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1. 发明授权

US09082700B2 Ultraviolet treatment of metal oxide electrodes 有权
标题翻译：金属氧化物电极的紫外线处理
公开(公告)号：US09082700B2
公开(公告)日：2015-07-14
申请号：US13296191
申请日：2011-11-14
申请人： Sean Andrew Vail , David R. Evans , Wei Pan , Jong-Jan Lee
发明人： Sean Andrew Vail , David R. Evans , Wei Pan , Jong-Jan Lee
IPC分类号： H01L21/44 , H01L21/268 , H01G9/20 , H01L21/02 , H01L29/786
CPC分类号： H01L21/2686 , H01G9/2031 , H01G9/2059 , H01L21/02554 , H01L29/7869 , Y02E10/542
摘要： An ultraviolet treatment method is provided for a metal oxide electrode. A metal oxide electrode is exposed to an ultraviolet (UV) light source in a humid environment. The metal oxide electrode is then treated with a moiety having at least one anchor group, where the anchor group is a chemical group capable of promoting communication between the moiety and the metal oxide electrode. As a result, the moiety is bound to the metal oxide electrode. In one aspect the metal oxide electrode is treated with a photoactive moiety. Exposing the metal oxide electrode to the UV light source in the humid environment induces surface defects in the metal oxide electrode in the form of oxygen vacancies. In response to the humidity, atmospheric water competes favorably with oxygen for dissociative adsorption on the metal oxide electrode surface, and hydroxylation of the metal oxide electrode surface is induced.
摘要翻译：为金属氧化物电极提供紫外线处理方法。金属氧化物电极在潮湿环境中暴露于紫外（UV）光源。然后用具有至少一个锚定基团的部分处理金属氧化物电极，其中锚定基团是能够促进部分和金属氧化物电极之间的连通的化学基团。结果，该部分与金属氧化物电极结合。在一个方面，用光活性部分处理金属氧化物电极。在潮湿环境中将金属氧化物电极暴露于UV光源以氧空位的形式引起金属氧化物电极中的表面缺陷。响应于湿度，大气水与氧反应，在金属氧化物电极表面上进行离解吸附，诱导金属氧化物电极表面的羟基化。

2. 发明申请

US20120302743A1 Long Wavelength Absorbing Porphyrin Photosensitizers for Dye-Sensitized Solar Cells 有权
标题翻译：用于染料敏化太阳能电池的长波长吸收卟啉光敏剂
公开(公告)号：US20120302743A1
公开(公告)日：2012-11-29
申请号：US13117529
申请日：2011-05-27
申请人： Sean Andrew Vail , David R. Evans , Wei Pan
发明人： Sean Andrew Vail , David R. Evans , Wei Pan
IPC分类号： C07D487/22
CPC分类号： C07D487/22 , Y02E10/542
摘要： A long wavelength absorbing porphyrin/metalloporphyrin molecule is provided, made up of a porphyrin macrocycle and an anchor group for attachment to a substrate. A molecular linking element is interposed between the porphyrin macrocycle and the anchor group. The porphyrin/metalloporphyrin molecule also includes an (aminophenyl)amine group, either N,N-(4-aminophenyl)amine or N-phenyl-N-(4-aminophenyl)amine, where an amino moiety of the 4-aminophenyl group is derivatized by an element such as hydrogen, haloalkanes, aromatic hydrocarbons, halogenated aromatic hydrocarbons, heteroarenes, halogenated heteroarenes, or combinations of the above-mentioned elements.
摘要翻译：提供长波长吸收卟啉/金属卟啉分子，其由卟啉大环化合物和锚定基团组成，用于附着于基底。分子连接元件介于卟啉大环和锚基之间。卟啉/金属卟啉分子还包括（氨基苯基）胺基团，N，N-（4-氨基苯基）胺或N-苯基-N-（4-氨基苯基）胺，其中4-氨基苯基的氨基部分为由诸如氢，卤代烷烃，芳族烃，卤代芳烃，杂芳烃，卤代杂芳烃或上述元素的组合的元素衍生。

3. 发明授权

US08907081B2 Long wavelength absorbing porphyrin photosensitizers for dye-sensitized solar cells 有权
标题翻译：用于染料敏化太阳能电池的长波长吸收卟啉光敏剂
公开(公告)号：US08907081B2
公开(公告)日：2014-12-09
申请号：US13117529
申请日：2011-05-27
申请人： Sean Andrew Vail , David R. Evans , Wei Pan
发明人： Sean Andrew Vail , David R. Evans , Wei Pan
IPC分类号： C07D487/22
CPC分类号： C07D487/22 , Y02E10/542
摘要： A long wavelength absorbing porphyrin/metalloporphyrin molecule is provided, made up of a porphyrin macrocycle and an anchor group for attachment to a substrate. A molecular linking element is interposed between the porphyrin macrocycle and the anchor group. The porphyrin/metalloporphyrin molecule also includes an (aminophenyl)amine group, either N,N-(4-aminophenyl)amine or N-phenyl-N-(4-aminophenyl)amine, where an amino moiety of the 4-aminophenyl group is derivatized by an element such as hydrogen, haloalkanes, aromatic hydrocarbons, halogenated aromatic hydrocarbons, heteroarenes, halogenated heteroarenes, or combinations of the above-mentioned elements.
摘要翻译：提供长波长吸收卟啉/金属卟啉分子，其由卟啉大环化合物和锚定基团组成，用于附着于基底。分子连接元件介于卟啉大环和锚基之间。卟啉/金属卟啉分子还包括（氨基苯基）胺基团，N，N-（4-氨基苯基）胺或N-苯基-N-（4-氨基苯基）胺，其中4-氨基苯基的氨基部分为由诸如氢，卤代烷烃，芳族烃，卤代芳烃，杂芳烃，卤代杂芳烃或上述元素的组合的元素衍生。

4. 发明申请

US20120073635A1 Tandem Dye-Sensitized Solar Cell and Method for Making Same 审中-公开
标题翻译：串联染料敏化太阳能电池及其制造方法
公开(公告)号：US20120073635A1
公开(公告)日：2012-03-29
申请号：US12892779
申请日：2010-09-28
申请人： Jong-Jan Lee , David R. Evans , Karen Yuri Nishimura , Sean Andrew Vail , Wei Pan
发明人： Jong-Jan Lee , David R. Evans , Karen Yuri Nishimura , Sean Andrew Vail , Wei Pan
IPC分类号： H01L51/46 , H01L31/18 , H01L31/0256
CPC分类号： H01G9/2072 , H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A method is provided for forming a tandem dye-sensitized solar cell (DSC) using a bonding process. The method forms a first photovoltaic (PV) cell including a cathode, a first dye, and an anode. A second PV cell is also formed including a cathode, a second dye, and an anode. The second PV cell anode is bonded to the first PV cell cathode, at a temperature of less than 100 degrees C., using a transparent conductive adhesive. In response to the bonding, an internal series electrical connection is formed between the first PV cell and the second PV cell. In one aspect, the second PV cell is formed from a first titanium oxide (TiO2) nanotube (TNT) layer anode.
摘要翻译：提供了使用接合工艺形成串联染料敏化太阳能电池（DSC）的方法。该方法形成包括阴极，第一染料和阳极的第一光伏（PV）电池。还形成第二PV电池，包括阴极，第二染料和阳极。使用透明导电粘合剂，第二PV电池阳极在小于100摄氏度的温度下结合到第一PV电池阴极。响应于接合，在第一PV电池和第二PV电池之间形成内部串联电连接。一方面，第二PV电池由第一氧化钛（TiO 2）纳米管（TNT）层阳极形成。

5. 发明申请

US20140134792A1 Solution-Processed Metal Selenide Semiconductor using Deposited Selenium Film 审中-公开
标题翻译：使用沉积的硒膜的溶液加工的金属硒化物半导体
公开(公告)号：US20140134792A1
公开(公告)日：2014-05-15
申请号：US13719052
申请日：2012-12-18
申请人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
发明人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/02628 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： Methods are provided for fabricating a solution-processed metal and mixed-metal selenide semiconductor using a selenium (Se) film layer. One aspect provides a conductive substrate and deposits a first Se film layer over the conductive substrate. A first solution, including a first material set of metal salts, metal complexes, or combinations thereof, is dissolved in a solvent and deposited on the first Se film layer. A first intermediate film comprising metal precursors is formed from corresponding members of the first material set. In one aspect, a plurality of intermediate films is formed using metal precursors from the first material set or a different material set. In another aspect, a second Se film layer is formed overlying the intermediate film(s). Thermal annealing is performed in an environment including hydrogen (H2), hydrogen selenide (H2Se), or Se/H2. The metal precursors are transformed in the intermediate film(s), and a metal selenide-containing semiconductor is formed.
摘要翻译：提供了使用硒（Se）膜层制造溶液处理金属和混合金属硒化物半导体的方法。一个方面提供一种导电衬底并且在导电衬底上沉积第一Se膜层。包括金属盐，金属络合物或其组合的第一材料组合的第一溶液溶解在溶剂中并沉积在第一Se膜层上。包含金属前体的第一中间膜由第一材料组的相应构件形成。在一个方面，使用来自第一材料组或不同材料组的金属前体形成多个中间膜。在另一方面，形成覆盖中间膜的第二Se膜层。在包括氢（H 2），硒化氢（H 2 Se）或Se / H 2的环境中进行热退火。金属前体在中间膜中转变，形成含金属硒化物的半导体。

6. 发明申请

US20140116509A1 Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant 审中-公开
标题翻译：使用氧化掺杂剂的固态染料敏化太阳能电池
公开(公告)号：US20140116509A1
公开(公告)日：2014-05-01
申请号：US13664256
申请日：2012-10-30
申请人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
发明人： Sean Andrew Vail , Alexey Koposov , Wei Pan , Gary D. Foley , Jong-Jan Lee
IPC分类号： H01L51/00 , H01B1/12
CPC分类号： H01L51/4226 , H01L51/002 , H01L51/0058 , Y02E10/549
摘要： A solid-state hole transport composite material (ssHTM) is provided. The ssHTM is made from a neutral charge first p-type organic semiconductor, and a chemically oxidized first p-type semiconductor, where the dopants are silver(I) containing materials. A reduced form of the silver(I) containing material is also retained as functional component in the ssHTM. In one aspect, the silver(I) containing material is silver bis(trifluoromethanesulfonyl)imide (TFSI). In another aspect, the first p-type organic semiconductor is 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD). In one variation, the ssHTM additionally includes a first p-type organic semiconductor doped with an ionic dopant such as lithium (Li+), sodium (Na+), potassium (K+), or combinations of the above-mentioned materials. Also provided are a method for synthesizing the above-described ssHTM, and a solid-state dye solar cell (ssDSC) fabricated from the ssHTM.
摘要翻译：提供固态空穴传输复合材料（ssHTM）。 ssHTM由中性电荷第一p型有机半导体和化学氧化的第一p型半导体制成，其中掺杂剂是含银（I）的材料。含有银（I）的材料的还原形式也作为ssHTM中的功能组分保留。一方面，含有银（I）的材料是双（三氟甲磺酰）酰亚胺（TFSI）。另一方面，第一p型有机半导体是2,2'，7,7'-四（N，N-二 - 对甲氧基苯胺）-9,9'-螺二芴（Spiro-OMeTAD）。在一个实施方案中，ssHTM还包括掺杂有离子掺杂剂如锂（Li +），钠（Na +），钾（K +）或上述材料的组合的第一p型有机半导体。还提供了合成上述ssHTM的方法和由ssHTM制造的固态染料太阳能电池（ssDSC）。

7. 发明申请

US20140158021A1 Electrochemical Synthesis of Selenium Nanoparticles 审中-公开
标题翻译：硒纳米粒子的电化学合成
公开(公告)号：US20140158021A1
公开(公告)日：2014-06-12
申请号：US13711356
申请日：2012-12-11
申请人： Wei Pan , Sean Andrew Vail
发明人： Wei Pan , Sean Andrew Vail
IPC分类号： C25C1/22
CPC分类号： C25B1/00 , B82Y40/00
摘要： A method is provided for the electrochemical synthesis of selenium (Se) nanoparticles (NPs). The method forms a first solution including a Se containing material and a stabilizing first ligand, dissolved in a first solvent. The first solution is exposed to an electric field, and in response to the electric field, a second solution is formed with dispersed SeNPs. The Se containing material has either a nonzero or positive oxidation state. In one particular aspect, the first solution is formed by dissolving Se dioxide (SeO2) in water to form selenosis acid (H2SeO3).
摘要翻译：提供了硒（Se）纳米粒子（NP）的电化学合成方法。该方法形成溶解在第一溶剂中的包含Se的材料和稳定的第一配体的第一溶液。第一溶液暴露于电场，并且响应于电场，形成具有分散的SeNP的第二溶液。含Se材料具有非零或正的氧化态。在一个特定方面，第一溶液是通过将二氧化碳（SeO 2）溶解在水中而形成硒代酸（H2SeO3）形成的。

8. 发明申请

US20130291941A1 Solid-State Dye-Sensitized Solar Cell Using Sodium or Potassium Ionic Dopant 审中-公开
标题翻译：固态染料敏化太阳能电池使用钠或钾离子掺杂剂
公开(公告)号：US20130291941A1
公开(公告)日：2013-11-07
申请号：US13461674
申请日：2012-05-01
申请人： Sean Andrew Vail , Wei Pan , Gary D. Foley , Jong-Jan Lee
发明人： Sean Andrew Vail , Wei Pan , Gary D. Foley , Jong-Jan Lee
IPC分类号： H01L31/0256 , H01L31/0264 , H01L31/0376 , B82Y30/00
CPC分类号： H01G9/2009 , B82Y30/00 , H01L51/002 , H01L51/4226 , Y02E10/542 , Y02E10/549
摘要： A solid-state hole transport composite material (ssHTM) is provided made from a p-type organic semiconductor and a dopant material serving as a source for either sodium (Na+) or potassium (K+) ions. The p-type organic semiconductor may be molecular (a collection of discrete molecules, that are either chemically identical or different), oligomeric, polymeric materials, or combinations thereof. In one aspect, the p-type organic semiconductor is 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD). The dopant material is an inorganic or organic material salt. A solid-state dye-sensitized solar cell (ssDSC) with the above-described ssHTM, is also provided.
摘要翻译：提供由p型有机半导体和用作钠（Na +）或钾（K +）离子的源的掺杂剂材料制成的固态空穴传输复合材料（ssHTM）。 p型有机半导体可以是分子（离散分子的集合，其化学上相同或不同），低聚物，聚合材料或其组合。一方面，p型有机半导体是2,2'，7,7'-四（N，N-二 - 对甲氧基苯胺）-9,9'-螺二芴（Spiro-OMeTAD）。掺杂剂材料是无机或有机材料盐。还提供了具有上述ssHTM的固态染料敏化太阳能电池（ssDSC）。

9. 发明授权

US07256429B2 Memory cell with buffered-layer 有权
标题翻译：带缓冲层的存储单元
公开(公告)号：US07256429B2
公开(公告)日：2007-08-14
申请号：US11314222
申请日：2005-12-21
申请人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
发明人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
IPC分类号： H01L21/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , G11C2213/51 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7−X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1−XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.
摘要翻译：提供了一种用于形成缓冲层存储单元的方法。该方法包括：形成底部电极; 形成覆盖底部电极的巨大磁阻（CMR）记忆膜; 形成存储器稳定的半导体缓冲层，通常为覆盖存储膜的金属氧化物; 并且形成覆盖半导体缓冲层的顶部电极。在该方法的一些方面，半导体缓冲层由YBa 2 N 3 O 7-X（YBCO），氧化铟（In 2或2 O 3）或氧化钌（RuO 2 N 2），其厚度在10-200纳米（nm）的范围内。顶部和底部电极可以是TiN / Ti，Pt / TiN / Ti，In / TiN / Ti，PtRhOx化合物或PtIrOx化合物。 CMR存储器膜可以是Pr 1-X C x MnO 3（PCMO）存储膜，其中x在0.1之间的区域和0.6，厚度在10至200nm的范围内。

10. 发明授权

US07094691B2 MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications 有权
标题翻译：使用W（CO）6和NH3作为铜屏障应用的氮化钨薄膜的MOCVD
公开(公告)号：US07094691B2
公开(公告)日：2006-08-22
申请号：US10410029
申请日：2003-04-09
申请人： Wei Pan , Robert Barrowcliff , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , Robert Barrowcliff , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L21/76841 , C23C16/34
摘要： A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable-temperature bubbler to provide a gaseous tungsten source; setting the variable-temperature bubbler to a predetermined temperature; passing a carrier gas through the variable-temperature bubbler and carrying the gaseous tungsten source with the carrier gas into the CVD vacuum chamber; introducing a nitrogen-containing reactant gas into the CVD vacuum chamber; reacting the gaseous tungsten source and the nitrogen-containing reactant gas above the surface of the silicon wafer in a deposition process to deposit a WxNy thin film on the surface of the silicon wafer; and completing the integrated circuit containing the WxNy thin film.
摘要翻译：在集成电路中形成氮化钨薄膜的方法包括在硅晶片上制备硅衬底，并将硅晶片放置在CVD真空室中的可加热卡盘中; 将已知量的钨源放置在可变温度起泡器中以提供气态钨源; 将可变温度起泡器设定到预定温度; 使载气通过可变温度起泡器并将载气的气态钨源运送到CVD真空室中; 将含氮反应气体引入CVD真空室中; 在沉积过程中使气态钨源和硅晶片表面上方的含氮反应物气体反应，以沉积W 1 / N 2 N 2 O 3 硅晶片; 并完成包含W＆lt; N＆gt; N＆gt; Y＆lt;＆lt;＆lt;＆lt;薄膜的集成电路。

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