专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07094691B2 MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications 有权
标题翻译：使用W（CO）6和NH3作为铜屏障应用的氮化钨薄膜的MOCVD
公开(公告)号：US07094691B2
公开(公告)日：2006-08-22
申请号：US10410029
申请日：2003-04-09
申请人： Wei Pan , Robert Barrowcliff , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , Robert Barrowcliff , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L21/76841 , C23C16/34
摘要： A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable-temperature bubbler to provide a gaseous tungsten source; setting the variable-temperature bubbler to a predetermined temperature; passing a carrier gas through the variable-temperature bubbler and carrying the gaseous tungsten source with the carrier gas into the CVD vacuum chamber; introducing a nitrogen-containing reactant gas into the CVD vacuum chamber; reacting the gaseous tungsten source and the nitrogen-containing reactant gas above the surface of the silicon wafer in a deposition process to deposit a WxNy thin film on the surface of the silicon wafer; and completing the integrated circuit containing the WxNy thin film.
摘要翻译：在集成电路中形成氮化钨薄膜的方法包括在硅晶片上制备硅衬底，并将硅晶片放置在CVD真空室中的可加热卡盘中; 将已知量的钨源放置在可变温度起泡器中以提供气态钨源; 将可变温度起泡器设定到预定温度; 使载气通过可变温度起泡器并将载气的气态钨源运送到CVD真空室中; 将含氮反应气体引入CVD真空室中; 在沉积过程中使气态钨源和硅晶片表面上方的含氮反应物气体反应，以沉积W 1 / N 2 N 2 O 3 硅晶片; 并完成包含W＆lt; N＆gt; N＆gt; Y＆lt;＆lt;＆lt;＆lt;薄膜的集成电路。

2. 发明授权

US07157287B2 Method of substrate surface treatment for RRAM thin film deposition 有权
标题翻译： RRAM薄膜沉积的基板表面处理方法
公开(公告)号：US07157287B2
公开(公告)日：2007-01-02
申请号：US10855088
申请日：2004-05-27
申请人： Wei-Wei Zhuang , Tingkai Li , Wei Pan , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tingkai Li , Wei Pan , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/20
CPC分类号： C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C30B23/02 , C30B29/24 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1608
摘要： A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer according to the following: injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber; accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds; baking the wafer at a temperature of about 180° C. for about one minute; ramping the temperature to about 230° C.; baking the wafer for about one minute at the ramped temperature; annealing the wafer at about 500° C. for about five minutes; repeating said spin-coating and heating steps at least three times; post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and completing the semiconductor device.
摘要翻译：制造用于半导体器件的CMR薄膜的方法包括制备基于金属乙酸酯的乙酸溶液形式的CMR前体; 准备晶圆; 将晶片放置在旋涂室中; 根据以下步骤旋涂和加热晶片：将CMR前体注入旋涂室并在旋涂室中的晶片表面上; 将晶片加速至约1500RPM至3000RPM之间的旋转速度约30秒; 在约180℃的温度下烘烤晶片约1分钟; 将温度升高至约230℃; 在升温下烘烤晶片约1分钟; 在约500℃退火晶片约5分钟; 重复所述旋涂和加热步骤至少三次; 在约500℃至600℃之间将晶片退火约1至6小时，在干燥，干净的空气中进行退火; 并完成半导体器件。

3. 发明授权

US06849467B1 MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer 失效
标题翻译：用于FeRAM H2钝化层的TiO2薄膜的MOCVD
公开(公告)号：US06849467B1
公开(公告)日：2005-02-01
申请号：US10621863
申请日：2003-07-16
申请人： Tingkai Li , Wei Pan , Robert A. Barrowcliff , David R. Evans , Sheng Teng Hsu
发明人： Tingkai Li , Wei Pan , Robert A. Barrowcliff , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/00 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L21/28291 , H01L21/31604 , H01L27/11585 , H01L27/1159 , H01L28/57 , H01L29/6684
摘要： A method of forming an H2 passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiOx thin film, where 0
摘要翻译：在FeRAM中形成H 2钝化层的方法包括制备硅衬底; 在大马士革结构上沉积一层TiOx薄膜，其中0

4. 发明授权

US07256429B2 Memory cell with buffered-layer 有权
标题翻译：带缓冲层的存储单元
公开(公告)号：US07256429B2
公开(公告)日：2007-08-14
申请号：US11314222
申请日：2005-12-21
申请人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
发明人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
IPC分类号： H01L21/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , G11C2213/51 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7−X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1−XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.
摘要翻译：提供了一种用于形成缓冲层存储单元的方法。该方法包括：形成底部电极; 形成覆盖底部电极的巨大磁阻（CMR）记忆膜; 形成存储器稳定的半导体缓冲层，通常为覆盖存储膜的金属氧化物; 并且形成覆盖半导体缓冲层的顶部电极。在该方法的一些方面，半导体缓冲层由YBa 2 N 3 O 7-X（YBCO），氧化铟（In 2或2 O 3）或氧化钌（RuO 2 N 2），其厚度在10-200纳米（nm）的范围内。顶部和底部电极可以是TiN / Ti，Pt / TiN / Ti，In / TiN / Ti，PtRhOx化合物或PtIrOx化合物。 CMR存储器膜可以是Pr 1-X C x MnO 3（PCMO）存储膜，其中x在0.1之间的区域和0.6，厚度在10至200nm的范围内。

5. 发明授权

US07214583B2 Memory cell with an asymmetric crystalline structure 有权
标题翻译：具有不对称晶体结构的记忆单元
公开(公告)号：US07214583B2
公开(公告)日：2007-05-08
申请号：US11130983
申请日：2005-05-16
申请人： Sheng Teng Hsu , Tingkai Li , David R. Evans , Wei-Wei Zhuang , Wei Pan
发明人： Sheng Teng Hsu , Tingkai Li , David R. Evans , Wei-Wei Zhuang , Wei Pan
IPC分类号： H01L21/8242
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , H01L45/1625
摘要： Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer having a polycrystalline structure over the bottom electrode; forming an EPVR second layer adjacent the first layer, with a nano-crystalline or amorphous structure; and, forming a top electrode overlying the first and second EPVR layers. EPVR materials include CMR, high temperature super conductor (HTSC), or perovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with a metalorganic spin coat (MOD) process at a temperature in the range between 550 and 700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to the deposition temperature of the first layer. After a step of removing solvents, the MOD deposited EPVR second layer is formed at a temperature less than, or equal to the 550 degrees C.
摘要翻译：提供了非对称结构的存储单元和制造方法。该方法包括：形成底部电极; 在底部电极上形成具有多晶结构的电脉冲各种电阻（EPVR）第一层; 用纳米结晶或无定形结构形成邻近第一层的EPVR第二层; 并且形成覆盖在第一和第二EPVR层上的顶部电极。 EPVR材料包括CMR，高温超导体（HTSC）或钙钛矿金属氧化物材料。在一个方面，EPVR第一层在550-700℃的温度范围内用金属有机旋涂（MOD）工艺沉积.EPVR第二层是在小于或等于沉积温度的第一层。在除去溶剂的步骤之后，将MOD沉积的EPVR第二层在小于或等于550℃的温度下形成。

6. 发明授权

US07029924B2 Buffered-layer memory cell 失效
标题翻译：缓冲层存储单元
公开(公告)号：US07029924B2
公开(公告)日：2006-04-18
申请号：US10755654
申请日：2004-01-12
申请人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
发明人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
IPC分类号： H01L21/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , G11C2213/51 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7-X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1-XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.
摘要翻译：提供了一种用于形成缓冲层存储单元的方法。该方法包括：形成底部电极; 形成覆盖底部电极的巨大磁阻（CMR）记忆膜; 形成存储器稳定的半导体缓冲层，通常为覆盖存储膜的金属氧化物; 并且形成覆盖半导体缓冲层的顶部电极。在该方法的一些方面，半导体缓冲层由YBa 2 N 3 O 7-X（YBCO），氧化铟（In 2或2 O 3）或氧化钌（RuO 2 N 2），其厚度在10-200纳米（nm）的范围内。顶部和底部电极可以是TiN / Ti，Pt / TiN / Ti，In / TiN / Ti，PtRhOx化合物或PtIrOx化合物。 CMR存储器膜可以是Pr 1-X C x MnO 3（PCMO）存储膜，其中x在0.1之间的区域和0.6，厚度在10至200nm的范围内。

7. 发明授权

US06927120B2 Method for forming an asymmetric crystalline structure memory cell 有权
标题翻译：形成不对称晶体结构记忆体的方法
公开(公告)号：US06927120B2
公开(公告)日：2005-08-09
申请号：US10442749
申请日：2003-05-21
申请人： Sheng Teng Hsu , Tingkal Li , David R. Evans , Wei-Wei Zhuang , Wei Pan
发明人： Sheng Teng Hsu , Tingkal Li , David R. Evans , Wei-Wei Zhuang , Wei Pan
IPC分类号： H01L27/10 , G11C11/15 , G11C13/00 , H01L45/00 , H01L21/8242
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608 , H01L45/1625
摘要： Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer having a polycrystalline structure over the bottom electrode; forming an EPVR second layer adjacent the first layer, with a nano-crystalline or amorphous structure; and, forming a top electrode overlying the first and second EPVR layers. EPVR materials include CMR, high temperature super conductor (HTSC), or perovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with a metalorganic spin coat (MOD) process at a temperature in the range between 550 and 700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to the deposition temperature of the first layer. After a step of removing solvents, the MOD deposited EPVR second layer is formed at a temperature less than, or equal to the 550 degrees C.
摘要翻译：提供了非对称结构的存储单元和制造方法。该方法包括：形成底部电极; 在底部电极上形成具有多晶结构的电脉冲各种电阻（EPVR）第一层; 用纳米结晶或无定形结构形成邻近第一层的EPVR第二层; 并且形成覆盖在第一和第二EPVR层上的顶部电极。 EPVR材料包括CMR，高温超导体（HTSC）或钙钛矿金属氧化物材料。在一个方面，EPVR第一层在550-700℃的温度范围内用金属有机旋涂（MOD）工艺沉积.EPVR第二层是在小于或等于沉积温度的第一层。在除去溶剂的步骤之后，将MOD沉积的EPVR第二层在小于或等于550℃的温度下形成。

8. 发明授权

US06579793B2 Method of achieving high adhesion of CVD copper thin films on TaN Substrates 失效
标题翻译：在TaN基板上实现CVD铜薄膜的高附着力的方法
公开(公告)号：US06579793B2
公开(公告)日：2003-06-17
申请号：US09820224
申请日：2001-03-27
申请人： Wei-Wei Zhuang , Wei Pan , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Wei Pan , David R. Evans , Sheng Teng Hsu
IPC分类号： C23C1618
CPC分类号： C23C16/18 , C23C16/56 , H01L21/28556
摘要： A fabrication process provides for achieving high adhesion of CVD copper thin films on metal nitride substrates, and in particular, on substrates having an outermost TaN layer. The method comprises introducing a certain amount of water vapor to the initial copper thin film deposition stage and reducing the amount of fluorine in the interface of the copper and metal nitride substrate. These two process steps result in a copper thin film having improved adhesion to metal nitride substrates, including TaN substrates.
摘要翻译：制造工艺提供了在金属氮化物衬底上，特别是在具有最外层TaN层的衬底上实现CVD铜薄膜的高附着性。该方法包括将一定量的水蒸汽引入初始铜薄膜沉积阶段并减少铜和金属氮化物衬底的界面中的氟的量。这两个工艺步骤导致具有改善的与金属氮化物衬底（包括TaN衬底）的粘附性的铜薄膜。

9. 发明授权

US06509268B1 Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics 失效
标题翻译：铜MOCVD早期的热致密化，用于沉积具有良好附着力和沟槽填充特性的高品质Cu膜
公开(公告)号：US06509268B1
公开(公告)日：2003-01-21
申请号：US09940739
申请日：2001-08-27
申请人： Wei Pan , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L2144
CPC分类号： H01L21/28556 , H01L21/76877
摘要： A method of forming a copper thin film on an integrated circuit substrate having a nitride component includes preparing the substrate; treating the substrate prior to copper deposition; depositing copper during a very short duration copper deposition step lasting between about ten seconds to 40 seconds; baking the substrate and the deposited copper for between about one minute to ten minutes at a temperature greater than 385° C.; and depositing copper during a long duration copper deposition step to deposit copper to the required thickness.
摘要翻译：在具有氮化物成分的集成电路基板上形成铜薄膜的方法包括：准备所述基板; 在铜沉积之前处理衬底; 在持续约十秒至40秒的非常短的铜沉积步骤期间沉积铜; 在大于385℃的温度下烘烤基材和沉积的铜约1分钟至10分钟; 以及在长时间铜沉积步骤中沉积铜以将铜沉积到所需厚度。

10. 发明授权

US08264081B2 Multilayered barrier metal thin-films 有权
标题翻译：多层阻隔金属薄膜
公开(公告)号：US08264081B2
公开(公告)日：2012-09-11
申请号：US11311546
申请日：2005-12-19
申请人： Wei Pan , Yoshi Ono , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , Yoshi Ono , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/28562 , H01L21/76841 , H01L2221/1078
摘要： A multi-layered barrier metal thin film is deposited on a substrate by atomic layer chemical vapor deposition (ALCVD). The multi-layer film may comprise several different layers of a single chemical species, or several layers each of distinct or alternating chemical species. In a preferred embodiment, the multi-layer barrier thin film comprises a Tantalum Nitride layer on a substrate, with a Titanium Nitride layer deposited thereon. The thickness of the entire multi-layer film may be approximately fifty Angstroms. The film has superior film characteristics, such as anti-diffusion capability, low resistivity, high density, and step coverage, when compared to films deposited by conventional chemical vapor deposition (CVD). The multi-layered barrier metal thin film of the present invention has improved adhesion characteristics and is particularly suited for metallization of a Copper film thereon.
摘要翻译：通过原子层化学气相沉积（ALCVD）将多层阻挡金属薄膜沉积在衬底上。多层膜可以包括单个化学物质的几个不同层，或者各个不同的或交替的化学物质的几个层。在优选实施例中，多层阻挡薄膜包括在衬底上的氮化钽层，其上沉积有氮化钛层。整个多层膜的厚度可以是大约50埃。当与通过常规化学气相沉积（CVD）沉积的膜相比时，该膜具有优异的膜特性，例如抗扩散能力，低电阻率，高密度和台阶覆盖。本发明的多层阻挡金属薄膜具有改善的粘合特性，特别适用于其上的铜膜的金属化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式