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1. 发明申请

US20090226624A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 失效
标题翻译：基板加工装置和方法
公开(公告)号：US20090226624A1
公开(公告)日：2009-09-10
申请号：US12466525
申请日：2009-05-15
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05D1/02 , B05B7/00 , B05B13/04 , B05C5/00 , B05B15/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

2. 发明授权

US07779777B2 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US07779777B2
公开(公告)日：2010-08-24
申请号：US12466525
申请日：2009-05-15
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05B15/02 , B05B3/00 , B05B1/28 , B05B13/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

3. 发明申请

US20070266936A1 Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置及方法
公开(公告)号：US20070266936A1
公开(公告)日：2007-11-22
申请号：US11798132
申请日：2007-05-10
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05C11/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

4. 发明申请

US20100078860A1 IMPRINT METHOD 有权
标题翻译： IMPRINT方法
公开(公告)号：US20100078860A1
公开(公告)日：2010-04-01
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

5. 发明授权

US08419995B2 Imprint method 有权
标题翻译：印记法
公开(公告)号：US08419995B2
公开(公告)日：2013-04-16
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B28B11/08 , B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

6. 发明申请

US20100304568A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100304568A1
公开(公告)日：2010-12-02
申请号：US12752684
申请日：2010-04-01
申请人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
发明人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
IPC分类号： H01L21/302 , G03F7/20
CPC分类号： G03F1/34 , G03F7/095 , H01L21/0274 , H01L21/31144
摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.
摘要翻译：图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度，通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置，以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂剩下第二光致抗蚀剂。

7. 发明申请

US20090123878A1 PATTERNING METHOD 审中-公开
标题翻译：绘图方法
公开(公告)号：US20090123878A1
公开(公告)日：2009-05-14
申请号：US12256240
申请日：2008-10-22
申请人： Seiro MIYOSHI , Eishi Shiobara
发明人： Seiro MIYOSHI , Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： H01L21/31144 , G03F7/11 , G03F7/2004 , H01L21/0274 , H01L21/28017 , H01L21/32139
摘要： A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.
摘要翻译：图案化方法包括：在工件基板上形成第一膜; 在第一膜上形成第二膜，第二膜是相对于第一膜的EUV（极紫外）光具有较低的光吸收系数的硅膜; 在第二膜上形成抗蚀剂膜; 用EUV光选择性地照射抗蚀剂膜; 并开发抗蚀膜。

8. 发明授权

US07973907B2 Method for treating substrate, method for conveying substrate, and apparatus for conveying substrate 失效
标题翻译：处理基板的方法，输送基板的方法以及输送基板的装置
公开(公告)号：US07973907B2
公开(公告)日：2011-07-05
申请号：US12261596
申请日：2008-10-30
申请人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
发明人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
IPC分类号： G03B27/52
CPC分类号： G03F7/16
摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.
摘要翻译：在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。气氛基本上不含湿气，直到将基板输送到曝光装置。

9. 发明申请

US20090115978A1 METHOD FOR TREATING SUBSTRATE, METHOD FOR CONVEYING SUBSTRATE, AND APPARATUS FOR CONVEYING SUBSTRATE 失效
标题翻译：用于处理基板的方法，用于输送基板的方法和用于输送基板的装置
公开(公告)号：US20090115978A1
公开(公告)日：2009-05-07
申请号：US12261596
申请日：2008-10-30
申请人： Kentaro MATSUNAGA , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
发明人： Kentaro MATSUNAGA , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
IPC分类号： G03F7/38
CPC分类号： G03F7/16
摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.
摘要翻译：在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。气氛基本上不含湿气，直到将基板输送到曝光装置。

10. 发明授权

US06270948B1 Method of forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06270948B1
公开(公告)日：2001-08-07
申请号：US09327223
申请日：1999-06-07
申请人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
发明人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
IPC分类号： G03F700
CPC分类号： G03F7/094 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3121
摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案和碘。采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

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