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    • 4. 发明申请
    • PATTERNED GRAPHENE FABRICATION METHOD
    • 图形石墨制造方法
    • US20130183625A1
    • 2013-07-18
    • US13444504
    • 2012-04-11
    • Chien-Min SUNGI-Chiao LinHung-Cheng Lin
    • Chien-Min SUNGI-Chiao LinHung-Cheng Lin
    • G03F7/20B82Y40/00
    • B82Y40/00B82Y30/00C01B32/184
    • A method for fabricating patterned graphene structures, which adopts a photolithographic etching process to fabricate patterned graphene structures, comprises steps: providing a substrate; forming a catalytic layer on the substrate; forming a carbon layer on the catalytic layer; heating the carbon layer to a synthesis temperature to form a graphene layer. A photolithographic etching process is performed on the catalytic layer before formation of the carbon layer. Alternatively, a photolithographic etching process is performed on the carbon layer before heating. Alternatively, a photolithographic etching process is performed on the graphene layer after heating. Compared with the laser etching process, the photolithographic etching process is suitable to fabricate large-area patterned graphene structures and has advantages of high productivity and low cost.
    • 一种用于制造图案化石墨烯结构的方法,其采用光刻蚀刻工艺来制造图案化的石墨烯结构,包括以下步骤:提供衬底; 在基板上形成催化层; 在催化层上形成碳层; 将碳层加热到合成温度以形成石墨烯层。 在形成碳层之前对催化层进行光刻蚀刻工艺。 或者,在加热之前对碳层进行光刻蚀刻工艺。 或者,加热后对石墨烯层进行光刻蚀刻工艺。 与激光蚀刻工艺相比,光刻蚀刻工艺适于制造大面积图案化的石墨烯结构,并具有生产率高,成本低的优点。