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    • 1. 发明授权
    • Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
    • 具有ESD保护能力的氮化镓系发光器件及其制造方法
    • US07645689B2
    • 2010-01-12
    • US11812868
    • 2007-06-22
    • Jun Ho SeoSuk Kil YoonSeung Wan Chae
    • Jun Ho SeoSuk Kil YoonSeung Wan Chae
    • H01L21/20
    • H01L33/04H01L27/0248H01L27/15H01L33/32H01L33/38H01L33/44H01L2933/0016
    • A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
    • 公开了一种氮化镓基发光器件及其制造方法。 发光器件包括依次层叠在衬底上的n型GaN基覆盖层,有源层,p型GaN基覆盖层和p侧电极。 该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。 每个MIM型隧道结包括形成在GaN基覆层上的下金属层,以便接触n型GaN基覆层,形成在下金属层上的绝缘膜和形成的上金属层 在绝缘膜上。 该器件可防止反向ESD电压,从而可以提高对反向ESD电压的容限,从而提高器件的可靠性。
    • 3. 发明授权
    • Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
    • 具有ESD保护能力的氮化镓系发光器件及其制造方法
    • US07250633B2
    • 2007-07-31
    • US11220844
    • 2005-09-08
    • Jun Ho SeoSuk Kil YoonSeung Wan Chae
    • Jun Ho SeoSuk Kil YoonSeung Wan Chae
    • H01L27/15
    • H01L33/04H01L27/0248H01L27/15H01L33/32H01L33/38H01L33/44H01L2933/0016
    • A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
    • 公开了一种氮化镓基发光器件及其制造方法。 发光器件包括依次层叠在衬底上的n型GaN基覆盖层,有源层,p型GaN基覆盖层和p侧电极。 该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。 每个MIM型隧道结包括形成在GaN基覆层上的下金属层,以便接触n型GaN基覆层,形成在下金属层上的绝缘膜和形成的上金属层 在绝缘膜上。 该器件可防止反向ESD电压,从而可以提高对反向ESD电压的容限,从而提高器件的可靠性。
    • 4. 发明授权
    • Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same
    • 基于氮化镓(GaN)的半导体发光二极管及其制造方法
    • US07183579B2
    • 2007-02-27
    • US10811808
    • 2004-03-30
    • Seung Wan ChaeSuk Kil Yoon
    • Seung Wan ChaeSuk Kil Yoon
    • H01L27/15
    • H01L33/14H01L33/32H01L33/40
    • Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
    • 公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层,形成在上包层上,由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。 合金层具有高透光率,形成欧姆接触,从而降低接触电阻。