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1. 发明申请

US20120073635A1 Tandem Dye-Sensitized Solar Cell and Method for Making Same 审中-公开
标题翻译：串联染料敏化太阳能电池及其制造方法
公开(公告)号：US20120073635A1
公开(公告)日：2012-03-29
申请号：US12892779
申请日：2010-09-28
申请人： Jong-Jan Lee , David R. Evans , Karen Yuri Nishimura , Sean Andrew Vail , Wei Pan
发明人： Jong-Jan Lee , David R. Evans , Karen Yuri Nishimura , Sean Andrew Vail , Wei Pan
IPC分类号： H01L51/46 , H01L31/18 , H01L31/0256
CPC分类号： H01G9/2072 , H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A method is provided for forming a tandem dye-sensitized solar cell (DSC) using a bonding process. The method forms a first photovoltaic (PV) cell including a cathode, a first dye, and an anode. A second PV cell is also formed including a cathode, a second dye, and an anode. The second PV cell anode is bonded to the first PV cell cathode, at a temperature of less than 100 degrees C., using a transparent conductive adhesive. In response to the bonding, an internal series electrical connection is formed between the first PV cell and the second PV cell. In one aspect, the second PV cell is formed from a first titanium oxide (TiO2) nanotube (TNT) layer anode.
摘要翻译：提供了使用接合工艺形成串联染料敏化太阳能电池（DSC）的方法。该方法形成包括阴极，第一染料和阳极的第一光伏（PV）电池。还形成第二PV电池，包括阴极，第二染料和阳极。使用透明导电粘合剂，第二PV电池阳极在小于100摄氏度的温度下结合到第一PV电池阴极。响应于接合，在第一PV电池和第二PV电池之间形成内部串联电连接。一方面，第二PV电池由第一氧化钛（TiO 2）纳米管（TNT）层阳极形成。

2. 发明授权

US09082700B2 Ultraviolet treatment of metal oxide electrodes 有权
标题翻译：金属氧化物电极的紫外线处理
公开(公告)号：US09082700B2
公开(公告)日：2015-07-14
申请号：US13296191
申请日：2011-11-14
申请人： Sean Andrew Vail , David R. Evans , Wei Pan , Jong-Jan Lee
发明人： Sean Andrew Vail , David R. Evans , Wei Pan , Jong-Jan Lee
IPC分类号： H01L21/44 , H01L21/268 , H01G9/20 , H01L21/02 , H01L29/786
CPC分类号： H01L21/2686 , H01G9/2031 , H01G9/2059 , H01L21/02554 , H01L29/7869 , Y02E10/542
摘要： An ultraviolet treatment method is provided for a metal oxide electrode. A metal oxide electrode is exposed to an ultraviolet (UV) light source in a humid environment. The metal oxide electrode is then treated with a moiety having at least one anchor group, where the anchor group is a chemical group capable of promoting communication between the moiety and the metal oxide electrode. As a result, the moiety is bound to the metal oxide electrode. In one aspect the metal oxide electrode is treated with a photoactive moiety. Exposing the metal oxide electrode to the UV light source in the humid environment induces surface defects in the metal oxide electrode in the form of oxygen vacancies. In response to the humidity, atmospheric water competes favorably with oxygen for dissociative adsorption on the metal oxide electrode surface, and hydroxylation of the metal oxide electrode surface is induced.
摘要翻译：为金属氧化物电极提供紫外线处理方法。金属氧化物电极在潮湿环境中暴露于紫外（UV）光源。然后用具有至少一个锚定基团的部分处理金属氧化物电极，其中锚定基团是能够促进部分和金属氧化物电极之间的连通的化学基团。结果，该部分与金属氧化物电极结合。在一个方面，用光活性部分处理金属氧化物电极。在潮湿环境中将金属氧化物电极暴露于UV光源以氧空位的形式引起金属氧化物电极中的表面缺陷。响应于湿度，大气水与氧反应，在金属氧化物电极表面上进行离解吸附，诱导金属氧化物电极表面的羟基化。

3. 发明申请

US20120302743A1 Long Wavelength Absorbing Porphyrin Photosensitizers for Dye-Sensitized Solar Cells 有权
标题翻译：用于染料敏化太阳能电池的长波长吸收卟啉光敏剂
公开(公告)号：US20120302743A1
公开(公告)日：2012-11-29
申请号：US13117529
申请日：2011-05-27
申请人： Sean Andrew Vail , David R. Evans , Wei Pan
发明人： Sean Andrew Vail , David R. Evans , Wei Pan
IPC分类号： C07D487/22
CPC分类号： C07D487/22 , Y02E10/542
摘要： A long wavelength absorbing porphyrin/metalloporphyrin molecule is provided, made up of a porphyrin macrocycle and an anchor group for attachment to a substrate. A molecular linking element is interposed between the porphyrin macrocycle and the anchor group. The porphyrin/metalloporphyrin molecule also includes an (aminophenyl)amine group, either N,N-(4-aminophenyl)amine or N-phenyl-N-(4-aminophenyl)amine, where an amino moiety of the 4-aminophenyl group is derivatized by an element such as hydrogen, haloalkanes, aromatic hydrocarbons, halogenated aromatic hydrocarbons, heteroarenes, halogenated heteroarenes, or combinations of the above-mentioned elements.
摘要翻译：提供长波长吸收卟啉/金属卟啉分子，其由卟啉大环化合物和锚定基团组成，用于附着于基底。分子连接元件介于卟啉大环和锚基之间。卟啉/金属卟啉分子还包括（氨基苯基）胺基团，N，N-（4-氨基苯基）胺或N-苯基-N-（4-氨基苯基）胺，其中4-氨基苯基的氨基部分为由诸如氢，卤代烷烃，芳族烃，卤代芳烃，杂芳烃，卤代杂芳烃或上述元素的组合的元素衍生。

4. 发明授权

US08907081B2 Long wavelength absorbing porphyrin photosensitizers for dye-sensitized solar cells 有权
标题翻译：用于染料敏化太阳能电池的长波长吸收卟啉光敏剂
公开(公告)号：US08907081B2
公开(公告)日：2014-12-09
申请号：US13117529
申请日：2011-05-27
申请人： Sean Andrew Vail , David R. Evans , Wei Pan
发明人： Sean Andrew Vail , David R. Evans , Wei Pan
IPC分类号： C07D487/22
CPC分类号： C07D487/22 , Y02E10/542
摘要： A long wavelength absorbing porphyrin/metalloporphyrin molecule is provided, made up of a porphyrin macrocycle and an anchor group for attachment to a substrate. A molecular linking element is interposed between the porphyrin macrocycle and the anchor group. The porphyrin/metalloporphyrin molecule also includes an (aminophenyl)amine group, either N,N-(4-aminophenyl)amine or N-phenyl-N-(4-aminophenyl)amine, where an amino moiety of the 4-aminophenyl group is derivatized by an element such as hydrogen, haloalkanes, aromatic hydrocarbons, halogenated aromatic hydrocarbons, heteroarenes, halogenated heteroarenes, or combinations of the above-mentioned elements.
摘要翻译：提供长波长吸收卟啉/金属卟啉分子，其由卟啉大环化合物和锚定基团组成，用于附着于基底。分子连接元件介于卟啉大环和锚基之间。卟啉/金属卟啉分子还包括（氨基苯基）胺基团，N，N-（4-氨基苯基）胺或N-苯基-N-（4-氨基苯基）胺，其中4-氨基苯基的氨基部分为由诸如氢，卤代烷烃，芳族烃，卤代芳烃，杂芳烃，卤代杂芳烃或上述元素的组合的元素衍生。

5. 发明授权

US07405098B2 Smooth surface liquid phase epitaxial germanium 有权
标题翻译：光滑表面液相外延锗
公开(公告)号：US07405098B2
公开(公告)日：2008-07-29
申请号：US11339017
申请日：2006-01-25
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , David R. Evans , Allen Burmaster
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , David R. Evans , Allen Burmaster
IPC分类号： H01L21/00 , H01L21/84 , H01L21/331 , H01L21/76 , H01L21/20 , H01L21/36
CPC分类号： C30B19/00 , C30B29/08 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02623 , H01L21/02639 , H01L21/30625 , H01L21/7624 , H01L27/14683 , H01L27/14689 , H01L29/16 , H01L29/78 , H01L31/028 , H01L31/105 , H01L31/1126 , H01L31/1136 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
摘要： A method is provided for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface. The method provides a silicon (Si) wafer, forms a silicon nitride insulator layer overlying the Si wafer, and selectively etches the silicon nitride insulator layer, forming a Si seed access region. Then, the method conformally deposits Ge overlying the silicon nitride insulator layer and Si seed access region, forming a Ge layer with a first surface roughness, and smoothes the Ge layer using a chemical-mechanical polish (CMP) process. Typically, the method encapsulates the Ge layer and anneals the Ge layer to form a LPE Ge layer. A Ge layer is formed with a second surface roughness, less than the first surface roughness. In some aspects, the method forms an active device in the LPE Ge layer.
摘要翻译：提供一种形成具有光滑表面的液相外延（LPE）锗（Ge） - 绝缘体（GOI）薄膜的方法。该方法提供硅（Si）晶片，形成覆盖Si晶片的氮化硅绝缘体层，并且选择性地蚀刻氮化硅绝缘体层，形成Si种子接入区域。然后，该方法共同沉积覆盖氮化硅绝缘体层和Si种子访问区域的Ge，形成具有第一表面粗糙度的Ge层，并且使用化学机械抛光（CMP）工艺平滑Ge层。通常，该方法封装Ge层并退火Ge层以形成LPE Ge层。 Ge层形成有小于第一表面粗糙度的第二表面粗糙度。在某些方面，该方法在LPE Ge层中形成有源器件。

6. 发明授权

US06992025B2 Strained silicon on insulator from film transfer and relaxation by hydrogen implantation 有权
标题翻译：绝缘体上的应变硅通过氢注入从膜转移和弛豫
公开(公告)号：US06992025B2
公开(公告)日：2006-01-31
申请号：US10755615
申请日：2004-01-12
申请人： Jer-shen Maa , Jong-Jan Lee , Douglas J. Tweet , David R. Evans , Allen W. Burmaster , Sheng Teng Hsu
发明人： Jer-shen Maa , Jong-Jan Lee , Douglas J. Tweet , David R. Evans , Allen W. Burmaster , Sheng Teng Hsu
IPC分类号： H01L21/26 , H01L21/42 , H01L21/324
CPC分类号： H01L21/76254
摘要： Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device channel and the limited silicon volume because of the insulator layer. The present invention discloses a SSOI substrate fabrication process comprising various novel approaches. One is the use of a thin relaxed SiGe layer as the strain-induced seed layer to facilitate integration and reduce processing cost. Another is the formation of split implant microcracks deep in the silicon substrate to reduce the number of threading dislocations reaching the strained silicon layer. And lastly is the two step annealing/thinning process for the strained silicon/SiGe multilayer film transfer without blister or flaking formation.
摘要翻译：包含直接设置在绝缘体层上的应变硅层的SSOI（应变绝缘体硅）基板上制造的晶体管由于应变诱导的应变硅器件通道的带隙修改而增加了器件性能，并且由于绝缘体层。本发明公开了一种包含各种新颖方法的SSOI衬底制造工艺。一个是使用薄的松弛SiGe层作为应变诱导的种子层，以促进整合并降低加工成本。另一个是在硅衬底深部形成分裂的植入物微裂纹，以减少到达应变硅层的穿透位错的数量。最后是对应变硅/ SiGe多层膜转移的两步退火/变薄处理，没有起泡或剥落形成。

7. 发明授权

US07390725B2 Strained silicon on insulator from film transfer and relaxation by hydrogen implantation 有权
标题翻译：绝缘体上的应变硅通过氢注入从膜转移和弛豫
公开(公告)号：US07390725B2
公开(公告)日：2008-06-24
申请号：US11284326
申请日：2005-11-21
申请人： Jer-shen Maa , Jong-Jan Lee , Douglas J. Tweet , David R. Evans , Allen W. Burmaster , Sheng Teng Hsu
发明人： Jer-shen Maa , Jong-Jan Lee , Douglas J. Tweet , David R. Evans , Allen W. Burmaster , Sheng Teng Hsu
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/76254
摘要： Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device channel and the limited silicon volume because of the insulator layer. The present invention discloses SSOI substrate fabrication processes comprising various novel approaches. One is the use of a thin relaxed SiGe layer as the strain-induced seed layer to facilitate integration and reduce processing cost. Another is the formation of split implant microcracks deep in the silicon substrate to reduce the number of threading dislocations reaching the strained silicon layer. And lastly is a two step annealing/thinning process for the strained silicon/SiGe multilayer film transfer without blister or flaking formation.
摘要翻译：包含直接设置在绝缘体层上的应变硅层的SSOI（应变绝缘体硅）基板上制造的晶体管由于应变诱导的应变硅器件通道的带隙修改而增加了器件性能，并且由于绝缘体层。本发明公开了包含各种新颖方法的SSOI衬底制造工艺。一个是使用薄的松弛SiGe层作为应变诱导的种子层，以促进整合并降低加工成本。另一个是在硅衬底深部形成分裂的植入物微裂纹，以减少到达应变硅层的穿透位错的数量。最后是对应变硅/ SiGe多层膜转移进行两步退火/变薄处理，无需起泡或剥落形成。

8. 发明授权

US5907762A Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing 失效
标题翻译：使用化学机械抛光制造单晶体铁电存储器单元的方法
公开(公告)号：US5907762A
公开(公告)日：1999-05-25
申请号：US984789
申请日：1997-12-04
申请人： David R. Evans , Sheng Teng Hsu , Jong Jan Lee
发明人： David R. Evans , Sheng Teng Hsu , Jong Jan Lee
IPC分类号： H01L21/318 , H01L21/304 , H01L21/336 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L29/78 , H01L21/00
CPC分类号： H01L29/66477 , H01L29/78391
摘要： A method of constructing a single-transistor ferroelectric memory (FEM) cell includes: preparing a silicon substrate for construction of a FEM gate unit; forming gate, source and drain regions on the silicon substrate; forming a nitride layer over the structure to a predetermined thickness equal to a specified thickness for a bottom electrode of the FEM gate unit; forming a first insulating layer over the structure; chemically-mechanically polishing the first insulating layer such that the top surface thereof is even with the top of the nitride layer; forming the bottom electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that the top surface thereof is even with the top surface of the first insulating layer. Additional layers are formed and polished, depending on the specific final configuration of the FEM cell.
摘要翻译：构成单晶体管铁电存储器（FEM）单元的方法包括：制备用于构造有限元栅极单元的硅衬底; 在硅衬底上形成栅极，源极和漏极区域; 在所述结构上形成等于所述FEM栅极单元的底部电极的指定厚度的预定厚度的氮化物层; 在所述结构上形成第一绝缘层; 化学机械抛光第一绝缘层，使得其顶表面与氮化物层的顶部均匀; 形成有限元电池的底电极; 并对底部电极进行化学机械抛光，使得其顶表面与第一绝缘层的顶表面均匀。根据FEM单元的具体最终配置，形成和抛光附加层。

9. 发明授权

US07361574B1 Single-crystal silicon-on-glass from film transfer 有权
标题翻译：单晶硅玻璃从膜转移
公开(公告)号：US07361574B1
公开(公告)日：2008-04-22
申请号：US11601173
申请日：2006-11-17
申请人： Jer-Shen Maa , David R. Evans , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jer-Shen Maa , David R. Evans , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L21/30 , H01L21/461
CPC分类号： H01L21/76251 , H01L21/84 , Y10S438/926 , Y10S438/933
摘要： A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.
摘要翻译：提供了将单晶硅（Si）膜转印到玻璃基板上的方法。该方法沉积覆盖Si晶片的含锗（Ge）的材料，形成牺牲含Ge膜。形成覆盖牺牲的含Ge膜的单晶Si膜。将Si膜表面粘合到透明基板上，形成键合衬底。将键合衬底浸入Ge蚀刻溶液中以除去将透明衬底与Si晶片分离的牺牲Ge含量膜。结果是具有上覆单晶Si膜的透明衬底。可选地，可以形成通道以分布Ge蚀刻溶液，并促进除去含Ge膜。

10. 发明授权

US07267996B2 Iridium etching for FeRAM applications 失效
标题翻译：用于FeRAM应用的铱蚀刻
公开(公告)号：US07267996B2
公开(公告)日：2007-09-11
申请号：US10923165
申请日：2004-08-20
申请人： Fengyan Zhang , David R. Evans , Wei Pan , Lisa H. Stecker , Jer-Shen Maa
发明人： Fengyan Zhang , David R. Evans , Wei Pan , Lisa H. Stecker , Jer-Shen Maa
IPC分类号： H01L21/467
CPC分类号： H01L21/32136 , H01L21/28291
摘要： A method of etching an iridium layer for use in a ferroelectric device includes preparing a substrate; depositing a barrier layer on the substrate; depositing an iridium layer on the barrier layer; depositing a hard mask layer on the iridium layer; depositing, patterning and developing a photoresist layer on the hard mask; etching the hard mask layer; etching the iridium layer using argon, oxygen and chlorine chemistry in a high-density plasma reactor; and completing the ferroelectric device.
摘要翻译：蚀刻用于铁电体器件的铱层的方法包括：制备衬底; 在衬底上沉积阻挡层; 在阻挡层上沉积铱层; 在铱层上沉积硬掩模层; 在硬掩模上沉积，图案化和显影光致抗蚀剂层; 蚀刻硬掩模层; 在高密度等离子体反应器中使用氩，氧和氯化学蚀刻铱层; 并完成铁电器件。

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