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1. 发明授权

US07288397B2 Nicotianamine aminotransferase and gene therefor 失效
标题翻译：尼古丁胺氨基转移酶及其基因
公开(公告)号：US07288397B2
公开(公告)日：2007-10-30
申请号：US11013391
申请日：2004-12-17
申请人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi
发明人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi
IPC分类号： C12N9/10 , C12N15/82 , C12N1/00 , C12N5/04
CPC分类号： C12N15/8271 , C12N9/1096 , C12N15/8261 , Y02A40/146
摘要： A protein having an amino acid sequence represented by SEQ ID NO: 2 or 4 or an amino acid sequence having said amino acid sequence with a single or plural amino acids deleted, replaced or added, and having the nicotianamine aminotransferase activity, a gene encoding said protein as well as utilization thereof for enhancement of ability of absorbing insoluble iron in soil and for improvement of resistance to iron deficiency are provided.
摘要翻译：具有SEQ ID NO：2或4所示的氨基酸序列的蛋白质或具有缺失，替换或添加的单个或多个氨基酸并具有烟酰胺氨基转移酶活性的具有所述氨基酸序列的氨基酸序列的编码所述提供蛋白质以及其用于增强土壤中不溶性铁吸收能力和提高耐铁缺乏能力的用途。

2. 发明授权

US07259292B1 Methods of producing transgenic gramineae plants having resistance to iron deficiency 失效
标题翻译：生产具有抗铁缺乏症的转基因禾本科植物的方法
公开(公告)号：US07259292B1
公开(公告)日：2007-08-21
申请号：US10019783
申请日：2000-07-04
申请人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi , Naoko Nishizawa
发明人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi , Naoko Nishizawa
IPC分类号： C12N15/09 , C12N15/82 , A01H5/00 , A01H5/10
CPC分类号： C12N15/8271 , C12N9/1096 , C12N15/8243 , C12N15/8261 , Y02A40/146
摘要： A method for producing transgenic gramineae plants having tolerance to iron deficiency by transforming the plants with a barley gene encoding nicotianamine aminotransferase (NAAT) and transgenic gramineae plants are provided. The present invention also provides transgenic gramineae plants having resistance to iron deficiency which can grow in iron deficiency and calcareous alkaline soils.
摘要翻译：提供了通过用编码烟碱胺氨基转移酶（NAAT）和转基因禾本科植物的大麦基因转化植物来产生耐铁缺陷的转基因禾本科植物的方法。本发明还提供具有耐铁缺乏症的转基因禾本科植物，其可在铁缺乏和钙质碱性土壤中生长。

3. 发明授权

US06897300B1 Nicotianamine aminotransferase and gene therefor 失效
标题翻译：尼古丁胺氨基转移酶及其基因
公开(公告)号：US06897300B1
公开(公告)日：2005-05-24
申请号：US09026400
申请日：1998-02-19
申请人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi
发明人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi
IPC分类号： C12N1/21 , C12N9/10 , C12N15/82 , C12N1/00 , C12N5/04 , C12N15/29 , C12N15/52
CPC分类号： C12N15/8271 , C12N9/1096 , C12N15/8261 , Y02A40/146
摘要： A protein having an amino acid sequence represented by SEQ ID NO: 1 or 2 or an amino acid sequence having said amino acid sequence with a single or plural amino acids deleted, replaced or added, and having the nicotianamine aminotransferase activity, a gene encoding said protein as well as utilization thereof for enhancement of ability of absorbing insoluble iron in soil and for improvement of resistance to iron deficiency are provided.
摘要翻译：具有SEQ ID NO：1或2所示的氨基酸序列的氨基酸序列的氨基酸序列或具有缺失，替换或添加的单个或多个氨基酸并具有烟酰胺氨基转移酶活性的所述氨基酸序列的氨基酸序列的编码所述提供蛋白质以及其用于增强土壤中不溶性铁吸收能力和提高耐铁缺乏能力的用途。

4. 发明申请

US20050095689A1 Nicotianamine aminotransferase and gene therefor 失效
标题翻译：尼古丁胺氨基转移酶及其基因
公开(公告)号：US20050095689A1
公开(公告)日：2005-05-05
申请号：US11013391
申请日：2004-12-17
申请人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi
发明人： Satoshi Mori , Hiromi Nakanishi , Michiko Takahashi
IPC分类号： C12N1/21 , C12N9/10 , C12N15/82 , C12P17/12 , C07H21/04
CPC分类号： C12N15/8271 , C12N9/1096 , C12N15/8261 , Y02A40/146
摘要： A protein having an amino acid sequence represented by SEQ ID NO: 2 or 4 or an amino acid sequence having said amino acid sequence with a single or plural amino acids deleted, replaced or added, and having the nicotianamine aminotransferase activity, a gene encoding said protein as well as utilization thereof for enhancement of ability of absorbing insoluble iron in soil and for improvement of resistance to iron deficiency are provided.
摘要翻译：具有SEQ ID NO：2或4所示的氨基酸序列的蛋白质或具有缺失，替换或添加的单个或多个氨基酸并具有烟酰胺氨基转移酶活性的具有所述氨基酸序列的氨基酸序列的编码所述提供蛋白质以及其用于增强土壤中不溶性铁吸收能力和提高耐铁缺乏能力的用途。

5. 发明授权

US07122253B2 Curable resin composition, cured film, and composite product 有权
标题翻译：可固化树脂组合物，固化膜和复合产品
公开(公告)号：US07122253B2
公开(公告)日：2006-10-17
申请号：US10257762
申请日：2001-04-17
申请人： Yoshikazu Yamaguchi , Isao Nishiwaki , Yuichi Eriyama , Takashi Ukachi , Takao Yashiro , Michiko Takahashi
发明人： Yoshikazu Yamaguchi , Isao Nishiwaki , Yuichi Eriyama , Takashi Ukachi , Takao Yashiro , Michiko Takahashi
IPC分类号： C08F30/08
CPC分类号： C08G18/289 , C08F283/12 , C08F290/06 , C08G18/3893 , C08G18/673 , C08L51/085 , C08L51/10 , C09D151/085 , C09D151/10 , Y10T428/1476 , Y10T428/2985 , Y10T428/2991 , Y10T428/2995 , Y10T428/31663 , C08L2666/02
摘要： A curable resin composition comprising (A) reactive particles prepared by bonding (A1) at least one of oxide particles of an element selected from the group consisting of silicon, aluminum, zirconium, titanium, zinc, germanium, indium, tin, antimony, ruthenium, rhenium, silver, nickel, cupper and cerium, and (A2) an organic compound which comprises a polymerizable unsaturated group, (B) a compound having two or more polymerizable unsaturated groups in the molecule, and optionally (C) a terminal reactive polysiloxane compound having at least one polymerizable group, other than organic compound (A2).
摘要翻译：一种可固化树脂组合物，其包含（A）通过将（A1）选自硅，铝，锆，钛，锌，锗，铟，锡，锑，钌中的至少一种元素的氧化物颗粒键合而制备的反应性颗粒铼，银，镍，铜和铈，和（A2）包含可聚合不饱和基团的有机化合物，（B）分子中具有两个或更多个可聚合不饱和基团的化合物，和任选地（C）末端反应性聚硅氧烷除了有机化合物（A2）以外，具有至少一个聚合性基团的化合物。

6. 发明申请

US20060110869A1 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
公开(公告)号：US20060110869A1
公开(公告)日：2006-05-25
申请号：US11203970
申请日：2005-08-16
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 μm. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 μm.

7. 发明授权

US4335389A Liquid droplet ejecting recording head 失效
标题翻译：液滴喷射记录头
公开(公告)号：US4335389A
公开(公告)日：1982-06-15
申请号：US133140
申请日：1980-03-24
申请人： Yoshiaki Shirato , Yasushi Takatori , Toshitami Hara , Yukuo Nishimura , Michiko Takahashi
发明人： Yoshiaki Shirato , Yasushi Takatori , Toshitami Hara , Yukuo Nishimura , Michiko Takahashi
IPC分类号： B41J2/14 , B41J2/16 , G01D15/18
CPC分类号： B41J2/1646 , B41J2/14129 , B41J2/1604 , B41J2/1623 , B41J2/1626 , B41J2/1632 , B41J2/164 , B41J2/1642 , B41J2/1645 , B41J2202/03
摘要： A liquid droplet ejecting recording head comprises liquid ejecting portion including an orifice for ejecting liquid droplets and a heat actuating portion communicated with the orifice, and an electrothermal transducer as a means for generating heat energy, the heat energy acting on the liquid at the heat actuating portion for ejecting liquid droplets, characterized in that the part contacting the liquid of the heat actuating portion is made of a material whose .DELTA.W is not more than one-tenth of 1 mg/cm.sup.2 where .DELTA.W is a decrement weight of the material per unit area in mg/cm.sup.2 at a time "t", when subjected to a weight decreasing test, the "t" being a time at which .DELTA.W(Al) is 1 mg/cm.sup.2 where .DELTA.W(Al) is a decrement weight of an aluminum plate of 99.9% in purity per unit area of the tested surface when subjected to the weight decreasing test.
摘要翻译：液滴喷射记录头包括液体喷射部分，其包括用于喷射液滴的孔口和与孔口连通的热致动部分，以及作为产生热能的装置的电热换能器，在热致动时作用在液体上的热能用于喷射液滴的部分，其特征在于，与热致动部分的液体接触的部分由DELTA W不大于1mg / cm 2的十分之一的材料制成，其中DELTA W是材料的减量重量单位面积，以“t”为单位，当进行减重试验时，“t”为DELTA W（Al）为1mg / cm 2的时间，其中DELTA W（Al）为减量重量的铝板，当进行减重试验时，其测试表面的单位面积纯度为99.9％。

8. 发明授权

US06670638B2 Liquid crystal display element and method of manufacturing the same 有权
标题翻译：液晶显示元件及其制造方法
公开(公告)号：US06670638B2
公开(公告)日：2003-12-30
申请号：US09793972
申请日：2001-02-28
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Hironaru Yamaguchi , Yoshinobu Kimura , Makoto Ohkura , Hironobu Abe , Shigeo Shimomura , Masakazu Saitou , Michiko Takahashi
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Hironaru Yamaguchi , Yoshinobu Kimura , Makoto Ohkura , Hironobu Abe , Shigeo Shimomura , Masakazu Saitou , Michiko Takahashi
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L29/78675
摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.
摘要翻译：公开了适用于液晶显示器的多晶硅膜及其制造方法。在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行激光束照射。结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

9. 发明授权

US06512247B1 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
标题翻译：包括具有大晶粒多晶有源层的TFT的半导体器件，以及使用其的制造方法的半导体器件
公开(公告)号：US06512247B1
公开(公告)日：2003-01-28
申请号：US09919847
申请日：2001-08-02
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L2904
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 &mgr;m. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 &mgr;m.
摘要翻译：显示装置包括具有多个像素的像素区域和设置在用于驱动像素的像素区域的周边的外围电路区域。外围电路区域包括由多晶半导体制造并在其沟道区域中具有第一类半导体晶粒的晶体管，其中第一类半导体晶粒的晶粒尺寸至少为3μm。像素区域包括由多晶半导体制造并在其沟道区域中具有第二类半导体晶粒的晶体管，其中第二类半导体晶粒的晶粒尺寸至少为0.05μm。

10. 发明授权

US06274888B1 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
标题翻译：包括具有大晶粒多晶有源层的TFT的半导体器件，以及使用其的制造方法的半导体器件
公开(公告)号：US06274888B1
公开(公告)日：2001-08-14
申请号：US09479919
申请日：2000-01-10
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L2904
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device has a thin film transistor including an insulating substrate, an island made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region and a drain region spaced from the source region, the source region and the drain region being formed in said island, a gate electrode disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material deposited on the insulating substrate with a crystallization-inducing layer made of the at least one of metals and metallic silicides and having a hole corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material on the first amorphous semiconductor and annealing the second amorphous semiconductor material.
摘要翻译：半导体器件具有薄膜晶体管，其包括绝缘基板，由多晶半导体材料制成并设置在绝缘基板上的岛，由多晶半导体材料制成的导电层和金属和金属硅化物中的至少一个并且围绕该岛源极区域和漏极区域与源极区域间隔开，源极区域和漏极区域形成在所述岛状中，栅极电极设置在岛上，绝缘膜插入在岛状物和栅极电极之间，栅极面对源极区域和漏极区域之间的间隔。形成岛和导电层的多晶半导体材料通过用沉积在绝缘基板上的第一非晶半导体材料用由金属和金属硅化物中的至少一种制成的结晶诱导层进行初始退火而制造，并具有对应于岛，所述结晶诱导层设置在所述非晶半导体材料的表面上的与所述基板侧相对的基板侧和侧面中的至少一个上，然后通过在所述第一非晶半导体上沉积第二非晶半导体材料以及退火所述第二非晶半导体材料。

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