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1. 发明授权

US08810897B2 Method for improving metallic nanostructure stability 有权
标题翻译：提高金属纳米结构稳定性的方法
公开(公告)号：US08810897B2
公开(公告)日：2014-08-19
申请号：US13434548
申请日：2012-03-29
申请人： Akinori Hashimura , Liang Tang , David R. Evans
发明人： Akinori Hashimura , Liang Tang , David R. Evans
IPC分类号： G02B26/00 , G02F1/167
CPC分类号： G02F1/167 , B05D5/12 , G02F1/1334 , G02F1/13439 , G02F1/23 , G02F2202/36 , G02F2203/10 , G02F2203/34
摘要： A method is provided for improving metallic nanostructure stability. The method provides a substrate, and using a physical vapor deposition (PVD) process for example, deposits metallic nanostructures having a first diameter overlying the substrate. Some examples of metallic nanostructures include Ag, Au, and Al. The metallic nanostructures are annealed in an atmosphere including an inert gas and H2. The annealing temperature is less than the melting temperature the metal material in bulk form. In response to the annealing, stabilized metallic nanostructures are formed. If the stabilized metallic nanostructures are exposed to an ambient air environment the stabilized metallic nanostructure maintain the first diameter. Typically, the metallic nanostructures are initially formed having a rectangular shape with corners. After annealing, the stabilized metallic nanostructures have a dome shape.
摘要翻译：提供了一种提高金属纳米结构稳定性的方法。该方法提供基底，并且例如使用物理气相沉积（PVD）工艺沉积具有覆盖在基底上的第一直径的金属纳米结构。金属纳米结构的一些实例包括Ag，Au和Al。金属纳米结构在包括惰性气体和H 2的气氛中退火。退火温度小于块状形式的金属材料的熔融温度。响应于退火，形成稳定的金属纳米结构。如果稳定的金属纳米结构暴露于环境空气环境，则稳定的金属纳米结构保持第一直径。通常，金属纳米结构最初形成为具有角部的矩形形状。退火后，稳定的金属纳米结构具有圆顶形状。

2. 发明申请

US20130077036A1 Method for Improving Metallic Nanostructure Stability 有权
标题翻译：改善金属纳米结构稳定性的方法
公开(公告)号：US20130077036A1
公开(公告)日：2013-03-28
申请号：US13434548
申请日：2012-03-29
申请人： Akinori Hashimura , Liang Tang , David R. Evans
发明人： Akinori Hashimura , Liang Tang , David R. Evans
IPC分类号： B05D5/12 , G02F1/1343
CPC分类号： G02F1/167 , B05D5/12 , G02F1/1334 , G02F1/13439 , G02F1/23 , G02F2202/36 , G02F2203/10 , G02F2203/34
摘要： A method is provided for improving metallic nanostructure stability. The method provides a substrate, and using a physical vapor deposition (PVD) process for example, deposits metallic nanostructures having a first diameter overlying the substrate. Some examples of metallic nanostructures include Ag, Au, and Al. The metallic nanostructures are annealed in an atmosphere including an inert gas and H2. The annealing temperature is less than the melting temperature the metal material in bulk form. In response to the annealing, stabilized metallic nanostructures are formed. If the stabilized metallic nanostructures are exposed to an ambient air environment the stabilized metallic nanostructure maintain the first diameter. Typically, the metallic nanostructures are initially formed having a rectangular shape with corners. After annealing, the stabilized metallic nanostructures have a dome shape.
摘要翻译：提供了一种提高金属纳米结构稳定性的方法。该方法提供基底，并且例如使用物理气相沉积（PVD）工艺沉积具有覆盖在基底上的第一直径的金属纳米结构。金属纳米结构的一些实例包括Ag，Au和Al。金属纳米结构在包括惰性气体和H 2的气氛中退火。退火温度小于块状形式的金属材料的熔融温度。响应于退火，形成稳定的金属纳米结构。如果稳定的金属纳米结构暴露于环境空气环境，则稳定的金属纳米结构保持第一直径。通常，金属纳米结构最初形成为具有角部的矩形形状。退火后，稳定的金属纳米结构具有圆顶形状。

3. 发明授权

US08264081B2 Multilayered barrier metal thin-films 有权
标题翻译：多层阻隔金属薄膜
公开(公告)号：US08264081B2
公开(公告)日：2012-09-11
申请号：US11311546
申请日：2005-12-19
申请人： Wei Pan , Yoshi Ono , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , Yoshi Ono , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/28562 , H01L21/76841 , H01L2221/1078
摘要： A multi-layered barrier metal thin film is deposited on a substrate by atomic layer chemical vapor deposition (ALCVD). The multi-layer film may comprise several different layers of a single chemical species, or several layers each of distinct or alternating chemical species. In a preferred embodiment, the multi-layer barrier thin film comprises a Tantalum Nitride layer on a substrate, with a Titanium Nitride layer deposited thereon. The thickness of the entire multi-layer film may be approximately fifty Angstroms. The film has superior film characteristics, such as anti-diffusion capability, low resistivity, high density, and step coverage, when compared to films deposited by conventional chemical vapor deposition (CVD). The multi-layered barrier metal thin film of the present invention has improved adhesion characteristics and is particularly suited for metallization of a Copper film thereon.
摘要翻译：通过原子层化学气相沉积（ALCVD）将多层阻挡金属薄膜沉积在衬底上。多层膜可以包括单个化学物质的几个不同层，或者各个不同的或交替的化学物质的几个层。在优选实施例中，多层阻挡薄膜包括在衬底上的氮化钽层，其上沉积有氮化钛层。整个多层膜的厚度可以是大约50埃。当与通过常规化学气相沉积（CVD）沉积的膜相比时，该膜具有优异的膜特性，例如抗扩散能力，低电阻率，高密度和台阶覆盖。本发明的多层阻挡金属薄膜具有改善的粘合特性，特别适用于其上的铜膜的金属化。

4. 发明授权

US07589464B2 Nanotip electrode electroluminescence device with contoured phosphor layer 失效
标题翻译：具有成像荧光粉层的纳米技术电极电致发光器件
公开(公告)号：US07589464B2
公开(公告)日：2009-09-15
申请号：US11070051
申请日：2005-03-01
申请人： John F. Conley, Jr. , David R. Evans , Wei Gao , Yoshi Ono
发明人： John F. Conley, Jr. , David R. Evans , Wei Gao , Yoshi Ono
IPC分类号： H05B33/26
CPC分类号： H05B33/10 , B82Y20/00 , C09K11/54 , C09K11/642 , H01L33/18 , H05B33/14
摘要： A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.
摘要翻译：提供了一种具有纳米尺度荧光体层的EL器件的器件和制造方法。该方法包括：形成具有纳米尖端的底部电极; 形成覆盖在底部电极上的荧光体层，具有不规则形状的顶部和底部表面; 并且形成覆盖磷光体层的顶部电极。底部电极顶表面具有纳米尖端轮廓，并且荧光体层不规则形状的顶表面和底表面具有与底部电极顶表面纳米尖端轮廓近似匹配的轮廓。在一个方面，在底部电极和荧光体层之间插入有轮廓的底部电介质，其具有顶部和底部表面，轮廓几乎与纳米尖端轮廓相匹配。类似地，顶部电介质可以插入在顶部电极和荧光体层之间，具有大致与荧光体层顶表面的轮廓相匹配的轮廓的底面。

5. 发明申请

US20090032817A1 Back-To-Back Metal/Semiconductor/Metal (MSM) Schottky Diode 有权
标题翻译：背对背金属/半导体/金属（MSM）肖特基二极管
公开(公告)号：US20090032817A1
公开(公告)日：2009-02-05
申请号：US12234663
申请日：2008-09-21
申请人： Tingkai Li , Sheng Teng Hsu , David R. Evans
发明人： Tingkai Li , Sheng Teng Hsu , David R. Evans
IPC分类号： H01L29/04 , H01L21/329
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/31 , H01L27/2409 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold voltage, breakdown voltage, and on/off current ratio. The method is able to modify the threshold voltage, breakdown voltage, and on/off current ratio of the MSM diode in response to controlling the Si semiconductor layer thickness. Generally, both the threshold and breakdown voltage are increased in response to increasing the Si thickness. With respect to the on/off current ratio, there is an optimal thickness. The method is able to form an amorphous Si (a-Si) and polycrystalline Si (polySi) semiconductor layer using either chemical vapor deposition (CVD) or DC sputtering. The Si semiconductor can be doped with a Group V donor material, which decreases the threshold voltage and increases the breakdown voltage.
摘要翻译：提供了用于从硅（Si）半导体形成金属/半导体/金属（MSM）背对背肖特基二极管的方法。该方法在底电极和顶电极之间沉积Si半导体层，并形成具有阈值电压，击穿电压和开/关电流比的MSM二极管。响应于控制Si半导体层厚度，该方法能够修改MSM二极管的阈值电压，击穿电压和导通/截止电流比。通常，响应于Si厚度的增加，阈值和击穿电压都增加。关于开/关电流比，存在最佳厚度。该方法能够使用化学气相沉积（CVD）或DC溅射形成非晶Si（a-Si）和多晶硅（polySi）半导体层。 Si半导体可以掺杂有V族施主材料，其降低阈值电压并增加击穿电压。

6. 发明授权

US07364665B2 Selective etching processes of SiO2 , Ti and In2 O3 thin films for FeRAM device applications 失效
标题翻译：用于FeRAM器件应用的SiO2，Ti和In2 O3薄膜的选择性蚀刻工艺
公开(公告)号：US07364665B2
公开(公告)日：2008-04-29
申请号：US10970885
申请日：2004-10-21
申请人： Tingkai Li , Bruce D. Ulrich , David R. Evans , Sheng Teng Hsu
发明人： Tingkai Li , Bruce D. Ulrich , David R. Evans , Sheng Teng Hsu
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L29/6684 , C23F4/00 , H01L21/28291 , H01L21/31116 , H01L21/32136
摘要： A method of selectively etching a three-layer structure consisting of SiO2, In2O3, and titanium, includes etching the SiO2, stopping at the titanium layer, using C3F8 in a range of between about 10 sccm to 30 sccm; argon in a range of between about 20 sccm to 40 sccm, using an RF source in a range of between about 1000 watts to 3000 watts and an RF bias in a range of between about 400 watts to 800 watts at a pressure in a range of between about 2 mtorr to 6 mtorr; and etching the titanium, stopping at the In2O3 layer, using BCl in a range of between about 10 sccm to 50 sccm; chlorine in a range of between about 40 sccm to 80 sccm, a Tcp in a range of between about 200 watts to 500 watts at an RF bias in a range of between about 100 watts to 200 watts at a pressure in a range of between about 4 mtorr to 8 mtorr.
摘要翻译：选择性地蚀刻由SiO 2，In 2 O 3 N 3和Ti构成的三层结构的方法包括蚀刻SiO _{2 ，在钛层上停止，使用C 3 3 F 8 N在约10sccm至30sccm之间; 在约20sccm至40sccm的范围内的氩气，使用在约1000瓦特至3000瓦特之间的范围内的RF源和在约400瓦特至800瓦特范围内的RF偏压，约2mtorr至6mtorr; 并且使用在约10sccm至50sccm之间的范围内的BCl蚀刻钛，停止在In 2 N 3 O 3层处; 在约40sccm至80sccm的范围内的氯，在约200瓦特至200瓦特之间的RF偏压下在约200瓦特至500瓦特之间的范围内的T cp < 在约4mtorr至8mtorr的范围内的压力。}

7. 发明授权

US07361574B1 Single-crystal silicon-on-glass from film transfer 有权
标题翻译：单晶硅玻璃从膜转移
公开(公告)号：US07361574B1
公开(公告)日：2008-04-22
申请号：US11601173
申请日：2006-11-17
申请人： Jer-Shen Maa , David R. Evans , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jer-Shen Maa , David R. Evans , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L21/30 , H01L21/461
CPC分类号： H01L21/76251 , H01L21/84 , Y10S438/926 , Y10S438/933
摘要： A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.
摘要翻译：提供了将单晶硅（Si）膜转印到玻璃基板上的方法。该方法沉积覆盖Si晶片的含锗（Ge）的材料，形成牺牲含Ge膜。形成覆盖牺牲的含Ge膜的单晶Si膜。将Si膜表面粘合到透明基板上，形成键合衬底。将键合衬底浸入Ge蚀刻溶液中以除去将透明衬底与Si晶片分离的牺牲Ge含量膜。结果是具有上覆单晶Si膜的透明衬底。可选地，可以形成通道以分布Ge蚀刻溶液，并促进除去含Ge膜。

8. 发明授权

US07241670B2 Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen 失效
标题翻译：使用硅与硼或氦和氢的共同注入形成具有高Ge含量的弛豫SiGe层的方法
公开(公告)号：US07241670B2
公开(公告)日：2007-07-10
申请号：US10936400
申请日：2004-09-07
申请人： Douglas J. Tweet , David R. Evans , Sheng Teng Hsu , Jer-Shen Maa
发明人： Douglas J. Tweet , David R. Evans , Sheng Teng Hsu , Jer-Shen Maa
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/02694 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L29/1054 , Y10S438/933
摘要： A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.
摘要翻译：在半导体器件中形成具有高锗含量的弛豫SiGe层的方法包括制备硅衬底; 沉积应变SiGe层; 将离子注入到应变SiGe层中，其中离子包括选自由硼和氦构成的离子组的硅离子和离子，并且还包括注入H +离子; 退火以使应变SiGe层松弛，从而形成第一弛豫SiGe层; 并完成半导体器件。

9. 发明授权

US07192866B2 Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects 失效
标题翻译：源交替MOCVD工艺沉积氮化钨薄膜作为MOCVD铜互连的阻挡层
公开(公告)号：US07192866B2
公开(公告)日：2007-03-20
申请号：US10326712
申请日：2002-12-19
申请人： Wei Pan , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L2221/1078
摘要： An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine crystal grain films, or possibly amorphous films. The nitrogen source may also be alternated to form WN/W alternating layer films, as tungsten is deposited during periods where the nitrogen source is removed.
摘要翻译：提供了用于沉积用作铜互连的阻挡层的氮化钨薄膜的交替源MOCVD工艺。交替钨前体产生细晶粒膜或可能的非晶膜。氮源也可以交替形成WN / W交替层膜，因为在氮源被去除的时期期间钨被沉积。

10. 发明授权

US07015138B2 Multi-layered barrier metal thin films for Cu interconnect by ALCVD 有权
公开(公告)号：US07015138B2
公开(公告)日：2006-03-21
申请号：US09819296
申请日：2001-03-27
申请人： Wei Pan , Yoshi Ono , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , Yoshi Ono , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , H01L21/76841 , H01L2221/1078
摘要： A multi-layered barrier metal thin film is deposited on a substrate by atomic layer chemical vapor deposition (ALCVD). The multi-layer film may comprise several different layers of a single chemical species, or several layers each of distinct or alternating chemical species. In a preferred embodiment, the multi-layer barrier thin film comprises a Tantalum Nitride layer on a substrate, with a Titanium Nitride layer deposited thereon. The thickness of the entire multi-layer film may be approximately fifty Angstroms. The film has superior film characteristics, such as anti-diffusion capability, low resistivity, high density, and step coverage, when compared to films deposited by conventional chemical vapor deposition (CVD). The multi-layered barrier metal thin film of the present invention has improved adhesion characteristics and is particularly suited for metallization of a Copper film thereon.

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