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    • 1. 发明申请
    • PATTERN FORMING METHOD
    • 图案形成方法
    • US20100304568A1
    • 2010-12-02
    • US12752684
    • 2010-04-01
    • Seiro MIYOSHIYasunobu KaiKentaro MatsunagaKeisuke KikutaniEishi ShiobaraShinya Takahashi
    • Seiro MIYOSHIYasunobu KaiKentaro MatsunagaKeisuke KikutaniEishi ShiobaraShinya Takahashi
    • H01L21/302G03F7/20
    • G03F1/34G03F7/095H01L21/0274H01L21/31144
    • A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.
    • 图案形成方法包括在下面的区域上形成第一光致抗蚀剂,在第一光致抗蚀剂上形成第二光致抗蚀剂,第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度, 通过包括第一透射区域和第二透射区域的光掩模进行光刻,所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差,第一透射区域和第二透射区域以照射区域相邻的方式设置, 以及显影已经用曝光光照射的第一和第二光致抗蚀剂,由此形成结构,其包括下部区域被暴露的第一区域,第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂 剩下第二光致抗蚀剂。
    • 4. 发明授权
    • Substrate processing apparatus and method
    • 基板加工装置及方法
    • US07779777B2
    • 2010-08-24
    • US12466525
    • 2009-05-15
    • Eishi ShiobaraHirokazu KatoSeiro MiyoshiShinichi Ito
    • Eishi ShiobaraHirokazu KatoSeiro MiyoshiShinichi Ito
    • B05B15/02B05B3/00B05B1/28B05B13/02
    • H01L21/67253H01L21/67051H01L21/6715
    • A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
    • 基板处理装置包括安装在被处理基板上的样品台,供给化学溶液的第一管线,供给清洗液的第二管线,与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个,设置在三通阀上游的第一线上的过滤器,并且被配置为从化学溶液中除去异物,以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时,排出化学溶液或清洗液体。 当基材涂有化学溶液时,三通阀选择第一行,在其他情况下选择第二行。
    • 5. 发明申请
    • Substrate processing apparatus and method
    • 基板加工装置及方法
    • US20070266936A1
    • 2007-11-22
    • US11798132
    • 2007-05-10
    • Eishi ShiobaraHirokazu KatoSeiro MiyoshiShinichi Ito
    • Eishi ShiobaraHirokazu KatoSeiro MiyoshiShinichi Ito
    • B05C11/02
    • H01L21/67253H01L21/67051H01L21/6715
    • A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
    • 基板处理装置包括安装在被处理基板上的样品台,供给化学溶液的第一管线,供给清洗液的第二管线,与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个,设置在三通阀上游的第一线上的过滤器,并且被配置为从化学溶液中除去异物,以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时,排出化学溶液或清洗液体。 当基材涂有化学溶液时,三通阀选择第一行,在其他情况下选择第二行。