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1. 发明授权

US6004730A Method of forming an insulating film pattern and photosensitive composition 失效
标题翻译：形成绝缘膜图案和光敏组合物的方法
公开(公告)号：US6004730A
公开(公告)日：1999-12-21
申请号：US921613
申请日：1997-09-02
申请人： Satoshi Mikoshiba , Yoshihiko Nakano , Rikako Kani , Shuji Hayase
发明人： Satoshi Mikoshiba , Yoshihiko Nakano , Rikako Kani , Shuji Hayase
IPC分类号： C08G77/48 , C08G77/62 , C08L83/04 , C08L83/16 , G03F7/075 , H01L21/027 , H01L21/312 , G03F7/26
CPC分类号： G03F7/0757
摘要： There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.
摘要翻译：提出了一种形成绝缘膜图案的方法，其能够通过碱性溶液的碱显影容易地获得高精度和低介电常数的绝缘图案。该方法包括以下步骤：将包含具有特定单体的第一硅氧烷聚合物和具有特定单体的第二硅氧烷聚合物的光敏组合物涂布在基材上，从而形成感光组合物的膜，选择性地曝光感光组合物的膜，将曝光的膜显影以形成图案，并对感光性组合物膜的图案进行热处理。

2. 发明授权

US6025117A Method of forming a pattern using polysilane 失效
标题翻译：使用聚硅烷形成图案的方法
公开(公告)号：US6025117A
公开(公告)日：2000-02-15
申请号：US986517
申请日：1997-12-08
申请人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
发明人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
IPC分类号： C08G77/60 , C08G83/00 , G03F7/075 , G03F7/09 , G03F7/00
CPC分类号： C08G83/003 , C08G77/60 , G03F7/0754 , G03F7/091
摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
摘要翻译：具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

3. 发明授权

US5994007A Pattern forming method utilizing first insulative and then conductive overlayer and underlayer 失效
标题翻译：使用第一绝缘导电覆层和底层的图案形成方法
公开(公告)号：US5994007A
公开(公告)日：1999-11-30
申请号：US213373
申请日：1998-12-17
申请人： Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
发明人： Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
IPC分类号： G03F7/09 , G03F7/20 , G03F9/00
CPC分类号： G03F7/203 , G03F7/091 , G03F7/093 , Y10S430/143
摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.
摘要翻译：公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

4. 发明授权

US5985513A Photosensitive composition comprising aryl-substituted polysilane and peroxide-substituted benzophenone 失效
标题翻译：包含芳基取代的聚硅烷和过氧化物取代的二苯甲酮的光敏组合物
公开(公告)号：US5985513A
公开(公告)日：1999-11-16
申请号：US865067
申请日：1997-05-29
申请人： Rikako Kani , Yoshihiko Nakano , Shuji Hayase
发明人： Rikako Kani , Yoshihiko Nakano , Shuji Hayase
IPC分类号： C08K5/14 , G03F7/075 , G03C1/73
CPC分类号： G03F7/0757 , C08K5/14 , G03F7/0754
摘要： The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.
摘要翻译：本发明涉及一种光敏组合物，其包含具有由以下通式（1）表示的重复单元的聚硅烷和具有有机过氧化物的二苯甲酮型化合物，其中Ar表示取代或未取代的芳基。

5. 发明授权

US06270948B1 Method of forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06270948B1
公开(公告)日：2001-08-07
申请号：US09327223
申请日：1999-06-07
申请人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
发明人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
IPC分类号： G03F700
CPC分类号： G03F7/094 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3121
摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案和碘。采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

6. 发明授权

US5362559A Polysilane monomolecular film and polysilane built-up film 失效
标题翻译：聚硅烷单分子膜和聚硅烷成膜
公开(公告)号：US5362559A
公开(公告)日：1994-11-08
申请号：US89634
申请日：1993-07-12
申请人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami , Akira Yoshizumi , Shinji Murai , Rikako Kani
发明人： Shuji Hayase , Yoshihiko Nakano , Yukihiro Mikogami , Akira Yoshizumi , Shinji Murai , Rikako Kani
IPC分类号： B05D1/20 , C09D183/16 , B32B5/00
CPC分类号： B82Y30/00 , B05D1/202 , B82Y40/00 , C09D183/16 , Y10T428/261
摘要： Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique. In the films, the molecules of the polysilane having the repeating unit (1), that is, the Si-Si backbones are oriented in a fixed direction.
摘要翻译：公开了一种聚硅烷单分子膜和聚硅烷叠层膜，其通过构建多个所述单分子膜而形成，所述单分子膜由具有由以下给出的通式（1）表示的重复单元的聚硅烷组成：＆lt; IMAGE＆gt;（1 ）其中，R1表示取代或未取代的碳原子数1〜24的烷基或碳原子数6〜24的取代或未取代的芳基，R2表示可被取代的碳原子数1〜4的二价烃基，X 表示羟基，氨基，羧基或具有选自羟基，氨基，羧基，酰胺键，酯键，氨基甲酸酯键和碳酸酯键中的至少一种的亲水基团。可以通过LB技术在基板上形成聚硅烷单分子膜和积层膜。在膜中，具有重复单元（1）的聚硅烷的分子，即Si-Si主链在固定方向上取向。

7. 发明授权

US6022814A Material of forming silicon oxide film, silicon oxide film, method of forming silicon oxide film and semiconductor element 失效
标题翻译：形成氧化硅膜的材料，氧化硅膜，形成氧化硅膜和半导体元件的方法
公开(公告)号：US6022814A
公开(公告)日：2000-02-08
申请号：US22493
申请日：1998-02-12
申请人： Satoshi Mikoshiba , Yoshihiko Nakano , Shuji Hayase
发明人： Satoshi Mikoshiba , Yoshihiko Nakano , Shuji Hayase
IPC分类号： C01B33/12 , C08G77/04 , C08G77/38 , C08G77/58 , H01L21/312 , H01L21/316 , H01L21/44
CPC分类号： C08G77/38 , H01L21/316 , H01L21/3122
摘要： A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); ##STR1## wherein R.sup.1 is a substituent group which can be eliminated at a temperature ranging from 250.degree. C. to the glass transition point of the material of forming silicon oxide film; and R.sup.2 is a substituent group which cannot be eliminated at a temperature of 250.degree. C. or more.
摘要翻译：一种形成氧化硅膜的材料，包括具有由以下通式（1A），（1B）或（1C）表示的重复单元的聚合物; 其中R1是可在250℃至形成氧化硅膜的材料的玻璃化转变点的温度范围内去除的取代基; R2是在250℃以上的温度下不能除去的取代基。

8. 发明授权

US5907008A Black coloring composition, high heat resistance light-shielding component, array substrate, liquid crystal and method of manufacturing array substrate 失效
标题翻译：黑色着色组合物，高耐热性遮光成分，阵列基板，液晶及阵列基板的制造方法
公开(公告)号：US5907008A
公开(公告)日：1999-05-25
申请号：US818877
申请日：1997-03-17
申请人： Yoshihiko Nakano , Shuji Hayase , Sawako Fujioka , Takeo Ito , Satoshi Mikoshiba , Hideo Hirayama
发明人： Yoshihiko Nakano , Shuji Hayase , Sawako Fujioka , Takeo Ito , Satoshi Mikoshiba , Hideo Hirayama
IPC分类号： C08K3/22 , C08K3/00
CPC分类号： C08K3/22
摘要： A black coloring composition comprising, a black inorganic pigment formed of an oxide having an average particle diameter of 0.5 .mu.m or less and comprising at least one kind of metal s elected from metals belonging to Groups 4 to 11 and also to the fourth period, at least one kinds of dispersant selected from the group consisting of polyvinyl butyral resin represented by the following general formula (1), polyacrylic resin represented by the following general formula (2), and a higher carboxylic acid represented by the following general formula (3), and an organic solvent: ##STR1## wherein x=0.01 to 0.9, y.ltoreq.0.05, and n is an integer; ##STR2## wherein R.sup.1 is selected from hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, R.sup.2 is selected from a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, R.sup.3 is selected from hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, a=0 to 0.9, and n is an integer;R.sup.4 COOH (3)wherein R.sup.4 is a substituted or unsubstituted aliphatic hydrocarbon group having 12 or more carbon atoms.
摘要翻译：黑色着色组合物，其特征在于，含有由平均粒径为0.5μm以下的氧化物形成的黑色无机颜料，所述黑色无机颜料含有选自属于第4〜11族，第4周期的金属中的至少1种金属，选自由以下通式（1）表示的聚乙烯醇缩丁醛树脂，由以下通式（2）表示的聚丙烯酸树脂和由以下通式（3）表示的高级羧酸的至少一种分散剂：）和有机溶剂：其中x = 0.01〜0.9，y <0.05，n为整数; 其中R1选自氢原子，取代或未取代的脂族烃基和取代或未取代的芳族烃基，R2选自取代或未取代的脂族烃基和取代或未取代的芳族烃基，R3选自氢原子取代或未取代的脂族烃基和取代或未取代的芳香族烃基，a = 0〜0.9，n为整数。 R4COOH（3）其中R4是具有12个或更多个碳原子的取代或未取代的脂族烃基。

9. 发明授权

US07126054B2 Raw material kit for electrolytic composition, electrolytic composition, and dye-sensitized solar cell 有权
标题翻译：电解组合物原料试剂盒，电解组合物和染料敏化太阳能电池
公开(公告)号：US07126054B2
公开(公告)日：2006-10-24
申请号：US10180018
申请日：2002-06-27
申请人： Shinji Murai , Hiroyasu Sumino , Satoshi Mikoshiba , Shuji Hayase
发明人： Shinji Murai , Hiroyasu Sumino , Satoshi Mikoshiba , Shuji Hayase
IPC分类号： H01L31/04
CPC分类号： H01G9/2031 , H01G9/2009 , Y02E10/542
摘要： Disclosed is a dye-sensitized solar cell comprising a gel electrolyte that contains a gelling agent and an electrolyte, wherein the gelling agent contains at least one kind of a polymer selected from the group consisting of a first polymer in which polysulfonic acid is crosslinked by a metal ion having a valency of not less than two, a second polymer in which polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two, a third polymer in which a quaternary ammonium salt of polysulfonic acid is crosslinked by a metal ion having a valency of not less than two and a fourth polymer in which a quaternary ammonium salt of polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two.
摘要翻译：公开了一种染料敏化太阳能电池，其包含凝胶电解质，其含有胶凝剂和电解质，其中，所述胶凝剂含有选自第一聚合物中的至少一种的聚合物，其中聚磺酸通过化合价不低于2的金属离子，多元羧酸通过不少于2价的金属离子交联的第二聚合物，其中多磺酸的季铵盐通过金属交联的第三种聚合物具有不小于2的化合价的离子和其中多元羧酸的季铵盐通过不少于2的化合价的金属离子交联的第四聚合物。

10. 发明授权

US07812252B2 Dye sensitized solar cell and method for manufacturing dye sensitized solar cell 有权
标题翻译：染料敏化太阳能电池和染料敏化太阳能电池的制造方法
公开(公告)号：US07812252B2
公开(公告)日：2010-10-12
申请号：US11671227
申请日：2007-02-05
申请人： Shinji Murai , Satoshi Mikoshiba , Hiroyasu Sumino , Shuji Hayase
发明人： Shinji Murai , Satoshi Mikoshiba , Hiroyasu Sumino , Shuji Hayase
IPC分类号： H01L31/00
CPC分类号： H01G9/2009 , H01G9/2031 , Y02E10/542 , Y02P70/521
摘要： The present invention provides a dye sensitized solar cell comprising an n-type semiconductor electrode containing a dye, an opposed electrode, and a gel electrolyte arranged between the n-type semiconductor and the opposed electrode and containing a gelling agent and an electrolyte that contains iodine, wherein the gelling agent contains a compound including an N-containing group and at least one atomic group selected from a group consisting of a sulfonic group and a carboxylic group.
摘要翻译：本发明提供了一种染料敏化太阳能电池，其包含n型半导体电极，其含有染料，相对电极和布置在n型半导体和相对电极之间的凝胶电解质，并含有胶凝剂和含有碘的电解质其中，所述胶凝剂含有包含含氮基团和至少一个选自磺酸基和羧基的原子团的化合物。

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