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1. 发明授权

US5946184A Electrostatic chuck, and method of and apparatus for processing sample 失效
标题翻译：静电吸盘，以及样品处理方法及装置
公开(公告)号：US5946184A
公开(公告)日：1999-08-31
申请号：US927278
申请日：1997-09-11
申请人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
发明人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck includes a pair of electrodes having different polarities; and a dielectric film, formed on top surfaces of the pair of electrodes, on which a sample is to be electrostatically attracted and held when a DC voltage is applied between the pair of electrodes; wherein the respective amounts of electric charges stored on attracting portions of the dielectric film corresponding to the pair of electrodes, directly before stopping supply of the DC voltage applied between the pair of electrodes, are substantially equal to each other. With this chuck, the electric charges stored on the attracting portions of the dielectric film after stopping supply of the DC voltage can be eliminated due to the balance between the electric charges having different polarities. The electrostatic chuck is subjected to a significantly reduced residual attracting force.
摘要翻译：静电卡盘包括具有不同极性的一对电极; 以及形成在所述一对电极的顶表面上的电介质膜，当在所述一对电极之间施加直流电压时，待静电吸引和保持样品的电介质膜; 其特征在于，在停止施加在所述一对电极之间的直流电压的供给之前，直接在与所述一对电极对应的所述电介质膜的吸引部分上存储的各种电荷量基本相等。利用该卡盘，可以通过在极性不同的电荷之间的平衡来消除在停止供给直流电压之后存储在电介质膜的吸引部分上的电荷。静电吸盘受到显着降低的残留吸引力。

2. 发明授权

US06243251B1 Electrostatic chuck, and method of and apparatus for processing sample using the chuck 失效
标题翻译：静电吸盘，使用卡盘处理样品的方法和设备
公开(公告)号：US06243251B1
公开(公告)日：2001-06-05
申请号：US09382779
申请日：1999-08-25
申请人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
发明人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
IPC分类号： H02N1300
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck includes a pair of electrodes having different polarities, and a dielectric film, formed on top surfaces of the pair of electrodes, on which a sample to be electrostatically attracted and held when a DC voltage is applied between the pair of electrodes, wherein the respective amounts of electric charges stored on attracting portions of the dielectric film corresponding to the pair of electrodes, directly before stopping supply of the DC voltage applied between the pair of electrodes, are substantially equal to each other. With this chuck, the electric charges stored on the attracting portions of the dielectric film after stopping supply of the DC voltage can be eliminated due to the balance between the electric charges having different polarities. The electrostatic chuck is subjected to a significantly reduced residual attracting force.
摘要翻译：静电卡盘包括具有不同极性的一对电极和形成在一对电极的顶表面上的电介质膜，当在一对电极之间施加直流电压时，待静电吸引并保持的样品，其中在停止施加在该对电极之间的直流电压的供给之前，直接在与该对电极对应的电介质膜的吸引部分上存储的电荷的相应量基本相等。利用该卡盘，可以通过在极性不同的电荷之间的平衡来消除在停止供给直流电压之后存储在电介质膜的吸引部分上的电荷。静电吸盘受到显着降低的残留吸引力。

3. 发明授权

US06373681B1 Electrostatic chuck, and method of and apparatus for processing sample using the chuck 有权
公开(公告)号：US06373681B1
公开(公告)日：2002-04-16
申请号：US09833557
申请日：2001-04-13
申请人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
发明人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
IPC分类号： H02N1300
摘要： A sample processing method includes electrostatically attracting and holding a sample on an electrostatic chuck which includes a pair of electrodes having different polarities and being concentrically disposed, and a dielectric film formed on top surfaces of the pair of electrodes, by applying a DC voltage between the pair of electrodes. The sample which is attracted and held on the chuck through the dielectric film is subjected to plasma processing while applying a bias voltage. The application of the bias voltage applied during plasma processing is stopped after termination of processing the sample, and an unbalance between electric charges stored on attracting portions of the dielectric film formed on the electrodes is eliminated by continuing generation of the plasma for a specific time after stopping the application of the bias voltage. The plasma is extinguished after an elapse of the specific time.

4. 发明授权

US06549393B2 Semiconductor wafer processing apparatus and method 失效
标题翻译：半导体晶片加工装置及方法
公开(公告)号：US06549393B2
公开(公告)日：2003-04-15
申请号：US09946615
申请日：2001-09-06
申请人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburo Kanai , Ken Yoshioka
发明人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburo Kanai , Ken Yoshioka
IPC分类号： H02N1300
CPC分类号： H01L21/67109 , H01J2237/2001
摘要： A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.
摘要翻译：晶片载物台2，用于通过将晶片放置在晶片台上，将半导体晶片保持在等离子体处理装置中，所述晶片台2包括配备有制冷剂流路的基材26，所述制冷剂流路用于使用于温度调节的制冷剂流动; 设置在所述基材26的晶片固定侧并且具有比所述基材更小的热膨胀系数的应力减小构件28; 设置在所述减压构件的晶片固定侧的电介质膜30; 以及设置在所述基材的晶片非凝固侧并且具有比所述基材更小的热膨胀系数的防偏转构件29。当使用晶片台时，可以均匀且非常精确地控制作为被处理基板的晶片的温度。

5. 发明授权

US06835665B2 Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method 失效
标题翻译：蚀刻材料的蚀刻方法和使用该方法的半导体制造方法和装置
公开(公告)号：US06835665B2
公开(公告)日：2004-12-28
申请号：US10090761
申请日：2002-03-06
申请人： Nobuyuki Mise , Ken Yoshioka , Ryoji Nishio , Tatehito Usui
发明人： Nobuyuki Mise , Ken Yoshioka , Ryoji Nishio , Tatehito Usui
IPC分类号： H01L21302
CPC分类号： H01L21/31144 , C23F4/00 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L21/32139 , H01L28/65 , H01L43/12
摘要： A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using the mask formed with a side wall angled at 90 degrees or less with respect to the surface of the substrate, thereby forming the etched film with a taper angle to the surface of the substrate equal to or larger than the taper angle of the mask.
摘要翻译：使用形成在难蚀刻材料和等离子体的膜上的掩模蚀刻在基板上形成的几乎蚀刻的材料的膜，其中使用形成有角度为90°的侧壁的掩模蚀刻难蚀刻材料的膜度以下，由此形成与基板的表面成锥角的蚀刻膜等于或大于掩模的锥角。

6. 发明授权

US06596551B1 Etching end point judging method, etching end point judging device, and insulating film etching method using these methods 有权
标题翻译：蚀刻终点判定方法，蚀刻终点判定装置以及使用这些方法的绝缘膜蚀刻方法
公开(公告)号：US06596551B1
公开(公告)日：2003-07-22
申请号：US09452174
申请日：1999-12-01
申请人： Tatehito Usui , Ken Yoshioka , Shoji Ikuhara , Kouji Nishihata , Kazue Takahashi , Tetsunori Kaji , Shigeru Nakamoto
发明人： Tatehito Usui , Ken Yoshioka , Shoji Ikuhara , Kouji Nishihata , Kazue Takahashi , Tetsunori Kaji , Shigeru Nakamoto
IPC分类号： H01L2166
CPC分类号： H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76897 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Etching end point judging method that includes the following steps in a dry etching end point judging method having a step of reducing noise of input signal waveforms using first digital filter, a step of obtaining a differential coefficient (primary or secondary) of a signal waveform from differential processing by operation circuit, a step of obtaining a smoothed differential coefficient value by reducing the noise components of the time series differential coefficient waveform that was obtained in the previous step, using the second digital filter, and a step of judging an etching end point by comparing the smoothed differential coefficient value and a preset value using discrimination method.
摘要翻译：一种蚀刻终点判定方法，其特征在于，在具有使用第一数字滤波器降低输入信号波形的噪声的步骤的干式蚀刻终点判定方法中，具有以下步骤：获得信号波形的微分系数（初级或次级）通过运算电路的差分处理，通过使用第二数字滤波器减少上一步骤中获得的时间序列差分系数波形的噪声分量来获得平滑的微分系数值的步骤，以及判断蚀刻终点通过使用判别方法比较平滑的微分系数值和预设值。

7. 发明授权

US06245202B1 Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06245202B1
公开(公告)日：2001-06-12
申请号：US09155906
申请日：1998-10-08
申请人： Manabu Edamura , Ryoji Nishio , Ken Yoshioka , Saburo Kanai
发明人： Manabu Edamura , Ryoji Nishio , Ken Yoshioka , Saburo Kanai
IPC分类号： C23C1434
CPC分类号： H01J37/321 , C23C16/507 , H01L21/3065 , H05H1/46
摘要： In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.
摘要翻译：在高频感应等离子体蚀刻装置中，馈送高频功率的天线与处理室之间的空间与具有适当厚度的绝缘材料绝缘，同时天线被保护免受等离子体或反应性用于等离子体处理的气体和与等离子体接触的一侧的表面被绝缘材料如氧化铝和石英覆盖。将绝缘材料和天线置于真空中。由于包含绝缘材料和天线的处理室可以承受大气压力的压力差，所以绝缘材料所需要的就是其承受等离子体气氛的能力。因此，可以使绝缘材料变薄，并且以高密度均匀地产生等离子体。通过在天线及其周围环境之间尽可能小的间隙或通过使间隙的压力更接近处理室中的压力而将在天线处产生的热量散发到外部。或者，可以将诸如He气体的非反应性热传递促进气体的几个Torr引入形成在天线周围的细小间隙中，以散发在天线处产生的热量。

8. 发明授权

US06180019B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06180019B2
公开(公告)日：2001-01-30
申请号：US08979949
申请日：1997-11-26
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H102
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

9. 发明授权

US06646233B2 Wafer stage for wafer processing apparatus and wafer processing method 失效
标题翻译：晶圆处理装置的晶片台和晶圆加工方法
公开(公告)号：US06646233B2
公开(公告)日：2003-11-11
申请号：US10087747
申请日：2002-03-05
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： F27B514
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.
摘要翻译：用于晶片处理装置的晶片台，其包括具有内置冷却剂液体循环路径的液体冷却套和附接到液体冷却套上的陶瓷板，并且其中具有用于静电卡盘的加热器和电极，在将晶片安装在陶瓷板上的同时进行晶片处理的晶片台，其中液体冷却套管允许通过在液体冷却套上形成的冷却剂气体循环间隙来连接陶瓷板，同时设置在液体冷却套和陶瓷之间在其上容纳多个耐热密封材料，其中包含用于密封冷却剂气体的弹性体。

10. 发明授权

US06895179B2 Wafer stage for wafer processing apparatus 失效
标题翻译：晶圆处理装置的晶圆台
公开(公告)号：US06895179B2
公开(公告)日：2005-05-17
申请号：US10658280
申请日：2003-09-10
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/00 , H01L21/683 , F26B19/00
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.
摘要翻译：一种用于晶片处理装置的晶片台，其具有附接到液体冷却套上的具有内置冷却剂液体循环路径的液体冷却套和陶瓷板，并且其中具有用于静电卡盘的加热器和电极。晶片台可以在将晶片安装在陶瓷板上的同时实现晶片处理的性能。液体冷却套管能够通过用于在液体冷却套上形成的冷却剂气体的循环的间隙来安装陶瓷板，以及耐热密封材料，其中容纳有用于将液体冷却套和第二组件之间的冷却剂气体密封的弹性体陶瓷板。

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