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1. 发明授权

US07297982B2 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
标题翻译：包括具有大晶粒多晶有源层的TFT的半导体器件，以及使用其的制造方法的半导体器件
公开(公告)号：US07297982B2
公开(公告)日：2007-11-20
申请号：US11203970
申请日：2005-08-16
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 μm. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 μm.
摘要翻译：显示装置包括具有多个像素的像素区域和设置在用于驱动像素的像素区域的周边的外围电路区域。外围电路区域包括由多晶半导体制造并在其沟道区域中具有第一类半导体晶粒的晶体管，其中第一类半导体晶粒的晶粒尺寸至少为3μm。像素区域包括由多晶半导体制造并在其沟道区域中具有第二类半导体晶粒的晶体管，其中第二类半导体晶粒的晶粒尺寸至少为0.05μm。

2. 发明授权

US06965122B2 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 失效
标题翻译：包括具有大晶粒多晶有源层的TFT的半导体器件，以及使用其的制造方法的半导体器件
公开(公告)号：US06965122B2
公开(公告)日：2005-11-15
申请号：US10339435
申请日：2003-01-10
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01L31/036
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 μm. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 μm.
摘要翻译：显示装置包括具有多个像素的像素区域和设置在用于驱动像素的像素区域的周边的外围电路区域。外围电路区域包括由多晶半导体制造并在其沟道区域中具有第一类半导体晶粒的晶体管，其中第一类半导体晶粒的晶粒尺寸至少为3μm。像素区域包括由多晶半导体制造并在其沟道区域中具有第二类半导体晶粒的晶体管，其中第二类半导体晶粒的晶粒尺寸至少为0.05μm。

3. 发明授权

US06512247B1 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
标题翻译：包括具有大晶粒多晶有源层的TFT的半导体器件，以及使用其的制造方法的半导体器件
公开(公告)号：US06512247B1
公开(公告)日：2003-01-28
申请号：US09919847
申请日：2001-08-02
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L2904
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 &mgr;m. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 &mgr;m.
摘要翻译：显示装置包括具有多个像素的像素区域和设置在用于驱动像素的像素区域的周边的外围电路区域。外围电路区域包括由多晶半导体制造并在其沟道区域中具有第一类半导体晶粒的晶体管，其中第一类半导体晶粒的晶粒尺寸至少为3μm。像素区域包括由多晶半导体制造并在其沟道区域中具有第二类半导体晶粒的晶体管，其中第二类半导体晶粒的晶粒尺寸至少为0.05μm。

4. 发明授权

US06274888B1 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
标题翻译：包括具有大晶粒多晶有源层的TFT的半导体器件，以及使用其的制造方法的半导体器件
公开(公告)号：US06274888B1
公开(公告)日：2001-08-14
申请号：US09479919
申请日：2000-01-10
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L2904
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device has a thin film transistor including an insulating substrate, an island made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region and a drain region spaced from the source region, the source region and the drain region being formed in said island, a gate electrode disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material deposited on the insulating substrate with a crystallization-inducing layer made of the at least one of metals and metallic silicides and having a hole corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material on the first amorphous semiconductor and annealing the second amorphous semiconductor material.
摘要翻译：半导体器件具有薄膜晶体管，其包括绝缘基板，由多晶半导体材料制成并设置在绝缘基板上的岛，由多晶半导体材料制成的导电层和金属和金属硅化物中的至少一个并且围绕该岛源极区域和漏极区域与源极区域间隔开，源极区域和漏极区域形成在所述岛状中，栅极电极设置在岛上，绝缘膜插入在岛状物和栅极电极之间，栅极面对源极区域和漏极区域之间的间隔。形成岛和导电层的多晶半导体材料通过用沉积在绝缘基板上的第一非晶半导体材料用由金属和金属硅化物中的至少一种制成的结晶诱导层进行初始退火而制造，并具有对应于岛，所述结晶诱导层设置在所述非晶半导体材料的表面上的与所述基板侧相对的基板侧和侧面中的至少一个上，然后通过在所述第一非晶半导体上沉积第二非晶半导体材料以及退火所述第二非晶半导体材料。

5. 发明申请

US20060110869A1 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them 有权
公开(公告)号：US20060110869A1
公开(公告)日：2006-05-25
申请号：US11203970
申请日：2005-08-16
申请人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
发明人： Kenkichi Suzuki , Tetsuya Nagata , Michiko Takahashi , Masakazu Saito , Toshio Ogino , Masanobu Miyano
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02675 , H01L21/02691 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 μm. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 μm.

6. 发明授权

US5598285A Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US5598285A
公开(公告)日：1997-01-28
申请号：US123472
申请日：1993-09-20
申请人： Katsumi Kondo , Hiromu Terao , Hidetoshi Abe , Masuyuki Ohta , Kenkichi Suzuki , Tohru Sasaki , Genshiro Kawachi , Junichi Ohwada
发明人： Katsumi Kondo , Hiromu Terao , Hidetoshi Abe , Masuyuki Ohta , Kenkichi Suzuki , Tohru Sasaki , Genshiro Kawachi , Junichi Ohwada
IPC分类号： G02F1/1343 , G02F1/1362 , G02F1/1368 , G22F1/136 , G02F1/141
CPC分类号： G02F1/134363 , G02F1/136213 , G02F1/1368 , G02F2201/122 , G02F2201/128
摘要： A liquid crystal display device has a plurality of pixel elements, the optical transmissivity of which is varied by suitable electrical signals. The liquid crystal display device has electrodes which apply electric fields to a liquid crystal layer, the electric fields having components in a direction generally parallel to the liquid crystal layer. Each pixel element has at least one pixel electrode which extends in a common direction as a signal electrode and common electrodes which extend over several pixel elements. The common electrodes may be on the same side of the liquid crystal layer as the pixel and signal electrodes, or they may be on opposite sides. Each pixel may have two pixel electrodes with the signal electrode disposed therebetween, and there are then a pair of common electrodes with the pixel electrodes therebetween. The common electrodes may be common to adjacent pixel elements. The pixel electrodes and the common electrodes may be separated by an insulating film.
摘要翻译：液晶显示装置具有多个像素元件，其透光率由适当的电信号变化。液晶显示装置具有向液晶层施加电场的电极，电场在大致平行于液晶层的方向上具有成分。每个像素元件具有至少一个在公共方向上延伸的像素电极，作为信号电极和在多个像素元件上延伸的公共电极。公共电极可以与像素和信号电极在液晶层的相同侧上，或者它们可以在相对的两侧。每个像素可以具有两个像素电极，信号电极位于它们之间，然后是一对公共电极，其间具有像素电极。公共电极对于相邻的像素元件可能是共同的。像素电极和公共电极可以被绝缘膜分离。

7. 发明授权

US5555112A Liquid crystal display device having multilayer gate busline composed of metal oxide and semiconductor 失效
标题翻译：具有由金属氧化物和半导体构成的多层栅极总线的液晶显示装置
公开(公告)号：US5555112A
公开(公告)日：1996-09-10
申请号：US193868
申请日：1994-02-09
申请人： Ryoji Oritsuki , Minoru Hiroshima , Masahiro Yanai , Masaaki Matsuda , Toshikazu Horii , Yuichi Hashimoto , Hayao Kozai , Kenkichi Suzuki , Masaru Takabatake , Takashi Isoda
发明人： Ryoji Oritsuki , Minoru Hiroshima , Masahiro Yanai , Masaaki Matsuda , Toshikazu Horii , Yuichi Hashimoto , Hayao Kozai , Kenkichi Suzuki , Masaru Takabatake , Takashi Isoda
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/78 , H01L29/786 , G02F1/1343 , H01L29/04
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： In a liquid crystal display substrate in which the pixel electrode is applied with a voltage through the drain and source of a thin-film transistor (TFT) that conducts by a voltage applied to the TFT gate electrode, this gate electrode and a busline connected to the gate electrode are formed as a multi-layered structure consisting of a gate layer and at least two layers of a gate insulation film and an amorphous silicon film. The multi-layered structure is formed by etching through a single mask.
摘要翻译：在液晶显示基板中，通过施加于TFT栅电极的电压导通的薄膜晶体管（TFT）的漏极和源极对像素电极施加电压，该栅极电极和连接到栅电极形成为由栅极层和至少两层栅极绝缘膜和非晶硅膜构成的多层结构。多层结构通过单一掩模的蚀刻形成。

8. 发明授权

US5400368A Method and apparatus for adjusting the sampling phase of a digitally encoded signal in a wireless communication system 失效
标题翻译：一种用于在无线通信系统中调整数字编码信号的采样相位的方法和装置
公开(公告)号：US5400368A
公开(公告)日：1995-03-21
申请号：US107451
申请日：1993-08-17
申请人： Jong-Keung Cheng , Nan-Sheng Lin , Mihran Touriguian , Kenkichi Suzuki
发明人： Jong-Keung Cheng , Nan-Sheng Lin , Mihran Touriguian , Kenkichi Suzuki
IPC分类号： G01S11/10 , H04L7/033 , H04L7/04 , H04L7/00
CPC分类号： G01S11/10 , H04L7/0334 , H04L7/042
摘要： In a digital wireless communication system, a first unit transmits a digitally encoded signal to a second unit in a plurality of non-contiguous time slots. Within each time slot, the digitally encoded signal has a synchronization signal portion followed by a data signal portion. The second unit has an antenna to receive the synchronization signal portion of the digitally encoded signal. The second unit also has a clock to generate a clock signal at a first rate having a sampling phase. An analog to digital converter receives the clock signal and the synchronization signal and samples the synchronization signal at the first rate to generate a first plurality of symbols. An interpolator receives the first plurality of symbols and interpolates the first plurality of symbols to generate a second plurality of symbols at a second rate. The second rate is a multiple of the first rate. A match filter receives the second plurality of symbols and compares the second plurality symbol of symbols to a stored plurality of symbols to generate an error signal. The sampling phase of the clock signal is altered in response to the error signal, after to the receipt of the synchronization signal.
摘要翻译：在数字无线通信系统中，第一单元将数字编码信号发送到多个非连续时隙中的第二单元。在每个时隙内，数字编码的信号具有跟随数据信号部分的同步信号部分。第二单元具有用于接收数字编码信号的同步信号部分的天线。第二单元还具有用于以具有采样相位的第一速率产生时钟信号的时钟。模数转换器接收时钟信号和同步信号，并以第一速率采样同步信号，以产生第一多个符号。内插器接收第一多个符号并内插第一多个符号以产生第二个速率的第二个多个符号。第二个利率是第一个利率的倍数。匹配滤波器接收第二多个符号，并将第二多个符号符号与存储的多个符号进行比较，以产生误差信号。在接收到同步信号之后，响应于误差信号改变时钟信号的采样相位。

9. 发明授权

US4437731A Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US4437731A
公开(公告)日：1984-03-20
申请号：US274680
申请日：1981-06-17
申请人： Ryoichi Sudo , Fusaji Shoji , Takeshi Watanabe , Kenkichi Suzuki , Michio Ooue
发明人： Ryoichi Sudo , Fusaji Shoji , Takeshi Watanabe , Kenkichi Suzuki , Michio Ooue
IPC分类号： C09K19/46 , C09K19/56 , C09K19/60 , G02F1/1337 , G02F1/13
CPC分类号： G02F1/133719 , C09K19/46 , C09K19/56 , C09K19/603
摘要： A novel alignment film for liquid crystal is prepared by depositing an organic solvent solution of an alkylalkoxy silane and an alkoxymetallic compound of Ti, Zr, Ge onto an electrode-side surface of substrate, and curing the solution on the substrate by heating.The alignment film shows good alignment for various types of liquid crystals and has long life.
摘要翻译：通过将烷基烷氧基硅烷和Ti，Zr，Ge的烷氧基金属化合物的有机溶剂溶液沉积在基板的电极侧表面上并通过加热固化在基板上来制备用于液晶的新型取向膜。取向膜对于各种液晶呈现良好的取向，寿命长。

10. 发明申请

US20130023090A1 FIBER SOI SUBSTRATE, SEMICONDUCTOR DEVICE USING THIS, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光纤SOI衬底，使用此的半导体器件及其制造方法
公开(公告)号：US20130023090A1
公开(公告)日：2013-01-24
申请号：US13614512
申请日：2012-09-13
申请人： Takashi FUYUKI , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
发明人： Takashi FUYUKI , Kenkichi Suzuki , Sadayuki Toda , Hisashi Koaizawa
IPC分类号： H01L21/20 , H01L21/58
CPC分类号： H01L29/78603 , H01L21/0242 , H01L21/02428 , H01L21/02532 , H01L21/02686 , H01L21/67069 , H01L21/84 , H01L27/016 , H01L27/12
摘要： The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1, and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are arranged at intervals in a width direction are formed on a surface of the fiber 1.
摘要翻译：本发明提供一种可以实现由MOS集成电路和无源器件形成的复合器件的SOI衬底，并且可以减小半导体器件的尺寸和制造成本。提供了一种光纤SOI衬底5，其包括具有多边形截面的光纤1和在光纤1的至少一个表面上成膜之后结晶的半导体薄膜3以及沿线性方向延伸的多个凹槽8 在纤维1的表面上形成宽度方向的间隔。

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