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1. 发明授权

US07838086B2 Magnetic enhancement for mechanical confinement of plasma 有权
标题翻译：磁力增强用于等离子体的机械约束
公开(公告)号：US07838086B2
公开(公告)日：2010-11-23
申请号：US12252887
申请日：2008-10-16
申请人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
发明人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
IPC分类号： H05H1/02 , C23C16/00
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.
摘要翻译：提供了一种处理基板的方法。将基板放置在处理室中。从气体源向处理室提供气体。从处理室中的气体产生等离子体。气体流过与至少一个限制环相邻的间隙，以提供等离子体的物理限制。提供等离子体的磁限制以增强等离子体的物理限制。

2. 发明授权

US07455748B2 Magnetic enhancement for mechanical confinement of plasma 有权
标题翻译：磁力增强用于等离子体的机械约束
公开(公告)号：US07455748B2
公开(公告)日：2008-11-25
申请号：US10600191
申请日：2003-06-20
申请人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
发明人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

3. 发明申请

US20090041951A1 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 有权
标题翻译：机械等离子体磁化强化
公开(公告)号：US20090041951A1
公开(公告)日：2009-02-12
申请号：US12252887
申请日：2008-10-16
申请人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
发明人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
IPC分类号： H05H1/10
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.
摘要翻译：提供了一种处理基板的方法。将基板放置在处理室中。从气体源向处理室提供气体。从处理室中的气体产生等离子体。气体流过与至少一个限制环相邻的间隙，以提供等离子体的物理限制。提供等离子体的磁限制以增强等离子体的物理限制。

4. 发明申请

US20110281435A1 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS 有权
标题翻译：快速开关等离子体加工设备
公开(公告)号：US20110281435A1
公开(公告)日：2011-11-17
申请号：US13189416
申请日：2011-07-22
申请人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
发明人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
IPC分类号： H01L21/311
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

5. 发明授权

US08673785B2 Gas distribution system having fast gas switching capabilities 有权
标题翻译：气体分配系统具有快速的气体切换能力
公开(公告)号：US08673785B2
公开(公告)日：2014-03-18
申请号：US12716918
申请日：2010-03-03
申请人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
发明人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

6. 发明申请

US20100159707A1 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 有权
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：US20100159707A1
公开(公告)日：2010-06-24
申请号：US12716918
申请日：2010-03-03
申请人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
发明人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
IPC分类号： H01L21/3065 , H01L21/312
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

7. 发明授权

US07708859B2 Gas distribution system having fast gas switching capabilities 有权
标题翻译：气体分配系统具有快速的气体切换能力
公开(公告)号：US07708859B2
公开(公告)日：2010-05-04
申请号：US10835175
申请日：2004-04-30
申请人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
发明人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
IPC分类号： C23C16/00 , C23C14/00 , C23F1/00 , H01L21/306 , H01L21/302 , H01L21/461 , C25B11/00 , C25B13/00
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以所需的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

8. 发明授权

US08343876B2 Fast gas switching plasma processing apparatus 有权
标题翻译：快速气体开关等离子体处理装置
公开(公告)号：US08343876B2
公开(公告)日：2013-01-01
申请号：US13189416
申请日：2011-07-22
申请人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
发明人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
IPC分类号： H01L21/302
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

9. 发明申请

US20110024046A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。下电极也被限定为支持暴露于等离子体的半导体晶片。上电极设置在下电极的上方并与之隔开的关系。上电极由掺杂的半导体材料限定。上电极内的掺杂浓度从上电极的中心向周边径向变化。上电极的电位影响室内等离子体的电位。

10. 发明申请

US20080006205A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20080006205A1
公开(公告)日：2008-01-10
申请号：US11456545
申请日：2006-07-10
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

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