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1. 发明授权

US07645689B2 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 失效
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US07645689B2
公开(公告)日：2010-01-12
申请号：US11812868
申请日：2007-06-22
申请人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
发明人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
IPC分类号： H01L21/20
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

2. 发明授权

US07297988B2 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US07297988B2
公开(公告)日：2007-11-20
申请号：US11319343
申请日：2005-12-28
申请人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
发明人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

3. 发明授权

US07250633B2 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 有权
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US07250633B2
公开(公告)日：2007-07-31
申请号：US11220844
申请日：2005-09-08
申请人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
发明人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
IPC分类号： H01L27/15
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

4. 发明授权

US07183579B2 Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same 失效
标题翻译：基于氮化镓（GaN）的半导体发光二极管及其制造方法
公开(公告)号：US07183579B2
公开(公告)日：2007-02-27
申请号：US10811808
申请日：2004-03-30
申请人： Seung Wan Chae , Suk Kil Yoon
发明人： Seung Wan Chae , Suk Kil Yoon
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/32 , H01L33/40
摘要： Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
摘要翻译：公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层，形成在上包层上，由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。合金层具有高透光率，形成欧姆接触，从而降低接触电阻。

5. 发明授权

US07235820B2 Group III-nitride light emitting device 失效
标题翻译： III族氮化物发光器件
公开(公告)号：US07235820B2
公开(公告)日：2007-06-26
申请号：US11315150
申请日：2005-12-23
申请人： Hyun Wook Shim , Suk Kil Yoon , Jae Chul Ro , Seung Wan Chae
发明人： Hyun Wook Shim , Suk Kil Yoon , Jae Chul Ro , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
摘要翻译：本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层包层反射金属层可以是Ag层或Al层。

6. 发明授权

US08829548B2 Light emitting device package and fabrication method thereof 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US08829548B2
公开(公告)日：2014-09-09
申请号：US13554026
申请日：2012-07-20
申请人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译：发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

7. 发明申请

US20130020598A1 LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US20130020598A1
公开(公告)日：2013-01-24
申请号：US13554026
申请日：2012-07-20
申请人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号： H01L33/50 , H01L33/62
CPC分类号： H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译：发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

8. 发明授权

US08867438B2 Data transmission apparatus and method for a high-speed packet access system 有权
标题翻译：一种用于高速分组接入系统的数据传输装置和方法
公开(公告)号：US08867438B2
公开(公告)日：2014-10-21
申请号：US13002239
申请日：2009-06-30
申请人： Oh Seok Kim , Byung Duck Cho , Young Ky Kim , Yong Duk Cho , Jae Hawk Lee , Young Yong Lee , Jong Han Kim , Seung Wan Chae
发明人： Oh Seok Kim , Byung Duck Cho , Young Ky Kim , Yong Duk Cho , Jae Hawk Lee , Young Yong Lee , Jong Han Kim , Seung Wan Chae
IPC分类号： H04W4/00 , H04L12/801 , H04W52/28 , H04L12/835 , H04W28/14
CPC分类号： H04L47/10 , H04L47/14 , H04L47/30 , H04W28/14 , H04W52/286
摘要： A data transmission method for a high-speed packet access system includes: sending, by a user equipment, packet data containing scheduling information having size information of a packet buffer through an uplink channel to a base station, and sending quality indicator information and acknowledgement information through another uplink channel to the base station; determining, by the base station, the value of a turbo mode flag by comparing amounts of data stored in the packet buffer of the user equipment and a packet buffer of the base station respectively with preset thresholds; and deactivating, by the user equipment when the turbo mode flag of an order message contained in received control data, packet data reception and control data transmission, and redirecting transmit power of a specified transmitter to a packet data transmitter to increase transmit power of the packet data transmitter for faster packet data upload.
摘要翻译：一种用于高速分组接入系统的数据传输方法包括：通过用户设备将包含具有通过上行链路信道的分组缓冲器的大小信息的调度信息的分组数据发送给基站，并且发送质量指示符信息和确认信息通过到基站的另一上行链路信道; 通过将存储在用户设备的分组缓冲器中的数据与基站的分组缓冲器分别与预设阈值进行比较，来确定turbo模式标志的值; 并且当所接收的控制数据中包含的订购消息的turbo模式标志，分组数据接收和控制数据传输以及将指定发射机的发射功率重定向到分组数据发射机以增加分组的发射功率时，由用户设备停用数据发送器，用于更快的数据包数据上传。

9. 发明申请

US20140198528A1 WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：用于发光二极管的波长转换芯片及其制造方法
公开(公告)号：US20140198528A1
公开(公告)日：2014-07-17
申请号：US14239100
申请日：2011-08-17
申请人： Yong Tae KIim , Tomio Inoue , Je Won Kim , Tsuyoshi Tsutsui , Jong Ho Lee , Seung Wan Chae
发明人： Yong Tae KIim , Tomio Inoue , Je Won Kim , Tsuyoshi Tsutsui , Jong Ho Lee , Seung Wan Chae
IPC分类号： H01L33/50 , F21V8/00
CPC分类号： G02B6/0073 , H01L33/486 , H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.
摘要翻译：提供一种制造波长转换LED芯片的方法，包括将多个LED芯片附接到临时支撑板的上表面的芯片对准区域，在各个LED芯片的电极上形成导电凸块，形成含磷光体的树脂封装部分在芯片取向区域中覆盖导电凸块，抛光含荧光体的树脂封装部分，通过在LED芯片之间切割提供的含磷树脂封装部分，形成波长转换的LED芯片，波长转换的LED芯片包括由含荧光体的树脂封装部分形成的波长转换层，并形成在波长转换的LED芯片的侧面和上表面上，并从波长转换的LED芯片上去除临时支撑板。

10. 发明申请

US20140183589A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY 审中-公开
标题翻译：制造半导体发光元件和制造半导体发光元件的方法
公开(公告)号：US20140183589A1
公开(公告)日：2014-07-03
申请号：US14237515
申请日：2011-08-09
申请人： Jae Ho Han , Sung Tae Kim , Seung Wan Chae , Jong Ho Lee , Je Won Kim
发明人： Jae Ho Han , Sung Tae Kim , Seung Wan Chae , Jong Ho Lee , Je Won Kim
IPC分类号： H01L33/00 , H01L33/60
CPC分类号： H01L33/005 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L33/0095 , H01L33/46 , H01L33/60
摘要： There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.
摘要翻译：提供一种制造半导体发光器件和由此制造的半导体发光器件的方法。根据示例性实施例，制造半导体发光器件的方法包括：通过在衬底的第一主表面上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构所述基板具有彼此相对的第一和第二主表面; 在所述基板的所述第二主表面上形成反射膜，所述反射膜包括至少一个激光吸收区域; 以及通过从对应于所述激光吸收区域的所述发光结构的顶部的一部分照射激光而将所述发光结构和所述衬底分离成器件单元的划线处理到所述发光结构和所述衬底。

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