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1. 发明授权

US5907008A Black coloring composition, high heat resistance light-shielding component, array substrate, liquid crystal and method of manufacturing array substrate 失效
标题翻译：黑色着色组合物，高耐热性遮光成分，阵列基板，液晶及阵列基板的制造方法
公开(公告)号：US5907008A
公开(公告)日：1999-05-25
申请号：US818877
申请日：1997-03-17
申请人： Yoshihiko Nakano , Shuji Hayase , Sawako Fujioka , Takeo Ito , Satoshi Mikoshiba , Hideo Hirayama
发明人： Yoshihiko Nakano , Shuji Hayase , Sawako Fujioka , Takeo Ito , Satoshi Mikoshiba , Hideo Hirayama
IPC分类号： C08K3/22 , C08K3/00
CPC分类号： C08K3/22
摘要： A black coloring composition comprising, a black inorganic pigment formed of an oxide having an average particle diameter of 0.5 .mu.m or less and comprising at least one kind of metal s elected from metals belonging to Groups 4 to 11 and also to the fourth period, at least one kinds of dispersant selected from the group consisting of polyvinyl butyral resin represented by the following general formula (1), polyacrylic resin represented by the following general formula (2), and a higher carboxylic acid represented by the following general formula (3), and an organic solvent: ##STR1## wherein x=0.01 to 0.9, y.ltoreq.0.05, and n is an integer; ##STR2## wherein R.sup.1 is selected from hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, R.sup.2 is selected from a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, R.sup.3 is selected from hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group and a substituted or unsubstituted aromatic hydrocarbon group, a=0 to 0.9, and n is an integer;R.sup.4 COOH (3)wherein R.sup.4 is a substituted or unsubstituted aliphatic hydrocarbon group having 12 or more carbon atoms.
摘要翻译：黑色着色组合物，其特征在于，含有由平均粒径为0.5μm以下的氧化物形成的黑色无机颜料，所述黑色无机颜料含有选自属于第4〜11族，第4周期的金属中的至少1种金属，选自由以下通式（1）表示的聚乙烯醇缩丁醛树脂，由以下通式（2）表示的聚丙烯酸树脂和由以下通式（3）表示的高级羧酸的至少一种分散剂：）和有机溶剂：其中x = 0.01〜0.9，y <0.05，n为整数; 其中R1选自氢原子，取代或未取代的脂族烃基和取代或未取代的芳族烃基，R2选自取代或未取代的脂族烃基和取代或未取代的芳族烃基，R3选自氢原子取代或未取代的脂族烃基和取代或未取代的芳香族烃基，a = 0〜0.9，n为整数。 R4COOH（3）其中R4是具有12个或更多个碳原子的取代或未取代的脂族烃基。

2. 发明授权

US5682041A Electronic part incorporating artificial super lattice 失效
标题翻译：电子部件采用人造超晶格
公开(公告)号：US5682041A
公开(公告)日：1997-10-28
申请号：US651661
申请日：1996-05-21
申请人： Takashi Kawakubo , Hideo Hirayama , Kenya Sano , Michihiro Oose , Junsei Tsutsumi
发明人： Takashi Kawakubo , Hideo Hirayama , Kenya Sano , Michihiro Oose , Junsei Tsutsumi
IPC分类号： H01L29/15 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66 , H01L29/737 , H01L29/76 , H01L29/88 , H01L45/00 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y10/00 , H01L29/155 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66977 , H01L29/7376 , H01L29/7606 , H01L29/882 , H01L45/00
摘要： An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect. The artificial super lattice possesses a barrier layer formed of an insulating substance and an electrode layer formed of a substance of good conductivity and disposed in contact with the barrier layers.
摘要翻译：公开了一种电子部件，其具有通过将选自属于3A〜6A族的过渡元素的元素和稀土元素之间的化合物形成的具有良好导电性的物质交替重叠的人造超晶格和选自硼，碳，氮，磷，硒和碲中的元素，或选自7A和8族的元素的氧和过渡金属元素之间的化合物，以及由简单金属选自属于组1A，组2A和组1B至4B的元素和选自碳，氮，氧，磷，硫，硒，碲和卤素元素的元素，其厚度适合于获得量子尺寸影响。人造超晶格具有由绝缘物质形成的阻挡层和由导电性良好的物质形成并与阻挡层接触的电极层。

3. 发明授权

US6037195A Process of producing thin film transistor 失效
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US6037195A
公开(公告)日：2000-03-14
申请号：US154446
申请日：1998-09-16
申请人： Shigetaka Toriyama , Hideo Hirayama
发明人： Shigetaka Toriyama , Hideo Hirayama
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/00
CPC分类号： H01L29/66757 , H01L27/1214 , H01L29/78621 , Y10S148/053
摘要： A process of producing a thin film transistor of a liquid crystal display device according to the present invention comprises the steps of forming a semiconductor layer on an insulation substrate, stacking an insulation film and a conductive layer on the semiconductor layer, patterning the conductive layer to form a gate electrode, reducing a width of a mask used at formation of the gate electrode in a prescribed amount to form an offset region, implanting highly concentrated impurity ions into a part of the semiconductor layer where there are not the mask or the conductive layer to form an N.sup.+ -polysilicon layer, re-etching the conductive layer by using the mask used at formation of the gate electrode made narrower by the offset region, and implanting low concentrated impurity ions into the semiconductor layer below the conductor region removed by re-etching to form an N.sup.- -polysilicon layer.
摘要翻译：根据本发明的液晶显示装置的薄膜晶体管的制造方法包括以下步骤：在绝缘基板上形成半导体层，在半导体层上堆叠绝缘膜和导电层，将导电层图案化为形成栅极电极，减少形成栅电极的掩模的宽度，以形成偏移区域，将高度浓缩的杂质离子注入到不存在掩模或导电层的半导体层的一部分中为了形成N + - 多晶硅层，通过使用通过偏移区域变窄的形成栅电极的掩模来重新蚀刻导电层，并且将低浓度杂质离子注入到通过重新除去的导体区域下方的半导体层中，蚀刻以形成N - 多晶硅层。

4. 发明授权

US5686980A Light-shielding film, useable in an LCD, in which fine particles of a metal or semi-metal are dispersed in and throughout an inorganic insulating film 失效
标题翻译：可用于LCD的遮光膜，其中金属或半金属的细颗粒分散在整个无机绝缘膜中
公开(公告)号：US5686980A
公开(公告)日：1997-11-11
申请号：US479463
申请日：1995-06-07
申请人： Hideo Hirayama , Nobuki Ibaraki , Koji Hidaka , Kiyotsugu Mizouchi , Michiya Kobayashi , Takashi Ishigami , Ryo Sakai , Makoto Kikuchi
发明人： Hideo Hirayama , Nobuki Ibaraki , Koji Hidaka , Kiyotsugu Mizouchi , Michiya Kobayashi , Takashi Ishigami , Ryo Sakai , Makoto Kikuchi
IPC分类号： G02B5/00 , G02F1/1335 , H01L31/0216 , G02F1/1333 , H01L31/062 , H01L31/113 , H01L31/232
CPC分类号： H01L31/02164 , G02F1/133512
摘要： A light-shielding film, and a liquid crystal display device including the light-shielding film, and a material suitable for forming the light-shielding film. The light-shielding film includes at least a film prepared from an inorganic insulating material and fine particles of metal and/or semi-metal dispersed in the insulating material film. The liquid crystal display device includes a display pixel electrode array substrate, a counter substrate, and a liquid crystal layer interposed between the two substrates. The light-shielding film is formed on the display pixel electrode array substrate of the liquid crystal display device.
摘要翻译：遮光膜以及包括该遮光膜的液晶显示装置和适于形成该遮光膜的材料。遮光膜至少包括由无机绝缘材料制成的膜和分散在绝缘材料膜中的金属和/或半金属微粒。液晶显示装置包括显示像素电极阵列基板，对置基板和插入在两个基板之间的液晶层。遮光膜形成在液晶显示装置的显示像素电极阵列基板上。

5. 发明授权

US06670641B1 Thin film transistor, method of manufacturing the same and thin film transistor liquid crystal display device 失效
标题翻译：薄膜晶体管，制造方法及薄膜晶体管液晶显示装置
公开(公告)号：US06670641B1
公开(公告)日：2003-12-30
申请号：US09574067
申请日：2000-05-18
申请人： Kaichi Fukuda , Tsutomu Uemoto , Hideo Hirayama , Shinichi Kawamura , Shigetaka Toriyama
发明人： Kaichi Fukuda , Tsutomu Uemoto , Hideo Hirayama , Shinichi Kawamura , Shigetaka Toriyama
IPC分类号： H01L2976
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78627
摘要： A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.
摘要翻译：薄膜晶体管（TFT）设置有在绝缘体（例如玻璃板）的基板上形成的精确地，轻掺杂的漏极（LDD）结构。公开了制造TFT的方法和具有该TFT的液晶显示装置。具有LDD结构的TFT包括侧壁和栅极绝缘层。在侧壁和栅极绝缘层之间设置中间层。中间层与侧壁的层性质不同。当通过各向异性蚀刻工艺形成侧壁时，可以在中间层的表面上停止蚀刻。结果，保护栅极绝缘层和衬底免受蚀刻。

6. 发明授权

US6096585A Method of manufacturing thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US6096585A
公开(公告)日：2000-08-01
申请号：US980797
申请日：1997-12-01
申请人： Kaichi Fukuda , Tsutomu Uemoto , Hideo Hirayama , Shinichi Kawamura , Shigetaka Toriyama
发明人： Kaichi Fukuda , Tsutomu Uemoto , Hideo Hirayama , Shinichi Kawamura , Shigetaka Toriyama
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78627 , G02F1/13454
摘要： A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.
摘要翻译：薄膜晶体管（TFT）设置有在绝缘体（例如玻璃板）的基板上形成的精确地，轻掺杂的漏极（LDD）结构。公开了制造TFT的方法和具有该TFT的液晶显示装置。具有LDD结构的TFT包括侧壁和栅极绝缘层。在侧壁和栅极绝缘层之间设置中间层。中间层与侧壁的层性质不同。当通过各向异性蚀刻工艺形成侧壁时，可以在中间层的表面上停止蚀刻。结果，保护栅极绝缘层和衬底免受蚀刻。

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