13018414
申请日：2011-01-31
申请人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
发明人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
IPC分类号： B32B3/00 , B05D3/02 , B28B11/08
CPC分类号： B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , Y10T428/24479
摘要： A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
摘要翻译：自组装密度倍增嵌段共聚物（BCP）结构的方法包括将嵌段共聚物（BCP）施加到特征印记的抗蚀剂层上。 BCP被热退火以将BCP横向分离成由第二聚合物嵌段包围的第一聚合物嵌段的自组装柱。

6. 发明申请

US20120080402A1 PLANARIZATION METHOD FOR MEDIA 有权
标题翻译：媒体平面化方法
公开(公告)号：US20120080402A1
公开(公告)日：2012-04-05
申请号：US12895630
申请日：2010-09-30
申请人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
发明人： Yuan Xu , Wei Hu , Justin Jia-Jen Hwu , Gene Gauzner , Koichi Wago , David Shiao-Min Kuo
IPC分类号： B44C1/22
CPC分类号： G11B5/743 , B44D3/18
摘要： A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
摘要翻译：平坦化处理可以平坦化在伺服特征之间具有数据特征和较大伺服沟槽之间的数据沟槽的介质盘。填充材料层沉积在介质盘上并提供沟槽的台阶覆盖。填充材料在伺服沟槽上的数据沟槽和伺服凹槽上具有必须被移除以产生平面介质表面的数据凹槽。使用第一平面化处理来去除数据凹槽，并且使用第二平面化处理来去除伺服凹部。

7. 发明授权

US07323350B2 Method of fabricating thin film calibration features for electron/ion beam image based metrology 失效
标题翻译：制造电子/离子束图像测量的薄膜校准特征的方法
公开(公告)号：US07323350B2
公开(公告)日：2008-01-29
申请号：US10957097
申请日：2004-09-30
申请人： Sukhbir Singh Dulay , Justin Jia-Jen Hwu , Thao John Pham
发明人： Sukhbir Singh Dulay , Justin Jia-Jen Hwu , Thao John Pham
IPC分类号： H01L21/00 , H01L23/58
CPC分类号： G11B5/3173 , G11B5/3163
摘要： A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.
摘要翻译：描述制造和使用薄膜校准特征的方法。为了制造根据本发明的校准标准，首先由具有所选原子序数的导电材料形成凸起特征。在凸起特征的暴露的侧壁上沉积保形薄膜层。侧壁材料选择为具有不同的原子序数，并且优选为非导电性，例如二氧化硅或氧化铝。在非导电材料沉积之后，使用受控的定向RIE工艺来去除沉积在线和沟槽的顶表面和底表面上的绝缘体层。凸起特征的侧壁之间的剩余空隙填充有导电材料。然后用化学机械平面化（CMP）对晶片进行平面化，以暴露表面上的非导电侧壁材料。非导电侧壁材料将是嵌入导电材料中的细线。

8. 发明授权

US09469525B2 Modified surface for block copolymer self-assembly 有权
标题翻译：用于嵌段共聚物自组装的改性表面
公开(公告)号：US09469525B2
公开(公告)日：2016-10-18
申请号：US13018414
申请日：2011-01-31
申请人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
发明人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
IPC分类号： B81C1/00 , G03F7/00 , G03F7/16 , B82Y10/00 , B82Y40/00
CPC分类号： B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , Y10T428/24479
摘要： A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
摘要翻译：自组装密度倍增嵌段共聚物（BCP）结构的方法包括将嵌段共聚物（BCP）施加到特征印记的抗蚀剂层上。 BCP被热退火以将BCP横向分离成由第二聚合物嵌段包围的第一聚合物嵌段的自组装柱。

9. 发明申请

US20130337176A1 NANO-SCALE VOID REDUCTION 审中-公开
标题翻译： NANO-SCALE VOID减少
公开(公告)号：US20130337176A1
公开(公告)日：2013-12-19
申请号：US13527584
申请日：2012-06-19
申请人： Justin Jia-Jen Hwu , Gennady Gauzner , Thomas Larson Greenberg
发明人： Justin Jia-Jen Hwu , Gennady Gauzner , Thomas Larson Greenberg
IPC分类号： B05D5/00 , B05C9/12 , B05D3/12
CPC分类号： G03F7/0002
摘要： Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.
摘要翻译：抗蚀刻印痕空隙缩小法可包括密封腔室。室可以填充有环境惰性气体，其中惰性气体在基板上的抗蚀剂层中的溶解度大于氦。该方法还可以包括在室内建立足以使抗蚀剂层吸收环境惰性气体并足以抑制抗蚀剂层蒸发的压力。

10. 发明申请

US20130004763A1 METHOD OF PATTERNING A STACK 有权
标题翻译：堆叠堆栈的方法
公开(公告)号：US20130004763A1
公开(公告)日：2013-01-03
申请号：US13173906
申请日：2011-06-30
申请人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
发明人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
IPC分类号： B32B3/00 , C23F1/08 , B32B19/00 , C23F1/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
摘要： The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
摘要翻译：实施方案公开了一种制造叠层的方法，包括用氧化物层代替堆叠印记结构的金属层，使用化学蚀刻工艺对氧化物层堆叠进行图案化以将图案图像转移并将蚀刻残留物从堆叠印记结构清洗到基本上防止金属层的污染。

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