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1. 发明授权

US6151203A Connectors for an electrostatic chuck and combination thereof 有权
标题翻译：静电吸盘连接器及其组合
公开(公告)号：US6151203A
公开(公告)日：2000-11-21
申请号：US212000
申请日：1998-12-14
申请人： Shamouil Shamouilian , Ananda Kumar , Arnold Kholodenko , Dennis S. Grimard , Liang Guo Wang , Gerhard Schneider , Michael G. Chafin , Semyon Kats , Alexander Veytser , Senh Thach
发明人： Shamouil Shamouilian , Ananda Kumar , Arnold Kholodenko , Dennis S. Grimard , Liang Guo Wang , Gerhard Schneider , Michael G. Chafin , Semyon Kats , Alexander Veytser , Senh Thach
IPC分类号： H01L21/68 , H01L21/683 , H01R13/05 , H02N13/00
CPC分类号： H01L21/6833 , H02N13/00 , H01R13/052
摘要： A semiconductor wafer chuck for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system including a connector connecting DC chucking voltage and RF biasing power to an electrode embedded in the body of the chuck. The connector for the chuck includes two or more members joined by resilient banana connections. The connector may be adapted for use as a high temperature connector for an electrostatic chuck operated at an elevated temperature and such connector includes a thermal impedance for reducing the heat transferred from the chuck to the bottom of the connector.
摘要翻译：一种用于在半导体晶片处理系统中保持半导体晶片的半导体晶片卡盘，该半导体晶片处理系统包括将DC夹持电压和RF偏压功率连接到嵌入在卡盘的主体中的电极的连接器。用于卡盘的连接器包括通过弹性香蕉连接件连接的两个或多个构件。连接器可以适用于用于在高温下操作的静电卡盘的高温连接器，并且这种连接器包括用于减少从卡盘传递到连接器底部的热量的热阻抗。

2. 发明授权

US06736668B1 High temperature electrical connector 失效
标题翻译：高温电连接器
公开(公告)号：US06736668B1
公开(公告)日：2004-05-18
申请号：US09663864
申请日：2000-09-15
申请人： Arnold V. Kholodenko , Senh Thach , Wing L. Cheng , Alvin Lau , Dennis S. Grimard
发明人： Arnold V. Kholodenko , Senh Thach , Wing L. Cheng , Alvin Lau , Dennis S. Grimard
IPC分类号： H01R1300
CPC分类号： H01R13/533 , H01R2201/24
摘要： An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.
摘要翻译：电耦合器包括具有上端和下端的内连接器，限定内连接器的绝缘外连接器元件和设置在内连接器的上端上的导热凸缘和用于传导来自电导体的热的外连接器。电导体可以用于半导体晶片处理的衬底支撑件中。衬底支撑件包括具有嵌入其中的电极的卡盘体，以及耦合到电极并从所述卡盘体突出的上部阳连接器。具有电耦合器的冷却板位于卡盘主体附近。上部阳连接器插入电耦合器中，并且耦合到电耦合器的下部的电源卡住并将晶片偏置到所述卡盘的上表面。导热凸缘传导和传递从上阳连接器和电耦合器产生的热量到冷却板。

3. 发明授权

US06795292B2 Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber 失效
标题翻译：用于调节半导体晶片处理室中的处理套件的温度的装置
公开(公告)号：US06795292B2
公开(公告)日：2004-09-21
申请号：US09861984
申请日：2001-05-15
申请人： Dennis Grimard , Arnold Kholodenko , Alex Veytser , Senh Thach , Wing Cheng
发明人： Dennis Grimard , Arnold Kholodenko , Alex Veytser , Senh Thach , Wing Cheng
IPC分类号： H01G2300
CPC分类号： H01L21/67109 , H01L21/67103
摘要： An apparatus for reducing by-product formation in a semiconductor wafer-processing chamber. In a first embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange. A collar is disposed over the peripheral flange defining a first gap therebetween, and circumscribes the chuck. A heater element is embedded within the collar and adapted for connection to a power source. In a second embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, and a collar having a heater element embedded therein. The collar is disposed over the peripheral flange to define a gap therebetween, and circumscribes the chuck. Moreover, a pedestal having a gas delivery system therein is disposed below the chuck and collar. In a third embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, a collar, and a waste ring having a heater element embedded therein. The waste ring is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. The collar is chucked to the waste ring, and the waste ring is chucked to a pedestal support. Moreover, the waste ring and pedestal each have a gas delivery system therein for regulating the temperature of the collar.
摘要翻译：一种用于减少半导体晶片处理室中副产物形成的装置。在第一实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘。套环设置在周边凸缘之上，限定了它们之间的第一间隙，并限制卡盘。加热器元件嵌入在轴环内并且适于连接到电源。在第二实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘以及嵌入其中的加热器元件的套环。套环设置在周边凸缘上方以在其间形成间隙并限制卡盘。此外，其中具有气体输送系统的基座设置在卡盘和轴环的下方。在第三实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘，套环和具有嵌入其中的加热器元件的废料环的卡盘。废环设置在周边凸缘之上，限定了它们之间的间隙，并且围绕卡盘。将衣领卡在废物环上，将废物环卡在基座支架上。此外，废环和底座各自具有用于调节套环温度的气体输送系统。

4. 发明授权

US06572814B2 Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas 失效
标题翻译：制造具有用于分配传热气体的小直径气体分配端口的半导体晶片支撑卡盘装置的方法
公开(公告)号：US06572814B2
公开(公告)日：2003-06-03
申请号：US09866353
申请日：2001-05-24
申请人： Shamouil Shamoulian , Arnold Kholodenko , Senh Thach , Wing Cheng
发明人： Shamouil Shamoulian , Arnold Kholodenko , Senh Thach , Wing Cheng
IPC分类号： B22F704
CPC分类号： H02N13/00 , Y10T29/49149
摘要： A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.
摘要翻译：一种制造具有第一烧结层和第二烧结层的半导体晶片支撑卡盘装置的方法。该方法包括以下步骤：提供具有多个气体分配端口的第一烧结层，并提供具有多个凹槽的第二烧结层。第一烧结层堆叠在第二烧结层的顶部，在第一烧结层和第二烧结层之间设置扩散接合层。然后，堆叠的第一和第二烧结层重新烧结，使得扩散接合层将第一和第二烧结层与第二烧结层结合在一起形成半导体晶片支撑装置。

5. 发明申请

US20050016684A1 Process kit for erosion resistance enhancement 审中-公开
标题翻译：防腐蚀加工工艺套件
公开(公告)号：US20050016684A1
公开(公告)日：2005-01-27
申请号：US10627213
申请日：2003-07-25
申请人： Jennifer Sun , Ananda Kumar , Senh Thach
发明人： Jennifer Sun , Ananda Kumar , Senh Thach
IPC分类号： H01L21/3065 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32477 , H01J37/32642
摘要： A process kit is described that resists plasma erosion, preserves the spatial uniformity of plasma properties, reduces particle generation in the chamber, and significantly enhances the lifetime of the process kit. A layer of polymer material covers the top surface of the process kit. The polymer material is fluorocarbon-based and not reactive with the species in the plasma. The polymer material not only protects the process kit from progressive erosion, but also prevents the generation of particles in the chamber. The polymer material has similar permittivity to that of the process kit and therefore maintains the spatial uniformity of plasma properties, e.g., etch rate, near the wafer perimeter. The thickness of the layer is controlled between 0.5 and 1.5 mm such that the difference between its coefficient of thermal expansion and that of the process kit will not cause the layer to peel off the process kit's top surface.
摘要翻译：描述了一种防止等离子体侵蚀的过程套件，保持了等离子体性质的空间均匀性，减少了腔室中的颗粒产生，并显着提高了工艺套件的使用寿命。一层聚合物材料覆盖了工艺套件的顶面。聚合物材料是基于碳氟化合物的，并且不与等离子体中的物质反应。聚合物材料不仅可保护工艺套件免受逐渐侵蚀，还可防止腔室中产生颗粒。聚合物材料具有与处理试剂盒相似的介电常数，因此在晶片周边附近保持等离子体特性（例如蚀刻速率）的空间均匀性。将该层的厚度控制在0.5至1.5mm之间，使得其热膨胀系数与处理套件的热导率差不会导致该层从工艺套件的顶部表面剥离。

6. 发明申请

US20080213496A1 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 审中-公开
标题翻译：用保护性钇涂层涂覆半导体处理装置的方法
公开(公告)号：US20080213496A1
公开(公告)日：2008-09-04
申请号：US11890221
申请日：2007-08-02
申请人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C23C4/10 , C23C14/34
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

7. 发明申请

US20170213754A1 ELECTROSTATIC CHUCK WITH EXTERNAL FLOW ADJUSTMENTS FOR IMPROVED TEMPERATURE DISTRIBUTION 审中-公开
公开(公告)号：US20170213754A1
公开(公告)日：2017-07-27
申请号：US15481183
申请日：2017-04-06
申请人： Matthew J. Busche , Vijay D. Parkhe , Wendell Boyd, JR. , Senh Thach , Konstantin Makhratchev , Masanori Ono
发明人： Matthew J. Busche , Vijay D. Parkhe , Wendell Boyd, JR. , Senh Thach , Konstantin Makhratchev , Masanori Ono
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6833 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H05K7/20218
摘要： An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, a method for adjusting coolant flow in an electrostatic chuck includes heating a dielectric puck, the dielectric puck being for electrostatically gripping a silicon wafer. Heat is detected at a plurality of locations on a top surface of the dielectric puck, the locations each being thermally coupled to at least one of a plurality of coolant chambers of the electrostatic chuck. A plurality of valves are adjusted to control coolant flow into the coolant chambers based on the detected heat.

8. 发明申请

US20090162647A1 Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components 有权
标题翻译：防腐蚀钇含有金属氧化涂层，用于等离子体室部件
公开(公告)号：US20090162647A1
公开(公告)日：2009-06-25
申请号：US12004907
申请日：2007-12-21
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B32B15/04 , B05D3/00
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.
摘要翻译：描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。氧化物涂层的结构本质上是柱状的。构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

9. 发明申请

US20090056745A1 WET CLEAN PROCESS FOR RECOVERY OF ANODIZED CHAMBER PARTS 有权
标题翻译：用于回收阳极室部件的净化过程
公开(公告)号：US20090056745A1
公开(公告)日：2009-03-05
申请号：US11845620
申请日：2007-08-27
申请人： JENNIFER Y. SUN , Senh Thach , Xi Zhu , Li Xu , Anisul Khan
发明人： JENNIFER Y. SUN , Senh Thach , Xi Zhu , Li Xu , Anisul Khan
IPC分类号： C23G1/02
CPC分类号： C23C16/4407 , C11D7/08 , C11D7/10 , C11D11/0047 , C11D11/0064
摘要： A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.
摘要翻译：当在蚀刻反应器中暴露于含氟等离子体时，用于回收阳极氧化铝部件的清洁方法是特别有用的。将该部分浸渍在氟化物酸如氟化铵的搅拌溶液中，其将氟化铝转化为可溶性氟化物。该部件在水中冲洗。清洁的阳极氧化的孔可以通过将部件浸没在热的搅拌去离子水中来重新密封。

10. 发明授权

US06949203B2 System level in-situ integrated dielectric etch process particularly useful for copper dual damascene 失效
标题翻译：系统级原位集成电介质蚀刻工艺特别适用于铜双镶嵌
公开(公告)号：US06949203B2
公开(公告)日：2005-09-27
申请号：US10379439
申请日：2003-03-03
申请人： Chang-Lin Hsieh , Diana Xiaobing Ma , Brian Sy Yuan Shieh , Gerald Zheyao Yin , Jennifer Sun , Senh Thach , Lee Luo , Claes H. Bjorkman
发明人： Chang-Lin Hsieh , Diana Xiaobing Ma , Brian Sy Yuan Shieh , Gerald Zheyao Yin , Jennifer Sun , Senh Thach , Lee Luo , Claes H. Bjorkman
IPC分类号： H01L21/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76832 , H01J37/32458 , H01L21/31116 , H01L21/31138 , H01L21/67184 , H01L21/67207 , H01L21/67219 , H01L21/6723 , H01L21/76802 , H01L21/76804 , H01L21/76807
摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.
摘要翻译：在具有第一和第二蚀刻室的多室衬底处理系统中执行的集成原位蚀刻工艺。在一个实施例中，第一室包括已经被粗糙化至少100个的内表面，而第二室包括具有小于约32μm的粗糙度的内表面， / SUB>。该方法包括在向下的方向上转移其上形成有图案的光致抗蚀剂掩模，电介质层，阻挡层和衬底中的特征的衬底，以接触第一室，其中介电层被刻蚀在鼓励聚合物的过程中在室的粗糙内表面上形成。然后在真空条件下将衬底从第一室转移到第二室，并且在第二室中暴露于诸如氧的反应性等离子体以剥离沉积在衬底上的光致抗蚀剂掩模。在光致抗蚀剂掩模被剥离之后，通过阻止在第二室的相对光滑的内表面上聚合物形成的工艺，阻挡层被蚀刻到多室基板处理系统的第二室中以接触的特征。所有三个蚀刻步骤都是在系统级原位工艺中进行的，因此基板不会在台阶之间暴露于环境中。在一些实施例中，第一室的内表面具有在100和200之间的粗糙度，而在其它实施例中，第一室的内表面的粗糙度在110和160之间， SUB>。

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