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1. 发明授权

US08453916B2 Thermal conduction device and method for fabricating the same 有权
标题翻译：导热装置及其制造方法
公开(公告)号：US08453916B2
公开(公告)日：2013-06-04
申请号：US13004437
申请日：2011-01-11
申请人： Shao-Chung Hu , Hsing Hung , Hung-Cheng Lin , I-Chiao Lin , Chien-Min Sung
发明人： Shao-Chung Hu , Hsing Hung , Hung-Cheng Lin , I-Chiao Lin , Chien-Min Sung
IPC分类号： B23K31/02 , B22F7/00
CPC分类号： C09K5/00 , B32B5/16 , B32B15/20 , B32B2264/10 , B32B2307/302 , H01L23/3732 , H01L23/3733 , H01L23/3736 , H01L2924/0002 , Y10T428/25 , H01L2924/00
摘要： A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.
摘要翻译：公开了一种导热装置及其制造方法。首先，根据预定图案在平面上布置多个金刚石颗粒以形成金刚石颗粒单层。接下来，在金属材料上施加成形工艺，使得金属材料形成包裹金刚石颗粒的金属基体，以形成包含嵌入在金属基体中的金刚石颗粒单层的复合体。接下来，堆叠多个复合体并进行加热处理以将金属基体彼此接合以形成导热装置。该装置的特征在于在平面上布置金刚石颗粒以形成二维单层结构，并通过组装二维单层结构制造以形成三维多层结构。通过控制金刚石颗粒的布置，导热装置可以具有优异的导热性能。

2. 发明申请

US20110011628A1 HIGHLY THERMAL CONDUCTIVE CIRCUIT BOARD 审中-公开
标题翻译：高导热电路板
公开(公告)号：US20110011628A1
公开(公告)日：2011-01-20
申请号：US12643045
申请日：2009-12-21
申请人： Ming-Chi Kan , Shao-Chung Hu , Chien-Min Sung
发明人： Ming-Chi Kan , Shao-Chung Hu , Chien-Min Sung
IPC分类号： H05K7/20
CPC分类号： H05K1/05 , H05K2201/0323 , H05K2201/0347 , H05K2201/0355
摘要： A highly thermal conductive circuit board includes a composite substrate, and a metal layer, an insulating layer, and a conductor layer sequentially disposed on the composite substrate. When at least one electronic element is electrically disposed on the conductor layer of the highly thermal conductive circuit board, heat produced by the electronic element in operation is rapidly dissipated through characteristics such as a high thermal conductivity and a low thermal expansion coefficient of the highly thermal conductive circuit board.
摘要翻译：高导热电路板包括复合衬底和顺序地设置在复合衬底上的金属层，绝缘层和导体层。当至少一个电子元件电气地布置在高导热电路板的导体层上时，由电子元件在运行中产生的热量通过诸如高热导率和低热膨胀系数的特性快速消散导电电路板。

3. 发明授权

US07727798B1 Method for production of diamond-like carbon film having semiconducting property 有权
标题翻译：具有半导体性质的类金刚石碳膜的制造方法
公开(公告)号：US07727798B1
公开(公告)日：2010-06-01
申请号：US12360333
申请日：2009-01-27
申请人： Sea-Fue Wang , Jui-Chen Pu , Chia-Lun Lin , Fu-Ting Hsu , Kai-Hung Hsu , Yu-Chuan Wu , Shea-Jue Wang , Chien-Min Sung , Shao-Chung Hu , Ming-Chi Kan
发明人： Sea-Fue Wang , Jui-Chen Pu , Chia-Lun Lin , Fu-Ting Hsu , Kai-Hung Hsu , Yu-Chuan Wu , Shea-Jue Wang , Chien-Min Sung , Shao-Chung Hu , Ming-Chi Kan
IPC分类号： H01L21/00
CPC分类号： H01L21/0405 , C23C14/0605 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 Ω-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.
摘要翻译：具有半导体性质的类金刚石碳膜的制造方法包括通过射频磁控溅射法在硅衬底上制备掺硼的类金刚石碳（B-DLC）薄膜，其中通过将硼使用片剂作为石墨靶中的掺杂剂源。在形成含硼金刚石碳膜之后，将薄膜在500℃的温度下退火并在该温度下保持10分钟，并确定其载流子浓度和电阻率。因此证明所述硼掺杂的类金刚石碳膜的极性是p型半导体特性。载体浓度可高达1.3×1018 cm-3，其电阻率约为0.6＆OHgr; -cm; 所以。根据本发明的具有优异的半导体性能和高温稳定性的硼掺杂的半导体类金刚石碳膜最好适用于太阳能电池或电子通信以及电极元件和设备。

4. 发明授权

US07232752B2 Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation 有权
标题翻译：在化学机械抛光操作后从硅晶片去除污染物的方法
公开(公告)号：US07232752B2
公开(公告)日：2007-06-19
申请号：US10603924
申请日：2003-06-24
申请人： Shao-Chung Hu , Teng-Chun Tsai , Chia-Lin Hsu , Yung-Tsung Wei
发明人： Shao-Chung Hu , Teng-Chun Tsai , Chia-Lin Hsu , Yung-Tsung Wei
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/3212 , H01L21/02074
摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.
摘要翻译：化学机械抛光（CMP）后从硅晶片去除污染物的方法。在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

5. 发明申请

US20090266599A1 Circuit board with high thermal conductivity and method for manufacturing the same 审中-公开
标题翻译：具有高导热性的电路板及其制造方法
公开(公告)号：US20090266599A1
公开(公告)日：2009-10-29
申请号：US12222199
申请日：2008-08-05
申请人： Ming-Chi Kan , Shao-Chung Hu
发明人： Ming-Chi Kan , Shao-Chung Hu
IPC分类号： H05K1/11 , B05D5/12 , C23C14/34 , C25D3/00
CPC分类号： H05K1/053 , C23C16/26 , C25D5/02 , C25D7/00 , C25D7/123 , H05K1/0206 , H05K1/0209 , H05K1/0306 , H05K1/181 , H05K2201/0179 , H05K2201/0323 , H05K2201/09563 , H05K2201/10106 , H05K2203/0315
摘要： A circuit board having high thermal conductivity comprises a substrate, a plurality of thermal conductive insulating layers, a patterned electrical conductive layer, a plurality of through-holes and a soldering layer. The substrate has an upper surface and a lower surface; the thermal conductive insulating layers are respectively formed on the upper surface and the lower surface of the substrate. The patterned electrical conductive layer is disposed on the surfaces of the thermal conductive insulating layers. The plurality of through-holes are extended through the substrate and electrically connected to the patterned electrical conductive layer, and the soldering layer is partially formed on the patterned electric conductive layer. The present invention also discloses a method for manufacturing the circuit board as above-mentioned.
摘要翻译：具有高导热性的电路板包括基板，多个导热绝缘层，图案化导电层，多个通孔和焊接层。基板具有上表面和下表面; 导热绝缘层分别形成在基板的上表面和下表面上。图案化的导电层设置在导热绝缘层的表面上。多个通孔延伸穿过衬底并电连接到图案化的导电层，并且焊接层部分地形成在图案化的导电层上。本发明还公开了如上所述的电路板的制造方法。

6. 发明授权

US07397124B2 Process of metal interconnects 有权
标题翻译：金属互连工艺
公开(公告)号：US07397124B2
公开(公告)日：2008-07-08
申请号：US11155729
申请日：2005-06-16
申请人： Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang
发明人： Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang
IPC分类号： H01L23/48
CPC分类号： H01L21/76886 , H01L21/76805 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76867
摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.
摘要翻译：提供金属互连的工艺和由其制造的金属互连结构。在电介质层中形成开口。在填充开口的电介质层上形成金属层。在金属层和电介质层上形成膜层。在热处理期间，膜层与金属层反应，在金属层的表面形成保护层。除去与金属层不反应的膜层的部分，以避免金属层之间的短路。保护层可以保护金属层的表面免受氧化，从而可以有效地促进半导体器件的稳定性和可靠性。

7. 发明授权

US06660627B2 Method for planarization of wafers with high selectivities 有权
标题翻译：具有高选择性的晶片平面化方法
公开(公告)号：US06660627B2
公开(公告)日：2003-12-09
申请号：US10063133
申请日：2002-03-25
申请人： Shao-Chung Hu , Hsueh-Chung Chen , Shih-Hsun Hsu , Chia-Lin Hsu
发明人： Shao-Chung Hu , Hsueh-Chung Chen , Shih-Hsun Hsu , Chia-Lin Hsu
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/31051
摘要： A method for planarization of a semiconductor wafer with a high selectivity is describe. The semiconductor wafer has a hard mask, a stop layer disposed on the hard mask, and a barrier layer disposed on the stop layer. The method includes performing a chemical mechanical polishing (CMP) process on the barrier layer so as to expose the stop layer, and removing the stop layer. The polishing selectivity of the barrier layer relative to the stop layer is greater than 50. Since the material of stop layer is different from the material of barrier layer, the high selectivity is easily achieved. Thus, the surface of semiconductor wafer can be highly planarized.
摘要翻译：描述了一种以高选择性平坦化半导体晶片的方法。半导体晶片具有硬掩模，设置在硬掩模上的阻挡层和设置在阻挡层上的阻挡层。该方法包括在阻挡层上进行化学机械抛光（CMP）处理，以露出停止层，并除去停止层。阻挡层相对于停止层的抛光选择性大于50.由于阻挡层的材料与阻挡层的材料不同，因此容易实现高选择性。因此，半导体晶片的表面可以被高度平坦化。

8. 发明授权

US07867892B2 Packaging carrier with high heat dissipation and method for manufacturing the same 有权
标题翻译：具有高散热性的包装载体及其制造方法
公开(公告)号：US07867892B2
公开(公告)日：2011-01-11
申请号：US12071307
申请日：2008-02-20
申请人： Ming-Chi Kan , Shih-Yao Huang , Shao-Chung Hu
发明人： Ming-Chi Kan , Shih-Yao Huang , Shao-Chung Hu
IPC分类号： H01L21/4763
CPC分类号： H01L23/3677 , H01L23/3732 , H01L33/486 , H01L33/641 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates a packaging carrier with high heat dissipation for packaging a chip, comprising: a carrier body, an interfacial metal layer, at least one diamond-like carbon thin film, a plated layer, and an electrode layer. Herein, the packaging carrier further comprises through holes. The present invention further discloses a method for manufacturing the aforementioned packaging carrier, comprising: providing a carrier body; forming an interfacial metal layer on the upper surface of the carrier body; forming a diamond-like carbon thin film on the interfacial metal layer; forming a plated layer on the diamond-like carbon thin film; forming an electrode layer on the lower surface of the carrier body; and forming through holes extending through all or part of the aforementioned elements. The present invention uses a diamond-like carbon thin film and through holes for heat dissipation in three dimensions to improve heat dissipation of an electronic device.
摘要翻译：本发明涉及一种用于包装芯片的具有高散热性的包装载体，包括：载体，界面金属层，至少一个类金刚石碳薄膜，镀层和电极层。这里，包装载体还包括通孔。本发明还公开了一种制造上述包装载体的方法，包括：提供载体; 在载体主体的上表面上形成界面金属层; 在界面金属层上形成类金刚石碳薄膜; 在金刚石状碳薄膜上形成镀层; 在载体主体的下表面上形成电极层; 以及形成贯穿全部或部分上述元件的通孔。本发明使用类金刚石碳薄膜和用于三维散热的通孔来改善电子设备的散热。

9. 发明申请

US20090085180A1 Packaging carrier with high heat dissipation and method for manufacturing the same 有权
标题翻译：具有高散热性的包装载体及其制造方法
公开(公告)号：US20090085180A1
公开(公告)日：2009-04-02
申请号：US12071307
申请日：2008-02-20
申请人： Ming-Chi Kan , Shih-Yao Huang , Shao-Chung Hu
发明人： Ming-Chi Kan , Shih-Yao Huang , Shao-Chung Hu
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L23/3677 , H01L23/3732 , H01L33/486 , H01L33/641 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates a packaging carrier with high heat dissipation for packaging a chip, comprising: a carrier body, an interfacial metal layer, at least one diamond-like carbon thin film, a plated layer, and an electrode layer. Herein, the packaging carrier further comprises through holes. The present invention further discloses a method for manufacturing the aforementioned packaging carrier, comprising: providing a carrier body; forming an interfacial metal layer on the upper surface of the carrier body; forming a diamond-like carbon thin film on the interfacial metal layer; forming a plated layer on the diamond-like carbon thin film; forming an electrode layer on the lower surface of the carrier body; and forming through holes extending through all or part of the aforementioned elements. The present invention uses a diamond-like carbon thin film and through holes for heat dissipation in three dimensions to improve heat dissipation of an electronic device.
摘要翻译：本发明涉及一种用于包装芯片的具有高散热性的包装载体，包括：载体，界面金属层，至少一个类金刚石碳薄膜，镀层和电极层。这里，包装载体还包括通孔。本发明还公开了一种制造上述包装载体的方法，包括：提供载体; 在载体主体的上表面上形成界面金属层; 在界面金属层上形成类金刚石碳薄膜; 在金刚石状碳薄膜上形成镀层; 在载体主体的下表面上形成电极层; 以及形成贯穿全部或部分上述元件的通孔。本发明使用类金刚石碳薄膜和用于三维散热的通孔来改善电子设备的散热。

10. 发明申请

US20050098892A1 Structure and process of metal interconnects 审中-公开
标题翻译：金属互连的结构和工艺
公开(公告)号：US20050098892A1
公开(公告)日：2005-05-12
申请号：US10718897
申请日：2003-11-20
申请人： Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang
发明人： Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang
IPC分类号： H01L21/4763 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76886 , H01L21/76805 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76867
摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.
摘要翻译：提供金属互连的工艺和由其制造的金属互连结构。在电介质层中形成开口。在填充开口的电介质层上形成金属层。在金属层和电介质层上形成膜层。在热处理期间，膜层与金属层反应，在金属层的表面形成保护层。除去与金属层不反应的膜层的部分，以避免金属层之间的短路。保护层可以保护金属层的表面免受氧化，从而可以有效地促进半导体器件的稳定性和可靠性。

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