专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08453916B2 Thermal conduction device and method for fabricating the same 有权
标题翻译：导热装置及其制造方法
公开(公告)号：US08453916B2
公开(公告)日：2013-06-04
申请号：US13004437
申请日：2011-01-11
申请人： Shao-Chung Hu , Hsing Hung , Hung-Cheng Lin , I-Chiao Lin , Chien-Min Sung
发明人： Shao-Chung Hu , Hsing Hung , Hung-Cheng Lin , I-Chiao Lin , Chien-Min Sung
IPC分类号： B23K31/02 , B22F7/00
CPC分类号： C09K5/00 , B32B5/16 , B32B15/20 , B32B2264/10 , B32B2307/302 , H01L23/3732 , H01L23/3733 , H01L23/3736 , H01L2924/0002 , Y10T428/25 , H01L2924/00
摘要： A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.
摘要翻译：公开了一种导热装置及其制造方法。首先，根据预定图案在平面上布置多个金刚石颗粒以形成金刚石颗粒单层。接下来，在金属材料上施加成形工艺，使得金属材料形成包裹金刚石颗粒的金属基体，以形成包含嵌入在金属基体中的金刚石颗粒单层的复合体。接下来，堆叠多个复合体并进行加热处理以将金属基体彼此接合以形成导热装置。该装置的特征在于在平面上布置金刚石颗粒以形成二维单层结构，并通过组装二维单层结构制造以形成三维多层结构。通过控制金刚石颗粒的布置，导热装置可以具有优异的导热性能。

2. 发明申请

US20200156946A1 GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS 审中-公开
公开(公告)号：US20200156946A1
公开(公告)日：2020-05-21
申请号：US16573804
申请日：2019-09-17
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C04B35/583 , C04B35/622 , C04B35/653 , H01L21/02 , C01B32/20 , C23C14/06
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

3. 发明申请

US20180044185A1 GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS 审中-公开
公开(公告)号：US20180044185A1
公开(公告)日：2018-02-15
申请号：US15444226
申请日：2017-02-27
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： H01L21/02 , B82Y40/00 , C04B35/653 , C04B35/622 , C23C14/06 , B82Y30/00 , C04B35/583
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

4. 发明申请

US20100218801A1 Graphene and Hexagonal Boron Nitride Planes and Associated Methods 审中-公开
标题翻译：石墨烯和六角氮化硼飞机及相关方法
公开(公告)号：US20100218801A1
公开(公告)日：2010-09-02
申请号：US12713004
申请日：2010-02-25
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C23C14/06 , C23C14/24 , B32B15/04 , H01L31/042
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译：公开了主要由sp2键合的原子制成的石墨烯层及相关方法。一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。石墨膜形成为基本上没有晶格缺陷。

5. 发明申请

US20130221268A1 THERMALLY-CONDUCTIVE PASTE 审中-公开
标题翻译：导热胶
公开(公告)号：US20130221268A1
公开(公告)日：2013-08-29
申请号：US13483942
申请日：2012-05-30
申请人： Chien-Min SUNG , I-Chiao Lin , Hung-Cheng Lin
发明人： Chien-Min SUNG , I-Chiao Lin , Hung-Cheng Lin
IPC分类号： C09K5/00
CPC分类号： C09K5/14
摘要： A thermally-conductive paste comprises a carrier, at least one graphene platelet, and a plurality of packing materials. The graphene platelets and the packing materials are dispersed in the carrier. At least a portion of the packing materials contact the surface of the graphene platelet. The graphene platelet has a very high thermal conductivity coefficient and a characteristic 2D structure and thus can provide continuous and long-distance thermal conduction paths for the thermally-conductive paste. Thereby is greatly improved the thermal conduction performance of the thermally-conductive paste.
摘要翻译：导热膏包括载体，至少一个石墨烯薄片和多个包装材料。石墨烯血小板和包装材料分散在载体中。至少一部分包装材料接触石墨烯薄片的表面。石墨烯薄片具有非常高的导热系数和特征的2D结构，因此可为导热浆提供连续和长距离的导热路径。从而大大提高导热膏的导热性能。

6. 发明申请

US20130183625A1 PATTERNED GRAPHENE FABRICATION METHOD 审中-公开
标题翻译：图形石墨制造方法
公开(公告)号：US20130183625A1
公开(公告)日：2013-07-18
申请号：US13444504
申请日：2012-04-11
申请人： Chien-Min SUNG , I-Chiao Lin , Hung-Cheng Lin
发明人： Chien-Min SUNG , I-Chiao Lin , Hung-Cheng Lin
IPC分类号： G03F7/20 , B82Y40/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/184
摘要： A method for fabricating patterned graphene structures, which adopts a photolithographic etching process to fabricate patterned graphene structures, comprises steps: providing a substrate; forming a catalytic layer on the substrate; forming a carbon layer on the catalytic layer; heating the carbon layer to a synthesis temperature to form a graphene layer. A photolithographic etching process is performed on the catalytic layer before formation of the carbon layer. Alternatively, a photolithographic etching process is performed on the carbon layer before heating. Alternatively, a photolithographic etching process is performed on the graphene layer after heating. Compared with the laser etching process, the photolithographic etching process is suitable to fabricate large-area patterned graphene structures and has advantages of high productivity and low cost.
摘要翻译：一种用于制造图案化石墨烯结构的方法，其采用光刻蚀刻工艺来制造图案化的石墨烯结构，包括以下步骤：提供衬底; 在基板上形成催化层; 在催化层上形成碳层; 将碳层加热到合成温度以形成石墨烯层。在形成碳层之前对催化层进行光刻蚀刻工艺。或者，在加热之前对碳层进行光刻蚀刻工艺。或者，加热后对石墨烯层进行光刻蚀刻工艺。与激光蚀刻工艺相比，光刻蚀刻工艺适于制造大面积图案化的石墨烯结构，并具有生产率高，成本低的优点。

7. 发明申请

US20130052838A1 ANNEALING METHOD TO REDUCE DEFECTS OF EPITAXIAL FILMS AND EPITAXIAL FILMS FORMED THEREWITH 审中-公开
标题翻译：减少形成外源膜和外源膜的缺陷的退火方法
公开(公告)号：US20130052838A1
公开(公告)日：2013-02-28
申请号：US13336757
申请日：2011-12-23
申请人： I-Chiao Lin , Chien-Min Sung
发明人： I-Chiao Lin , Chien-Min Sung
IPC分类号： H01L21/26
CPC分类号： H01L21/3245
摘要： An annealing method to reduce defects of epitaxial films and epitaxial films formed therewith. The annealing method includes features as follows: apply a pressure ranged from 10 MPa to 6,000 MPa to an epitaxial film grown on a substrate through a vapor phase deposition process and heat the epitaxial film at a temperature lower than the melting temperature of the epitaxial film. Through applying pressure to the epitaxial film, the lattice strain of the epitaxial film is alleviated, and therefore the defect density of the epitaxial film also decreases.
摘要翻译：一种减少外延膜和由其形成的外延膜的缺陷的退火方法。退火方法的特征如下：通过气相沉积工艺将从10MPa至6,000MPa的压力施加到在基板上生长的外延膜，并在低于外延膜的熔融温度的温度下加热外延膜。通过对外延膜施加压力，可以减轻外延膜的晶格应变，因此外延膜的缺陷密度也降低。

8. 发明申请

US20170022065A1 GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS 审中-公开
标题翻译：石墨和六角形硼砂平面图及相关方法
公开(公告)号：US20170022065A1
公开(公告)日：2017-01-26
申请号：US15052794
申请日：2016-02-24
申请人： Chien-Min Sung
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C01B31/04 , C23C14/06
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译：公开了主要由sp2键合的原子制成的石墨烯层及相关方法。一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。石墨膜形成为基本上没有晶格缺陷。

9. 发明申请

US20150079352A1 GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS 审中-公开
标题翻译：石墨和六角形硼砂平面图及相关方法
公开(公告)号：US20150079352A1
公开(公告)日：2015-03-19
申请号：US14455335
申请日：2014-08-08
申请人： Chien-Min Sung
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C01B31/04
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译：公开了主要由sp2键合的原子制成的石墨烯层及相关方法。一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。石墨膜形成为基本上没有晶格缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式