专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140198528A1 WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：用于发光二极管的波长转换芯片及其制造方法
公开(公告)号：US20140198528A1
公开(公告)日：2014-07-17
申请号：US14239100
申请日：2011-08-17
申请人： Yong Tae KIim , Tomio Inoue , Je Won Kim , Tsuyoshi Tsutsui , Jong Ho Lee , Seung Wan Chae
发明人： Yong Tae KIim , Tomio Inoue , Je Won Kim , Tsuyoshi Tsutsui , Jong Ho Lee , Seung Wan Chae
IPC分类号： H01L33/50 , F21V8/00
CPC分类号： G02B6/0073 , H01L33/486 , H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.
摘要翻译：提供一种制造波长转换LED芯片的方法，包括将多个LED芯片附接到临时支撑板的上表面的芯片对准区域，在各个LED芯片的电极上形成导电凸块，形成含磷光体的树脂封装部分在芯片取向区域中覆盖导电凸块，抛光含荧光体的树脂封装部分，通过在LED芯片之间切割提供的含磷树脂封装部分，形成波长转换的LED芯片，波长转换的LED芯片包括由含荧光体的树脂封装部分形成的波长转换层，并形成在波长转换的LED芯片的侧面和上表面上，并从波长转换的LED芯片上去除临时支撑板。

2. 发明申请

US20120153330A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20120153330A1
公开(公告)日：2012-06-21
申请号：US13313402
申请日：2011-12-07
申请人： Tsuyoshi TSUTSUI
发明人： Tsuyoshi TSUTSUI
IPC分类号： H01L33/50 , H01L33/60
CPC分类号： H01L33/46 , H01L33/505
摘要： A light emitting device and a method of manufacturing thereof are disclosed. The light emitting device includes a light emitting element having first and second main surfaces opposed to each other; a wavelength converting part formed on the first main surface of the light emitting element; first and second terminals formed on the second main surface of the light emitting element; and a reflecting part formed to cover at least sides of the light emitting element and sides of the wavelength converting part. The light emitting device in which the color dispersion of white light is minimized with respect to the emitting direction of light, whereby the white light exhibits uniform characteristics and further, light emitting efficiency is improved is obtained.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括具有彼此相对的第一和第二主表面的发光元件; 形成在发光元件的第一主表面上的波长转换部; 形成在发光元件的第二主表面上的第一和第二端子; 以及形成为覆盖所述发光元件的至少一侧和所述波长转换部的侧面的反射部。其中白光的色散相对于光的发射方向最小化的发光器件，由此白光表现出均匀的特性，并且进一步提高了发光效率。

3. 发明授权

US08124985B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08124985B2
公开(公告)日：2012-02-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

4. 发明授权

US06956242B2 Semiconductor light-emitting device having a semiconductor light-emitting element mounted on a substrate with anisotropically conductive adhesive interposed therebetween 有权
标题翻译：具有安装在基板上的半导体发光元件的半导体发光器件具有各向异性导电粘合剂
公开(公告)号：US06956242B2
公开(公告)日：2005-10-18
申请号：US10610754
申请日：2003-07-02
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L33/62 , H01L33/00
CPC分类号： H01L33/62 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/83192 , H01L2224/838 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/0781 , H01L2924/07811 , H01L2924/12041 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor light-emitting element 1 is mounted on a substrate 2 with an anisotropically conductive adhesive 3, which has electrically conductive particles 32 dispersion-mixed with a thermosetting resin 31, laid between a pair of electrodes 11 and 11′ formed on the same surface of the semiconductor light-emitting element and wiring electrodes 21 and 21′ formed on the substrate 2. Depressions 22 and 22′ are formed in the portion of the surface of the wiring electrodes 21 and 21′ facing the semiconductor light-emitting element 1 so that the electrically conductive particles 32 are stably present between the pair of electrodes 11 and 11′ and the wiring electrodes 21 and 21′.
摘要翻译：将半导体发光元件1安装在具有导电性粒子32的各向异性导电性粘合剂3的基板2上，该导电性粒子32与形成在同一表面上的一对电极11和11'之间的热固性树脂31分散混合的半导体发光元件和形成在基板2上的布线电极21和21'。在面对半导体发光元件1的布线电极21和21'的表面的部分中形成凹陷22和22'，使得导电颗粒32稳定地存在于一对电极11和11'之间，并且布线电极21和21'。

5. 发明授权

US06258619B1 Fabrication of semiconductor light emitting device 失效
标题翻译：半导体发光器件的制造
公开(公告)号：US06258619B1
公开(公告)日：2001-07-10
申请号：US09337396
申请日：1999-06-22
申请人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers are constituted by the n-type layer and the p-type layer on the substrate. A light emitting layer is formed together with the n-type and p-type layers in the semiconductor overlying layers to emit light. At least one of the n-type layer and the p-type layer is formed by three or more overlying sublayers including a sublayer of AlyGa1-yN (0
摘要翻译：半导体发光器件包括衬底，由形成在衬底上的氮化镓基化合物半导体形成的n型层和形成在衬底上的由氮化镓基化合物半导体形成的p型层。半导体覆盖层由衬底上的n型层和p型层构成。在半导体覆盖层中与n型和p型层一起形成发光层以发光。 n型层和p型层中的至少一层由包括AlyGa1-yN（0

6. 发明授权

US6156584A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US6156584A
公开(公告)日：2000-12-05
申请号：US48110
申请日：1998-03-26
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21/301 , H01L27/12 , H01L33/32 , H01L33/36 , H01S5/02 , H01S5/323 , H01L21/302
CPC分类号： H01S5/0201 , H01L33/0095 , H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first conductivity type of the semiconductor layer laminate, and on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching the semiconductor layer laminate, in association with the individual chips. Then, the semiconductor layer laminate is etched at boundary portions between the chips to expose the substrate, and the substrate is broken at the exposed portions into the chips. As the semiconductor layer laminate is etched out at the boundary portions between the chips before breaking the wafer, breaking can be facilitated without damaging the light emitting portions of the semiconductor layer laminate. This helps provide high-performance semiconductor light emitting devices.
摘要翻译：沉积在用于形成多个发光器件芯片的晶片状衬底上的是具有与衬底不同的性质的半导体层层压体。然后，电极设置在第一导电类型的半导体层层叠体的顶部半导体层上并与之连接，并与第二导电类型的半导体层电连接，通过局部蚀刻半导体层层叠体，与个别芯片相关联。然后，在芯片之间的边界部分处蚀刻半导体层层叠体，使基板露出，使基板在露出部分断裂成芯片。由于半导体层层叠体在断裂晶片之前在芯片之间的边界部分被蚀刻掉，所以可以在不破坏半导体层叠层的发光部分的情况下进行破坏。这有助于提供高性能半导体发光器件。

7. 发明授权

US6054716A Semiconductor light emitting device having a protecting device 失效
标题翻译：具有保护装置的半导体发光器件
公开(公告)号：US6054716A
公开(公告)日：2000-04-25
申请号：US3145
申请日：1998-01-06
申请人： Masayuki Sonobe , Tsuyoshi Tsutsui , Shunji Nakata , Norikazu Itoh , Shinji Isokawa , Hidekazu Toda
发明人： Masayuki Sonobe , Tsuyoshi Tsutsui , Shunji Nakata , Norikazu Itoh , Shinji Isokawa , Hidekazu Toda
IPC分类号： H01L25/16 , H01L33/62 , H05B33/08 , H01L27/15
CPC分类号： H05B33/0821 , H01L25/167 , H05B33/089 , H01L2224/0401 , H01L2224/05555 , H01L2224/0603 , H01L2224/16145 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/01079 , H01L2924/12041 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01L33/62 , Y02B20/341
摘要： A semiconductor light emitting device incorporates therein with (a) a light emitting portion formed by semiconductor overlying layers including a first conductivity layer and a second conductivity layer in order to a light emitting layer, and (b) a protecting element portion provided in electrical connection between said first conductivity type layer and said second conductivity type layer so that said light emitting portion is protected against at least a reverse voltage applied to said light emitting portion. The light emitting portion and the protecting element portion can be formed by separate chips or in one chip having the both. They are formed into a lamp-type or chip-type light emitting device. The incorporation of the protecting element increase the reverse-voltage resistance for a compound semiconductor, such as galium-itride or the like, that is less resistive to reverse voltages applied. If a zener diode is employed as a protecting element, the protection is also available against high forward voltages. Therefore, it is possible to prevent against damages due to static electricity even during mafacture stages.
摘要翻译：一种半导体发光器件，其中包含（a）由半导体覆盖层形成的发光部分，该发光部分包括第一导电层和第二导电层，以便发光层，以及（b）以电连接形式设置的保护元件部分在所述第一导电类型层和所述第二导电类型层之间，使得所述发光部分至少受到施加到所述发光部分的反向电压的保护。发光部分和保护元件部分可以由单独的芯片或具有这两者的一个芯片形成。它们形成为灯型或芯片型发光器件。保护元件的结合增加了对施加的反向电压较不敏感的化合物半导体（例如galium-itride等）的反向电压电阻。如果使用齐纳二极管作为保护元件，则保护也可用于高正向电压。因此，即使在制膜阶段，也可以防止由静电导致的损坏。

8. 发明授权

US5594260A Photoelectric converter with photoelectric conversion devices mounted separately from wiring boards 失效
标题翻译：光电转换器与光电转换装置分开安装
公开(公告)号：US5594260A
公开(公告)日：1997-01-14
申请号：US251788
申请日：1994-05-31
申请人： Tsuyoshi Tsutsui , Munekazu Tsujikawa
发明人： Tsuyoshi Tsutsui , Munekazu Tsujikawa
IPC分类号： B41J2/45 , H01L25/075 , H01L25/16 , H01L33/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/167 , H01L2224/45144 , H01L2224/48137 , H01L2224/49175 , H01L2924/09701
摘要： An array of printed wiring boards and a linear array of photoelectric conversion devices are arranged on one support board. The printed wiring board array is separated from the photoelectric conversion device array.
摘要翻译：印刷电路板阵列和光电转换装置的线性阵列布置在一个支撑板上。印刷线路板阵列与光电转换装置阵列分离。

9. 发明授权

US08753908B2 Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08753908B2
公开(公告)日：2014-06-17
申请号：US13541248
申请日：2012-07-03
申请人： Tsuyoshi Tsutsui , Shin Kun Kim , Seong Jae Hong , Il Woo Park
发明人： Tsuyoshi Tsutsui , Shin Kun Kim , Seong Jae Hong , Il Woo Park
IPC分类号： H01L33/50
CPC分类号： H01L33/005 , H01L33/0095 , H01L2933/0041
摘要： There are disclosed a method of manufacturing a semiconductor light emitting device and a paste application apparatus. The method includes preparing a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; disposing a mask including an opening exposing a part of the light emitting structure on the light emitting structure; applying a paste including a wavelength conversion material to the light emitting structure through the opening of the mask, by using a pressure means; and planarizing the applied paste by using a roller.
摘要翻译：公开了一种制造半导体发光器件和糊料施加装置的方法。该方法包括制备包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 在所述发光结构上设置包括露出所述发光结构的一部分的开口的掩模; 通过使用压力装置，通过所述掩模的开口将包含波长转换材料的浆料施加到所述发光结构; 并通过使用辊平坦化涂敷的糊剂。

10. 发明申请

US20130011948A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND PASTE APPLICATION APPARATUS USED FOR THE SAME 有权
标题翻译：制造半导体发光装置的方法和用于其的糊剂应用装置
公开(公告)号：US20130011948A1
公开(公告)日：2013-01-10
申请号：US13541248
申请日：2012-07-03
申请人： Tsuyoshi TSUTSUI , Shin Kun KIM , Seong Jae HONG , Il Woo PARK
发明人： Tsuyoshi TSUTSUI , Shin Kun KIM , Seong Jae HONG , Il Woo PARK
IPC分类号： H01L33/08 , B05C11/02
CPC分类号： H01L33/005 , H01L33/0095 , H01L2933/0041
摘要： There are disclosed a method of manufacturing a semiconductor light emitting device and a paste application apparatus. The method includes preparing a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; disposing a mask including an opening exposing a part of the light emitting structure on the light emitting structure; applying a paste including a wavelength conversion material to the light emitting structure through the opening of the mask, by using a pressure means; and planarizing the applied paste by using a roller.
摘要翻译：公开了一种制造半导体发光器件和糊料施加装置的方法。该方法包括制备包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 在所述发光结构上设置包括露出所述发光结构的一部分的开口的掩模; 通过使用压力装置，通过所述掩模的开口将包含波长转换材料的浆料施加到所述发光结构; 并通过使用辊平坦化涂敷的糊剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式